JPH01267906A - Dielectric porcelain compound - Google Patents

Dielectric porcelain compound

Info

Publication number
JPH01267906A
JPH01267906A JP63097073A JP9707388A JPH01267906A JP H01267906 A JPH01267906 A JP H01267906A JP 63097073 A JP63097073 A JP 63097073A JP 9707388 A JP9707388 A JP 9707388A JP H01267906 A JPH01267906 A JP H01267906A
Authority
JP
Japan
Prior art keywords
dielectric
compound
subcomponent
nb2o5
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63097073A
Other languages
Japanese (ja)
Other versions
JP2676778B2 (en
Inventor
Hidenori Kuramitsu
秀紀 倉光
Wataru Kurahashi
倉橋 渡
Tetsuo Wano
和野 哲雄
Takashi Iguchi
隆 井口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP63097073A priority Critical patent/JP2676778B2/en
Publication of JPH01267906A publication Critical patent/JPH01267906A/en
Application granted granted Critical
Publication of JP2676778B2 publication Critical patent/JP2676778B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a dielectric porcelain compound of high quality characterized by high level of dielectric constant, insulation resistance, and dielectric breakdown voltage by adding 0.1 to 10.0 weight part of Nb2O5 as a subcomponent to a compound which is primarily composed of SrO, CaO, TiO2 and ZrO. CONSTITUTION:In a compound whose primary components fall in the region of mole ratio in which x, y, z in an expression I are encircled by (a) (x=0.27, y=0.21, z=0.52), (b) (x=0.31, y=0.20, z=0.49), (c) (x=0.33, y=0.16, z=0.51), (d) (x=0.29, y=0.17, z=0.54) respectively, 0.1 to 10.0 weight part of Nb2O5 is contained as a subcomponent. These materials are mixed together for example in a wet process and after drying, they are Calcined for 2hours at 1100degrees centigrade. After being ground into powder and then molded the material is put in a mortar that is made of high purity alumina with ZrO2 powder spread on the bottom and then is calcined for 2hours at 1380degrees Centigrade, thus a dielectric porcelain being obtained. Thereby a dielectric porcelain compound of high quality which is characterized by high level of dielectric constant, insulation resistance and dielectric breakdown voltage and by a small coefficient of temperature can be obtained.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は誘電率、絶縁抵抗及び絶縁破壊電圧が高く、良
好度Qにすぐれ、温度係数の小さくかつ焼成温度変動の
影響を受は難い誘電体磁器組成物に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is directed to dielectric porcelain that has a high dielectric constant, insulation resistance, and breakdown voltage, has an excellent quality Q, has a small temperature coefficient, and is not easily affected by firing temperature fluctuations. The present invention relates to a composition.

従来の技術 従来から誘電体磁器組成物として、下記のような系が知
られている。
BACKGROUND OF THE INVENTION The following systems have been known as dielectric ceramic compositions.

La20.−2TiO2−CaTiO,−2Mg0−T
ie2系Tie2−BaTiO,−Bi20.−La2
05系BaTi05系 5rTiO、系 CaTi0.系 5rTiO5−CaTi0.系 MgTi0.系 5rTiO,−CaTi0.−Nb2O5系発明が解決
しようとする課題 しかし、これらの一つの組成物が高い誘電率。
La20. -2TiO2-CaTiO, -2Mg0-T
ie2 system Tie2-BaTiO, -Bi20. -La2
05 series BaTi05 series 5rTiO, series CaTi0. System 5rTiO5-CaTi0. System MgTi0. System 5rTiO, -CaTi0. The problem that the -Nb2O5-based invention seeks to solve, however, is that one of these compositions has a high dielectric constant.

小さい温度係数、すぐれた良好度及び焼成温度変動の影
響を受は難いなど、全てを満足することは不可能である
It is impossible to satisfy all of the requirements, such as a small temperature coefficient, excellent quality, and low sensitivity to firing temperature fluctuations.

さらに、Bi□03を含んでいるものは、積層セラミッ
クコンデンサの内部電極として、Pdを用いることがで
きないという問題点があった。
Furthermore, a capacitor containing Bi□03 has the problem that Pd cannot be used as an internal electrode of a multilayer ceramic capacitor.

本発明は誘電率、絶縁抵抗及び絶縁破壊電圧が高く・良
好度にすぐれ・温度係数?小さくかつ焼成温度変動の影
響を受は難い誘電体磁器組成物を得ることを目的とする
ものである。
The present invention has high dielectric constant, insulation resistance, and breakdown voltage, excellent quality, and temperature coefficient? The object of the present invention is to obtain a dielectric ceramic composition that is small and hardly affected by fluctuations in firing temperature.

