JPH0279211A - Magnetic recording body, its production, and magnetic memory - Google Patents
Magnetic recording body, its production, and magnetic memoryInfo
- Publication number
- JPH0279211A JPH0279211A JP23196388A JP23196388A JPH0279211A JP H0279211 A JPH0279211 A JP H0279211A JP 23196388 A JP23196388 A JP 23196388A JP 23196388 A JP23196388 A JP 23196388A JP H0279211 A JPH0279211 A JP H0279211A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- magnetic
- coated
- magnetic storage
- organic compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010409 thin film Substances 0.000 claims abstract description 37
- 238000003860 storage Methods 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 235000014113 dietary fatty acids Nutrition 0.000 claims abstract description 15
- 229930195729 fatty acid Natural products 0.000 claims abstract description 15
- 239000000194 fatty acid Substances 0.000 claims abstract description 15
- 150000004665 fatty acids Chemical class 0.000 claims abstract description 15
- 150000003839 salts Chemical class 0.000 claims abstract description 13
- 229920000570 polyether Polymers 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 229910052799 carbon Inorganic materials 0.000 claims description 13
- 150000004767 nitrides Chemical class 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- 125000000524 functional group Chemical group 0.000 claims description 9
- 150000002894 organic compounds Chemical class 0.000 claims description 8
- 239000007822 coupling agent Substances 0.000 claims description 7
- 150000001247 metal acetylides Chemical class 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 abstract description 7
- 238000005260 corrosion Methods 0.000 abstract description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000460 chlorine Substances 0.000 abstract description 4
- 229910052801 chlorine Inorganic materials 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 238000007598 dipping method Methods 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000314 lubricant Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000002902 organometallic compounds Chemical class 0.000 description 3
- 238000006068 polycondensation reaction Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- AJDIZQLSFPQPEY-UHFFFAOYSA-N 1,1,2-Trichlorotrifluoroethane Chemical compound FC(F)(Cl)C(F)(Cl)Cl AJDIZQLSFPQPEY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910001096 P alloy Inorganic materials 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 125000001841 imino group Chemical group [H]N=* 0.000 description 2
- 239000010687 lubricating oil Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 239000010702 perfluoropolyether Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- CYRMSUTZVYGINF-UHFFFAOYSA-N trichlorofluoromethane Chemical compound FC(Cl)(Cl)Cl CYRMSUTZVYGINF-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910017888 Cu—P Inorganic materials 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は磁気記憶装ra(磁気ディスク装置、磁気ドラ
ム装置及び磁気テープ装置及び該磁気記憶装置)に用い
られる磁気記憶体(以下、記憶体と呼ぶ)及びその製造
方法に関する。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a magnetic storage body (hereinafter referred to as a storage body) used in a magnetic storage device RA (magnetic disk device, magnetic drum device, magnetic tape device, and magnetic storage device). ) and its manufacturing method.
磁性薄膜を有する記憶体に於いては、記録再生ヘッド(
以下、ヘッドと呼ぶ)との接触に耐えるだけの充分な機
械的信頼性と水分、塩素等の力負環境に充分耐える耐食
性が要求される。In a storage body having a magnetic thin film, a recording/reproducing head (
It is required to have sufficient mechanical reliability to withstand contact with the head (hereinafter referred to as head) and corrosion resistance sufficient to withstand force-bearing environments such as moisture and chlorine.
従来より基板はアルマイト処理やN1−Pメツキ等の非
磁性メツキ処理後、鏡面化やすし目付けのための研磨が
施こされたA1合金基板、ガラス板やセラミック板等が
用いられ、次にN i −P。Conventionally, the substrates used are A1 alloy substrates, glass plates, ceramic plates, etc., which have been subjected to non-magnetic plating treatment such as alumite treatment and N1-P plating, and then polished to make them mirror-finished and have a surface density.Next, Ni -P.
