JPH01258215A - Magnetic memory medium and its production - Google Patents
Magnetic memory medium and its productionInfo
- Publication number
- JPH01258215A JPH01258215A JP4799088A JP4799088A JPH01258215A JP H01258215 A JPH01258215 A JP H01258215A JP 4799088 A JP4799088 A JP 4799088A JP 4799088 A JP4799088 A JP 4799088A JP H01258215 A JPH01258215 A JP H01258215A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- medium
- thin film
- isocyanate group
- magnetic memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 229920000570 polyether Polymers 0.000 claims abstract description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 10
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 150000004767 nitrides Chemical class 0.000 claims abstract description 8
- 150000001247 metal acetylides Chemical class 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 6
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 5
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 5
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 5
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 4
- 229910052735 hafnium Inorganic materials 0.000 claims abstract 3
- 239000010408 film Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims 1
- 229920000642 polymer Polymers 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 5
- 239000004721 Polyphenylene oxide Substances 0.000 abstract description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 3
- 150000002739 metals Chemical class 0.000 abstract 1
- 238000003860 storage Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 239000000314 lubricant Substances 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- AJDIZQLSFPQPEY-UHFFFAOYSA-N 1,1,2-Trichlorotrifluoroethane Chemical compound FC(F)(Cl)C(F)(Cl)Cl AJDIZQLSFPQPEY-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000714 At alloy Inorganic materials 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 241001417494 Sciaenidae Species 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 125000002993 cycloalkylene group Chemical group 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 229920001002 functional polymer Polymers 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 239000010687 lubricating oil Substances 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Landscapes
- Paints Or Removers (AREA)
- Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は磁気記録装置(磁気ディスク装置、磁気ドラム
装置及び磁気テープ装置)に用いられる磁気記憶体(以
下、記憶体と呼ぶ)及びその製造方法に関する。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a magnetic storage body (hereinafter referred to as a storage body) used in a magnetic recording device (magnetic disk device, magnetic drum device, and magnetic tape device) and its manufacture. Regarding the method.
金属磁性媒体(以下、金属媒体と呼ぶ)を有する記憶体
に於いては、記録再生ヘッド(以下、へラドと呼ぶ)と
の接触に耐えるだけの充分な機械的信頼性と水分、塩素
等の腐食環境に充分耐える耐食性が要求される。A storage body with a metal magnetic medium (hereinafter referred to as a metal medium) must have sufficient mechanical reliability to withstand contact with a recording/reproducing head (hereinafter referred to as a head) and must be free from moisture, chlorine, etc. Corrosion resistance that can withstand corrosive environments is required.
従来より基板はアルマイト処理やN1−Pメツキ等の非
磁性メツキ処理後、鏡面化やすし日付けのための研摩が
施こされたAt合金基板等が用いられ、次にN1−P、
N、1−Ou−P等の非磁性メツキやOr、Bi等の被
覆の有無の後、強磁性金属媒体を被覆し、更にSin、
(ポリケイ酸を含も)、A/、N 、0.81.N、と
*2,0.の固溶体等の保護膜が被覆され、更にパー7
0ロボリ工−テルに代表される液体潤滑剤や高級アルコ
ールや脂肪酸に代表される固体潤滑剤の薄層が被覆され
る。Conventionally, the substrate used is an At alloy substrate that has been subjected to a non-magnetic plating treatment such as alumite treatment or N1-P plating, and then polished for mirror polishing and marking, and then N1-P,
After non-magnetic plating such as N, 1-Ou-P and coating with Or, Bi, etc., a ferromagnetic metal medium is coated, and then Sin,
(including polysilicic acid), A/, N, 0.81. N, and *2,0. A protective film such as a solid solution of
A thin layer of a liquid lubricant such as 0-Robolyte or a solid lubricant such as higher alcohol or fatty acid is coated.
上記記憶体は一応の耐久性能を有し、既に市場に出回り
始めているものの大きな欠点を有している。Although the above-mentioned memory bodies have a certain level of durability and have already begun to appear on the market, they have major drawbacks.