課題を解決するための手段 この問題点を解決するために本発明は、−紋穴%式%)
) と表わした時、 ただし、x+7+z==1.o。
Means for Solving the Problems In order to solve this problem, the present invention provides
), where x+7+z==1. o.

00o1≦m≦o、20 ” + 3’ * zが以下に表わす各点a、b、c、
dで囲まれるモル比の範囲を主成分とする組成物に対し
、副成分としてNb2O5を0.1〜10.0重量%含
有することを特徴とするものである。
00o1≦m≦o, 20 ” + 3' * z is each point a, b, c,
The composition is characterized in that it contains 0.1 to 10.0% by weight of Nb2O5 as a subcomponent to a composition whose main component is in the molar ratio range surrounded by d.

第1図は本発明にかかる組成物の主成分の組成範囲を示
す三角図であり、主成分の組成範囲を限定した理由を図
を参照しながら説明する。すなわち、ム領域とC領域で
は温度係数が(−)側に大きくなり過ぎて、実用的でな
くなる。また、B領域とD領域では焼結困難となり、誘
電率、良好度Q。
FIG. 1 is a triangular diagram showing the composition range of the main components of the composition according to the present invention, and the reason for limiting the composition range of the main components will be explained with reference to the diagram. That is, the temperature coefficient becomes too large on the (-) side in the M region and the C region, making it impractical. In addition, sintering becomes difficult in the B region and D region, and the dielectric constant and good quality Q.

絶縁抵抗が低下する。Insulation resistance decreases.

第2図と第3図は主成分中のTie2の一部分を置換す
るZrO2の比率mの効果を示すグラフであり、ZrO
□の置換範囲を限定した理由をグラフを参照しながら説
明する。まず、Tie、の一部分をZrO、で置換する
ことにより、第2図に示すように絶縁抵抗を増加させ、
また第3図に示すように焼成温度に、よる温度係数変動
を小さくする効果を有し、その置換率lが0.01未満
では置換効果はなく、一方0.2を越えると焼結困難と
なり、誘電率、良好度Q、絶縁抵抗が低下する。
Figures 2 and 3 are graphs showing the effect of the ratio m of ZrO2 that replaces a part of Tie2 in the main component;
The reason for limiting the replacement range of □ will be explained with reference to the graph. First, by replacing a portion of Tie with ZrO, the insulation resistance is increased as shown in FIG.
In addition, as shown in Figure 3, it has the effect of reducing temperature coefficient fluctuations due to the firing temperature, and if the substitution rate l is less than 0.01, there is no substitution effect, while if it exceeds 0.2, sintering becomes difficult. , dielectric constant, quality Q, and insulation resistance decrease.

第4図は、主成分に対し、外側で添加される副成分とし
てのNb2O5の含有の効果を示すグラフであり、Nb
、05の含有範囲を限定した理由をグラフを参照しなが
ら説明する。まず、第4図に示すようにNb2O5を含
有することKより、破壊電圧を増大する効果を有し、そ
の含有量が主成分に対し0.1重量%未満では含有効果
はなく、反対に10.0重量%を越えると良好度Qが低
下し、温度係数が(−)側に大きくなり、実用的でなく
なる。
FIG. 4 is a graph showing the effect of containing Nb2O5 as a subcomponent added outside to the main component.
, 05 will be explained with reference to the graph. First, as shown in Fig. 4, the inclusion of Nb2O5 has the effect of increasing the breakdown voltage, but if the content is less than 0.1% by weight with respect to the main component, there is no effect of the inclusion; If it exceeds 0.0% by weight, the goodness Q will decrease and the temperature coefficient will increase toward the (-) side, making it impractical.

本発明はさらに、上記主成分と副成分からなる組成物に
対し、マンガン、クロム、鉄、ニッケル。
The present invention further provides manganese, chromium, iron, and nickel for the composition consisting of the above main components and subcomponents.

コバルト及びケイ素の酸化物からなる群の中から選ばれ
た少なくとも1種類を、それぞれMnO□。
At least one selected from the group consisting of cobalt and silicon oxides is MnO□.

