JPH04167306A - Dielectric porcelain compound - Google Patents
Dielectric porcelain compoundInfo
- Publication number
- JPH04167306A JPH04167306A JP2292379A JP29237990A JPH04167306A JP H04167306 A JPH04167306 A JP H04167306A JP 2292379 A JP2292379 A JP 2292379A JP 29237990 A JP29237990 A JP 29237990A JP H04167306 A JPH04167306 A JP H04167306A
- Authority
- JP
- Japan
- Prior art keywords
- rare earth
- weight
- dielectric
- parts
- temperature coefficient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001875 compounds Chemical class 0.000 title abstract description 4
- 229910052573 porcelain Inorganic materials 0.000 title abstract description 4
- 239000000203 mixture Substances 0.000 claims abstract description 16
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 10
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 7
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 6
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 5
- 229910052772 Samarium Inorganic materials 0.000 claims abstract description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 claims abstract description 3
- 239000000919 ceramic Substances 0.000 claims description 8
- 230000015556 catabolic process Effects 0.000 abstract description 11
- 238000009413 insulation Methods 0.000 abstract description 11
- 239000000843 powder Substances 0.000 abstract description 7
- 239000011230 binding agent Substances 0.000 abstract description 2
- 238000005259 measurement Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 101100496968 Caenorhabditis elegans ctc-1 gene Proteins 0.000 description 1
- 229910002226 La2O2 Inorganic materials 0.000 description 1
- 101100221647 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) cox-1 gene Proteins 0.000 description 1
- 101150062589 PTGS1 gene Proteins 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000029305 taxis Effects 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は誘電率、絶縁抵抗、絶縁破壊電圧が高く、Ｑを
大幅に改善し、静電容量温度係数が小さい誘電体磁器を
得ることができる誘電体磁器組成物に関するものである
。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention provides a dielectric ceramic that has high dielectric constant, insulation resistance, and breakdown voltage, greatly improves Q, and has a small temperature coefficient of capacitance. The present invention relates to a body porcelain composition.
従来の技術
従来から、誘電率、絶縁抵抗が高く、Ｑにすぐれ、静電
容量温度係数が小さい誘電体磁器組成物として下記のよ
うな系が知られている。2. Description of the Related Art Conventionally, the following systems have been known as dielectric ceramic compositions having high dielectric constants, high insulation resistances, excellent Q values, and small temperature coefficients of capacitance.
’ ＢａＯ−Ｔｉ０ｚ −ＮｄｚＯｓ系・ ＢａＯＴｉ
１ｔ ＳｗｒｚＯｘ 系発明が解決しようと
する課題
しかし、これらの組成は、例えば０．０９ＢａＯ−０，
５６ＴｉＯ□−０，３５ＮｄＯｉｚ□の組成比からなる
誘電体材料を使用し、円板形磁器コンデンサを作製する
と、誘電率＝６７、静電容量温度係数： Ｎ４０ｐｐｍ
／”Ｃ，Ｑ： ３０００、絶縁抵抗： ８．０ｘｌ
Ｏ”Ω、絶縁破壊強度：３０ｋｖ／−であり、満足ので
きる値ではない。'BaO-Ti0z-NdzOs system/BaOTi
Problems to be solved by the 1t SwrzOx system invention However, these compositions, for example, 0.09BaO-0,
When a disk-shaped ceramic capacitor is manufactured using a dielectric material having a composition ratio of 56TiO□-0, 35NdOiz□, the dielectric constant = 67 and the capacitance temperature coefficient: N40ppm.
/”C,Q: 3000, insulation resistance: 8.0xl
O''Ω, dielectric breakdown strength: 30kv/-, which is not a satisfactory value.
課題を解決するための手段
これらの課題を解決するために本発明は、一般式
％式％
ｚ （Ｒｅ（＋−ｔ＋Ｍｅｔ） ０ｚｙｔと表した時
、（ただし、ｘ＋ｙ＋ｚ＝１．００．０．０１≦ｈ≦０
．３０．０，０１≦ｔ≦０．２０． ＲｅはＬａ＋ Ｐ
ｒ＋ Ｎｄ＋ Ｓｓから選ばれる一種以上の希土類元素
、 ＭｅはＬａ＋ Ｐｒ＋ Ｎｄ、 Ｓ−を除く希土類
元素から選ばれる一種以上の希土類元素。）、Ｘ。Means for Solving the Problems In order to solve these problems, the present invention uses the general formula % z (Re(+-t+Met) 0zyt, where x+y+z=1.00.0.01 ≦h≦0
．． 30.0,01≦t≦0.20. Re is La+P
One or more rare earth elements selected from r+ Nd+ Ss; Me is one or more rare earth elements selected from rare earth elements other than La+ Pr+ Nd and S-. ), X.