上記記憶体を搭載したドライブを40℃80%R,Hの
環境下に放置すると記憶体1枚の1〜2ケ所に腐食点が
発生し、?イ7エクトエラーに至る。又記憶体とヘッド
との接触を繰り返すこ七により、両者間の摩擦係数が増
大し、スピンドルモーターがしばしば停止に至った。If a drive equipped with the above memory element is left in an environment of 40°C, 80% R, H, corrosion points will occur in one or two places on each memory element. It leads to i7 ect error. Furthermore, due to repeated contact between the storage body and the head, the coefficient of friction between the two increased, often causing the spindle motor to stop.
(発明が解決しようとする課題〕
掟米の技術では、金属媒体の耐食性を充分に確保できず
、又記憶体とヘッド間の機械的信頼性を充分に確保でき
ないという課題を有していた。(Problems to be Solved by the Invention) The conventional technology had the problem that it was not possible to sufficiently ensure the corrosion resistance of the metal medium, and that it was not possible to sufficiently ensure the mechanical reliability between the storage body and the head.
本発明は上記の課題を解決するものであり、その目的と
するところは、水分や塩素等の環境下に於ける金属媒体
の耐食性を飛躍的に向上させるとともに、記憶体とヘッ
ド間の摩擦係数を大幅に低減し、且つその効果を長期に
維持しうる信頼性に優れた記憶体を製造し提供するとこ
ろにある。The present invention solves the above problems, and its purpose is to dramatically improve the corrosion resistance of metal media in environments containing moisture and chlorine, and to improve the coefficient of friction between the storage body and the head. The purpose of the present invention is to manufacture and provide a highly reliable memory body that can significantly reduce the amount of water and maintain its effect for a long period of time.
本発明の記憶体及び製造方法は、基体上に金属媒体を形
成させし、該金属媒体上に酸化物、窒化物、炭化物及び
炭素から選ばれる少なくとも1種の物質より成る薄膜を
形成せしめそして該薄膜上に少なくともTi、Zr、H
f、Nb、Taの金属アルコラートの1種とイソシアネ
ート基を有するフッ化ポリエーテルI重合体を含′む混
合物を形成せしめた事を特徴とする。The storage body and manufacturing method of the present invention include forming a metal medium on a substrate, forming a thin film made of at least one substance selected from oxides, nitrides, carbides, and carbon on the metal medium; At least Ti, Zr, H on the thin film
The present invention is characterized in that a mixture containing one of metal alcoholates of f, Nb, and Ta and a fluorinated polyether I polymer having an isocyanate group is formed.
金属媒体は従来技術と同様の材料、製法によって形成す
る。The metal medium is formed using the same materials and manufacturing methods as in the prior art.
酸化物、窒化物、炭化物は、kt、 B 、 Y 。Oxides, nitrides, and carbides are kt, B, and Y.
Si、Ti、Zr、l1ifn、、1fb、Ta、Or
。Si, Ti, Zr, l1ifn, 1fb, Ta, Or
.
MO,Wから選ばれる元素との化合物であり、その混合
層、積層は任意である。炭素はグラファイト、ダイヤモ
ンド、アモルファスの牟独、混合。It is a compound with an element selected from MO and W, and the mixed layer and lamination thereof are arbitrary. Carbon is a mixture of graphite, diamond, and amorphous.
積層であり、いずれも100〜500Xの膜厚が適切で
ある。上記化合物及び炭素はスパッタリング法、イオン
ブレーティング法等のPvD法やOVD法で形成可能で
あり、酸化物は有機金属化合物の塗布、焼成によっても
得られる。They are laminated, and a film thickness of 100 to 500X is appropriate for both. The above compound and carbon can be formed by a PvD method or an OVD method such as a sputtering method or an ion blating method, and an oxide can also be obtained by coating and baking an organometallic compound.
次に金属アルコラートは、Ti(0(+4H,)4゜Z
r (oo4a、 )4 tTlf (OO+IIIe
)a eMb*(00617)s e Tag (
OOtH3)s等であり、又イソシアネート基を有する
フッ化ポリエーテル重合体は、
0ON−R’ −Rf−R’ −Woo 、 OH,
−R’ −Rf−R−MOO
R′;アルキレン、シクロアルキレン、アロマティック
グループ
Rf = −01!、 −0−(0,1F、O)?&−
(ay、o)m −701P!−
a、sは、10以上の整数である。Next, the metal alcoholate is Ti(0(+4H,)4゜Z
r (oo4a, )4 tTlf (OO+IIIe
)a eMb*(00617)s e Tag (
0ON-R'-Rf-R' -Woo, OH,
-R' -Rf-R-MOO R'; alkylene, cycloalkylene, aromatic group Rf = -01! , -0-(0,1F,O)? &−
(ay,o)m-701P! - a and s are integers of 10 or more.
