JPH01270933A - Device for treatment under reduced pressure - Google Patents

Device for treatment under reduced pressure

Info

Publication number
JPH01270933A
JPH01270933A JP10035988A JP10035988A JPH01270933A JP H01270933 A JPH01270933 A JP H01270933A JP 10035988 A JP10035988 A JP 10035988A JP 10035988 A JP10035988 A JP 10035988A JP H01270933 A JPH01270933 A JP H01270933A
Authority
JP
Japan
Prior art keywords
pressure
dust concentration
atmospheric pressure
under reduced
reduced pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10035988A
Other languages
Japanese (ja)
Inventor
Yoichi Ito
陽一 伊藤
Yutaka Kakehi
掛樋 豊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10035988A priority Critical patent/JPH01270933A/en
Publication of JPH01270933A publication Critical patent/JPH01270933A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/006Processes utilising sub-atmospheric pressure; Apparatus therefor

Abstract

PURPOSE:To make it possible to easily detect the completion of cleaning and reduce the time required therefore by providing a means to exhaust air under reduced pressure from the inside of a device, a means to restore atmospheric pressure therein, and a means to measure dust concentration in the device wherein the pressure has been restored to atmospheric pressure. CONSTITUTION:In a device 1 to treat samples under reduced pressure, the pressure therein is reduced by exhausting air therefrom by means of a means 11 and also restored to atmospheric pressure by means of a means 10. And further, the dust concentration in the device 1, the inside pressure of which has been restored to atmospheric pressure, is measured by means of a dust concentration measurement equipment 17. As a result, completion of cleaning of the inside of the device 1 can be easily detected and time required therefor can be made shorter.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、減圧処理装置に係1ノ、特に装置内をパージ
アンドフローによりクリーニングされる減圧処理装置に
関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a reduced pressure processing apparatus, and more particularly to a reduced pressure processing apparatus in which the inside of the apparatus is cleaned by purge and flow.

〔従来の技術〕[Conventional technology]

ドライエプチング装置等のプラズマ処理装置は一般にプ
ラズマ処理室、搬送のためのバッフ1室およびロードロ
ック室で構成されるが、プラズマ処理室ではエブチング
された粒子やデボジシ冒ン成分を有するためチャンバ内
はこれらの塵埃で汚染され、真空室として連通ずるバブ
ファ室やロードロック室も搬送を通じて汚染される。こ
のような処理室や真空室のクリーニング技術として1例
えば、特開昭60−91641号公報に記載のように排
気系とリーク系を設け、これを交互に動作してクリーニ
ングする技術が提案されている。
Plasma processing equipment such as dry etching equipment generally consists of a plasma processing chamber, a buffer chamber for transportation, and a load lock chamber, but the plasma processing chamber contains ebbed particles and deposited effluent components, so the inside of the chamber is are contaminated with these dusts, and the bubble chamber and load lock chamber, which communicate as a vacuum chamber, are also contaminated during transportation. As a cleaning technique for such processing chambers and vacuum chambers, for example, a technique has been proposed in which an exhaust system and a leak system are provided and the systems are operated alternately for cleaning, as described in Japanese Patent Laid-Open No. 60-91641. There is.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上記従来技術では、クリーニングの終了を確認するため
には搬送後の試料に付着した異物数を面板欠陥装置によ
り測定し、目標値を達成するまで繰り返し行う必要があ
る。よって、クリーニングに要する時間も多大になると
いう問題点があった。
In the above-mentioned conventional technology, in order to confirm the completion of cleaning, it is necessary to measure the number of foreign substances attached to the sample after being transported using a face plate defect device, and repeat the measurement until the target value is achieved. Therefore, there is a problem in that the time required for cleaning becomes large.

本発明の目的は、クリーニングの終了を容易に検出し、
それに要する時間な足輪できる減圧処理装置を提供する
ことにある。
The purpose of the present invention is to easily detect the end of cleaning;
The object of the present invention is to provide a decompression processing device that can reduce the time required for the processing.

