JPH01277319A - Magnetic memory body and production thereof and magnetic memory device - Google Patents

Abstract

PURPOSE:To obtain the memory body having excellent long-term mechanical reliability and preservation reliability by covering a thin film consisting of 1 kinds of materials selected from an oxide, nitride, carbide, and carbon formed on a metallic medium with a polyether fluoride polymer having an amino group. CONSTITUTION:The thin film consisting of at least 1 kinds of the materials selected from the oxide, nitride, carbide, and carbon is formed on the magnetic metallic medium. This thin film is coated with the polyether fluoride polymer having the amino group at the terminal of the molecule. The corrosion resistance of the metallic medium in environment of moisture and chlorine, etc., is thereby greatly improved and the coefft. of friction between the memory body and the head is greatly decreased; in addition, the memory body which can maintain such effect over a long period of time and has the excellent reliability is obtd.

Description

Detailed Description of the Invention [Field of Industrial Application] The present invention relates to magnetic storage devices (magnetic disk devices, magnetic drum devices, and magnetic tape devices) and magnetic storage bodies (hereinafter referred to as storage bodies) used in the magnetic storage devices. ) and its manufacturing method.

[Conventional technology]

A storage body with a metal magnetic medium (hereinafter referred to as a metal medium) must have sufficient mechanical reliability to withstand contact with a recording/reproducing head (hereinafter referred to as a head) and must be free from moisture, chlorine, etc. Corrosion resistance that can withstand food environments is required.

Conventionally, the substrate used is an Aj alloy substrate, which has been subjected to alumite treatment or non-magnetic plating treatment such as N1-P plating, and then polished for mirror polishing or marking.
After non-magnetic plating such as N1-Cu-P and coating with Cr, Bi, etc., a ferromagnetic metal medium is coated, and then 5102
(including polysilicic acid), AjN, C, Si3 Na and A
A protective film such as a solid solution of JI and O is coated, and a thin layer of a liquid lubricant typified by perfluoropolyether or a solid lubricant typified by higher alcohol or fatty acid is further coated.

Although the above-mentioned memory bodies have a certain level of durability and have already begun to appear on the market, they have major drawbacks.

A magnetic storage device equipped with the above storage body was heated at 40℃80%R.
If left in an environment of H., galling points will occur in one or two places on one memory body, leading to a defect error. Furthermore, repeated contact between the storage body and the head increased the coefficient of friction between them, often causing the spindle motor to stop.

[Problem to be solved by the invention]

Conventional techniques have had the problem of not being able to ensure sufficient corrosion resistance of the metal medium, and not being able to ensure sufficient mechanical reliability between the storage body and the head.

The present invention solves the above problems, and its purpose is to dramatically improve the corrosion resistance of metal media in environments containing moisture and chlorine, and to improve the coefficient of friction between the storage body and the head. It is an object of the present invention to manufacture and provide a highly reliable memory body that can significantly reduce the amount of water and maintain its effect for a long period of time, and to provide a magnetic memory device using the memory body.

[Means to solve the problem]

The present invention involves forming a metal medium on a substrate, forming a thin film made of at least one substance selected from oxides, nitrides, carbides, and carbon on the metal medium, and then forming a thin film containing a hydrolyzable group. SL, Tt, Zr, Hf, Nb, Ta
organometallic compounds, or Si, Ti, which have a hydrolyzable group at one end of the molecule and a glycidyl group at the other end.
, Zr, Hf, Nb, Ta, or a mixture of the above-mentioned organometallic compounds, after forming a cured film, a fluorinated polyether polymer having at least an amyl group at the end is formed. The characteristic special metal medium is formed using the same materials and manufacturing methods as in the prior art.

Oxides, nitrides, carbides include AI, B, Y, Si, 'r
It is a compound with an element selected from i, Zr, Hf, Nb, Ta, Cr, Mo, and W, and the mixed layer and lamination thereof are arbitrary. Carbon can be graphite, diamond, or amorphous, either alone, mixed, or laminated, all of which have a carbon content of 100 to 500.
The thickness of the person's skin is appropriate.

The above compound and carbon can be formed by a PVD method or a CVD method such as a sputtering method or an ion blating method,
Oxides can also be obtained by coating and firing an organometallic compound.