上式で表わされる重合体等である。金属アルコラート及
びフッ化ポ゛リエーテル重合体は可溶性溶媒に希釈され
、スプレー法、スピンナー法、ディッピング法や超音波
による噴霧吹き付は法等の既知の製法で塗布され、必要
に応じ焼成する。溶媒はへpゲン化炭化水素系を用い、
得たい膜厚に応じ濃度が決定される。焼成は、絶対条件
ではないが50〜150℃で1分−20分で充分であり
、30〜2001の膜厚が適切である。These include polymers represented by the above formula. The metal alcoholate and the fluorinated polyether polymer are diluted in a soluble solvent, applied by a known manufacturing method such as a spray method, a spinner method, a dipping method, or an ultrasonic atomization method, and baked if necessary. The solvent used was a hepgenated hydrocarbon system,
The concentration is determined depending on the desired film thickness. Although it is not an absolute condition for baking, 1 to 20 minutes at 50 to 150°C is sufficient, and a film thickness of 30 to 200 mm is appropriate.
尚、金属アルコラートは、全官能型以外の適用も可能で
あり、又フッ化ポリエーテル重合体も、イソシアネート
基以外の官能基を有する重合体、例えば7オンブリンZ
−D K A II 、 Z −D OL 。It should be noted that the metal alcoholate can be applied to a type other than the fully functional type, and the fluorinated polyether polymer can also be used as a polymer having a functional group other than the isocyanate group, such as 7 Ombrine Z.
-DK A II, Z -DOL.
Z−D工AOや無官能の重合体、例えば同Z−AM−s
eriesとの併用適用も可能である。(7オンプリン
はモンテジソン社製品)
又、金属アルコラートと7フ化ポリエーテル重合体の混
合割合は、前者の官能基数をO1分子数をPそして後者
の官能基数をQ1分子数をRとした場合、
1以下の場合、初期よりヘッドと記憶体間の摩擦性能が
劣り、10以上の場合、初期の摩擦性能は優れるものの
、長期に亘り、摩擦性能が維持されなくなる。Z-D AO and non-functional polymers, such as Z-AM-s
It is also possible to apply it in combination with eries. (7Onpurine is a product of Montegisson) Also, the mixing ratio of the metal alcoholate and the heptafluorinated polyether polymer is as follows, where the number of functional groups in the former is O1, the number of molecules is P, the number of functional groups in the latter is Q1, and the number of molecules is R. When it is less than 1, the friction performance between the head and the storage body is inferior to the initial state, and when it is 10 or more, although the initial friction performance is excellent, the friction performance is not maintained over a long period of time.
本発明によれば、金属媒体に、硬度、緻密性に優れる酸
化物、窒化物、炭化物及び炭素から選ばれる少なくとも
1種の物質より成る薄膜を形成することにより、ヘッド
の衝撃摩耗からそして環境中の水分や塩素等から金属媒
体を保護する。According to the present invention, by forming a thin film made of at least one substance selected from oxides, nitrides, carbides, and carbon, which has excellent hardness and density, on a metal medium, it is possible to protect the head from impact abrasion and reduce environmental pollution. Protects metal media from moisture, chlorine, etc.
しかし、上記薄膜は、数100X前後と薄く、ピンホー
ルレスにすることは困難である。又上記薄膜のうち炭素
以外は潤滑性に乏しく、最も優れる炭素膜に於いても、
潤滑性が不充分なため、各種の潤滑剤を薄膜上に積層化
せしめるのが一般的であった。しかしながら、上記の薄
膜と潤滑剤との固着力が弱いため、長期間に及ぶヘッド
と記憶体の接触摩耗により、潤滑剤が徐々に記憶体上か
ら除去され、初期の優れた潤滑効果が失なわれてしまっ
た。However, the above-mentioned thin film is thin, around several hundred times, and it is difficult to make it pinhole-free. Also, among the above thin films, materials other than carbon have poor lubricity, and even the most excellent carbon film has
Because of the insufficient lubricity, it has been common practice to layer various lubricants on a thin film. However, because the adhesion between the thin film and the lubricant is weak, the lubricant is gradually removed from the memory element due to contact wear between the head and the memory element over a long period of time, causing the initial excellent lubrication effect to be lost. I got lost.
