JPH01266645A - Read only semiconductor storage device - Google Patents

Read only semiconductor storage device

Info

Publication number
JPH01266645A
JPH01266645A JP63095128A JP9512888A JPH01266645A JP H01266645 A JPH01266645 A JP H01266645A JP 63095128 A JP63095128 A JP 63095128A JP 9512888 A JP9512888 A JP 9512888A JP H01266645 A JPH01266645 A JP H01266645A
Authority
JP
Japan
Prior art keywords
address
password
data
value
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63095128A
Other languages
Japanese (ja)
Inventor
Shinji Sumi
伸二 炭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP63095128A priority Critical patent/JPH01266645A/en
Publication of JPH01266645A publication Critical patent/JPH01266645A/en
Pending legal-status Critical Current

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  • Read Only Memory (AREA)
  • Storage Device Security (AREA)

Abstract

PURPOSE:To execute the security protection of data by making it impossible to be read out by a third person who does not know a password by containing a semiconductor storage part for storing the password and an address converting part for executing an address conversion by its data value. CONSTITUTION:First of all, a password is inputted to a writable/readable semiconductor storage part 5 for storing the password. As for an address converting part 2, a barrel shifter circuit is used, and constituted so that when the password has been inputted, there is no shift quantity, and in case of other value, it is shifted by the quantity corresponding to its value. When a correct password is set to the storage part 5, an address of a read only semiconductor storage part 4 is selected correctly as it has corresponded to an address which has been designated from the outside, and correct data can be read out of an output buffer 6. When other value than the password is set to the storage part 5, an address signal is shifted by the converting part 2 by the quantity corresponding to its value and inputted to an address decoder 3, therefore, an erroneous address is designated, and erroneous data is outputted from the buffer 6.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、読み出し専用半導体記憶装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a read-only semiconductor memory device.

[従来の技術] 従来の読み出し専用半導体記憶装置の構成として代表的
なものを第2図に示す。該読み出し専用半導体記憶装置
に記憶されているデータの読み出し方法は、外部から1
のアドレスバッファにアドレス信号を入力することで、
このアドレス信号を2のアドレスデコーダでデコードし
、4の読み出し専用半導体記憶部の指定番地を選択する
こととにより、6の出力バッファよりデータを得ること
ができる。
[Prior Art] FIG. 2 shows a typical structure of a conventional read-only semiconductor memory device. The method for reading data stored in the read-only semiconductor memory device is as follows:
By inputting the address signal to the address buffer of
Data can be obtained from the output buffer 6 by decoding this address signal with the address decoder 2 and selecting a designated address in the read-only semiconductor memory section 4.

[発明が解決しようとする課題] 上記の従来の読み出し専用半導体記憶装置は、マイクロ
コンピュータを使用した装置において、マイクロコード
、プログラム等のソフトウェアを格納する装置として使
用される。また、最近カスタム化対応のLSIとして、
メモリチップ上に記録された回路機能定義データによっ
て内部の論理ブロックおよびI10ブロックの内部接続
が定義されるアーキテクチャのロジック・セル・アレイ
(LCA)が製品化されているが、この回路a能定義デ
ータの記憶にも用いられる。LCAを使ってハード・ウ
ェアを開発することは、メモリチップに記憶するデータ
、すなわちソフト・ウェアを開発するこに他ならない。
[Problems to be Solved by the Invention] The above-described conventional read-only semiconductor memory device is used as a device for storing software such as microcodes and programs in a device using a microcomputer. In addition, recently as LSIs that support customization,
A logic cell array (LCA) with an architecture in which the internal connections of internal logic blocks and I10 blocks are defined by circuit function definition data recorded on a memory chip has been commercialized. It is also used for memory. Developing hardware using LCA is nothing but developing data to be stored in memory chips, that is, software.

ハード・ウェアの価値はこのメモリチップ内のデータに
あるといえる。
It can be said that the value of hardware lies in the data within this memory chip.

ところが逆に、このメモリチップ内のデータを得ること
ができれば、容易に同じ機能のものを他に作ることが可
能である。しかし、前述の従来技術のメモリチップでは
、外部からアドレスを指定することで記憶されているデ
ータをそのまま読みだすことができるため、この装置で
内部に記憶されているソフトウェア等のデータのtel
密を保護することは不可能であり、容易に他者に同じ機
能のハード・ウェアを製作することを許してしまう。
On the other hand, if the data in this memory chip can be obtained, it is possible to easily create another device with the same functionality. However, in the memory chip of the prior art described above, the stored data can be read out as is by specifying an address from the outside, so this device can read data such as software stored internally by tel.
It is impossible to protect the information, and it is easy to allow others to create hardware with the same functionality.

