JPH0125429B2 - - Google Patents
Info
- Publication number
- JPH0125429B2 JPH0125429B2 JP56167598A JP16759881A JPH0125429B2 JP H0125429 B2 JPH0125429 B2 JP H0125429B2 JP 56167598 A JP56167598 A JP 56167598A JP 16759881 A JP16759881 A JP 16759881A JP H0125429 B2 JPH0125429 B2 JP H0125429B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- current
- power supply
- measurement
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005259 measurement Methods 0.000 claims description 39
- 238000012545 processing Methods 0.000 claims description 14
- 238000012360 testing method Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 5
- 238000010408 sweeping Methods 0.000 claims 1
- 238000000691 measurement method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000012935 Averaging Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Description
【発明の詳細な説明】
この発明は、半導体素子の電気的特性測定法に
関するものである。以下に半導体素子の一例とし
て太陽電池素子を用いた場合について説明する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for measuring electrical characteristics of semiconductor devices. A case where a solar cell element is used as an example of a semiconductor element will be described below.
第１図は、一般的な太陽電池素子の電圧―電流
特性を求める測定システムのブロツク図である。 FIG. 1 is a block diagram of a measurement system for determining the voltage-current characteristics of a typical solar cell element.
被測定素子１は、ソーラーシミユレータ２によ
り光を照射されながら、出力電圧が可変のプログ
ラマブル電源３によつて動作点を変えられ、電圧
測定器４と電流測定器５により電圧―電流特性が
測定され、データ処理装置６へ出力される。 The device under test 1 is irradiated with light by a solar simulator 2, while its operating point is changed by a programmable power supply 3 with variable output voltage, and the voltage-current characteristics are measured by a voltage measuring device 4 and a current measuring device 5. It is measured and output to the data processing device 6.
一般にソーラーシユミレータ２は、光源ランプ
を直流で点灯し、光出力変動を少なくしている
が、その直流は、一般の商用電源の交流を整流す
ることにより得ているため、その交流の周波数の
電源リツプルが混入し、光出力変動を生じやす
い。ソーラーシユミレータの光出力変動は、その
変動の周期に近い測定時間で測定を行う場合に、
測定値のバラツキという形で悪影響を及ぼす。 Generally, the solar simulator 2 lights the light source lamp with direct current to reduce fluctuations in light output, but since the direct current is obtained by rectifying the alternating current of a general commercial power supply, the frequency of that alternating current is power supply ripples are mixed in, which tends to cause fluctuations in optical output. When measuring the light output fluctuation of a solar simulator at a measurement time close to the period of the fluctuation,
This has an adverse effect in the form of variations in measured values.
この影響を除くには、ソーラーシミユレータの
電源リツプルを完全に除去すればよいが、高価に
なる恐れがあるため、測定器側の測定方法の改良
によつて除去する方が良い。 This effect can be eliminated by completely eliminating the power supply ripple in the solar simulator, but since it may be expensive, it is better to eliminate it by improving the measurement method on the measuring instrument side.
測定値の変動を除去する測定方法として、測定
を複数回くり返し、測定値を平均化する方法があ
る。 As a measurement method for removing fluctuations in measured values, there is a method of repeating measurement multiple times and averaging the measured values.
第２図は、太陽電池素子の電圧―電流特性の一
例であり、測定は、電圧が０の点７から電流が０
の点８までの測定を１回としてくり返される。な
お、図中黒丸は測定点を示す。 Figure 2 shows an example of the voltage-current characteristics of a solar cell element.
The measurement up to point 8 is repeated once. Note that the black circles in the figure indicate measurement points.
しかし、この従来の測定方法は、単に測定をく
り返すだけであるため、測定のくり返しを多くし
て測定値の個数を増すことにより、平均化を向上
させようとすると、測定時間がくり返し回数に比
例して長くなつてしまう。 However, this conventional measurement method simply repeats measurements, so if you try to improve averaging by increasing the number of measurement values by repeating measurements, the measurement time increases with the number of repetitions. It becomes proportionally longer.