N1−Cu−P等の非磁性メツキやCr、Bi等の被覆
の有無の債、磁性薄膜を被覆し、更に5i02(ポリケ
イ酸を含む)、AIN、C,5isN4とA l 20
3の固溶体等の保護膜が被覆され、カップリング剤を用
いた中間層の有無の後パーフロロポリエーテルに代表さ
れる液体潤滑剤や高級アルコールや脂肪酸に代表される
固体潤滑剤の薄層が被覆される。Non-magnetic plating such as N1-Cu-P, coating with Cr, Bi, etc., coating with magnetic thin film, and further 5i02 (including polysilicic acid), AIN, C, 5isN4 and Al 20
A protective film such as a solid solution of step 3 is coated, and a thin layer of a liquid lubricant represented by perfluoropolyether or a solid lubricant represented by higher alcohol or fatty acid is coated with or without an intermediate layer using a coupling agent. coated.
上記記憶体は一応の耐久性能を有し、既に市場に出回り
始めているものの大きな欠点を有している。Although the above-mentioned memory bodies have a certain level of durability and have already begun to appear on the market, they have major drawbacks.
上記記憶体を搭載した磁気記憶装置を40°C180%
R,H,、の環境下に放置すると記憶体1枚の1〜2カ
所に力負点が発生し、ディフェクトエラーに至る。又記
憶体とヘッドとの接触を繰り返すことにより、両者間の
摩擦係数が増大し、スピンドルモーターがしばしば停止
に至った。Magnetic storage device equipped with the above storage body at 40°C 180%
If the storage medium is left in an environment of R, H, etc., a weak point will occur in one or two places on one memory body, leading to a defect error. Furthermore, repeated contact between the storage body and the head increased the coefficient of friction between them, often causing the spindle motor to stop.
従来の技術では、磁性薄膜の耐食性を充分に確保できず
、又記憶体とヘッド間の機械的信頼性を充分に確保でき
ないという課組を有していた。Conventional techniques have had the problem of not being able to ensure sufficient corrosion resistance of the magnetic thin film, and not being able to ensure sufficient mechanical reliability between the storage body and the head.
本発明は上記の課題を解決するものであり、その目的と
するところは、水分や塩素等の環境下に於ける金属媒体
の耐食性を飛躍的に向上させるとともに、記憶体とヘッ
ド間の摩擦係数を大幅に低減し、且つその効果を長期に
維持しつる信頼性に優れた記憶体の製造、提供と該記憶
体を用いた磁気記憶装置を提供することにある。The present invention solves the above problems, and its purpose is to dramatically improve the corrosion resistance of metal media in environments containing moisture and chlorine, and to improve the coefficient of friction between the storage body and the head. It is an object of the present invention to manufacture and provide a highly reliable memory body that can significantly reduce the amount of water and maintain its effects over a long period of time, and to provide a magnetic memory device using the memory body.
本発明は基体上に磁性薄膜が被覆され、該磁性薄膜上に
少なくとも脂肪酸の金属塩と弗素化ポリエーテル重合体
を含む有機物層を被覆せしめた事を特徴とする。The present invention is characterized in that a magnetic thin film is coated on a substrate, and an organic layer containing at least a metal salt of a fatty acid and a fluorinated polyether polymer is coated on the magnetic thin film.
又更に該磁性薄膜と該有機化合物層との間に炭化物、窒
化物、酸化物或いは炭素から選ばれる少なくとも1種の
物質より成る薄膜を形成せしめた事を特徴とする。又、
更に炭化物、窒化物、酸化物或いは炭素から選ばれる少
なくとも1種の物質より成る薄膜と該有機化合物層との
間に分子内に異なる官能基を有するカップリング剤の薄
膜を形成せしめた事を特徴とする。Furthermore, a thin film made of at least one substance selected from carbide, nitride, oxide, or carbon is formed between the magnetic thin film and the organic compound layer. or,
Furthermore, a thin film of a coupling agent having different functional groups in the molecule is formed between the thin film made of at least one substance selected from carbide, nitride, oxide, or carbon and the organic compound layer. shall be.