〔課題を解決するための手段〕[Means to solve the problem]

上記目的は、減圧処理装置を、装置内を減圧排気する手
段と、前記装置内を大気圧に戻す手段と、大気圧に戻さ
れた前記装置内の塵埃濃度を測定する手段とを具備した
ものとすることにより、達成される。
The above object is to provide a depressurization processing device equipped with a means for depressurizing and exhausting the inside of the device, a means for returning the inside of the device to atmospheric pressure, and a means for measuring the dust concentration inside the device after being returned to atmospheric pressure. This is achieved by doing this.

〔作   用〕[For production]

減圧処理装置の装置内、例えば、プラズマ処理装置にお
いては、プラズマ処理室、搬送のためのバブファ室、ロ
ードロブタ室等内が減圧bi気手段の作動により減圧排
気される。その後、上記装置内は、パージ手段により大
気圧に戻される。大気正否こ戻された上記装置内の塵埃
濃度は、塵埃濃度測定手段により測定、例えば、浮遊要
項にH6−Neレーザを照射して塵埃からの散乱光を検
出することで測定される。このような操作が繰り返して
実施され、上記!1ltW内の測定塵埃濃度が目標値以
下になった時点で、クリーニング動作が完了する。
BACKGROUND ART In a reduced pressure processing apparatus, for example, in a plasma processing apparatus, the inside of a plasma processing chamber, a bubble chamber for transportation, a load lobster chamber, etc. is evacuated to a reduced pressure by operation of a reduced pressure bi-air means. Thereafter, the inside of the apparatus is returned to atmospheric pressure by the purge means. The dust concentration inside the apparatus, which has been returned to the atmosphere, is measured by a dust concentration measuring means, for example, by irradiating the floating point with an H6-Ne laser and detecting the scattered light from the dust. Such operations are repeated and the above! The cleaning operation is completed when the measured dust concentration within 1ltW becomes equal to or less than the target value.

従って、従来のように搬送後の試料に付着した異物数を
上記操作毎に測定する二とが不要になる。
Therefore, it is no longer necessary to measure the number of foreign substances attached to the sample after transportation, as in the conventional method, for each of the above-mentioned operations.

〔実 施 例〕〔Example〕

以下1本兄明の一実施例としてロードロック室に適用し
た場合について第1図、第2図蒼こより説明する。ロー
ドロック室1は下フタ2、上フタ3゜チャンバ4により
構成され、下フタ2.上フタ3はそjLぞれエアシリン
ダ等により独立に上下できる構造とするためにチャンバ
4との間に0リング5が設けられている。下フタ2が第
1図の状態から下降するとロードロック室1はバッファ
室(図示せず)あるいはプロセス室(図示せず)と連通
し、ウェハを搬送することが可能である。」−フタ3に
はウェハ受は渡しのための上下機構6とそのガイドのた
めの0リング7が設けられている。チャンバ4にはり−
クポ・−ト8とσ1気ボート9が設けられ、それぞれリ
ークガス供給系10.排気系11に接続されており、排
気系11に至る配管12にはロードロック室1内が大気
圧以上であることおよび真空であることを検出する大気
検出器13.真空検出器14が取り付けられている。ま
た、上フタ3Iこはサンプリング用ボート15が設けら
れており、電磁弁16を介して、ロードロック室1内よ
りサンプリングしたガス中の塵埃濃度を測定する塵埃濃
度測定n17が設けられている。なお、1を磁弁16は
大気検出器13の信号により動作する。
The case where the present invention is applied to a load lock chamber will be described below as an embodiment of the present invention with reference to FIGS. 1 and 2. The load lock chamber 1 is composed of a lower lid 2, an upper lid 3° chamber 4, and a lower lid 2. An O-ring 5 is provided between the upper lid 3 and the chamber 4 so that the upper lid 3 can be raised and lowered independently using an air cylinder or the like. When the lower lid 2 is lowered from the state shown in FIG. 1, the load lock chamber 1 communicates with a buffer chamber (not shown) or a process chamber (not shown), allowing wafers to be transferred. - The lid 3 is provided with an up-and-down mechanism 6 for transferring the wafer holder and an O-ring 7 for guiding it. Glue to chamber 4-
A leak gas supply system 10 is provided, and a leak gas supply system 10 is provided. Connected to the exhaust system 11, a pipe 12 leading to the exhaust system 11 includes an atmosphere detector 13. which detects whether the inside of the load lock chamber 1 is at atmospheric pressure or higher and is in a vacuum. A vacuum detector 14 is attached. Further, a sampling boat 15 is provided on the upper lid 3I, and a dust concentration measurement n17 for measuring the dust concentration in the gas sampled from inside the load lock chamber 1 via the solenoid valve 16 is provided. Note that the magnetic valve 16 is operated by a signal from the atmospheric detector 13.

