JP2735231B2 - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JP2735231B2 JP2735231B2 JP20126588A JP20126588A JP2735231B2 JP 2735231 B2 JP2735231 B2 JP 2735231B2 JP 20126588 A JP20126588 A JP 20126588A JP 20126588 A JP20126588 A JP 20126588A JP 2735231 B2 JP2735231 B2 JP 2735231B2
- Authority
- JP
- Japan
- Prior art keywords
- exhaust
- processing chamber
- semiconductor manufacturing
- dust
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Cleaning In General (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体製造装置に関し、特にイオン注入・ス
パッタ・プラズマエッチング等の各工程で使用される予
備排気室を有する半導体製造装置に関する。Description: BACKGROUND OF THE INVENTION The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a semiconductor manufacturing apparatus having a preliminary exhaust chamber used in each step of ion implantation, sputtering, plasma etching and the like.
従来、この種の半導体製造装置の処理室は、通常クラ
イオポンプやターボポンプ等で高真空に保持されるだけ
であった。Conventionally, the processing chamber of this type of semiconductor manufacturing apparatus has only been usually maintained at a high vacuum by a cryopump or a turbopump.
上述した従来の半導体製造装置は、処理室内の各種の
製造工程の処理動作において、ほとんどの処理装置がゴ
ミを発生させる動作であるにもかかわらず、処理動作完
了後や処理待ちの間でも真空に引き続けるため、処理室
内の雰囲気の流れは、ゴミの流れの少ない分子流領域か
それに近い状態となり発生したゴミが各種工程の処理を
重ねるに連れ増加するという欠点があった。In the conventional semiconductor manufacturing apparatus described above, in the processing operation of various manufacturing processes in the processing chamber, although most processing apparatuses are operations that generate dust, the vacuum is maintained even after the processing operation is completed or while waiting for processing. Since the flow is continued, the flow of the atmosphere in the processing chamber is in a molecular flow region where the flow of dust is small or close to the molecular flow region, and there is a disadvantage that the generated dust increases as the processes of various processes are repeated.
本発明の目的は、ゴミの少ない処理室を有する半導体
製造設備を提供することにある。An object of the present invention is to provide a semiconductor manufacturing facility having a processing room with less waste.
本発明の半導体製造装置は、室内の半導体ウェーハを
取扱うために排気系により制御され真空に近い状態に保
たれる処理室を有する半導体製造装置において、前記処
理室のゴミ数を測定するゴミ検査装置と、該ゴミ検査装
置の測定結果が否の判定の場合前記処理室に不活性ガス
を導入した後前記排気系を制御する排気制御システムと
を付加して構成されている。A semiconductor manufacturing apparatus according to the present invention is a semiconductor manufacturing apparatus having a processing chamber controlled by an exhaust system to keep semiconductor wafers in a room and kept in a state close to a vacuum, and a dust inspection apparatus for measuring the number of dust in the processing chamber. And an exhaust control system that controls the exhaust system after introducing an inert gas into the processing chamber when the measurement result of the dust inspection device is negative.
次に、本発明について図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.
第１図は本発明の第１の実施例のブロック図である。 FIG. 1 is a block diagram of a first embodiment of the present invention.
半導体製造装置は、排気バルブ8a,8bを介して高真空
ポンプ9,低真空ポンプ10及びN2ガス供給のガスバルブ６
とに接続しかつ内部の処理テーブル11に被処理の半導体
ウェーハ12を載置する処理室１と、処理室１にゲートＧ
を通して半導体ウェーハ12を供給する予備排気室５と、
処理室１のゴミを検査するゴミセンサ２及びゴミ検査装
置３と、ゴミ検査装置３の信号を受けてガスバルブ6,排
気バルブ8a〜8cを制御する排気制御システム４とを含ん
で構成されている。The semiconductor manufacturing apparatus includes a high vacuum pump 9, a low vacuum pump 10, and a gas valve 6 for supplying N 2 gas through exhaust valves 8a and 8b.
And a processing chamber 1 for mounting a semiconductor wafer 12 to be processed on an internal processing table 11 and a gate G
A preliminary exhaust chamber 5 for supplying a semiconductor wafer 12 through the
The apparatus includes a dust sensor 2 and a dust inspection device 3 for inspecting dust in the processing chamber 1, and an exhaust control system 4 that receives a signal from the dust inspection device 3 and controls the gas valve 6 and the exhaust valves 8a to 8c.
半導体ウェーハ12は、予備排気室５からゲートＧを通
って処理室１に入り、処理テーブル11上で各種の処理を
受ける。The semiconductor wafer 12 enters the processing chamber 1 from the preliminary exhaust chamber 5 through the gate G, and receives various processes on the processing table 11.
処理室５は処理中や処理待ちの間は、排気バルブ8aを
介し高真空ポンプ9,そして排気バルブ8cを介し低真空ポ
ンプ10へ排気されるため、高真空に保持されている。The processing chamber 5 is evacuated to a high vacuum pump 9 via an exhaust valve 8a and to a low vacuum pump 10 via an exhaust valve 8c during processing or while waiting for processing, so that the processing chamber 5 is maintained at a high vacuum.
所定時間になると、ゴミセンサ２が作動しゴミ数を測
定し良否判定を行ない、否の判定の場合は、排気制御シ
ステム４に制御信号を出力する。When the predetermined time has elapsed, the dust sensor 2 is operated to measure the number of dusts, and a pass / fail judgment is made. In the case of a negative judgment, a control signal is output to the exhaust control system 4.
