JPH01256139A - Wire bonding equipment - Google Patents

Wire bonding equipment

Info

Publication number
JPH01256139A
JPH01256139A JP63085736A JP8573688A JPH01256139A JP H01256139 A JPH01256139 A JP H01256139A JP 63085736 A JP63085736 A JP 63085736A JP 8573688 A JP8573688 A JP 8573688A JP H01256139 A JPH01256139 A JP H01256139A
Authority
JP
Japan
Prior art keywords
wire
bonding
gas
capillary
nitrogen gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63085736A
Other languages
Japanese (ja)
Inventor
Takeshi Kaneda
剛 金田
Hiroshi Mikino
三木野　博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP63085736A priority Critical patent/JPH01256139A/en
Publication of JPH01256139A publication Critical patent/JPH01256139A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
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    • H01L2224/73265—Layer and wire connectors
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    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78268—Discharge electrode
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    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/8212—Aligning
    • H01L2224/82148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/82169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, e.g. nozzle
    • H01L2224/8218—Translational movements
    • H01L2224/82181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip
    • H—ELECTRICITY
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
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    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85075—Composition of the atmosphere being inert
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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    • H01L2924/01—Chemical elements
    • H01L2924/01007—Nitrogen [N]
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

PURPOSE:To enable high reliable wire bonding using covered wire, by installing a nozzle to jet gas via a gas feeding channel, against the intermediate part of a wire protruding from the tip of a bonding tool, and a gas cooling means extending from at least a jetting vent of the nozzle to the gas feeding channel. CONSTITUTION:Since nitrogen gas 34 is jetted against a prescribed part at the intermediate position of a wire 26 from a nozzle 35, accumulated resin 45 is scattered by the blowing pressure of the nitrogen gas 34. The nitrogen gas 34 jetted from the nozzle 35 is kept cold with high cooling efficiency, by cooling nitrogen gas 42 flowing in a cooling pipe 41 of double-tube structure. Even in the case where the vicinity of the tip of a capillary 24 is turned into a high temperature atmosphere by arc discharge, nitrogen gas 34 of sufficiently low temperature can be jetted, so that the melting amount of coating material 36b never becomes excessive. Thereby, accumulated resin 45 is restrained from ascending up to the inside of the capillary 24, the plugging of the capillary 24 is prevented, and high reliable wire bonding is enabled.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、ワイヤボンディング装置、特に被覆ワイヤを
用いたワイヤボンディングに適用して有効な技術に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a wire bonding device, and particularly to a technique that is effective when applied to wire bonding using coated wire.

〔従来の技術〕[Conventional technology]

この種の技術について記載されている例としては、株式
会社工業調査会、昭和６２年１１月１８日発行、「電子
材料別冊、超ＬＳＩ製造・試験装置ガイドブックＪＰ１
２３〜Ｐ１２９がある。An example of this type of technology described is "Electronic Materials Special Volume, VLSI Manufacturing and Testing Equipment Guidebook JP1, published by Kogyo Chosukaikai Co., Ltd., November 18, 1986.
There are 23 to P129.

上記文献においては、ボンディング方式の分類をはじめ
、近年におけるワイヤボンディングに関する技術動向が
各構成要素について詳説されている。In the above-mentioned document, the technical trends related to wire bonding in recent years are explained in detail for each component, including the classification of bonding methods.

ところで、半導体装置の高集積化、高機能化が促進され
ることにより、半導体ペレット上のパッドのピッチ間隔
も微細化し、一方、インナーリード先端ピッチ間隔もこ
れに比例する傾向にある。Incidentally, as semiconductor devices become more highly integrated and highly functional, the pitch of pads on semiconductor pellets becomes finer, and the pitch of inner lead tips also tends to be proportional to this.

したがって、パッドとインナーリードとを結線するワイ
ヤも並列方向に高密度状態でワイヤボンディングされる
結果となり、ワイヤ間での電気的短絡、ワイヤと半導体
ペレットあるいはタブとの接触が顕著な問題となってき
た。Therefore, the wires that connect the pads and the inner leads are also wire-bonded in a parallel direction in a high density state, and electrical short circuits between the wires and contact between the wires and semiconductor pellets or tabs become serious problems. Ta.

上記の諸問題を解決するために、導電性のワイヤの周囲
に酸化膜あるいは合成樹脂等で皮膜を施した被覆ワイヤ
を用いた結線技術が注目されている。In order to solve the above-mentioned problems, a wiring technique using a coated wire in which a conductive wire is coated with an oxide film or a synthetic resin film is attracting attention.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

ところが、上記文献をはじめとして、従来のワイヤボン
ディング装置に関する技術では、被覆ワイヤによるボン
ディングに関して、十分に配慮されてはいなかった。However, in the techniques related to conventional wire bonding apparatuses, including the above-mentioned document, sufficient consideration has not been given to bonding using coated wires.

すなわち、一般に熱圧着方式あるいは熱圧着と超音波接
合との併用方式においては、第１ボンデイングとしてボ
ンディングツールであるキャピラリの先端から突出され
たワイヤの一端をボール状に加熱した後、該ボール８分
を半導体ペレットのパッドに接合する作業が行なわれる
。このとき、ワイヤの周囲に被着された合成樹脂等の被
覆材は、上記ボンディングボール形成時の加熱によりワ
イヤを上方に伝わってキャピラリ方向に溶は上がってゆ
く。この溶は上がりの過程においてさらにワイヤの途中
部分の被覆材を溶かして集めるため、ワイヤの上方に向
かって次第に大きく溶は上がる環状の幀（脂漏りが形成
されていく。That is, in general, in the thermocompression bonding method or the combination method of thermocompression bonding and ultrasonic bonding, as the first bonding, one end of the wire protruding from the tip of the capillary, which is the bonding tool, is heated into a ball shape, and then the ball is heated for 8 minutes. The process involves bonding the semiconductor pellet to the pad of the semiconductor pellet. At this time, the coating material such as synthetic resin applied around the wire is heated during the formation of the bonding ball, and the melt is transmitted upward through the wire and rises in the direction of the capillary. During the rising process, this melt further melts and collects the covering material in the middle of the wire, so that an annular fold (grease leakage) is formed where the melt gradually rises upward toward the top of the wire.