磁性薄膜は従来技術と同様の材料そして製法によって被
覆する事が出来る* Co + F e + N
x TCr、 Ta、 P、 貴金属元素等か
ら成る金属を湿式メツキ法やスパッタリング法に代表さ
れる乾式成膜法で被覆形成する。The magnetic thin film can be coated using the same materials and manufacturing methods as in the prior art* Co + Fe + N
x A metal consisting of TCr, Ta, P, a noble metal element, etc. is coated by a dry film forming method such as a wet plating method or a sputtering method.
炭化物、窒化物、酸化物は、Al、 B、 Y、
Si、 Ti、 Zr、 Hf、 Nb、
Ta、 Cn、 Mo。Carbides, nitrides, and oxides include Al, B, Y,
Si, Ti, Zr, Hf, Nb,
Ta, Cn, Mo.
Wから選ばれる元素の化合物であり、その混合や積層化
は任意である。炭素はグラファイト、ダイヤモンド、ア
モルファス(i−カーボンを含む)の単独、混合、積層
であり、いずれも100〜400人の膜厚が適切である
。上記化合物及び炭素はスパッタリング法、イオンブレ
ーティング法等のPVD法やCVD法で被覆形成可能で
あり、更に酸化物は有機金属化合物の熱分解法によって
も被覆形成が可能である。It is a compound of elements selected from W, and the mixing and lamination thereof are arbitrary. The carbon may be graphite, diamond, or amorphous (including i-carbon) alone, mixed, or laminated, and a film thickness of 100 to 400 carbon is appropriate for each. The above-mentioned compounds and carbon can be coated by a PVD method or CVD method such as a sputtering method or an ion blasting method, and the oxide can also be coated by a thermal decomposition method of an organometallic compound.
分子内に異なる官能基を有するカップリング剤は例えば
分子の一方に加水分解性基を有し、他方にアミノ基或い
はイミノ基の少なくとも1種の官能基を有する有機金属
化合物であるが下記一般式%式%
ここでR′はアミノ基或いはイミノ基の少なくとも1種
の官能基を有する有機基であり、Rは炭素数1〜5のア
ルキル基である。又MはSi、Ti、Zr、Nb、Hf
、Ta等の金属元素であり、mは各々の金属元素の価数
である。又1は1から(m−1)までの整数である。A coupling agent having different functional groups in the molecule is, for example, an organometallic compound having a hydrolyzable group on one side of the molecule and at least one kind of functional group such as an amino group or an imino group on the other side. % Formula % Here, R' is an organic group having at least one functional group such as an amino group or an imino group, and R is an alkyl group having 1 to 5 carbon atoms. Also, M is Si, Ti, Zr, Nb, Hf
, Ta, etc., and m is the valence of each metal element. Further, 1 is an integer from 1 to (m-1).
代表的な有機金属化合物を、以下に示す。Representative organometallic compounds are shown below.
NH2−(OH2)t−NH−(CHt)参−3i−(
OCHs)s
Hs
NH2(CH2) 2−NH−(CH2)s−31−(
OCHz)p
NH2(CH2)2−NH−(CH2)2−NH−(C
H2) 2− S i −(OCHs) sこれらは、
いずれも、アルコール等の可溶性溶媒に希釈され、スプ
レー法、スピンナー法、ディッピング法やパイロゾル法
等の既知の方法で塗布後焼成により重縮合膜とする。
?J1度は得たい膜厚により決定され、膜厚は単分子
厚みでも充分であり、200人前後以下の厚膜でも問題
はない、又焼成は60℃〜200℃、5分〜20分で充
分である。NH2-(OH2)t-NH-(CHt)see-3i-(
OCHs)s Hs NH2(CH2) 2-NH-(CH2)s-31-(
OCHz)p NH2(CH2)2-NH-(CH2)2-NH-(C
H2) 2-S i -(OCHs) These are:
All of these are diluted with a soluble solvent such as alcohol, applied by a known method such as a spray method, a spinner method, a dipping method, or a pyrosol method, and then baked to form a polycondensation film.
? The J1 degree is determined by the desired film thickness, and a monomolecular thickness is sufficient, and there is no problem with a film with a thickness of around 200 or less, and baking at 60°C to 200°C for 5 to 20 minutes is sufficient. It is.