また、プログラマブル電源３の電圧変化ステツ
プを一定にしているため、第２図のように、測定
された電圧―電流特性の電流変化の大きい部分９
は、電流変化の小さい部分１０に比べて測定点数
が少なくなる。 In addition, since the voltage change step of the programmable power supply 3 is kept constant, as shown in Fig.
The number of measurement points is smaller than that in the portion 10 where the current change is small.
したがつて、正確な電圧―電流特性を得るため
に、プログラマブル電源３の電圧変化ステツプを
小さくし、電流変化の大きい部分９の測定点数を
多くしようとすると、それ以上に電流変化の小さ
い部分１０の測定点数が多くなつてしまう。 Therefore, in order to obtain accurate voltage-current characteristics, if you try to reduce the voltage change step of the programmable power supply 3 and increase the number of measurement points in the part 9 where the current change is large, the part 10 where the current change is small is larger than that. The number of measurement points increases.
つまり、電流変化の小さい部分１０では、必要
以上の測定を行つていることになり、また、測定
されたデータを処理する場合にも不要なデータを
処理することになり、データ処理時間の無駄遺い
となつてしまう。 In other words, in the portion 10 where the current change is small, more measurements are performed than necessary, and when processing the measured data, unnecessary data is processed, resulting in wasted data processing time. I get used to it.
この発明は、このような点に鑑みてなされたも
ので、１回目の測定において測定される電圧と電
流の変化を判断し、必要なデータのみを取り込む
ことによりデータの数を減らし、さらに、データ
の取り込みを行つた時の電源の設定データを記憶
しておき、２回目以降の測定での電源の設定に、
この設定データを使用することにより、測定の高
速化と測定データの信頼性の向上を図るものであ
る。 This invention was made in view of these points, and it reduces the amount of data by determining the changes in voltage and current measured in the first measurement and importing only the necessary data. Save the power setting data at the time of importing, and use it for the power setting for the second and subsequent measurements.
By using this setting data, it is possible to speed up the measurement and improve the reliability of the measurement data.
以下、第３図によつて動作の説明をする。 The operation will be explained below with reference to FIG.
まず、プログラマブル電源３の出力電圧を０
〔Ｖ〕に設定することにより、被測定素子１の動
作点をP1の位置にし、その点における被測定素
子１の電圧、電流を測定し、それを有効測定デー
タとしてデータ処理装置６に出力するとともに、
P1点におけるプログラマブル電源３の設定デー
タを記憶装置に記憶しておく。 First, set the output voltage of programmable power supply 3 to 0.
By setting [V], the operating point of the device under test 1 is set to the P1 position, the voltage and current of the device under test 1 at that point are measured, and this is output to the data processing device 6 as valid measurement data. At the same time,
P The setting data of the programmable power supply 3 at one point is stored in the storage device.
次に、プログラマブル電源３の出力電圧を、ス
ラツプ電圧Vsだけ増加するように設定すると、
被測定素子１の動作点はP2点になる。 Next, if the output voltage of the programmable power supply 3 is set to increase by the slap voltage Vs,
The operating point of the device under test 1 is point P2 .
そして、その点における被測定素子１の電圧、
電流を測定し、その測定データとすでにデータ処
理装置６に出力した測定データとを比較して電
圧、電流の変化量を求め、電圧の変化量が前もつ
て設定された比較電圧Vdより大きい場合、また
は電流の変化量が前もつて設定された比較電流Id
より大きい場合には、測定データを有効データと
してデータ処理装置６へ出力するとともに、その
点におけるプログラマブル電源３の設定データを
記憶装置に記憶しておく。 Then, the voltage of the device under test 1 at that point,
Measure the current and compare the measured data with the measured data already output to the data processing device 6 to find the amount of change in voltage and current, and if the amount of change in voltage is greater than the preset comparison voltage Vd. , or a comparison current Id with a preset amount of current change
If it is larger, the measured data is output as valid data to the data processing device 6, and the setting data of the programmable power supply 3 at that point is stored in the storage device.
もし、電圧の変化量および電流の変化量が前も
つて設定された電圧Vdまたは電流Idより小さい
場合は、測定データは無効データとして取り扱
い、データ処理装置６へは出力しない。 If the amount of change in voltage and the amount of change in current are smaller than the preset voltage Vd or current Id, the measured data is treated as invalid data and is not output to the data processing device 6.