このような樹脂溜りの上昇量が大きくなると、ワイヤ導
電面の露出部分が広がり、後続の樹脂モールド時におい
て、ワイヤのショートを生じる結果となり被覆ワイヤに
よる利点が実質的に失われてしまう結果となる。If the amount of rise of such a resin puddle becomes large, the exposed portion of the wire conductive surface will expand, resulting in a short circuit of the wire during subsequent resin molding, and the benefits of the coated wire will essentially be lost. .

また、上記樹脂溜りの上昇量が過多となると、キャピラ
リの目詰まりの原因となり、断線等のボンディング不良
を来す要因となることも本発明者によって見い出された
。The inventors have also discovered that if the amount of rise of the resin reservoir is excessive, it causes clogging of the capillary and causes bonding defects such as wire breakage.

本発明は、上記課題に着目してなされたものであり、そ
の目的は被覆材の除去を適切に行い、結線信頼性の高い
被覆ワイヤによるワイヤボンディングを実現することに
ある。The present invention has been made in view of the above-mentioned problems, and its purpose is to appropriately remove the covering material and realize wire bonding using covered wires with high connection reliability.

本発明の前記ならびにその池の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The objects and novel features of the invention and its ponds will become apparent from the description of the present specification and the accompanying drawings.

〔課題を解決するための手段〕[Means to solve the problem]

本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、）既ね次の通りである。A brief summary of typical inventions disclosed in this application is as follows.

すなわち、ボンディングツールの先端から突出されたワ
イヤの途中部分に対して気体供給路を介して気体の吹き
付けを行なうノズルと、少なくともノズルの吹出口近傍
から気体供給路にわたって設けられた気体冷却手段とを
備えたワイヤボンディング装置構造とするものである。That is, a nozzle that sprays gas through a gas supply path to a midway portion of the wire protruding from the tip of the bonding tool, and a gas cooling means provided at least from near the outlet of the nozzle to the gas supply path. The structure of the wire bonding device is as follows.

〔作用〕[Effect]

上記した手段によれば、ノズルからの気体の吹き付けに
より、ワイヤの途中部分における被覆材の溜りを層数さ
せることが可能になるとともに、特にノズルの吹出口近
傍から気体供給路にわたって設けられた気体冷却手段に
よって、吹き付けられる気体の保冷・冷却効果を著しく
高めることができる。According to the above-mentioned means, by spraying gas from the nozzle, it is possible to increase the number of layers of the coating material in the middle part of the wire, and in particular, it is possible to increase the number of layers of the coating material in the middle part of the wire. The cooling means can significantly enhance the cooling effect of the blown gas.

このため、ワイヤに吹き付けられる気体は、十分に冷却
された状態となり、加熱環境下における除去被覆材の再
凝固を効果的に防止でき、信頼性の高いワイヤとパッド
との結線が可能となる。Therefore, the gas blown onto the wire is sufficiently cooled, effectively preventing the removed coating material from re-solidifying in a heated environment, and making it possible to connect the wire and pad with high reliability.

また、冷却気体の吹き付けにより、ワイヤの途中部分に
おける被覆材の溶は上がり位置を制御することが可能と
なり、溶は上がり量が過大となることによるワイヤのシ
ョート、およびキャピラリの目詰まりを有効に防止でき
、被覆ワイヤによる信頼性の高いワイヤボンディングを
実現することができる。In addition, by spraying cooling gas, it is possible to control the position at which the coating material melts in the middle of the wire, effectively preventing wire shorts and capillary clogging due to excessive melt rising. This makes it possible to achieve highly reliable wire bonding using coated wires.

〔実施例〕〔Example〕

第１図は本発明の一実施例であるワイヤボンディング装
置のキャピラリ近傍を示す説明図、第２図はワイヤボン
ディング装置全体を示す概略図、第３図は本実施例のワ
イヤボンディング装置によるワイヤボンディング工程を
示す説明図、第４図は本実施例によって得られる半導体
装置２を示す概略断面図である。FIG. 1 is an explanatory diagram showing the vicinity of the capillary of a wire bonding device according to an embodiment of the present invention, FIG. 2 is a schematic diagram showing the entire wire bonding device, and FIG. 3 is a diagram showing wire bonding by the wire bonding device of this embodiment. FIG. 4, which is an explanatory drawing showing the steps, is a schematic cross-sectional view showing the semiconductor device 2 obtained by this example.

本実施例のワイヤボンディング装置１は、第４図に示さ
れるような樹脂封止パッケージ構造の半導体装置２の組
立工程に際して、半導体ベレット３のバッド４とリード
フレーム５のインナーリード５ａとを電気的に結線する
ためのものである。The wire bonding apparatus 1 of this embodiment electrically connects the pad 4 of the semiconductor pellet 3 and the inner lead 5a of the lead frame 5 during the assembly process of the semiconductor device 2 having a resin-sealed package structure as shown in FIG. This is for connecting to.