脂肪酸の金属塩は、飽和、不飽和、直鎖、分枝の脂肪酸
とLi、Na、に、Ca、Mg、Znとの金属塩に代表
されるものであり、又弗素化ポリエーテル重合体は分子
内にC0OH基の様な極性基、エポキシ基の様な官能基
、不対電子を有する窒素含有基や、環状鎖を含む有機基
を含み、主体がパーフロロアルキルポリエーテルである
。Metal salts of fatty acids are typified by metal salts of saturated, unsaturated, linear, and branched fatty acids with Li, Na, Ca, Mg, and Zn, and fluorinated polyether polymers are The molecule contains a polar group such as a C0OH group, a functional group such as an epoxy group, a nitrogen-containing group having an unpaired electron, and an organic group containing a cyclic chain, and is mainly a perfluoroalkyl polyether.
これらは、混合し、可溶性溶媒、例えばフロン113に
希釈し、スプレー法、スピンナー法、ディッピング法や
パイロゾル法等の既知の方法で塗布後、必要に応じて焼
成を行なう、焼成は60〜150℃、3〜10分間で充
分であり、膜厚は50A前後以下で充分である。These are mixed, diluted in a soluble solvent such as Freon 113, applied by a known method such as a spray method, a spinner method, a dipping method, or a pyrosol method, and then baked as necessary. , 3 to 10 minutes is sufficient, and a film thickness of around 50A or less is sufficient.
本発明によれば、耐食性に劣る金属磁性薄膜を含む各種
磁性薄膜上に、密着性に優れ、高硬度、緻密性の特長を
有する炭化物、窒化物、酸化物或いは炭素から選ばれる
物質より成る薄膜で被覆され、力負を誘発する水分や塩
素等から磁性薄膜を保護する。According to the present invention, a thin film made of a substance selected from carbides, nitrides, oxides, or carbon having excellent adhesion, high hardness, and denseness is applied to various magnetic thin films including metal magnetic thin films with poor corrosion resistance. This protects the magnetic thin film from moisture, chlorine, etc. that can cause negative forces.
しかし炭化物、窒化物そして酸化物は、いずれも潤滑性
に乏しく、比較的潤滑性に優れる炭素に於いても潤滑能
が不充分であり、更に潤滑剤を被覆することが試みられ
ている。However, carbides, nitrides, and oxides all have poor lubricity, and even carbon, which has relatively excellent lubricity, has insufficient lubricity, and attempts have been made to coat the surface with a lubricant.
上記潤滑剤として、前述の如くパーフロロポリエーテル
重合体に代表される液体潤滑剤や高級アルコール、脂肪
酸に代表される固体潤滑剤が検討されているが、記憶体
の回転時の遠心力や熱等により、その膜厚が減少し、初
期の優れた潤滑能が経時的に失なわれた。又ヘッドの衝
撃力が吸収しきれず、ヘッドが磁性薄膜に到達し、ヘッ
ドクラッシュに至った。As mentioned above, liquid lubricants typified by perfluoropolyether polymers and solid lubricants typified by higher alcohols and fatty acids are being considered as the above-mentioned lubricants. As a result, the film thickness decreased and the initial excellent lubricating ability was lost over time. Furthermore, the impact force of the head could not be absorbed completely and the head reached the magnetic thin film, resulting in a head crash.