そこで、本発明はこのような問題を解決するためのもの
であり、その目的とするところは、記憶されているデー
タが、第三者により読みだされることを困難とした読み
出し専用半導体記憶装置を提供することにある。
Therefore, the present invention is intended to solve such problems, and its purpose is to provide a read-only semiconductor memory device in which stored data is difficult to be read out by a third party. Our goal is to provide the following.

[課題を解決するための手段] 本発明の半導体記憶装置は、読み出し専用第一の半導体
記憶部と、書き込み並びに読み出し可能な第二の半導体
記憶部と、該第二の半導体記憶部に記憶された値によっ
て第一の半導体記憶部のアドレスを変換するアドレス変
換部を有することを特徴とする。
[Means for Solving the Problems] A semiconductor memory device of the present invention includes a read-only first semiconductor memory section, a writable and readable second semiconductor memory section, and a semiconductor memory device in which data is stored in the second semiconductor memory section. The present invention is characterized in that it has an address converting section that converts the address of the first semiconductor storage section according to the value obtained.

[作用] 本発明の上記の構成によれば、外部からのアドレス信号
はアドレスバッファに入力され、次にアドレス信号変換
部に人力される。アドレス信号変換部では、第二の書き
込み並びに読み出し可能な半導体記憶装置に記憶されて
いるデータ値により、アドレス信号は、それぞれ異なる
値に変換される。
[Operation] According to the above configuration of the present invention, an external address signal is input to the address buffer, and then manually input to the address signal converter. In the address signal converter, the address signals are converted into different values depending on the data values stored in the second writeable and readable semiconductor memory device.

ただし、第二の半導体記憶部に入力される値の組み合わ
せのうち、一つだけをアドレス信号の変換をしない回路
としておく。このときの第二の半導体記憶部に人力され
た値をパスワードとよぶこととすると、つまり、パスワ
ードが第二の半導体記憶部に入力されたときのみ第一の
半導体記憶部のアドレスが正しく指定され、従って正し
いデータが出力される。パスワード以外が第二の半導体
記憶部に入力された場合、第一の半導体記憶部は、その
値に応じてそれぞれ異なったアドレスの指定が行なわれ
、それぞれ異なった誤ったデータが出力される。
However, only one of the combinations of values input to the second semiconductor memory section is configured as a circuit that does not convert the address signal. If we call the value manually entered into the second semiconductor memory at this time a password, that is, the address of the first semiconductor memory will be correctly specified only when the password is input into the second semiconductor memory. , therefore correct data is output. If something other than a password is input to the second semiconductor memory section, different addresses are designated in the first semiconductor memory section depending on the value, and different erroneous data are output.

[実施例] 第1図は本発明の一実施例である。1はアドレスバッフ
ァ、2はアドレス変換部、3はアドレスデコーダ、4は
読み出し専用半導体記憶部、5はパスワード記憶用の書
き込み並びに読み出し可能な半導体記憶部、6は出力バ
ッファである。実施例において、該半導体記憶装置で読
み出し動作を実行するには、まず5の半導体記憶部にパ
スワードを入力する。アドレス変換部には、例えば、ア
ドレスバッファからのアドレス信号をパスワードの値だ
けシフトさせるバレルシフタ回路を用いることができる
。この場合、パスワードを入力した場合のみシフト量な
しとし、それ以外の値の場合、その値に対応した量だけ
シフトする回路とする。
[Example] FIG. 1 shows an example of the present invention. 1 is an address buffer, 2 is an address conversion section, 3 is an address decoder, 4 is a read-only semiconductor memory section, 5 is a writable and readable semiconductor memory section for storing passwords, and 6 is an output buffer. In the embodiment, in order to execute a read operation in the semiconductor memory device, a password is first input into the semiconductor memory section 5. For example, a barrel shifter circuit that shifts the address signal from the address buffer by the password value can be used as the address conversion section. In this case, the circuit is configured such that there is no shift amount only when a password is input, and for any other value, the shift is performed by an amount corresponding to that value.