該ワイヤボンディング装置１は、駆動機構としてのボン
ディングヘッド６が搭載されたＸＹステージ７と、被ボ
ンデイング部材であるリードフレーム５が載置されるボ
ンディングステージ８とを有している。ボンディングス
テージ８には上下動が可能なヒートブロックＩＯがヒー
タ１１を内蔵した状態で取付けられており、当該ヒート
ブロックｌＯの上面はボンディングステージ面を構成し
ている。上記ボンディングステージ面に供給されるリー
ドフレーム５は、４２アロイあるいはニッケル合金、コ
バール等で構成された導電性金属板に、エツチングある
いはプレス加工を施して所定形状としたものであり、そ
の平面中央に設けられたタブ１２の主面には、シリコン
（Ｓｉ）半導体からなる半導体ベレット３が樹脂ペース
ト１３によって被着されている。The wire bonding apparatus 1 includes an XY stage 7 on which a bonding head 6 as a drive mechanism is mounted, and a bonding stage 8 on which a lead frame 5 as a member to be bonded is placed. A heat block IO that can move up and down is attached to the bonding stage 8 with a built-in heater 11, and the upper surface of the heat block IO constitutes the surface of the bonding stage. The lead frame 5 supplied to the surface of the bonding stage is a conductive metal plate made of 42 alloy, nickel alloy, Kovar, etc., etched or pressed into a predetermined shape. A semiconductor pellet 3 made of a silicon (Si) semiconductor is adhered to the main surface of the provided tab 12 with a resin paste 13.

上記半導体ベレット３は、図示されないＳｉ半導体基板
上に所定の集積回路領域を多数形成した半導体ウェハを
四角形状に分割して得られるものであり、その最上面に
は絶縁物質を被着して形成されたパッシベーション膜１
４が形成されている。The semiconductor pellet 3 is obtained by dividing a semiconductor wafer into rectangular shapes in which a large number of predetermined integrated circuit regions are formed on a Si semiconductor substrate (not shown), and an insulating material is coated on the top surface of the semiconductor wafer. Passivation film 1
4 is formed.

該バッンベーション膜１４の一部は開孔されており、ア
ルミニウム（Ａｆ）で形成されたパッド４の一部が上面
方向に露出状態となっている。A part of the banbation film 14 is opened, and a part of the pad 4 made of aluminum (Af) is exposed in the upper surface direction.

ＸＹステージ７上に搭載されたボンディングヘッド６の
内部には、上下動ブロック１５が垂直方向に設けられた
案内軸１６によって昇降可能に取付けられており、当該
上下動ブロック１５の側面にはボンディングヘッド６に
固定されたサーボモータ１７の回転を上下方向の直線運
動に変換するポールねじ機構１８が設けられている。し
たがって、サーボモータ１７の作動にともなって上下動
ブロック１５が所定量だけ上下方向に移動可能とされて
いる。Inside the bonding head 6 mounted on the XY stage 7, a vertically movable block 15 is attached so as to be movable up and down by a guide shaft 16 provided in the vertical direction. A pole screw mechanism 18 is provided that converts the rotation of a servo motor 17 fixed to the motor 6 into vertical linear movement. Therefore, with the operation of the servo motor 17, the vertical movement block 15 can be moved vertically by a predetermined amount.

上下動ブロック１５には回転軸２０を中心に鉛直平面内
において回動可能なボンディングアーム２１が取付けら
れている。このボンディングアーム２１の一端は、上下
動ブロック１５に固定されたボイスコイルモータ２２に
よって上方に付勢されており、該ボイスコイルモータ２
２の作動によってボンディングアーム２１に対して反時
計方向の回動力が作用するように構成されている。A bonding arm 21 is attached to the vertically movable block 15 and is rotatable in a vertical plane about a rotating shaft 20 . One end of this bonding arm 21 is urged upward by a voice coil motor 22 fixed to the vertical movement block 15.
2, a rotational force is applied to the bonding arm 21 in a counterclockwise direction.

上記ボンディングアーム２１の上下動ブロック１５側内
端には、超音波発振部２３が設けられており、ボンディ
ングアーム２１に対して所定の超音波振動を伝える構造
となっている。一方、ボンディングアーム２１の外方先
端には、ボンディングツールとしてのキャピラリ２４が
該ボンディングアーム２１に対してほぼ垂直下方に取付
けられており、当該キャピラリ２４の軸方向には、上方
のワイヤスプール２５に巻回されたワイヤ２６がその一
端をキャピラリ２４の下方先端より突出させた状根で挿
通されている。上記ワイヤ２６はワイヤスプール２５よ
りキャピラリ２４に至る間にテンショナ２７により所定
の張力が加えられるとともに、ワイヤガイド２８により
キャピラリ２４に対して位置決めされ、クランパ３０に
より随時保持されるようになっている。An ultrasonic oscillator 23 is provided at the inner end of the bonding arm 21 on the vertical movement block 15 side, and has a structure that transmits a predetermined ultrasonic vibration to the bonding arm 21. On the other hand, at the outer tip of the bonding arm 21, a capillary 24 as a bonding tool is attached almost perpendicularly downward to the bonding arm 21. A wound wire 26 is inserted through the capillary 24 with one end thereof protruding from the lower end of the capillary 24 . The wire 26 is applied with a predetermined tension by a tensioner 27 while reaching the capillary 24 from the wire spool 25, is positioned with respect to the capillary 24 by a wire guide 28, and is held by a clamper 30 at any time.