本発明では、磁性薄膜及び炭化物、窒化物、酸化物或い
は炭素から選ばれる物質より成る薄膜、弗素化ポリエー
テル重合体そして脂肪酸の金属塩とそれぞれ親和性を持
つカップリング剤の薄膜を形成するものであり、潤滑能
に優れる弗素化ポリエーテル重合体及び脂肪酸の金属塩
はヘッドの衝撃摩耗や記憶体の回転遠心力によって、簡
単に記憶体上を移動する事はない。又弗素化ポリエーテ
ル重合体及び脂肪酸の金属塩は共に耐熱性に優れる物質
であり、特に脂肪酸の金属塩は耐衝撃力の吸収性に優れ
ることから、増々硬貿化するヘッドによる強い衝撃にも
充分耐え、ヘッドクラッシュを皆無にすることが可能に
なった。In the present invention, a magnetic thin film, a thin film made of a substance selected from carbides, nitrides, oxides, or carbon, a thin film of a coupling agent having an affinity with a fluorinated polyether polymer, and a metal salt of a fatty acid are formed. Therefore, the fluorinated polyether polymer and the metal salt of fatty acid, which have excellent lubrication ability, do not easily move on the storage medium due to impact wear of the head or rotational centrifugal force of the storage medium. In addition, both fluorinated polyether polymers and metal salts of fatty acids are substances with excellent heat resistance, and metal salts of fatty acids in particular have excellent impact resistance, so they can withstand strong impacts from heads, which are becoming increasingly difficult to trade. It withstood well and was able to completely eliminate head crashes.
以上により長期機械的信頼性及び保存信頼性に優れた記
憶体の製造、提供が可能になり、更に該記憶体を用いる
事により磁気記憶装置の長期信頼性は著るしく向上した
。As described above, it has become possible to manufacture and provide a memory body with excellent long-term mechanical reliability and storage reliability, and furthermore, by using this memory body, the long-term reliability of a magnetic memory device has been significantly improved.
鏡面仕上げされたディスク状アルミニウム合金基板上に
非磁性N1−P合金メツキを約15μm厚に施こした後
、研磨加工により表面粗度Ra=50〜100A、Rn
ax=500〜100OAにすじ目付けし、更にCo−
N1−P合金メツキを約0.05μm厚に施こした。After applying non-magnetic N1-P alloy plating to a thickness of approximately 15 μm on a mirror-finished disc-shaped aluminum alloy substrate, polishing is performed to obtain a surface roughness of Ra = 50 to 100A, Rn
Add a stripe to ax=500~100OA, and further Co-
N1-P alloy plating was applied to a thickness of about 0.05 μm.
上記基板を用いマグネトロンスパッタ装置で各々の物質
の薄膜を第1表の如く被覆した。尚到達真空度は1xl
O−’torr以下、基板前加熱は80℃、 10分間
、パワーは4 W / c m ”とした。Using the above substrate, a thin film of each substance was coated as shown in Table 1 using a magnetron sputtering device. Furthermore, the degree of vacuum achieved is 1xl
The substrate was preheated at 80° C. for 10 minutes at a power of 4 W/cm” below O-'torr.
他方、上記基板を用い第2表の9口くディッピング法に
より、各種有機金属化合物を塗布後、焼成しその重縮合
膜を被覆した。尚処理液溶媒はメタノールとフロン11
3の混合(体積比1対3)とし、濃度は1.0W/V%
、液温は25℃とした。On the other hand, using the above substrate, various organic metal compounds were coated by the dipping method shown in Table 2, and then baked to cover the polycondensation film. The processing liquid solvents are methanol and Freon 11.
3 (volume ratio 1:3), concentration is 1.0W/V%
The liquid temperature was 25°C.
又引き上げ速度は10cm/minとし、焼成は150
℃、 30分間とした。In addition, the pulling speed was 10 cm/min, and the firing was 150 cm/min.
℃ for 30 minutes.
次に第3表のカップリング剤をメタノールとフロン11
3(体積比1対3)に0.005W/V%に希釈後、デ
ィッピング法で塗布後、焼成しその重縮合膜を被覆した
。尚液温は25℃、引き上げ速度は、Locm/min
とし、焼成は110°C110分間とした。Next, combine the coupling agent in Table 3 with methanol and Freon 11.
3 (volume ratio 1:3) and diluted to 0.005 W/V%, applied by a dipping method, baked, and coated with the polycondensation film. The liquid temperature is 25°C, and the pulling speed is Locm/min.
The firing was performed at 110°C for 110 minutes.
次に第3表の脂肪酸の金属塩と弗素化ポリエーテル重合
体を被覆した。尚両材料に於いて商品名や略号で表わし
たものは後に詳細を記す。The metal salts of the fatty acids shown in Table 3 and the fluorinated polyether polymers were then coated. Details of product names and abbreviations for both materials will be given later.