本発明では、上記薄膜上に、イソシアネート基を有する
フッ化ポリエーテル重合体と金属アルフラートを少なく
とも含む混合物を被覆、せしめるものである。金属アル
コラートは、酸化物、窒化物、炭化物及び炭素の最表面
の活性基(−OH。In the present invention, the thin film is coated with a mixture containing at least a fluorinated polyether polymer having an isocyanate group and a metal alflate. Metal alcoholates are active groups (-OH) on the outermost surface of oxides, nitrides, carbides, and carbon.
−0OOH+と、そしてフッ化ポリエーテル重合体のイ
ソシアネート基と化学反応し、記憶体上に潤滑膜を固定
化しヘッドの衝撃摩耗により除去される事を防ぐ作用が
ある。It chemically reacts with -0OOH+ and the isocyanate group of the fluorinated polyether polymer, and has the effect of fixing a lubricating film on the memory medium and preventing it from being removed by impact wear of the head.
又7)化ポリエーテル重合体は優れた撥水性を示し、防
錆作用を高める効果があり、上記の理由により、その効
果は長期間に亘り維持される。In addition, the polyether polymer (7) exhibits excellent water repellency and has the effect of enhancing rust prevention, and for the above-mentioned reasons, this effect is maintained for a long period of time.
以上により長期機械的信頼性及び保存信頼性に優れた記
憶体の製造、提供が可能になった。As a result of the above, it has become possible to manufacture and provide a memory body with excellent long-term mechanical reliability and storage reliability.
鏡面仕上げされたディスク状アルミニウム合金基板上に
非磁性N1−P合金メツキを約15μm厚に施こした後
、研摩により表面粗度α02μm以下に表面加工し、更
にOo −N i −P合金メツキを約CL05μ講厚
に施こした。After applying non-magnetic N1-P alloy plating to a thickness of about 15 μm on a mirror-finished disk-shaped aluminum alloy substrate, the surface was polished to a surface roughness of α02 μm or less, and then Oo-Ni-P alloy plating was applied. It was applied to a thickness of approximately CL05μ.
次にマグネトロンスパッタ装置に上記基板をセットし、
5X10−’torr以下まで排気した後、基板を80
℃まで加熱し、吸着水分の除去後、人rガスを導入し、
5X10=torrにした後、!!1表に示した材料を
ターゲットとして、パワー密度4W/−で成膜した。Next, set the above substrate in a magnetron sputtering device,
After evacuation to below 5X10-'torr, the board was
After heating to ℃ and removing adsorbed moisture, human gas is introduced,
After setting 5X10=torr! ! Films were formed using the materials shown in Table 1 as targets at a power density of 4 W/-.
次に同じく第1表に示す金属アルコラートとフッ化ポリ
エーテル重合体の混合物をフロン113にα20 W
/ 7%の濃度で溶解し、ディッピング法(10eM/
i)で塗布し、その後、110℃で10分間焼成した。Next, a mixture of metal alcoholate and fluorinated polyether polymer shown in Table 1 was added to Freon 113 using α20 W.
/7% concentration and dipping method (10eM/7%).
i), and then baked at 110° C. for 10 minutes.
第 1 表
上記の製造方法により得られた記憶体を下記試験で評価
した。結果は第2表に示す。Table 1 The memory bodies obtained by the above manufacturing method were evaluated in the following tests. The results are shown in Table 2.
(aSS耐久試験)
aSS動作前後の外観変化、静摩擦係数と出力低下率を
求める。(使用ヘッド:薄膜3370タイプ、7ライハ
イト 115μm911L/rx、時)(耐食性試験)
85υ 80%R,H,の環境下放置に於いて、放置時
間の経過をおい、ミッシングピット数を測定し、その増
加が認められた時点で寿命と判断した。(aSS durability test) Determine the appearance change, static friction coefficient, and output reduction rate before and after aSS operation. (Head used: Thin film 3370 type, 7 lightite, 115μm, 911L/rx, hour) (Corrosion resistance test) When left in an environment of 85υ 80% R, H, the number of missing pits was measured after the standing time had elapsed, and the number of missing pits was measured. When an increase was observed, the lifespan was judged to have come to an end.