ｙ、ｚが以下に表す各点ａ、 ｂ、 ｃ、 ｄ、
ｅ、 ｆで囲まれるモル比の範囲からなる主成分
１００重量部に対し、副成分としてタンタル酸化物をＴ
ａ、Ｏ。Each point a, b, c, d, where y and z are represented below
Tantalum oxide is added as a subcomponent to 100 parts by weight of the main component having a molar ratio range surrounded by e and f.
a.O.
の形に換算して０．１〜１０．０重量部含有したことを
特徴とする誘電体磁器組成物を提案するものである。The present invention proposes a dielectric ceramic composition characterized in that it contains 0.1 to 10.0 parts by weight in terms of .
作用
第１図は本発明にかかる組成物の主成分の組成範囲を示
す三元図であり、主成分の組成範囲を限定した理由を第
１図を参照しながら説明する。すなわち、Ａｆ＋ＪＩ域
では焼結が著しく困難である。また、Ｂｔ＋ｉ域ではＱ
が低下し実用的でなくなる。さらに、Ｃ，ＤｔｒＪ域で
は静電容量温度係数がマイナス側に大きくなりすぎて実
用的でなくなる。そして、Ｅ領域では静電容量温度係数
がプラス方向に移行するが、誘電率が小さく実用的でな
くなる。FIG. 1 is a ternary diagram showing the composition range of the main components of the composition according to the present invention, and the reason for limiting the composition range of the main components will be explained with reference to FIG. That is, sintering is extremely difficult in the Af+JI region. Also, in the Bt+i region, Q
decreases and becomes impractical. Furthermore, in the C and DtrJ regions, the capacitance temperature coefficient becomes too large on the negative side, making it impractical. In region E, the temperature coefficient of capacitance shifts to a positive direction, but the dielectric constant is too small to be practical.
また、ＲｅをＬａ＋ Ｐｒ＋ Ｎｄ＋ Ｓｓから選ぶこ
とにより、Ｌａ、 Ｐｒ、 Ｎｄ、 Ｓｓの順で誘電率
を大きく下げることとなく、静電容量温度係数をプラス
方向に移行することが可能であり、Ｌａ、 Ｐｒ、 Ｎ
ｄ、 Ｓｓの一種あるいはそれらの組合せにより静電容
量温度係数の調節が可能である。さらに、Ｌａ＋ Ｐｒ
、 Ｎｄ、 Ｓｓから選ばれる一種以上の希土類元素の
一部を、Ｌａ、 Ｐｒ。In addition, by selecting Re from La + Pr + Nd + Ss, it is possible to shift the capacitance temperature coefficient in the positive direction without significantly lowering the dielectric constant in the order of La, Pr, Nd, and Ss, and , Pr, N
The temperature coefficient of capacitance can be adjusted by one type of d, Ss, or a combination thereof. Furthermore, La+Pr
La, Pr.
Ｎｄ、 Ｓｍを診＜希土類元素から選ばれる一種以上の
希土類元素で置換することにより、Ｑを大幅に改善する
効果を有しているが、その置換率ｔが０．０１未満では
置換効果はなく、一方、０．２０を超えると誘電率が低
下し実用的でなくなる。また、ＢａＯをＳｒＯで置換す
ることにより、静電容量温度係数、絶縁抵抗の値を大き
く変えることな（、誘電率、Ｑ、絶縁破壊強度を高くす
る効果を有しているが、その置換率りが０．０１未満で
は置換効果はなく、−方、０．３０を超えると絶縁抵抗
が低下し、静電容量温度係数もマイナス側に大きくなり
実用的でなくなる。また、主成分に対し、副成分子ａｚ
０５を含有することにより、絶縁抵抗、絶縁破壊強度が
向上する効果を有しているが、Ｔａｘｅｓの含有量が主
成分１００重量部に対し、０．１重量部未満ではそれほ
ど絶縁破壊強度が大きくなく、この発明の範囲から除外
した。一方、Ｔａ、０．の含有量が主成分に対し、１０
．０重量部を超えると、Ｑ、および絶縁抵抗が低下し、
静電容量温度係数がマイナス側に大きくなり実用的でな
くなる。By replacing Nd and Sm with one or more rare earth elements selected from rare earth elements, it has the effect of significantly improving Q, but if the substitution rate t is less than 0.01, there is no substitution effect. On the other hand, if it exceeds 0.20, the dielectric constant decreases and becomes impractical. In addition, by replacing BaO with SrO, it has the effect of increasing the capacitance temperature coefficient and insulation resistance (and increasing the dielectric constant, Q, and dielectric breakdown strength), but the substitution rate If the ratio is less than 0.01, there will be no substitution effect, and if it exceeds 0.30, the insulation resistance will decrease and the capacitance temperature coefficient will also increase to the negative side, making it impractical. Subcomponent molecule az
By containing 05, it has the effect of improving insulation resistance and dielectric breakdown strength, but if the content of Taxes is less than 0.1 part by weight with respect to 100 parts by weight of the main component, the dielectric breakdown strength is not so large. Therefore, it is excluded from the scope of this invention. On the other hand, Ta, 0. The content of is 10 to the main component.