ここで、本実施例に用いられるワイヤ２６について簡単
に説明すると、本実施例のワイヤ２６は被覆ワイヤであ
り、金（Ａｕ）からなるワイヤ本体２６ａの周面にポリ
ウレタン、ポリエステル等の合成樹脂膜で形成された被
覆材２６ｂが被着された構造を有している。このような
ワイヤ２６は、例えば従来構造の金で構成されたワイヤ
本体２６ａを、被覆材２６ｂとなる電気的絶縁性を有す
る合成樹脂の溶液中に浸漬させ、その後乾燥硬化させる
処理を複数回繰り返すことにより得ることができる。Here, to briefly explain the wire 26 used in this embodiment, the wire 26 in this embodiment is a coated wire, and a synthetic resin film such as polyurethane or polyester is coated on the peripheral surface of the wire body 26a made of gold (Au). It has a structure in which a covering material 26b made of is adhered. Such a wire 26 is produced by repeating a process of immersing a conventional wire body 26a made of gold, for example, in a solution of an electrically insulating synthetic resin serving as a covering material 26b, and then drying and curing it several times. This can be obtained by

上記構造のワイヤ２６が挿通されたキャピラリ２４の下
方には、アーク発生装置３１と接続された放電トーチ３
２が配置されており、この放電トーチ３２はトーチモー
フ３３により回動可能とされており、必要時（ホンディ
ングボール形成時）にのみその放電面３２ａがキャピラ
リ２４の直下に位ｌされる。Below the capillary 24 through which the wire 26 of the above structure is inserted is a discharge torch 3 connected to an arc generator 31.
This discharge torch 32 is rotatable by a torch morph 33, and its discharge surface 32a is positioned directly below the capillary 24 only when necessary (when forming a honda ball).

上記放電トーチ３２には所定の高圧電流が印加可能とさ
れており、その放電面３２ａと、グランド電位に保たれ
たワイヤ２６の先端との間にアーク放電を生じさせ、ワ
イヤ２６の先端を加熱するようになっている。A predetermined high voltage current can be applied to the discharge torch 32, and an arc discharge is generated between the discharge surface 32a and the tip of the wire 26 kept at ground potential, thereby heating the tip of the wire 26. It is supposed to be done.

キャピラリ２４の先端近傍には該キャピラリ２４の先端
下方に向けて気体としての吹き付は用窒素ガス３４を噴
出する一対のノズル３５が設けられており、該ノズル３
５は気体供給路としての供給管３６および流量計３７ａ
を経てガス源３８ａに接続されている。本実施例におけ
るガス源３８ａは、たとえば液体窒素を充填したタンク
であり、このタンクより気体状態で放出された吹き付は
用窒素ガス３４は、冷却機構４０ａおよび供給管３６を
経てノズル３５の先端よりワイヤ２６の途中部分に吹き
付けられる。A pair of nozzles 35 are provided near the tip of the capillary 24 for blowing out nitrogen gas 34 as a gas toward the bottom of the tip of the capillary 24.
5 is a supply pipe 36 as a gas supply path and a flow meter 37a
The gas source 38a is connected to the gas source 38a through the gas source 38a. The gas source 38a in this embodiment is, for example, a tank filled with liquid nitrogen, and the nitrogen gas 34 released in a gaseous state from this tank is passed through the cooling mechanism 40a and the supply pipe 36 to the tip of the nozzle 35. It is sprayed onto the middle part of the wire 26.

上記冷却機構４０Ｈにより冷却された吹き付は用窒素ガ
ス３４は、供給管３６を経てノズル３５よりワイヤ２６
の途中部分に吹き付けられるが、キャピラリ２４の周囲
の高温環境により、ノズル３５より噴出される吹き付は
用窒素ガス３４は、熱風状態となってしまう。このため
、本実施例では、上記供給管３６の外周に同軸の２重管
構造で冷却管４１が設けられており、これによって形成
された外周側空間を、専ら冷却目的のみで供給される冷
却用窒素ガス４２が流通される。この冷却用窒素ガス４
２は、上記吹き付は用窒素ガス３４と同様にガス源３８
ｂより冷却機構４０ｂおよび流量計３７ｂを経て冷却管
４１内に供給され、内周の供給管３６内の吹き付は用窒
素ガス３４を保冷・冷却した後、排気管４３を経て外部
に排気される。なお、この排気を冷却して冷却用窒素ガ
ス４２として再度用いてもよい。The blown nitrogen gas 34 cooled by the cooling mechanism 40H is supplied to the wire 26 from the nozzle 35 via the supply pipe 36.
However, due to the high temperature environment around the capillary 24, the nitrogen gas 34 ejected from the nozzle 35 turns into hot air. For this reason, in this embodiment, a cooling pipe 41 is provided on the outer periphery of the supply pipe 36 with a coaxial double pipe structure, and the outer peripheral space formed thereby is used exclusively for cooling purposes. nitrogen gas 42 is distributed. This cooling nitrogen gas 4
2 is a gas source 38 similar to the nitrogen gas 34 for blowing.
b is supplied into the cooling pipe 41 via the cooling mechanism 40b and the flow meter 37b, and the nitrogen gas blown inside the inner circumferential supply pipe 36 keeps and cools the nitrogen gas 34, and then is exhausted to the outside through the exhaust pipe 43. Ru. Note that this exhaust gas may be cooled and used again as the cooling nitrogen gas 42.

次に、本実施例の作用について説明する。Next, the operation of this embodiment will be explained.

まずボンディングボ−ル８のステージ面上に、半導体ベ
レット３の装着された状態のリードフレーム５が供給さ
れると、制御部４４の制御によりＸＹステージ７が作動
して、ポンディングヘッド６をｘＹ方向に所定量移動し
、キャピラリ２４がボンディングを行なうパッド４面の
直上となるように位置される。First, when the lead frame 5 with the semiconductor pellet 3 mounted thereon is supplied onto the stage surface of the bonding ball 8, the XY stage 7 is operated under the control of the control section 44, and the bonding head 6 is moved in the xY direction. direction, and the capillary 24 is positioned directly above the surface of the pad 4 to which bonding is to be performed.