第2図で、ロードロック室lの上フタ3および下フタ2
がそれぞれに下降、上昇した状態で排気動作を行いなが
らリーク動作を行いクリーニングを実施する。また、こ
の状態では大気圧検出器13が動作しないようにリーク
ガス流蓋が調整されており、電磁弁+6は動作せずロー
ドロック室lと塵埃濃度fAl定器17は連通されない
。その後、リーク動作を継続して行いながら排気動作を
停止するとロードロック室l内は大気圧以上となり大気
検出W 13 、電磁弁16が動作し、サンプリング用
ポートbよりロードロガク室1内のり−クガスにより巻
き上げられた塵埃を含むガスが塵埃濃度測定器17に導
かれる。そして、塵埃@度圓定1ii17に所定時間内
にサンプリングさnたガスの塵埃濃度が表示される。そ
の値が目標値以下であれはクリーニングを終rするが、
目標値以上であればクリーニングと塵埃濃度測定動作を
目標値以下になるまで繰り返し実施する。
In Fig. 2, the upper lid 3 and lower lid 2 of the load lock chamber l are
Cleaning is carried out by performing a leak operation while performing an exhaust operation while the air is lowered and raised respectively. Further, in this state, the leak gas flow cover is adjusted so that the atmospheric pressure detector 13 does not operate, the solenoid valve +6 does not operate, and the load lock chamber 1 and the dust concentration fAl regulator 17 are not communicated. After that, when the exhaust operation is stopped while continuing the leak operation, the pressure inside the load lock chamber 1 becomes higher than atmospheric pressure, and the atmospheric pressure is detected W 13 , the solenoid valve 16 is activated, and the leak gas in the load lock chamber 1 is drawn up from the sampling port b. The dust-containing gas thus collected is guided to a dust concentration measuring device 17. Then, the dust concentration of the gas sampled within a predetermined period of time is displayed in Dust@degree_en_determination1ii17. If the value is below the target value, cleaning will end, but
If it is above the target value, the cleaning and dust concentration measurement operations are repeated until it becomes below the target value.

なお、ロードロック室l内の塵埃濃度の目標値は、塵埃
!1度と排気、リーク時の異物付着数の関係を予め実験
により求めて設定する。
In addition, the target value for the dust concentration in the load lock chamber l is Dust! The relationship between the number of foreign substances attached at one time, exhaust, and leak is determined and set in advance through experiments.

本実施例によれば、従来のように、搬送後の試料に付着
した異物数をクリーニング動作毎に測定することが不要
になるので、ロードロック室のクリーニングの終Tを容
易に検出できると共に、それに要する時間を短縮できる
。また、ロードロック室のクリーニングに要する時間を
短縮できるので、ロードロック室の稼動率を向上でき、
スループ、トな向上できる。
According to this embodiment, unlike the conventional method, it is not necessary to measure the number of foreign substances attached to the sample after being transported for each cleaning operation, so the end T of cleaning the load lock chamber can be easily detected. The time required for this can be shortened. In addition, the time required to clean the load lock chamber can be shortened, improving the operation rate of the load lock chamber.
Sloop can be greatly improved.