．． When it exceeds 0 parts by weight, Q and insulation resistance decrease,
The temperature coefficient of capacitance increases to the negative side, making it impractical.
実施例 以下に、本発明を具体的実施例により説明する。Example The present invention will be explained below using specific examples.
（実施例１）
まず、出発原料には化学的に高純度のＴ ａ ２０ ｓ
＋Ｌａ２Ｏ５＋ ＰｒａＯ＋＋＋ ＮｄｚＯｔ、 Ｓ
Ｌｌｇｏｓ、 Ｃｅｎｔ、 Ｇｄ２０ｓ。(Example 1) First, chemically highly purified T a 20 s was used as the starting material.
+La2O5+ PraO+++ NdzOt, S
Llgos, Cent, Gd20s.
Ｄ）ｌｚｏｓ＋ Ｔｉ（ｈ、 ５ｒＣＯ＋およびＢａＣ
０＊粉末を下記の第１表に示す組成比になるように秤量
し、めのうボールを備えたゴム内張りのボールミルに純
水とともに入れ、湿式混合後、脱水乾燥した。この乾燥
粉末を高アルミナ質のルツボに入れ、空気中で１１００
°Ｃにて２時間仮焼した。この仮焼粉末を、めのうボー
ルを備えたゴム内張りのボールミルに純水とともに入れ
、湿式粉砕後、脱水乾燥した。D) lzos+ Ti(h, 5rCO+ and BaC
0* powder was weighed to have the composition ratio shown in Table 1 below, put into a rubber-lined ball mill equipped with agate balls together with pure water, wet-mixed, and then dehydrated and dried. This dry powder was placed in a high alumina crucible and heated to 1100 m
It was calcined at °C for 2 hours. This calcined powder was put into a rubber-lined ball mill equipped with agate balls together with pure water, wet-pulverized, and then dehydrated and dried.
この粉砕粉末に、有機バインダーを加え、均質とした後
、３２メソシユのふるいを通して整粒し、金型と油圧プ
レスを用いて成形圧力１ｉ（＋ｎ／Ｃｄで直径１５■、
厚み０．４閣に成形した。次いで、得られた成形円板を
ジルコニア粉末を敷いたアルミナ賞のサヤに入れ、空気
中にて下記の第１表に示す温度で２時間焼成し、第１表
に示す組成比の誘電体磁器を得た。After adding an organic binder to the pulverized powder and making it homogeneous, the powder was sized through a 32-mesh sieve, and molded using a mold and hydraulic press at a pressure of 1i (+n/Cd, diameter 15cm,
It was molded to a thickness of 0.4 mm. Next, the obtained molded disk was placed in an alumina pod covered with zirconia powder, and fired in air at the temperature shown in Table 1 below for 2 hours to form dielectric porcelain with the composition ratio shown in Table 1. I got it.