次に、トーチモータ３３が作動され、放電トーチ３２の
放電面３２ａがキャピラリ２４から突出されたワイヤ２
６の先端の直下位置となるように制御される。この状態
で、放電トーチ３２に所定の高圧電流が印加されると、
上記放電トーチ３２の放電面３２ａとワイヤ２６の先端
との間にアーク放電を生じ、ワイヤ２６の先端が加熱溶
融されてボンディングボール２６ｃが形成される。この
とき、ワイヤ２６の周囲に装着されていた被覆材２６ｂ
は、加熱によりワイヤ２６の周面を上方向に溶は上がり
始める。この被覆材２６ｂの溶は上がりにともない、ワ
イヤ２６の周囲には溶融された被覆材２６ｂの樹脂溜り
４５が環状に形成され、この樹脂溜り４５はワイヤ２６
の上部となる程、周囲の被覆材２６ｂを溶融させて大形
のものとなっていく。Next, the torch motor 33 is activated, and the discharge surface 32a of the discharge torch 32 is connected to the wire 2 protruding from the capillary 24.
It is controlled so that the position is directly below the tip of No. 6. In this state, when a predetermined high voltage current is applied to the discharge torch 32,
Arc discharge is generated between the discharge surface 32a of the discharge torch 32 and the tip of the wire 26, and the tip of the wire 26 is heated and melted to form a bonding ball 26c. At this time, the covering material 26b attached around the wire 26
The melt begins to rise upward on the circumferential surface of the wire 26 due to heating. As the coating material 26b melts, a resin pool 45 of the melted coating material 26b is formed around the wire 26, and this resin pool 45 is filled with the wire 26b.
As it gets closer to the top, the surrounding covering material 26b melts and becomes larger.

本実施例によれば、上記ワイヤ２６の途中所定部分にノ
ズル３５より窒素ガス３４が吹き付けられているため、
上記樹脂溜り４５は窒素ガス３４の吹き付は圧により飛
敗される。また、ノズル３５から吹き付けられる窒素ガ
ス３４は、２重管構造の冷却管４１を流れる冷却用の窒
素ガス４２により保冷・冷却効果を高められているため
、キャピラリ２４の先端近傍が上記のアーク放電により
高温環境となっていても、十分に低温の窒素ガス３４の
吹き付けが可能であるため被覆材２６ｂの溶は上がり量
が過多とならず、溶は上がり位置がボンディングボール
２６　Ｃの僅かに上方部分で制御できる。そのため、キ
ャピラリ２４の内部にまで樹脂溜り４５が上昇すること
が抑止され、キャピラリ２４の目詰まりが防止される。According to this embodiment, since the nitrogen gas 34 is sprayed from the nozzle 35 onto a predetermined portion in the middle of the wire 26,
The resin reservoir 45 is blown away by the pressure of the nitrogen gas 34 . In addition, the nitrogen gas 34 blown from the nozzle 35 has a cooling effect enhanced by the cooling nitrogen gas 42 flowing through the cooling tube 41 having a double tube structure, so that the vicinity of the tip of the capillary 24 is exposed to the arc discharge. Even in a high-temperature environment, since it is possible to spray sufficiently low-temperature nitrogen gas 34, the amount of melting of the covering material 26b does not rise to an excessive amount, and the melting rises at a position slightly above the bonding ball 26C. Can be controlled in parts. Therefore, the resin reservoir 45 is prevented from rising to the inside of the capillary 24, and the capillary 24 is prevented from clogging.

さらに、上記のように吹き付けられる窒素ガス３４は、
十分に冷却された状態となっているため、吹き付けによ
り飛散除去された被覆材２６ｂが高温環境下において、
再度ワイヤ本体２６ａに凝固付着することを効果的に防
止される。Furthermore, the nitrogen gas 34 blown as described above is
Since it is in a sufficiently cooled state, the coating material 26b that has been scattered and removed by spraying is
Coagulation and adhesion to the wire body 26a again is effectively prevented.

なお、吹き付けられた窒素ガス３４ならびに飛敗された
被覆ｔ＄　２６　ｂは、たとえば放電トーチ３２等に真
空排気系を設けて除去する構成としてもよい。Note that the sprayed nitrogen gas 34 and the blown coating t$ 26 b may be removed by, for example, providing a vacuum exhaust system in the discharge torch 32 or the like.

次に、上下動ブロック１５が下方に移動され、キャピラ
リ２４が降下されてボンディングボール２６ｃがバッド
４の表面に着地される。ここで、制御部４４の制御によ
りボイスコイルモータ２２が作動を開始されてキャピラ
リ２４の先端に所定の荷重が印加されるとともに、超音
波発振部２３の作動により所定周波数の超音波振動がボ
ンディングアーム２１を伝わり、キャピラリ２４の先端
に印加される。Next, the vertical movement block 15 is moved downward, the capillary 24 is lowered, and the bonding ball 26c lands on the surface of the pad 4. Here, the voice coil motor 22 is started to operate under the control of the control unit 44 to apply a predetermined load to the tip of the capillary 24, and the ultrasonic oscillation unit 23 is operated to generate ultrasonic vibrations of a predetermined frequency on the bonding arm. 21 and is applied to the tip of the capillary 24.

ヒートブロック１０の加熱環境下における上記荷重と超
音波振動との相乗効果によってボンディングボール２６
Ｃはバッド４の表面に接合され、第１ボンデイングが完
了する。Due to the synergistic effect of the above-mentioned load and ultrasonic vibration in the heating environment of the heat block 10, the bonding ball 26
C is bonded to the surface of the pad 4, completing the first bonding.