第 2 表
〔発明の効果〕
高記録密度対応の記憶体として薄膜型記憶体が登場して
久しいが、長期信頼性に対する不安からその使用は一部
に限られていた。Table 2 [Effects of the Invention] Thin-film memory bodies have been around for a long time as memory bodies compatible with high recording densities, but their use has been limited to some areas due to concerns about long-term reliability.
木兄aAKよれば、加温湿下で記憶体が用いられても金
属媒体は実用的に何等の影響を受けず、又増々硬質化、
低フライハイド化するヘッドを用いての機械的信頼性が
高いので、更に小型化し、厳しい環境下で用いられるド
ライブ体に搭載されても、記憶体、ヘッドはとも°に特
性劣化は、はとんど認められない。According to Kinei aAK, even if the memory medium is used under heated and humid conditions, the metal medium will not be affected in any way in practical terms, and will become increasingly hard.
Since the mechanical reliability of the low-fly-hide head is high, even if it is further miniaturized and installed in a drive body used in harsh environments, the characteristics of both the memory body and the head will not deteriorate significantly. I can't admit it.
以上の如く、高記録密度対応の高耐久性記憶体の製造、
提供が可能になりた。As described above, manufacturing of highly durable memory bodies compatible with high recording density,
Now available.
以上 出願人 七イフーエプソン株式会社 代理人 弁理士最上務(他1名)that's all Applicant: Seven Ifu Epson Corporation Agent Mogami Patent Attorney (1 other person)
Claims (3)
媒体上に酸化物、窒化物、炭化物及び炭素から選ばれる
少なくとも1種の物質より成る薄膜が被覆され、次に該
薄膜上に少なくともTi、Zr、Hf、Nb、Taの金
属アルコラートの1種と、イソシアネート基を有するフ
ッ化ポリエーテル重合体を含む混合物を被覆せしめた事
を特徴とする磁気記憶体。(1) A metal magnetic medium is coated on a substrate, a thin film made of at least one substance selected from oxide, nitride, carbide, and carbon is coated on the metal magnetic medium, and then at least A magnetic memory material coated with a mixture containing one of metal alcoholates of Ti, Zr, Hf, Nb, and Ta and a fluorinated polyether polymer having an isocyanate group.
該金属媒体上に、酸化物、窒化物、炭化物及び炭素から
選ばれる少なくとも1種の物質より成る薄膜を形成させ
る工程そして該薄膜上に少なくともTi、Zr、Hf、
Nb、Taの金属アルコラートの1種とイソシアネート
基を有するフッ化ポリエーテル重合体を含む混合物の被
膜を形成させる工程によることを特徴とする磁気記憶体
の製造方法。(2) forming a film of metal magnetic medium on the substrate;
forming a thin film made of at least one substance selected from oxides, nitrides, carbides, and carbon on the metal medium;
A method for manufacturing a magnetic memory, comprising the step of forming a film of a mixture containing one of metal alcoholates of Nb and Ta and a fluorinated polyether polymer having an isocyanate group.
アルコラートの1種とイソシアネート基を有するフッ化
ポリエーテル重合体を含む混合物を塗布する工程とその
後焼成する工程により被膜を形成させることを特徴とす
る第1項記載の磁気記憶体の製造方法。(3) A film is formed by applying a mixture containing at least one metal alcoholate of Ti, Zr, Hf, Nb, or Ta and a fluorinated polyether polymer having an isocyanate group, and then firing the mixture. 2. The method for manufacturing a magnetic memory body according to claim 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4799088A JPH01258215A (en) | 1988-03-01 | 1988-03-01 | Magnetic memory medium and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4799088A JPH01258215A (en) | 1988-03-01 | 1988-03-01 | Magnetic memory medium and its production |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01258215A true JPH01258215A (en) | 1989-10-16 |
Family
ID=12790759
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4799088A Pending JPH01258215A (en) | 1988-03-01 | 1988-03-01 | Magnetic memory medium and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01258215A (en) |
-
1988
- 1988-03-01 JP JP4799088A patent/JPH01258215A/en active Pending
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