このようにして得られた誘電体磁器円板は、厚みと直径
と重量を測定し、誘電率、Ｑ、静電容量温度係数測定用
試料は、誘電体磁器円板の両面全体に銀電極を焼き付け
、絶縁抵抗、絶縁破壊強度測定用試料は、誘電体磁器円
板の外周より内側にＩＩＩＩＩｌｌの幅で銀電極のない
部分を設け、銀電極を焼き付けた。そして、誘電率、Ｑ
、静電容量温度係数は、横河・ヒユーレット・パソカー
ド■製デジタルＬＣＲメータのモデル４２７５Ａを使用
し、測定温度２０°Ｃ１測定電圧１．ＱＶｒｍｓ、測定
周波数ＩＭＨｚでの測定より求めた。なお、静電容量温
度係数は、２０°Ｃと８５°Ｃの静電容量を測定し、次
式により求めＴＣ＝ （Ｃ−Ｃｏ）／ＣｏＸ１／６５Ｘ
１０’ＴＣ：静電容量温度係数（ｐｐ閤／°Ｃ）Ｃｏ：
２０℃での静電容量（ｐＦ ）
Ｃ：８５℃での静電容量（ｐＦ ）
また、誘電率は次式より求めた。The thickness, diameter, and weight of the dielectric ceramic disk obtained in this way were measured, and the samples for measuring the dielectric constant, Q, and capacitance temperature coefficient were prepared using silver electrodes on both sides of the dielectric ceramic disk. A sample for measuring baking, insulation resistance, and dielectric breakdown strength was prepared by providing a portion without a silver electrode with a width of IIIll on the inner side of the outer periphery of a dielectric ceramic disk, and baking a silver electrode thereon. And the dielectric constant, Q
, the temperature coefficient of capacitance was determined using a digital LCR meter model 4275A manufactured by Yokogawa Huyulet Paso Card ■ at a measurement temperature of 20°C, a measurement voltage of 1. QVrms was determined by measurement at a measurement frequency of IMHz. The temperature coefficient of capacitance is determined by measuring the capacitance at 20°C and 85°C and using the following formula: TC= (C-Co)/CoX1/65X
10'TC: Capacitance temperature coefficient (pp/°C) Co:
Capacitance at 20° C. (pF) C: Capacitance at 85° C. (pF) Further, the dielectric constant was determined from the following formula.
Ｋ＝ １４３．８ｘｃ ｏ Ｘ ｔ ／Ｄ”Ｋ ：誘電
率
Ｃｏ：２０°Ｃでの静電容量（ｐＦ ）Ｄ ：誘電体磁
器の直径 （閣）
ｔ ：誘電体磁器の厚み （ＩＩＩｌｌ）さらに、絶縁
抵抗は、横河・ヒユーレット・パノカード■製ＨＲメー
タのモデル４３２９Ａを使用し、測定電圧５０Ｖ、Ｄ、
Ｃ，、測定時間１分間による測定より求めた。K= 143.8xc o For the insulation resistance, we used a model 4329A HR meter manufactured by Yokogawa Huuret Pano Card ■, and the measurement voltage was 50V, D,
C. Determined by measurement with a measurement time of 1 minute.
そして、絶縁破壊強度は、菊水電子工業■製高電圧電源
ＰＨ３３５に一３形を使用し、試料をシリコンオイル中
に入れ、昇圧速度５０Ｖ／ｓｅｃにより求めた絶縁破壊
電圧を誘電体厚みで除算し、１閣当りの絶縁破壊強度と
した。The dielectric breakdown strength was determined by using a PH335 type 13 high voltage power supply made by Kikusui Electronics Co., Ltd., placing the sample in silicone oil, and dividing the dielectric breakdown voltage determined by a voltage increase rate of 50 V/sec by the dielectric thickness. , the dielectric breakdown strength per cabinet.
これらの試験条件を第１表に併せて示し、試験結果を下
記の第２表に示す。These test conditions are also shown in Table 1, and the test results are shown in Table 2 below.
なお、実施例における誘電体磁器の作製方法では、Ｔａ
ｚＯｓ、 ＬａｚＯｓ＋ Ｐｒ＊Ｏｚ＋ ＮｄｚＯｓ＋
Ｓ＋５ｚＯｓ、 Ｃｅ（ｌｚ。In addition, in the method for producing dielectric ceramic in the example, Ta
zOs, LazOs+ Pr*Oz+ NdzOs+
S+5zOs, Ce(lz.
ＧｄｚＯ：＋＋ ＤｙｚＯｓ、 ＴｉＯｘ、 ５ｒＣＯ
ｓおよびＢａＣＯ３を使用したが、この方法に限定され
るものではなく、所望の組成比になるように、ＢａＴｉ
Ｏ３などの化合物、あるいは炭酸塩、水酸化物など空気
中での加熱により、ＴａｚＯｓ＋ Ｌａ２Ｏ２，’ｒ６
０１１＋ Ｎｄ２Ｏ２，５ＩＩＪｓ＋ＣｅＯ２，Ｇｄｚ
Ｏ３＋ ”ｙ＊ｏｓ＋ Ｔ＋Ｏ１，ＳｒＯおよびＢａＯ
となる化合物を使用しても実施例と同程度の特性を得る
ことができる。GdzO: ++ DyzOs, TiOx, 5rCO
s and BaCO3 were used, but the method is not limited to this method, and BaTi
By heating compounds such as O3, carbonates, hydroxides, etc. in air, TazOs+ La2O2,'r6
011+ Nd2O2,5IIJs+CeO2,Gdz
O3+ “y*os+ T+O1, SrO and BaO
Even if a compound is used, properties comparable to those of the examples can be obtained.