5の半導体記憶部に正しいパスワードが設定されると、
4の読み出し専用半導体記憶部のアドレスは、外部から
指定したアドレスに対応したとおりに正しく選択され、
6の出力バッファから正しいデータを読み出すことがで
きる。パスワード以外の値が5に設定されると、アドレ
ス信号は、その値に対応した量だけ、2のアドレス変換
部でシフトされてアドレスデコーダに入力されるため、
それぞれ異なる誤ったアドレスが指定され、6の出力バ
ッファからは全く意味をなさない誤ったデータが出力さ
れることになる。このとき、正しいパスワードが設定さ
れた場合でも、誤ったパスワードが設定された場合でも
、いずれもなんらかのデータを出力するため、パスワー
ドを知らない第三者は、どのパスワードが入力された場
合が正しいデータであるのか判断することは非常に困難
であり、したがって本実施例で示した読み出し専用半導
体記憶装置に記憶されたデータの機密は保持される。
When the correct password is set in the semiconductor memory section 5,
The address of the read-only semiconductor memory section 4 is correctly selected according to the address specified from the outside,
Correct data can be read from the output buffer of No. 6. When a value other than the password is set to 5, the address signal is shifted by the amount corresponding to that value in the address converter 2 and input to the address decoder.
Different erroneous addresses are specified, and erroneous data that makes no sense at all is output from the output buffers of 6. At this time, regardless of whether a correct password is set or an incorrect password is set, some data is output, so a third party who does not know the password will be able to determine which password is entered as the correct data. It is very difficult to determine whether this is the case, and therefore the confidentiality of the data stored in the read-only semiconductor memory device shown in this embodiment is maintained.

[発明の効果] 以上説明したように本発明は、パスワード記憶用の半導
体記憶部とそれに記憶されてるデータの値によって読み
出し専用半導体記憶装置のアドレス値を変換するアドレ
ス変換部を内蔵させることにより、該半導体記憶装置に
記憶されたソフトウェア等のデータが、パスワードを入
力できない、すなわちパスワードを知らない第三者には
ほとんど正しく読みだすことが不可能となり、従って記
憶されたデータの機密保持ができるという効果が得られ
る。
[Effects of the Invention] As explained above, the present invention incorporates a semiconductor storage unit for storing passwords and an address conversion unit that converts the address value of a read-only semiconductor storage device according to the value of data stored therein. It is said that the data such as software stored in the semiconductor storage device cannot be read correctly by a third party who cannot input the password, that is, who does not know the password, and therefore the confidentiality of the stored data can be maintained. Effects can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の半導体記憶装置の一実施例を示す構成
図 第2図は従来の半導体記憶装置の構成図1・・・アドレ
スバッファ 2・・・アドレス変換部 3・・・アドレスデコーダ 4・・・読み出し専用半導体記憶部 5・・・パスワード記憶用半導体記憶部6・・・出力バ
ッファ 以  上 出願人 セイコーエプソン株式会社 代理人弁理士 上柳雅?(他1名) L口 第2 賦
FIG. 1 is a block diagram showing an embodiment of the semiconductor memory device of the present invention. FIG. 2 is a block diagram of a conventional semiconductor memory device. ...Read-only semiconductor memory section 5...Semiconductor memory section for password storage 6...Output buffer or higher Applicant: Seiko Epson Co., Ltd. Representative Patent Attorney Masaru Kamiyanagi? (1 other person) L account 2nd installment

Claims (1)

【特許請求の範囲】[Claims] 読み出し専用の第一の半導体記憶部と、書き込み並びに
読み出し可能な第二の半導体記憶部と、該第二の半導体
記憶部に記憶された値によって、第一の半導体記憶部の
アドレスを変換するアドレス変換部を有することを特徴
とする読み出し専用半導体記憶装置。
A read-only first semiconductor memory section, a writable and readable second semiconductor memory section, and an address for converting the address of the first semiconductor memory section according to the value stored in the second semiconductor memory section. A read-only semiconductor memory device characterized by having a conversion section.
JP63095128A 1988-04-18 1988-04-18 Read only semiconductor storage device Pending JPH01266645A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63095128A JPH01266645A (en) 1988-04-18 1988-04-18 Read only semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63095128A JPH01266645A (en) 1988-04-18 1988-04-18 Read only semiconductor storage device

Publications (1)

Publication Number Publication Date
JPH01266645A true JPH01266645A (en) 1989-10-24

Family

ID=14129186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63095128A Pending JPH01266645A (en) 1988-04-18 1988-04-18 Read only semiconductor storage device

Country Status (1)

Country Link
JP (1) JPH01266645A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7574576B2 (en) 2006-12-22 2009-08-11 Spansion Llc Semiconductor device and method of controlling the same
US20110289293A1 (en) * 2010-05-21 2011-11-24 Renesas Electronics Corporation Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7574576B2 (en) 2006-12-22 2009-08-11 Spansion Llc Semiconductor device and method of controlling the same
US20110289293A1 (en) * 2010-05-21 2011-11-24 Renesas Electronics Corporation Semiconductor device
US9111649B2 (en) * 2010-05-21 2015-08-18 Renesas Electronics Corporation Tamper resistant semiconductor device with access control

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