JPH01253268A - Manufacture of solid-state image sensing device - Google Patents
Manufacture of solid-state image sensing deviceInfo
- Publication number
- JPH01253268A JPH01253268A JP63080328A JP8032888A JPH01253268A JP H01253268 A JPH01253268 A JP H01253268A JP 63080328 A JP63080328 A JP 63080328A JP 8032888 A JP8032888 A JP 8032888A JP H01253268 A JPH01253268 A JP H01253268A
- Authority
- JP
- Japan
- Prior art keywords
- film
- reflow
- solid
- melting point
- smear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000002844 melting Methods 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 238000003384 imaging method Methods 0.000 claims description 18
- 230000008018 melting Effects 0.000 claims description 15
- 239000010410 layer Substances 0.000 abstract description 16
- 229910052782 aluminium Inorganic materials 0.000 abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 11
- 230000015556 catabolic process Effects 0.000 abstract description 10
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 abstract description 10
- 229910021342 tungsten silicide Inorganic materials 0.000 abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 9
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 230000003071 parasitic effect Effects 0.000 abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 6
- 239000011229 interlayer Substances 0.000 abstract description 4
- 230000007423 decrease Effects 0.000 abstract description 3
- 229910021332 silicide Inorganic materials 0.000 description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000002411 adverse Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 210000004709 eyebrow Anatomy 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Formation Of Insulating Films (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はＣＣＤ等の固体撮像装置の製造方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a method of manufacturing a solid-state imaging device such as a CCD.
（発明の概要〕
本発明は、電荷転送部に形成された駆動電極上にリフロ
ー膜を形成し、そのリフロー膜の熱処理後接リフロー股
上に配線を行う固体撮像装置の製造方法において、光電
変換領域を除いた領域に高融点金属膜若しくは高融点金
属を含有する膜を遮光膜として形成し、その遮光膜の形
成後にリフロー膜を形成することにより、スミアを防止
しながら微細な配線や眉間耐圧の向上環を実現するもの
である。(Summary of the Invention) The present invention provides a method for manufacturing a solid-state imaging device in which a reflow film is formed on a drive electrode formed in a charge transfer section, and wiring is connected to the reflow crotch after heat treatment of the reflow film. By forming a high melting point metal film or a film containing a high melting point metal as a light shielding film in the area except for This is to realize an improvement ring.
一般に、固体撮像装置においては、光電変換領域の開口
を決めるために遮光膜が形成される。そして、従来の固
体撮像装置では、遮光膜としてアルミ膜が用いられてい
た。Generally, in a solid-state imaging device, a light shielding film is formed to determine the aperture of a photoelectric conversion region. In conventional solid-state imaging devices, an aluminum film has been used as a light shielding film.
第２図は、そのような従来の固体撮像装置の一例の要部
断面図であり、シリコン基板２１上に形成された駆動電
極２２上及びシリコン基板２１の光電変換領域２３（な
お、不純物拡散領域についてはその図示を省略している
。）上には、リフロー膜２４が形成されている。このリ
フロー膜２４の上には、上述の如き遮光膜としてのアル
ミ膜２５が形成されている。ここで、上記リフロー膜２
４は、アルミ膜２５の加工や眉間耐圧の確保等のために
形成されている。FIG. 2 is a cross-sectional view of a main part of an example of such a conventional solid-state imaging device, in which the drive electrode 22 formed on the silicon substrate 21 and the photoelectric conversion region 23 of the silicon substrate 21 (in addition, the impurity diffusion region (The illustration thereof is omitted.) A reflow film 24 is formed thereon. On this reflow film 24, an aluminum film 25 as a light shielding film as described above is formed. Here, the reflow film 2
4 is formed for processing the aluminum film 25 and ensuring pressure resistance between the eyebrows.