Or、O,、FeO、NiO、Coo 、 Sin、に
換算して、0.06〜1.00重量%添加含有した構成
としたものである。これらの添加物は磁器の焼結性を向
上する効果を有し、その添加量が0.06重量%未満で
は添加効果はなく、また1、00重量%を越えると誘電
率が低下することになる。
The composition contains 0.06 to 1.00% by weight of Or, O, FeO, NiO, Coo, and Sin. These additives have the effect of improving the sinterability of porcelain, but if the amount added is less than 0.06% by weight, there is no addition effect, and if it exceeds 1,00% by weight, the dielectric constant will decrease. Become.

作用 本発明の誘電体磁器組成物により、誘電率、絶縁抵抗及
び絶縁破壊電圧が高く、良好度Qにすぐれ、温度係数の
小さく、かつ焼結温度変動の影響を受は難い誘電体磁器
組成物を得ることができる。
Effect The dielectric ceramic composition of the present invention has a high dielectric constant, insulation resistance, and dielectric breakdown voltage, has an excellent quality Q, has a small temperature coefficient, and is hardly affected by sintering temperature fluctuations. can be obtained.

実施例 以下、本発明を具体的実施例により説明する。Example The present invention will be explained below using specific examples.

(実施例1) 出発原料には化学的に高純度の5rCO,、CaCO3
゜Tie2. ZrO,及びWb20.粉末を下記の第
1表に示す組成になるように秤量し、めのうボールを備
えたゴム内張りしたボールミルに純水とともに入れ、2
0時間、湿式混合した。この混合物を脱水乾燥後、11
00°Cで2時間仮焼成した。粗粉砕後、再度、めのう
ボールを備えたゴム内張りしたボールミルに純水ととも
に入れ、20時間、湿式粉砕を行った。この粉砕物を脱
水乾燥した後、粉末にバインダーとして濃度5%のポリ
ビニルアルコール水溶液を9重量%添加して均質とした
後、32メソシユのふるいを通して整粒した。次に、と
の整粒粉体を金型と油圧プレスを用いて成形圧力1to
n/adで直径15咽、厚みo、4gに成形し、次いで
この成形物をZrO2粉を敷いた高純度のアルミナ匣鉢
中に入れ、空気中において下記の第1表に示す温度で2
時間焼成し、下記の第1表に示す配合組成の誘電体磁器
を得た。
(Example 1) Chemically highly purified 5rCO, CaCO3 was used as the starting material.
゜Tie2. ZrO, and Wb20. Weigh the powder so that it has the composition shown in Table 1 below, place it in a rubber-lined ball mill equipped with an agate ball together with pure water, and
Wet mixing was carried out for 0 hours. After dehydrating and drying this mixture, 11
Temporary firing was performed at 00°C for 2 hours. After coarse pulverization, the mixture was again placed in a rubber-lined ball mill equipped with agate balls together with pure water, and wet pulverized for 20 hours. After the pulverized product was dehydrated and dried, 9% by weight of an aqueous polyvinyl alcohol solution with a concentration of 5% was added to the powder as a binder to make it homogeneous, and the powder was sized through a 32-mesh sieve. Next, the sized powder was molded using a mold and a hydraulic press at a pressure of 1 to
The molded product was molded to a diameter of 15 mm, thickness of 4 g, and then placed in a high-purity alumina sagger lined with ZrO2 powder, and heated in air at the temperature shown in Table 1 below.
Firing was performed for a period of time to obtain dielectric porcelain having the composition shown in Table 1 below.

これらの試料の電気特性は、試料の両面に銀電極を焼付
け、誘電率、良好度Q、温度係数は横河・ヒユーレット
・パラカード(株)のデジタルLCRメータモデル42
76Aを使用し、測定温度2゜°C2測定電圧1.o 
Vrms 、測定周波数1MHzによる測定で求めた。
The electrical properties of these samples were determined by baking silver electrodes on both sides of the samples, and measuring the dielectric constant, goodness Q, and temperature coefficient using a digital LCR meter model 42 manufactured by Yokogawa-Heuret Paracard Co., Ltd.
Using 76A, measurement temperature: 2°C2 measurement voltage: 1. o
Vrms was determined by measurement at a measurement frequency of 1 MHz.

尚、温度係数は20°Cにおける容量値を基準とし、次
式より求めた。
The temperature coefficient was determined from the following formula using the capacitance value at 20°C as a reference.