上記材料はフロン113に希釈しく漬度0.01W/V
%)、ディッピング法で塗布した。ディッピング法は液
温25℃、引き上げ速度10Cm/ m i nとした
。The above material is diluted in Freon 113 and soaked at 0.01W/V.
%), applied by dipping method. The dipping method was performed at a liquid temperature of 25° C. and a pulling rate of 10 Cm/min.
第1表
第2表
第3表
・クライトツクス: デュポン社製弗素化オイル・15
7FS/L&Mは分子末端片官能基(C00H基)タイ
プ
・フオンブリン: モンテジソン社製弗素オイル・Z−
DIACは分子末端間官能基(COOH基)タイプ
・Z−AM2001は分子両末端ナチュラルリンググル
ープ基
・ FC−Aは、 CFs−CF20 (02
F40) ロー(CF20)I−CF−(CFa○)
m−(C2F40)0OH
−−CF t OCF iであり、o、 nは整数を
表わし、分子量は約2500である。Table 1 Table 2 Table 3 - Krytx: DuPont Fluorinated Oil 15
7FS/L&M is a single functional group (C00H group) type at the end of the molecule.
DIAC is a functional group between the ends of the molecule (COOH group) type, Z-AM2001 is a natural ring group group at both ends of the molecule, and FC-A is CFs-CF20 (02
F40) Low (CF20) I-CF- (CFa○)
m-(C2F40)0OH--CFtOCFi, o and n represent integers, and the molecular weight is about 2500.
上記製造方法により作製した記憶体と、3370タイプ
の薄膜ヘッド(フライハイド0.15μm、9m/5e
e)を用い磁気記憶装置を作製し、下記試験によって評
価した。結果は第4表に示す。A memory body manufactured by the above manufacturing method and a 3370 type thin film head (Flyhide 0.15μm, 9m/5e
A magnetic storage device was manufactured using e) and evaluated by the following test. The results are shown in Table 4.
(1)C3S耐久試験
C8S動作(立ち上がり、立ち下がり時間10see)
前後の外観変化、静摩擦係数と出力の低下率を求める。(1) C3S durability test C8S operation (rise and fall time 10see)
Determine the change in appearance before and after, the coefficient of static friction, and the rate of decrease in output.
(2)耐食性試験
80℃、90%R,H,の環境下に放置して、放置時間
の経過をおって、ミッシングピット数を測定し、その増
加が認められた時点を寿命と判断した。(2) Corrosion Resistance Test The product was left in an environment of 80° C. and 90% R, H, and after the time had passed, the number of missing pits was measured, and the time when the number of missing pits increased was determined to be the end of its life.
第4表
〔発明の効果〕
高記録密度対応の記憶体としての薄膜型記憶体を用いた
磁気記憶装置が登場して久しいが、長期信頼性に対する
不安からその使用は一部に限られていた。Table 4 [Effects of the invention] Magnetic storage devices using thin-film storage as a storage medium compatible with high recording densities have been on the market for some time, but their use has been limited to some due to concerns about long-term reliability. .
本発明によれば、加温湿下で記憶体が用いられても磁性
薄膜は実用的に何等の影響を受けず、又増々硬質化、低
フライハイド化するヘッドを用いての機械的信頼性が高
いので、更に小型化し、厳しい環境下で用いられる磁気
記憶装置に搭載されても、記憶体、ヘッドはともに特性
劣化は、はとんど認められない。According to the present invention, the magnetic thin film is practically unaffected even if the storage medium is used under hot and humid conditions, and mechanical reliability is improved even when using heads that are becoming increasingly hard and have low fly-hide properties. Because of the high resistance, even if the magnetic storage device is further miniaturized and installed in a magnetic storage device used in harsh environments, no deterioration in the characteristics of either the storage body or the head will be observed.
以上の如く、高記録密度対応の高耐久性記憶体の製造、
提供そして該記憶体を用いることにより信頼性の高い磁
気記憶装置の提供が可能になった。As described above, manufacturing of highly durable memory bodies compatible with high recording density,
By providing and using the storage body, it has become possible to provide a highly reliable magnetic storage device.