よつて、P2点においては、測定データはデー
タ処理装置６へ出力されない。 Therefore, measurement data is not output to the data processing device 6 at the P2 point.
以降、同じように、プログラマブル電源３の出
力電圧をステツプ電圧Vsづつ増加しながら、そ
のつど測定、比較を行つて行くと、P3点におい
て初めて電圧の変化量がVd以上になるため、こ
のP3点における測定データが出力されるととも
に、その点でのプログラマブル電源３の設定デー
タが記憶装置に記憶される。 From then on, if you increase the output voltage of the programmable power supply 3 by step voltage Vs and measure and compare each time, the amount of change in voltage becomes more than Vd for the first time at point P3 , so this P The measurement data at the three points are output, and the setting data of the programmable power supply 3 at those points is stored in the storage device.
さらに同じように、プログラマブル電源３の設
定、測定、比較、測定データの出力を行うか否か
の判断を、電流の測定値が０を超すP5点までく
り返てゆき、１回目の測定が終了する。 Furthermore, in the same way, the setting of the programmable power supply 3, measurement, comparison, and judgment as to whether or not to output the measured data are repeated up to P5 points where the measured current value exceeds 0, and the first measurement is finish.
なお、P4点においては、電圧の変動量がVdに
満たないが、電流の変動量がIdを超えているた
め、測定データの出力とプログラマブル電源３の
設定データの記憶は行われる。 Note that at point P4 , the amount of voltage variation is less than Vd, but the amount of current variation exceeds Id, so the measurement data is output and the setting data of the programmable power supply 3 is stored.
次に２回目の測定では、１回目の測定で記憶さ
れたプログラマブル電源３の設定データを用いて
プログラマブル電源３の出力電圧設定を行つて行
き、被測定素子１の電圧、電流の測定およびデー
タ処理装置６への測定データの出力を行う。 Next, in the second measurement, the output voltage of the programmable power supply 3 is set using the setting data of the programmable power supply 3 stored in the first measurement, and the voltage and current of the device under test 1 are measured and data processing is performed. Measurement data is output to the device 6.
３回目以降は、２回目と同じような測定をくり
返す。 From the third time onwards, repeat the same measurements as the second time.
そして、必要な回数まで測定をくり返した後、
データ処理装置６に入力された測定データを、デ
ータ処理装置６によつて各測定点ごとに平均を行
うことにより、ソーラーシミユレータ２の光出力
変動の影響の少ない電圧―電流特性が得られる。 After repeating the measurement as many times as necessary,
By averaging the measurement data input to the data processing device 6 for each measurement point, voltage-current characteristics that are less affected by fluctuations in the optical output of the solar simulator 2 can be obtained. .
以上のような測定方法によると、１回目の測定
においては、第３図の電圧―電流特性の白抜丸の
点および黒丸の点の測定を行うが、２回目以降で
は、白抜丸の点のみ測定を行うため、従来の測定
方法のような、２回目以降もすべての点の測定を
行う方法に比べて、測定速度が速くなる。 According to the measurement method described above, in the first measurement, the points with white circles and the points with black circles in the voltage-current characteristics in Figure 3 are measured, but from the second time onwards, the points with white circles are measured. Since only one point is measured, the measurement speed is faster than a conventional measurement method in which all points are measured from the second time onwards.
しかも、得られる測定結果は、被測定素子の電
圧―電流特性の電圧、電流の変化に応じた測定デ
ータであるため、従来の測定方法に比べて無駄な
データが少なく、データ処理の負担が軽くなり、
総合的な測定速度が速くなる。 Moreover, the measurement results obtained are measurement data that corresponds to changes in the voltage and current of the voltage-current characteristics of the device under test, so compared to conventional measurement methods, there is less unnecessary data and the burden of data processing is lighter. Become,
Overall measurement speed becomes faster.