なお、皇紀−実施例の他(二〇−ドロブク室内ガスをサ
ンプリングすることなしに、直接ロードロック室内の塵
埃濃度を測定するように構成しても良い。また、上記一
実施例のようにロードロブタ室内ガスをサンプリングす
る場合、該力スのサンプリングは、ロードロック室内で
最も塵埃が多い場所に対応して行うよう(こした方が望
ましい。
In addition to the embodiment of the Kouki, the dust concentration in the load lock chamber may be directly measured without sampling the gas in the room. When sampling room gas, it is preferable to sample the gas in the area with the most dust in the load lock chamber.

〔発明の効果〕〔Effect of the invention〕

本5も明によれば、減圧処理装置内のクリーニングの終
了を容易に検出でき、それに要する時間を短縮できる効
果がある。
According to Book 5, it is possible to easily detect the end of cleaning inside the vacuum processing apparatus, and the time required for this can be shortened.

【図面の簡単な説明】[Brief explanation of the drawing]

1g1図は本発明の一実施例の減圧処理装置のロードロ
ック室部の装置構成図、第2図は第1図でのクリーニン
グ動作線図である。 1・・・・・・ロードロック室、lO・・・・・・リー
クガス供給系、 11・・・・・・排気系、 13・・
・・・・大気検出器、15・・・・・・サンプリング用
ボート、16・・・・・・電磁弁、17・・・・・・塵
埃濃度測定器 イ2図
1g1 is a device configuration diagram of a load lock chamber portion of a decompression processing apparatus according to an embodiment of the present invention, and FIG. 2 is a cleaning operation diagram in FIG. 1. 1...Load lock chamber, lO...Leak gas supply system, 11...Exhaust system, 13...
...Atmospheric detector, 15...Sampling boat, 16...Solenoid valve, 17...Dust concentration measuring device Fig. 2

Claims (1)

【特許請求の範囲】[Claims] 1、減圧下で試料を処理する装置において、前記装置内
を減圧排気する手段と、前記装置内を大気圧に戻す手段
と、大気圧に戻された前記装置内の塵埃濃度を測定する
手段とを具備したことを特徴とする減圧処理装置。
1. In an apparatus for processing a sample under reduced pressure, means for evacuating the inside of the apparatus under reduced pressure, means for returning the inside of the apparatus to atmospheric pressure, and means for measuring the dust concentration in the apparatus after being returned to atmospheric pressure. A decompression processing device characterized by comprising:
JP10035988A 1988-04-25 1988-04-25 Device for treatment under reduced pressure Pending JPH01270933A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10035988A JPH01270933A (en) 1988-04-25 1988-04-25 Device for treatment under reduced pressure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10035988A JPH01270933A (en) 1988-04-25 1988-04-25 Device for treatment under reduced pressure

Publications (1)

Publication Number Publication Date
JPH01270933A true JPH01270933A (en) 1989-10-30

Family

ID=14271886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10035988A Pending JPH01270933A (en) 1988-04-25 1988-04-25 Device for treatment under reduced pressure

Country Status (1)

Country Link
JP (1) JPH01270933A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04281834A (en) * 1991-03-07 1992-10-07 Nec Yamagata Ltd Vacuum device
US5259407A (en) * 1990-06-15 1993-11-09 Matrix Inc. Surface treatment method and apparatus for a semiconductor wafer
US6105592A (en) * 1997-07-21 2000-08-22 Semitool, Inc. Gas intake assembly for a wafer processing system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5259407A (en) * 1990-06-15 1993-11-09 Matrix Inc. Surface treatment method and apparatus for a semiconductor wafer
JPH04281834A (en) * 1991-03-07 1992-10-07 Nec Yamagata Ltd Vacuum device
US6105592A (en) * 1997-07-21 2000-08-22 Semitool, Inc. Gas intake assembly for a wafer processing system

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