以 上 出願人 セイコーエプソン株式会社that's all Applicant: Seiko Epson Corporation
Claims (9)
酸の金属塩と弗素化ポリエーテル重合体を含む有機化合
物層を被覆せしめた事を特徴とする磁気記憶体。(1) A magnetic memory body characterized in that a substrate coated with a magnetic thin film is coated with an organic compound layer containing at least a metal salt of a fatty acid and a fluorinated polyether polymer.
物、酸化物或いは炭素から選ばれる少なくとも1種の物
質より成る薄膜を形成せしめた事を特徴とする請求項1
記載の磁気記憶体。(2) A thin film made of at least one substance selected from carbide, nitride, oxide, or carbon is formed between the magnetic thin film and the organic compound layer.
The magnetic memory described above.
少なくとも1種の物質より成る薄膜と該有機化合物層と
の間に、分子内に異なる官能基を有するカップリング剤
の薄膜を形成せしめた事を特徴とする請求項2記載の磁
気記憶体。(3) A thin film of a coupling agent having different functional groups in the molecule is formed between the organic compound layer and a thin film made of at least one substance selected from carbide, nitride, oxide, or carbon. The magnetic storage body according to claim 2, characterized in that:
少なくとも脂肪酸の金属塩と弗素化ポリエーテル重合体
を含む有機化合物層を被覆する工程を有する事を特徴と
する磁気記憶体の製造方法。(4) Production of a magnetic memory body comprising the steps of coating a magnetic thin film on a substrate, and coating the magnetic thin film with an organic compound layer containing at least a metal salt of a fatty acid and a fluorinated polyether polymer. Method.
化物、酸化物或いは炭素から選ばれる少なくとも1種の
物質より成る薄膜を形成する工程を有する事を特徴とす
る請求項4記載の磁気記憶体の製造方法。(5) The method further comprises the step of forming a thin film made of at least one substance selected from carbides, nitrides, oxides, and carbon between the magnetic thin film and the organic compound layer. A method for manufacturing a magnetic storage body.
少なくとも1種の物質より成る薄膜と該有機化合物層と
の間に、分子内に異なる官能基を有するカップリング剤
の薄膜を形成せしめる工程を有する事を特徴とする請求
項5記載の磁気記憶体の製造方法。(6) Forming a thin film of a coupling agent having different functional groups in the molecule between the organic compound layer and a thin film made of at least one substance selected from carbides, nitrides, oxides, or carbon. 6. The method of manufacturing a magnetic storage body according to claim 5, further comprising:
る磁気記憶装置。(7) A magnetic storage device characterized by using the magnetic storage body according to claim 1.
る磁気記憶装置。(8) A magnetic storage device characterized by using the magnetic storage body according to claim 2.
る磁気記憶装置。(9) A magnetic storage device characterized by using the magnetic storage body according to claim 3.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23196388A JPH0279211A (en) | 1988-09-16 | 1988-09-16 | Magnetic recording body, its production, and magnetic memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23196388A JPH0279211A (en) | 1988-09-16 | 1988-09-16 | Magnetic recording body, its production, and magnetic memory |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0279211A true JPH0279211A (en) | 1990-03-19 |
Family
ID=16931795
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23196388A Pending JPH0279211A (en) | 1988-09-16 | 1988-09-16 | Magnetic recording body, its production, and magnetic memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0279211A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011003261A (en) * | 2009-06-22 | 2011-01-06 | Hitachi Ltd | Magnetic recording medium, method for manufacturing the same, and magnetic storage device |
-
1988
- 1988-09-16 JP JP23196388A patent/JPH0279211A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011003261A (en) * | 2009-06-22 | 2011-01-06 | Hitachi Ltd | Magnetic recording medium, method for manufacturing the same, and magnetic storage device |
US8318332B2 (en) | 2009-06-22 | 2012-11-27 | Hitachi, Ltd. | Magnetic recording medium, method for fabricating the same, and magnetic storage device |
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