以上は、この発明の一実施例として太陽電池の
電圧―電流特性を測定する場合について説明した
が、他の任意の半導体素子に対してその電圧―電
流特性を測定する場合にもこの発明を適用するこ
とができる。 The above has described the case of measuring the voltage-current characteristics of a solar cell as an embodiment of the present invention, but the present invention can also be applied to measuring the voltage-current characteristics of any other semiconductor element. can do.
第１図は一般的な太陽電池素子の電圧―電流特
性測定システムを示すブロツク図、第２図は太陽
電池素子の従来の測定方法を説明するための電圧
―電流特性図、第３図はこの発明方法を説明する
ための太陽電池素子の電圧―電流特性図である。
図において、１は被測定太陽電池素子、２はソ
ーラーシミユレータ、３はプログラマブル電源、
４は電圧測定器、５は電流測定器、６はデータ処
理装置である。
Figure 1 is a block diagram showing a general voltage-current characteristic measurement system for solar cell elements, Figure 2 is a voltage-current characteristic diagram for explaining the conventional measurement method for solar cell elements, and Figure 3 is a block diagram showing this system. FIG. 2 is a voltage-current characteristic diagram of a solar cell element for explaining the invention method. In the figure, 1 is a solar cell element to be measured, 2 is a solar simulator, 3 is a programmable power supply,
4 is a voltage measuring device, 5 is a current measuring device, and 6 is a data processing device.
Claims (1)
導体素子に印加する電源装置、この電源装置の電
圧に対応して被測定半導体素子の電圧および電流
を測定する電圧測定器および電流測定器、並びに
測定された電圧および電流のデータを処理するデ
ータ処理装置を備えた測定装置を用い、前記電源
装置の出力電圧の掃引中に測定される被測定半導
体素子の電圧の変化量又は電流の変化量が予め設
定された電圧値又は電流値を超えた場合にのみ測
定データを前記データ処理装置へ出力すると共
に、この時の前記電源装置の設定電圧を記憶して
おき、この記憶された設定電圧に基づいて前記電
源装置の電圧を設定して測定をくり返し行なうこ
とにより、測定データの平均化を行なうようにし
たことを特徴とする半導体素子の特性測定方法。1. A power supply device that applies a variable output voltage that can be swept over time to a semiconductor device under test, a voltage measuring device and a current measuring device that measure the voltage and current of the semiconductor device under test in accordance with the voltage of this power supply device, and Using a measuring device equipped with a data processing device that processes measured voltage and current data, the amount of change in voltage or the amount of change in current of the semiconductor device under test measured while sweeping the output voltage of the power supply device is measured. The measurement data is output to the data processing device only when the voltage value or current value exceeds a preset value, and the set voltage of the power supply device at this time is stored, and the output voltage is calculated based on the stored set voltage. 1. A method for measuring characteristics of a semiconductor device, characterized in that measurement data is averaged by repeatedly performing measurements while setting a voltage of the power supply device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16759881A JPS5868679A (en) | 1981-10-19 | 1981-10-19 | Characteristic measurement of semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16759881A JPS5868679A (en) | 1981-10-19 | 1981-10-19 | Characteristic measurement of semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5868679A JPS5868679A (en) | 1983-04-23 |
| JPH0125429B2 true JPH0125429B2 (en) | 1989-05-17 |
Family
ID=15852731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16759881A Granted JPS5868679A (en) | 1981-10-19 | 1981-10-19 | Characteristic measurement of semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5868679A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102928249B (en) * | 2012-11-26 | 2015-01-21 | 中国人民解放军国防科学技术大学 | System and method for simulating output of solar cell array based on programmable power supply |
| CN103576080A (en) * | 2013-11-15 | 2014-02-12 | 上海华岭集成电路技术股份有限公司 | Chip scanning voltage testing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4828176A (en) * | 1971-08-16 | 1973-04-13 | ||
| JPS50110286A (en) * | 1974-02-06 | 1975-08-30 |
-
1981
- 1981-10-19 JP JP16759881A patent/JPS5868679A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4828176A (en) * | 1971-08-16 | 1973-04-13 | ||
| JPS50110286A (en) * | 1974-02-06 | 1975-08-30 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5868679A (en) | 1983-04-23 |
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