次に、上下動ブロック１５が上昇されるとともに、ＸＹ
ステージ７のＸＹ力方向の移動によって、キャピラリ２
４はその先端からワイヤ２６をたぐり出しながら、ワイ
ヤ２６をループを描くように張設して、所定のインナー
リード５ａの直上に移動される。Next, the vertical movement block 15 is raised, and the
By moving the stage 7 in the XY force direction, the capillary 2
4 is moved directly above a predetermined inner lead 5a by pulling out the wire 26 from its tip and stretching the wire 26 in a loop.

上下動ブロック１５が下方に移動されると、ワイヤ２６
の途中部分を保持したキャピラリ２４はインナーリード
５ａの所定部位に着地される。ここで、ボイスコイルモ
ータ２２と超音波発振部２３との作動により、キャピラ
リ２４に対して荷重と超音波振動とが再度印加され、キ
ャピラリ２４からたぐり出されたワイヤ２６の途中部分
がインナーリード５ａに超音波接合される。このとき、
ワイヤ２６の周囲に被着された被覆ｔ、ｔ　２６　ｂは
、荷重と超音波振動との印加によりワイヤ２６の周囲か
ら剥離された状態となり、露出状態のワイヤ本体２６ａ
とインナーリード５ａとの表面が直接接触した状態で接
合され、電気的導通が実現される。When the vertical movement block 15 is moved downward, the wire 26
The capillary 24 holding the middle portion is landed at a predetermined portion of the inner lead 5a. Here, due to the operation of the voice coil motor 22 and the ultrasonic oscillator 23, a load and ultrasonic vibration are applied to the capillary 24 again, and the middle part of the wire 26 pulled out from the capillary 24 is moved to the inner lead 5a. are ultrasonically bonded. At this time,
The coatings t and t26b applied around the wire 26 are peeled off from the periphery of the wire 26 due to the application of load and ultrasonic vibration, leaving the exposed wire main body 26a.
The surfaces of the inner lead 5a and the inner lead 5a are joined with each other in direct contact, and electrical continuity is achieved.

次に、クランパ３０によりキャピラリ２４の上方でワイ
ヤ２６が保持された状態で該キャピラリ２４が所定量上
昇することにより、ワイヤ２６の不要部分が切断除去さ
れ、ｌサイクルのワイヤボンディング工程が完了する。Next, with the wire 26 held above the capillary 24 by the clamper 30, the capillary 24 is raised by a predetermined amount, thereby cutting off and removing unnecessary portions of the wire 26, completing the 1-cycle wire bonding process.

上記ワイヤボンディング工程をすべてのパッド４とイン
ナーリード５ａに対して所定サイクル繰り返すことによ
って半導体ペレット３とリードとの電気的導通が達成さ
れる。Electrical continuity between the semiconductor pellet 3 and the leads is achieved by repeating the wire bonding process in a predetermined cycle for all pads 4 and inner leads 5a.

上記ワイヤボンディング工程の後、リードフレーム５は
図示されない金型内に装着され、この金型内に溶融状態
の合成樹脂が高圧注入されることにより、半導体装】２
のパッケージ本体２ａが形成される。このとき、合成樹
脂の高圧注入にともない、ループ状に張設されたワイヤ
２６が注入圧で変形し、隣接するワイヤ２６どうし、半
導体ベレット３の端部あるいはタブ１２と接触状態とな
ることが考えられるが、本実施例によれば上記に説明し
たように保冷・冷却効果を高められた窒素ガス４２の吹
き付けにより、第１ボンデイングの際の被覆材２６ｂの
溶は上がり量がボンディングボール２６ｃの僅かに上方
位置までに適切に制御されている。したがって、張設さ
れたワイヤ２６の大部分が絶縁材料の被覆け２６ｂによ
り覆われており、仮にワイヤ２６どうしが接触状態とな
ったとしても被覆＋４２６ｂを介しての接触であるため
、電気的短絡は生じ得ない。After the wire bonding process, the lead frame 5 is mounted in a mold (not shown), and molten synthetic resin is injected at high pressure into the mold to form a semiconductor device.
A package body 2a is formed. At this time, as the synthetic resin is injected under high pressure, the wire 26 stretched in a loop shape is deformed by the injection pressure, and it is considered that the adjacent wires 26 come into contact with each other, the end of the semiconductor pellet 3, or the tab 12. However, according to this embodiment, as explained above, by spraying the nitrogen gas 42 with enhanced cold preservation and cooling effects, the amount of melting of the coating material 26b during the first bonding is slightly smaller than that of the bonding ball 26c. is properly controlled up to the upper position. Therefore, most of the stretched wires 26 are covered with the sheathing 26b made of an insulating material, and even if the wires 26 come into contact with each other, the contact will be through the sheathing +426b, resulting in an electrical short circuit. cannot occur.

以上のようにして注入された合ｔ７．ｌｉｔ脂が冷却硬
化された後、パッケージ本体２ａと一体となったリード
フレーム５が金型から取り出される。さらに、パッケー
ジ本体２ａの側面から突出されたアウターリード５ｂが
それぞれ電気的に分離加工され、成形加工されることに
より第４図に示されるような半導体装置２が得られる。Injected as above t7. After the lit resin is cooled and hardened, the lead frame 5 integrated with the package body 2a is removed from the mold. Further, the outer leads 5b protruding from the side surface of the package body 2a are electrically separated and molded to obtain a semiconductor device 2 as shown in FIG. 4.