排気制御システム４は信号を受けると各部の状態を確
認後、排気バルブ8aを閉じる。Upon receiving the signal, the exhaust control system 4 checks the state of each part, and then closes the exhaust valve 8a.
なお、排気バルブ8bは通常は閉じておく。 Note that the exhaust valve 8b is normally closed.
その後制御システム４は、ガスバルブ６を開いてN2ガ
スを導入し処理室１の内部を分子流領域から粘性流領域
に変化させ、所定時間後ガスバルス６を閉じて排気バル
ブ8cを閉じ、そして8bを開くことで内部のゴミをN2ガス
と同時に排気する。Thereafter, the control system 4 opens the gas valve 6 and introduces N 2 gas to change the inside of the processing chamber 1 from the molecular flow region to the viscous flow region. After a predetermined time, the gas valve 6 is closed, the exhaust valve 8c is closed, and 8b By opening, the inside dust is exhausted simultaneously with the N 2 gas.
圧力計7a,7cの値が高真空ポンプ９の作動領域となっ
たら、制御システム４は排気バルブ8bを閉じて排気バル
ブ8c,8aは開き処理のできる真空度に戻し制御サイクル
を終了する。When the values of the pressure gauges 7a and 7c are in the operating range of the high vacuum pump 9, the control system 4 closes the exhaust valve 8b and opens the exhaust valves 8c and 8a to return to a degree of vacuum that can be processed, and ends the control cycle.
第２図は本発明の第２の実施例のブロック図面であ
る。FIG. 2 is a block diagram of a second embodiment of the present invention.
処理室１は、排気バルブ８を介して低真空ポンプ10で
常時排気されている。The processing chamber 1 is constantly evacuated by a low vacuum pump 10 via an exhaust valve 8.
この実施例においてもゴミセンサ２で測定されたゴミ
数の結果から排気制御システム４を動作させガスバルブ
６と排気バルブ８を制御して粘性流領域へ戻してのゴミ
排気を達成出来る利点がある。Also in this embodiment, there is an advantage that the exhaust control system 4 is operated based on the result of the number of dusts measured by the dust sensor 2 to control the gas valve 6 and the exhaust valve 8 so that dust can be returned to the viscous flow region and exhausted.
以上説明したように本発明は、処理室内部のゴミ数を
測定するゴミ検査装置で異常を発見した場合、排気制御
システムが連動して不活性ガス導入から排気系を制御し
てゴミを排気する工程を行うため、半導体ウェーハの各
種処理工程での処理室内雰囲気のゴミ数増加を防止でき
る効果がある。As described above, according to the present invention, when an abnormality is found in the dust inspection device that measures the number of dusts inside the processing chamber, the exhaust control system interlocks to control the exhaust system from introducing the inert gas to exhaust the dust. Since the process is performed, there is an effect that it is possible to prevent an increase in the number of dusts in the atmosphere in the processing chamber in various processing steps of the semiconductor wafer.
第１図は本発明の第１の実施例のブロック図、第２図は
本発明の第２の実施例のブロック図である。 １……処理室、２……ゴミセンサ、３……ゴミ検査装
置、４……排気制御システム、５……予備排気室、６…
…ガスバルブ、8a,8b及び8c……排気バルブ、９……真
空ポンプ、10……低真空ポンプ、11……処理テーブル、
12……半導体ウェーハ、Ｇ……ゲート。FIG. 1 is a block diagram of a first embodiment of the present invention, and FIG. 2 is a block diagram of a second embodiment of the present invention. 1 processing chamber, 2 dust sensor, 3 dust inspection device, 4 exhaust control system, 5 spare exhaust chamber, 6
... gas valves, 8a, 8b and 8c ... exhaust valves, 9 ... vacuum pumps, 10 ... low vacuum pumps, 11 ... processing tables,
12: Semiconductor wafer, G: Gate.
Claims (1)
系により制御され真空に近い状態に保たれる処理室を有
する半導体製造装置において、前記処理室のゴミ数を測
定するゴミ検査装置と、該ゴミ検査装置の測定結果が否
の判定の場合前記処理室に不活性ガスを導入した後前記
排気系を制御する排気制御システムとを付加したことを
特徴とする半導体製造装置。1. A semiconductor manufacturing apparatus having a processing chamber controlled by an exhaust system and kept in a state close to a vacuum for handling semiconductor wafers in the chamber, a dust inspection apparatus for measuring the number of dusts in the processing chamber, A semiconductor manufacturing apparatus, further comprising an exhaust control system for controlling the exhaust system after introducing an inert gas into the processing chamber when the measurement result of the dust inspection device is negative.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20126588A JP2735231B2 (en) | 1988-08-12 | 1988-08-12 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20126588A JP2735231B2 (en) | 1988-08-12 | 1988-08-12 | Semiconductor manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0250422A JPH0250422A (en) | 1990-02-20 |
| JP2735231B2 true JP2735231B2 (en) | 1998-04-02 |
Family
ID=16438085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20126588A Expired - Lifetime JP2735231B2 (en) | 1988-08-12 | 1988-08-12 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2735231B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05102550A (en) * | 1991-10-08 | 1993-04-23 | Nec Corp | Color liquid crystal film formation device |
| JP3020389B2 (en) * | 1993-08-19 | 2000-03-15 | シャープ株式会社 | Tuner circuit |
| KR100764736B1 (en) * | 2004-12-09 | 2007-10-08 | 삼성전자주식회사 | Data drive integrated circuit reduced size and display apparatus having that |
-
1988
- 1988-08-12 JP JP20126588A patent/JP2735231B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0250422A (en) | 1990-02-20 |
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