また、主成分をあらかしめ仮焼し、副成分を添加しても
実施例と同程度の特性を得ることができる。Further, even if the main component is roughened and calcined and subcomponents are added, properties comparable to those of the examples can be obtained.
また、上述の基本組成のほかに、Ｓ＋Ｏ１，Ｍｎ０ｚ＋
’ｅｚＯｓ＋ ＺｎＯなど一般にフラックスと考えられ
ている塩類、酸化物などを、特性を損なわない範囲で加
えることもできる。In addition to the above basic composition, S+O1, Mn0z+
It is also possible to add salts, oxides, etc., which are generally considered to be fluxes, such as 'ezOs+ ZnO, within a range that does not impair the properties.
（以下余白）
発明の効果
以上のように本発明によれば、誘電率、絶縁抵抗、絶縁
破壊電圧が高く、Ｑを大幅に改善し、静電容量温度係数
が小さいため、製品の小型化、大容量化、特性向上が可
能である。(Left below) Effects of the Invention As described above, according to the present invention, the dielectric constant, insulation resistance, and dielectric breakdown voltage are high, Q is significantly improved, and the temperature coefficient of capacitance is small. It is possible to increase capacity and improve characteristics.
第１図は本発明にかかる組成物の主成分の組成範囲を説
明する三元図である。
代理人の氏名 弁理士 小鍜治 明 ほか２名第１図FIG. 1 is a ternary diagram illustrating the composition range of the main components of the composition according to the present invention. Name of agent: Patent attorney Akira Okaji and two others Figure 1
Claims (1)
−ｙＴｉＯ＿２−ｚ（Ｒｅ＿（＿ｌ＿−＿ｔ＿）Ｍｅ＿
ｔ）Ｏ＿３＿／＿２と表した時、（ただし、ｘ＋ｙ＋ｚ
＝１．００、０．０１≦ｈ≦０．３０、０．０１≦ｔ≦
０．２０、ＲｅはＬａ，Ｐｒ，Ｎｄ，Ｓｍから選ばれる
一種以上の希土類元素。ＭｅはＬａ，Ｐｒ，Ｎｄ，Ｓｍ
を除く希土類元素から選ばれる一種以上の希土類元素。 ）、ｘ，ｙ，ｚが以下に表す各点ａ，ｂ，ｃ，ｄ，ｅ，
ｆで囲まれるモル比の範囲からなる主成分１００重量部
に対し、副成分としてタンタル酸化物をＴａ＿２Ｏ＿５
の形に換算して０．１〜１０．０重量部含有したことを
特徴とする誘電体磁器組成物。[Claims] General formula x [(BaO)_(_l_-_h_)(SrO)_h]
-yTiO_2-z(Re_(_l_-_t_)Me_
t) When expressed as O_3_/_2, (however, x+y+z
=1.00, 0.01≦h≦0.30, 0.01≦t≦
0.20, Re is one or more rare earth elements selected from La, Pr, Nd, and Sm. Me is La, Pr, Nd, Sm
One or more rare earth elements selected from rare earth elements excluding . ), x, y, z are the points a, b, c, d, e,
Ta_2O_5 tantalum oxide as a subcomponent to 100 parts by weight of the main component having a molar ratio range surrounded by f.
A dielectric ceramic composition characterized in that it contains 0.1 to 10.0 parts by weight calculated as .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2292379A JPH04167306A (en) | 1990-10-29 | 1990-10-29 | Dielectric porcelain compound |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2292379A JPH04167306A (en) | 1990-10-29 | 1990-10-29 | Dielectric porcelain compound |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04167306A true JPH04167306A (en) | 1992-06-15 |
Family
ID=17781034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2292379A Pending JPH04167306A (en) | 1990-10-29 | 1990-10-29 | Dielectric porcelain compound |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04167306A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6429164B1 (en) * | 1999-10-28 | 2002-08-06 | Murata Manufacturing Co., Ltd. | High frequency dielectric ceramic composition, dielectric resonator, dielectric filter, dielectric duplexer, and communication system |
-
1990
- 1990-10-29 JP JP2292379A patent/JPH04167306A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6429164B1 (en) * | 1999-10-28 | 2002-08-06 | Murata Manufacturing Co., Ltd. | High frequency dielectric ceramic composition, dielectric resonator, dielectric filter, dielectric duplexer, and communication system |
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