このように、本実施例では、被覆ワイヤによるワイヤボ
ンディングが可能となるため、パッド４とインナ−リー
ド５ａ間をＸ状にクロスさせる結線、あるいは多重結線
等も実質的に可能となる。In this way, in this embodiment, wire bonding using coated wire is possible, so it is practically possible to make an X-shaped cross connection between the pad 4 and the inner lead 5a, or to make multiple connections.

このため、電気的信頼性の高い高集積形半導体装置を得
ることができる。Therefore, a highly integrated semiconductor device with high electrical reliability can be obtained.

以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

たとえば、上記実施例では冷却手段として２重管構造の
冷却管４１を設け、内部に冷却用の窒素ガス４２を流通
させた場合について説明したが、冷却媒体としては、上
記の窒素ガス４２に限られず、他の気体あるいは水等の
液体であってもよい。For example, in the above embodiment, a double-walled cooling pipe 41 is provided as a cooling means, and nitrogen gas 42 for cooling is circulated inside, but the cooling medium is limited to the nitrogen gas 42 described above. Instead, other gases or liquids such as water may be used.

また、気体冷却手段として、２重管構造のものについて
説明したが、たとえば供給管３６の周囲に螺旋状に冷却
管４１を配設したもの、あるいは供給管３６の周囲を断
熱材で囲んだもの、さらには供給管３６の周囲に放熱フ
ィンを設けたもの等、いかなる冷却手段を講じたもので
あってもよい。Further, as the gas cooling means, a double pipe structure has been described, but for example, one in which the cooling pipe 41 is spirally arranged around the supply pipe 36, or one in which the supply pipe 36 is surrounded by a heat insulating material. Furthermore, any cooling means may be used, such as one provided with radiation fins around the supply pipe 36.

また、被覆ワイヤ構造として、金からなるワイヤ本体２
６ａの周面に合成樹脂からなる被覆材２６ｂを被着した
構造のものを説明したが、これに限らずワイヤ本体２６
ａとしては銅（Ｃｕ）またはアルミニウム（Ａｆ）で構
成されたものであってもよい。また被覆材２６ｂとして
合成樹脂の他に、酸化膜等の他の絶縁材料を用いたもの
でもよい。In addition, as a coated wire structure, a wire body 2 made of gold is used.
Although a structure in which a coating material 26b made of synthetic resin is applied to the circumferential surface of the wire body 6a has been described, the wire body 26 is not limited to this.
A may be made of copper (Cu) or aluminum (Af). Further, in addition to synthetic resin, other insulating materials such as an oxide film may be used as the covering material 26b.

以上の説明では主として本発明者によってなされた発明
をその利用分野である、いわゆる半導体装置におけるワ
イヤボンディング技術に適用した場合について説明した
が、これに限定されるものではなく、他の電子機器にお
ける電気的結線を行なう技術にも広く適用することが可
能である。In the above explanation, the invention made by the present inventor was mainly applied to the field of application, which is the wire bonding technology in so-called semiconductor devices, but the present invention is not limited to this, and the invention is not limited to this. It can also be widely applied to techniques for connecting wires.

〔発明の効果〕〔Effect of the invention〕

本願において開示される発明のうち代表的なものによっ
て得られる効果を簡単に説明すれば、下記の通りである
。A brief explanation of the effects obtained by typical inventions disclosed in this application is as follows.