温度係数=(Css℃−C2o℃)/(020℃×65
)X 10 (1)pm /℃) また、絶縁抵抗は横河・ヒユーレット・パラカード(株
)のHRメータモデル4329人を使用し、測定電圧り
、C,so V 、測定時間1分間による測定で求めた
。さらに、絶縁破壊電圧は菊水電子工業(株)の高電圧
電源PH536に一3形を使用し、昇圧速度50 V 
/ 3510により求めた絶縁破壊電圧を素子厚みで除
算し、単位長さ当たりの絶縁破壊電圧値とした。これら
の試験条件及び結果を第1表に併せて示す。
Temperature coefficient = (Css℃−C2o℃)/(020℃×65
)X 10 (1) pm/℃) Insulation resistance was measured using HR meter model 4329 manufactured by Yokogawa-Heuret Paracard Co., Ltd., and the measurement voltage was C,so V, and the measurement time was 1 minute. I asked for it. Furthermore, the dielectric breakdown voltage was determined by using a type 13 high voltage power supply PH536 manufactured by Kikusui Electronics Co., Ltd., and a boosting speed of 50 V.
/ 3510 was divided by the element thickness to obtain the dielectric breakdown voltage value per unit length. These test conditions and results are also shown in Table 1.

(以下余 白) (実施例2) 出発原料には化学的に高純度のSrCO3,CaC0,
lTi02 、ZrO2,Wb 205.MnO2、C
r 203jeo 、Nip、Co。
(Left below) (Example 2) Starting materials include chemically highly purified SrCO3, CaC0,
lTi02, ZrO2, Wb 205. MnO2,C
r 203jeo, Nip, Co.

及び5102粉末を下記の第2表に示す組成になるよう
に秤量し、それ以後は上記実施例1の場合と同様に処理
して第2表に示す配合組成の誘電体磁器を得た。
and 5102 powder were weighed to have the compositions shown in Table 2 below, and thereafter treated in the same manner as in Example 1 above to obtain dielectric ceramics having the compositions shown in Table 2.

これらの試料の試験方法は実施例1と同一であり、試験
条件及び結果を第2表に併せて示す。
The test methods for these samples were the same as in Example 1, and the test conditions and results are also shown in Table 2.

(以下余 白) 発明の効果 以上のように本発明によれば、誘電率、絶縁抵抗及び絶
縁破壊電圧が高く、良好度Qにすぐれ、温度係数の小さ
く、かつ焼成温度変動の影響を受は難い誘電体磁器を得
ることができる0また、マンガン、クロム、鉄、ニッケ
ル、コノ(ルト及ヒケイ素の酸化物の添加により焼成温
度を低下させることができる。
(Left below) Effects of the Invention As described above, according to the present invention, the dielectric constant, insulation resistance and dielectric breakdown voltage are high, the quality Q is excellent, the temperature coefficient is small, and it is not affected by firing temperature fluctuations. In addition, the firing temperature can be lowered by adding oxides of manganese, chromium, iron, nickel, iron, and arsenic.

さらに、得られた誘電体磁器は高誘電率であるため、素
体をきわめて小形にすることができ、回路の微小化に有
効であり、特に薄板状にして積層セラミックコンデンサ
、)・イブリッド微小回路などの用途に適している0
Furthermore, since the obtained dielectric ceramic has a high dielectric constant, the element body can be made extremely small, and it is effective for miniaturizing circuits. Suitable for uses such as 0