The organometallic compound having a hydrolyzable group is 5t(OH)
a, Si (OCHs) a, Ti (OCaH9
)a, Zr (OC4Hs)4, Hf (OCa
H@)4, Nb2 <QCs Hy)s, Ta
2 (OC2H5)S, etc., and an organometallic compound having a hydrolyzable group at one end of the molecule and a glycidyl group at the other end, where M is Si, Ti, Zr, Hf, Nb or Ta. , R is an alkyl group having 1 to 4 carbon atoms or hydrogen, and X is the valence of the metal element M.

represented by. The above-mentioned organometallic compounds may be used alone or in combination, and in particular, in the case of silicon compounds, they may be used with or without the addition of a weak acid aqueous solution, diluted with a soluble solvent such as alcohol, and then subjected to a spray method, a spinner method, a dipping method, or an ultrasonic atomization method. The coating is applied by a known manufacturing method such as the method, and baked if necessary. The ratio of solvent dilution is appropriately determined depending on the desired film thickness. Further, baking at 50 to 200° C. for 1 to 30 minutes is sufficient, and the appropriate film thickness is from the monomolecular layer level to 100 Å.

Fluorinated polyether polymer with amino groups is H2N
R' Rf R' NH2CHs R'
Rf -R' N H2, where R' is alkylene, cycloalkylene, aromatic group, and
These include amino group or 1 and imino group-containing alkylene, cycloalkylene, aromatic group, etc.

Also, Rf is -CFI-0-(C2FtO)11-(CFI
O) l-CFt- or CF.

are -CF, -0-(CF-CF, -0h-(CF, O
) 1-CF, -, where n and m represent integers of 10 or more.

These are polymers represented by: The above-mentioned fluorinated polyether polymers may be used alone or in combination, and may also contain other polar groups (
-OH group, -COOCHs group, -C00H group, -NCO
fluorinated polyether polymers having non-polar groups (
7 Ombrin Z-25, Ombrin Z-AM2001, etc. (Fonpurin is manufactured by Montefluos Co., Ltd.) is mixed with a heptadated polyester polymer, diluted in a soluble solvent such as Freon 113, and then sprayed. Apply using known manufacturing methods such as the spinner method, dipping method, and ultrasonic spraying method.
Bake if necessary.

The ratio of solvent dilution is appropriately determined depending on the desired film thickness.

Also, baking at 50 to 150°C for 1 to 20 minutes is sufficient.
The appropriate film thickness is 20 to 150 people.

[For production]

According to the present invention, by forming a film thickness of at least one substance selected from oxides, nitrides, carbides, and carbon that is excellent in hardness and density on the metal medium, it is possible to prevent the impact and abrasion of the head. Protects metal media from moisture, chlorine, etc. in the environment.

However, the above-mentioned thin film is thin, about several hundred layers, and it is difficult to make it pinhole-free. Also, among the above thin films, materials other than carbon have poor lubricity, and even the most excellent carbon film has
Due to insufficient lubricity, it has been common practice to layer various lubricants on a thin film. However, because the adhesion between the thin film and the lubricant is weak, the lubricant is gradually removed from the memory element due to contact wear between the head and the memory element over a long period of time, and the initial excellent lubrication effect is lost. It happened.

In the present invention, the thin film is coated with a fluorinated polyether polymer having at least an amino group. Amino groups have a strong affinity with the active group (-OH1-C00H) on the outermost surface of oxides, nitrides, carbides, and carbon, and are strongly fixed on the memory body and removed from the memory body by impact abrasion of the head. It has the effect of preventing

Furthermore, after forming a cured film of an organometallic compound having a hydrolyzable group or a hydrolyzable group and a glycidyl group on the thin film made of at least one substance selected from oxides, nitrides, carbides, and carbon, at least an amino acid It is coated with a fluorinated polyether polymer having groups. The hydrolyzable group chemically bonds with the active group on the outermost surface of the thin film and firmly adheres to it, and the same goes for the glycidyl group, but due to the chemical bond with the amino group, the fluorinated polyether polymer becomes a memory material. It is more strongly fixed on the top of the memory body to prevent it from being removed from the top of the memory body due to impact wear of the head.

In addition, the fluorinated polyether polymer exhibits excellent potability and has the effect of enhancing the rust prevention effect, and for the above-mentioned reasons, this effect is maintained for a long period of time.

As described above, it has become possible to manufacture and provide a memory body with excellent long-term mechanical reliability and storage reliability, and furthermore, by using this memory body, the reliability of a magnetic memory device has been significantly improved.

〔Example〕

After applying non-magnetic N1-P alloy plating to a thickness of about 15 μm on a mirror-finished disk-shaped aluminum alloy substrate, polishing it to a surface roughness of Ra = 70 to 120A, Rmex
= 700 to 1500A, the surface weight is processed, and further C
o-N1-P alloy plating was applied to a thickness of about 0.05 μm.

Next, set the above substrate in a magnetron sputtering device,
After evacuation to below 5X10-'torr, the board was
After heating to ℃ and removing adsorbed water, Ar gas was introduced,
After setting the pressure to 5×10 −′ torr, film formation was performed using the materials shown in Table 1 as targets at a power density of 4 W/aa.