すなわち、ノズルからの気体つ吹き付けにより、ワイヤ
の途中部分における被覆材の溜りを飛散させることが可
能になるとともに、特にノズルの吹出口近傍から気体供
給路にわたって設けられた気体冷却手段によって吹き付
けられる気体の保冷・冷却効果を著しく高めることがで
きる。このため、飛散除去された被覆材の再凝固を防止
できるとともに、ワイヤの途中部分における被覆材の溶
は上がり位置を側御することが可能となり、被覆ワイヤ
による信頼性の高いワイヤボンディングを実現すること
ができる。That is, by blowing gas from the nozzle, it is possible to scatter the accumulation of coating material in the middle part of the wire, and in particular, the gas blowing by the gas cooling means provided from the vicinity of the nozzle outlet to the gas supply path. It is possible to significantly improve the cold storage and cooling effect. Therefore, it is possible to prevent the scattered and removed covering material from re-solidifying, and it is also possible to control the position where the covering material melts in the middle of the wire, realizing highly reliable wire bonding using covered wire. be able to.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例であるワイヤボンディング装
置のキャピラリ近傍を示す説明図、第２図は上記実施例
のワイヤボンディング装置全体を示す概略図、 第３図は上記実施例のワイヤボンディング装置によるワ
イヤボンディング工程を示す説明図、第４図は上記実施
例によって得られる半導体装置を示す概略断面図である
。 １・・・ワイヤボンディング装置、２・・・半導体装置
、２ａ・・・パッケージ本体、３・・・半導体くレット
、４・　・・パッド、５・・　・リードフレーム、５ａ
・・・インナーＩＪ−）’、５ｂ・・・アウターリード
、６・・・ボンディングヘッド、７・・・χＹステージ
、８・・・ボンディングステージ、ｌＯ・・・ヒートブ
ロック、ｌ；　・・・ヒータ、１２・・・タブ、１３・
・・街脂ペースト、１４　・・・パッシベーションｆｆ
、１５・・・上下動ブロック、１６・・・案内軸、１７
・・・サーボモータ、１８・・・ボールねじ機構、２０
・・・回転軸、２１・・・ボンディングアーム、２２・
・・ボイスコイルモータ、２３・・・超音波発振部、２
４・・・キャピラリ、２５・・・ワイヤスプール、２６
・・・ワイヤ、２６ａ・・・ワイヤ本体、２６ｂ・・・
被覆材、２６ｃ・・・ボンディングボール、２７・・・
テンンヨナ、２８・・・ワイヤガイド、３０・・・クラ
ンパ、３１・・・アーク発生装置、３２・・・放電トー
チ、３２ａ・・・放電面、３３・・・トーチモータ、３
４・・・吹き付は用窒素ガス（気体）、３５・・・ノズ
ル、３６・・・供給管（気体供給路）、３７ａ、３Ｔｂ
・＝流量計、３８ａ、３８ｂ・・・ガス源、４０ａ、４
０ｂ・・・冷却機、溝、４１・・・冷却管、４２・・・
冷却用窒素ガス、４３・・・排気管、４４・・・制′ｇ
５部、４５・・・樹脂溜り。 代理人　弁理士　筒　井　大　和 第１図 ２４゛キヤピラリ ２６：４ＬＩ’ＬワイＹ ３２、放電トーチ ６４゛吹き付け／ｎ窒素ガス（気体） ６５　　ノズル ６６：供給管 ３８ａ、３８ｂ：ガスｆｊ ４１°冷却管 ４２゛冷却用窒素ガス 第２図FIG. 1 is an explanatory diagram showing the vicinity of the capillary of a wire bonding apparatus according to an embodiment of the present invention, FIG. 2 is a schematic diagram showing the entire wire bonding apparatus according to the above embodiment, and FIG. 3 is a diagram showing the wire bonding apparatus according to the above embodiment. FIG. 4 is an explanatory view showing the wire bonding process using the apparatus, and is a schematic cross-sectional view showing the semiconductor device obtained by the above embodiment. DESCRIPTION OF SYMBOLS 1... Wire bonding device, 2... Semiconductor device, 2a... Package body, 3... Semiconductor bundle, 4... Pad, 5... Lead frame, 5a
... Inner IJ-)', 5b ... Outer lead, 6 ... Bonding head, 7 ... χY stage, 8 ... Bonding stage, lO ... Heat block, l; ... Heater , 12... tab, 13...
・・Street fat paste, 14 ・・Passivation ff
, 15... Vertical movement block, 16... Guide shaft, 17
... Servo motor, 18 ... Ball screw mechanism, 20
... Rotating shaft, 21... Bonding arm, 22.
...Voice coil motor, 23...Ultrasonic oscillator, 2
4... Capillary, 25... Wire spool, 26
...Wire, 26a...Wire body, 26b...
Covering material, 26c... Bonding ball, 27...
Tenner, 28... Wire guide, 30... Clamper, 31... Arc generator, 32... Discharge torch, 32a... Discharge surface, 33... Torch motor, 3
4... Nitrogen gas (gas) for spraying, 35... Nozzle, 36... Supply pipe (gas supply path), 37a, 3Tb
・=Flowmeter, 38a, 38b...Gas source, 40a, 4
0b...Cooler, groove, 41...Cooling pipe, 42...
Cooling nitrogen gas, 43...exhaust pipe, 44...control'g
Part 5, 45...resin pool. Agent Patent Attorney Daiwa Tsutsui Figure 1 24 Capillary 26: 4 LI'L Y 32, Discharge torch 64 Spray/n Nitrogen gas (gas) 65 Nozzle 66: Supply pipes 38a, 38b: Gas fj 41° cooling Pipe 42゛Nitrogen gas for cooling Figure 2

Claims (1)

【特許請求の範囲】 １、ボンディングツールの先端より突出されたワイヤの
端部をボール状に形成し該ボール状部を半導体ペレット
のパッドに押圧することによりワイヤの一端を結線する
ワイヤボンディング装置であって、ボンディングツール
と、該ボンディングツールの先端より突出されたワイヤ
の端部をボール状に形成する加熱手段と、該ボンディン
グツールの先端から突出されたワイヤの途中部分に対し
て気体供給路を介して気体の吹き付けを行なうノズルと
、少なくともノズルの吹出口近傍から気体供給路にわた
って設けられた気体冷却手段とを備えたワイヤボンディ
ング装置。 ２、上記気体冷却手段が上記気体供給路を形成する気体
供給管の外周に２重管構造で設けられた冷却管により形
成されていることを特徴とする請求項１記載のワイヤボ
ンディング装置。[Claims] 1. A wire bonding device that connects one end of the wire by forming the end of the wire protruding from the tip of a bonding tool into a ball shape and pressing the ball shape against a pad of a semiconductor pellet. There is provided a bonding tool, a heating means for forming the end of the wire protruding from the tip of the bonding tool into a ball shape, and a gas supply path for an intermediate portion of the wire protruding from the tip of the bonding tool. A wire bonding device comprising: a nozzle for blowing gas through the nozzle; and a gas cooling means provided from at least the vicinity of the outlet of the nozzle to a gas supply path. 2. The wire bonding apparatus according to claim 1, wherein the gas cooling means is formed by a cooling pipe provided in a double pipe structure around the outer periphery of the gas supply pipe forming the gas supply path.
JP63085736A 1988-04-06 1988-04-06 Wire bonding equipment Pending JPH01256139A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63085736A JPH01256139A (en) 1988-04-06 1988-04-06 Wire bonding equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63085736A JPH01256139A (en) 1988-04-06 1988-04-06 Wire bonding equipment

Publications (1)

Publication Number Publication Date
JPH01256139A true JPH01256139A (en) 1989-10-12

Family

ID=13867127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63085736A Pending JPH01256139A (en) 1988-04-06 1988-04-06 Wire bonding equipment

Country Status (1)

Country Link
JP (1) JPH01256139A (en)

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