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明に係わる副成分として1重量%Nb2O
5を含有する主成分の組成範囲を示す三角図、第2図は
本発明に係わる副成分として1重量%Nb2O5を含有
し、主成分の一般式 %式%)) と表わした時、 X=0.30  、Y二0.19  、  m=0.5
1とし、Zr02の置換率mを0.26まで変化させた
時の特性の変化を示すグラフ、第3°図は本発明に係わ
る副成分として1重量%Nb2O5を含有し、主成分の
一般式 %式%)) と表わしだ時、 x=0.30  、 7==0.19  、  z=0
.51とし、ZrO□の置換率mを0.26まで変化さ
せ、さらに焼成温度を1340〜1380°Ctで変化
させた時の温度特性の変化を示すグラフ、第4図は本発
明に係わる主成分の一般式 %式%):] と表わした時、 !=0.30  、 7=0.19 、 m=0.51
 、 m=0.06とし、副成分Nb2o5の含有量を
16重量%まで変化させた時の特性の変化を示すグラフ
である。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図 主成分に対しくJ成分NtnOslll:量2含有(T
iO2)fl−mXZPQ2)m(モ」しン第2図 二二v克駈トクJO8rO−0,19CaO−0,57
((7t02 )I+−+++i’ZrOz)mノ!誠
分圧例;九Nbt05 Zr(h 置換中m 第3図 Z、021換牽m
Figure 1 shows 1% by weight Nb2O as a subcomponent related to the present invention.
Fig. 2 is a triangular diagram showing the composition range of the main component containing 5, which contains 1% by weight Nb2O5 as a subcomponent related to the present invention, and the general formula of the main component is expressed as 0.30, Y20.19, m=0.5
1, and the graph showing the change in characteristics when the substitution ratio m of Zr02 is changed up to 0.26. Figure 3 shows a graph containing 1% by weight Nb2O5 as a subcomponent related to the present invention, and a general formula of the main component. When expressed as % formula %)), x=0.30, 7==0.19, z=0
.. 51, the substitution ratio m of ZrO□ was changed to 0.26, and the calcination temperature was further changed from 1340 to 1380° Ct. Figure 4 shows the changes in temperature characteristics of the main components according to the present invention. General formula % formula %): ] When expressed as ! =0.30, 7=0.19, m=0.51
, is a graph showing changes in characteristics when m=0.06 and the content of subcomponent Nb2o5 is changed up to 16% by weight. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure J component NtnOsllll for principal component: amount 2 content (T
iO2)fl-mXZPQ2)m
((7t02)I+-+++i'ZrOz)mノ! True partial pressure example; 9Nbt05 Zr (h during replacement m Figure 3 Z, 021 replacement m

Claims (2)

【特許請求の範囲】[Claims] (1)一般式 xSrO−yCaO−z〔(TiO_2)_(_1_−
_m)・(ZrO_2)_m〕と表わした時、 ただし、x+y+z=1.00 0.01≦m≦0.20 x,y,zが以下に表わす各点a,b,c,dで囲まれ
るモル比の範囲を主成分とする組成物に対し、副成分と
してNb_2_O_5を0.1〜10.0重量%含有す
ることを特徴とする誘電体磁器組成物。
(1) General formula xSrO-yCaO-z [(TiO_2)_(_1_-
_m)・(ZrO_2)_m], where x+y+z=1.00 0.01≦m≦0.20 x, y, and z are surrounded by the points a, b, c, and d shown below. A dielectric ceramic composition characterized in that it contains 0.1 to 10.0% by weight of Nb_2_O_5 as a subcomponent with respect to the composition having a molar ratio of 0.1 to 10.0% by weight as a main component.
(2)請求項1記載の誘電体磁器組成物に対し、マンガ
ン,クロム,鉄,ニッケル,コバルト及びケイ素の酸化
物からなる群の中から選ばれた少なくとも1種を、それ
ぞれMnO_2,Cr_2O_5,FeO,NiO.C
oO及びSiO_2に換算して、0.05〜1.00重
量%添加含有したことを特徴とする誘電体磁器組成物。
(2) At least one selected from the group consisting of oxides of manganese, chromium, iron, nickel, cobalt and silicon is added to the dielectric ceramic composition according to claim 1, respectively. , NiO. C
A dielectric ceramic composition characterized in that it contains 0.05 to 1.00% by weight in terms of oO and SiO_2.
JP63097073A 1988-04-20 1988-04-20 Dielectric porcelain composition Expired - Fee Related JP2676778B2 (en)

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JPH01267906A true JPH01267906A (en) 1989-10-25
JP2676778B2 JP2676778B2 (en) 1997-11-17

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1125904A1 (en) * 2000-02-09 2001-08-22 TDK Corporation Dielectric ceramic composition, electronic device, and method for producing the same
US9249166B1 (en) 2011-12-02 2016-02-02 Sandia Corporation Delaminated sodium nonatitanate and a method for producing delaminated sodium nonatitanate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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Patent Citations (1)

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JPS60131708A (en) * 1983-12-19 1985-07-13 株式会社村田製作所 Nonreduced temperature compensating dielectric porcelain composition

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1125904A1 (en) * 2000-02-09 2001-08-22 TDK Corporation Dielectric ceramic composition, electronic device, and method for producing the same
US6627570B2 (en) 2000-02-09 2003-09-30 Tdk Corporation Dielectric ceramic composition, electronic device, and method of producing the same
US6933256B2 (en) 2000-02-09 2005-08-23 Tdk Corporation Dielectric ceramic composition, electronic device, and method for producing same
US9249166B1 (en) 2011-12-02 2016-02-02 Sandia Corporation Delaminated sodium nonatitanate and a method for producing delaminated sodium nonatitanate

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