Next, the organometallic compound shown in Table 1 was added to methanol and Freon 113 (mixing ratio 1:3 by volume) at 0.005w/
Dissolve at a concentration of vχ and dipping method (10cm/1l)
in) and then baked at 110° C. for 10 minutes.

Next, the fluorinated polyether polymer shown in Table 1 was dissolved in Freon 113 at a concentration of 0.2 w/v%, and applied by dipping (10 cm/1 ain).
Bake at 10°C for 10 minutes.

1st Table A-1: H,NR'-Rf-R'NH,R' is alkylene molecular weight 1ifJ200OA-2: CH,-R
'-Rf-R''-NH, R' is alkylene molecular weight is approximately 2000B-2: CHs-R'-Rf-R'-C-
NHI R' is alkylene molecular weight is 3000 Rf
-CF20(C2F a O)-1(CFO
), -CF2-.

A memory body manufactured by the above manufacturing method and a 3370 type thin film head (fly bite 0.15 μm, 91/se
A magnetic storage device was fabricated using (c) and evaluated by the following tests. The results are shown in Table 2.

(1) C3S durability test C8S operation (rise and fall time 10SeC)
Determine the change in appearance before and after, the coefficient of static friction, and the rate of decrease in output.

(2) Corrosion resistance test The product was left in an environment of 80°C and 90% R, H, and after the time had passed, the number of mixing pits was measured, and the time when the number of mixing pits increased was determined to be the end of its service life. .

Table 2 [Effects of the invention] Magnetic storage devices using thin-film storage as a storage medium compatible with high recording densities have been on the market for some time, but their use has been limited to some due to concerns about long-term reliability. .

According to the present invention, even if a storage medium is used under heated floating conditions, the metal medium will not be affected in any way in practical terms, and the mechanical reliability will be improved even when using heads that are becoming increasingly hard and have low fly-hide. Because of the high resistance, even if the magnetic storage device is further miniaturized and installed in a magnetic storage device used in harsh environments, no deterioration in the characteristics of either the storage body or the head will be observed.

As described above, manufacturing of highly durable memory bodies compatible with high recording density,
By providing and using the storage body, it has become possible to provide a highly reliable magnetic storage device.

that's all Applicant: Seiko Epson Corporation

Claims (12)

[Claims] (1) A metal magnetic medium is coated on a substrate, a thin film made of at least one substance selected from oxides, nitrides, carbides, and carbon is coated on the metal magnetic medium, and then at least the terminal ends of molecules are coated. 1. A magnetic memory comprising a fluorinated polyether polymer having an amino group. (2) A hydrolyzable group is provided between a thin film made of at least one substance selected from oxides, nitrides, carbides, and carbon and a coating of a fluorinated polyether polymer having at least an amino group at the end of the molecule. Si, Ti, Zr, Hf
2. The magnetic memory according to claim 1, further comprising a cured film of at least one of organometallic compounds of , Nb, and Ta. (3) Between a thin film made of at least one substance selected from oxides, nitrides, carbides, and carbon and a coating of a fluorinated polyether polymer having at least an amino group at the end of the molecule, one of the molecules is Si, Ti, Zr, Hf, N having a hydrolyzable group at one end and a glycidyl group at the other end
2. The magnetic memory according to claim 1, further comprising a cured film of at least one organometallic compound of Ta. (4) between a thin film made of at least one substance selected from oxides, nitrides, carbides, and carbon and a coating of a fluorinated polyether polymer having at least an amino group at the end of the molecule; 4. The magnetic memory according to claim 1, wherein a cured film is formed of a mixture of the organometallic compound and the organometallic compound according to claim 3. (5) forming a film of metal magnetic medium on the substrate;
A step of forming a thin film made of at least one substance selected from oxides, nitrides, carbides, and carbon on a metal magnetic medium, and adding a fluorinated polyether polymer having an amino group at least at the end of the molecule on the thin film. A method for producing a magnetic memory, characterized by a step of forming a coalescing film. (6) A step of forming a cured film of the organometallic compound according to item 2 between the step of forming the thin film and the step of forming the film of the fluorinated polyether polymer. The method for manufacturing a magnetic memory body according to claim 5. (7) A step of forming a cured film of the organometallic compound according to item 3 between the step of forming the thin film and the step of forming the film of the fluorinated polyether polymer. The method for manufacturing a magnetic memory body according to claim 5. (8) A step of forming a cured film of the organometallic compound according to item 4 between the step of forming the thin film and the step of forming the film of the fluorinated polyether polymer. The method for manufacturing a magnetic memory body according to claim 5. (9) A magnetic storage device characterized by using the magnetic storage body according to claim 1. (10) A magnetic storage device characterized by using the magnetic storage body according to claim 2. (11) A magnetic storage device characterized by using the magnetic storage body according to claim 3. (12) A magnetic storage device characterized by using the magnetic storage body according to claim 4.