また、他の先行する技術としては、第３図に示すように
、シリコン基板３０上の駆動電極３１をタングステンシ
リサイド層のような高融点金属シリサイド等で構成し、
その駆動電極３１の遮光特性を利用する技術がある０例
えば、このような技術は、特開昭５９−１５９５６４号
公報にも記載されている。In addition, as another prior art, as shown in FIG. 3, the drive electrode 31 on the silicon substrate 30 is made of high melting point metal silicide such as a tungsten silicide layer,
There is a technique that utilizes the light-shielding property of the driving electrode 31. For example, such a technique is also described in Japanese Patent Laid-Open No. 159564/1983.
ところが、第２図に示したように、リフロー膜２４上に
アルミ膜２５を遮光膜として形成する技術では、その膜
厚によってスミアの低減と眉間耐圧の確保等を両立させ
ることができない。However, as shown in FIG. 2, with the technique of forming the aluminum film 25 as a light-shielding film on the reflow film 24, it is not possible to reduce smear and ensure glabellar breakdown voltage at the same time due to the thickness of the film.
すなわち、膜厚を厚（した場合には、平坦化や層間耐圧
等の点で有利となるが、電荷転送部への斜め入射光の影
響が大きくなり、スミアが増大することになる。一方、
上記リフロー膜２４の膜厚を薄くした場合には、アルミ
膜２５と下部の駆動電極２２の間の耐圧が劣化し、寄生
容量も増加する。また、可動イオンの進入によって素子
の信転性も低下する。さらに、膜厚が薄い場合には平坦
化が困難となり、アルミ膜２５の加工性も低下すること
になる。That is, if the film thickness is increased, it is advantageous in terms of flattening and interlayer breakdown voltage, but the influence of obliquely incident light on the charge transfer section increases and smear increases.On the other hand,
When the thickness of the reflow film 24 is reduced, the withstand voltage between the aluminum film 25 and the lower drive electrode 22 deteriorates, and the parasitic capacitance also increases. In addition, the reliability of the device also decreases due to the entry of mobile ions. Furthermore, if the film thickness is small, planarization becomes difficult and the workability of the aluminum film 25 is also reduced.
次に、第３図のように、駆動電極３１を高融点金属シリ
サイド等で構成した場合では、遮光特性の向上によるス
ミアの低減と、眉間耐圧の確保等を両立させることがで
きる。しかし、ＣＣＤとする場合では、駆動電極３１を
少なくとも第１１１゜第２層と複数層形成する必要があ
り、従って、高融点金属シリサイドの直接酸化が必要に
なる。ところが、高融点金属シリサイドの直接酸化は容
易でなく、仮にできたとしても良質の絶縁膜が得られな
いことから、駆動電極の各層の間の耐圧が劣化すること
になる。Next, as shown in FIG. 3, when the drive electrode 31 is made of high melting point metal silicide or the like, it is possible to reduce smear due to improved light shielding properties and ensure glabellar breakdown voltage. However, in the case of a CCD, it is necessary to form the drive electrode 31 in multiple layers including at least the 111° second layer, and therefore, direct oxidation of the high melting point metal silicide is required. However, direct oxidation of high-melting point metal silicide is not easy, and even if it were possible to do so, a high-quality insulating film would not be obtained, and the withstand voltage between each layer of the drive electrode would deteriorate.
そこで、本発明は上述の技術的な課題に鑑み、スミアの
低減９層間耐圧の確保、寄生容量の低減。Therefore, in view of the above-mentioned technical problems, the present invention aims to reduce smear, ensure a nine-layer breakdown voltage, and reduce parasitic capacitance.
加工性の向上、偉績性の向上等を実現するような固体撮
像装置の製造方法を提供することを目的とする。It is an object of the present invention to provide a method for manufacturing a solid-state imaging device that improves processability and performance.
上述の課題を解決するために、本発明の固体撮像装置の
製造方法は、電荷転送部上に駆動電極を形成する工程と
、光電変換領域を除いた領域に高融点金属膜若しくは高
融点金属を含有する膜を遮光膜として形成する工程と、
上記遮光膜上にリフロー膜を形成して熱処理する工程と
、上記リフロー膜上に配線を行う工程からなることを特
徴としている。In order to solve the above-mentioned problems, the method for manufacturing a solid-state imaging device of the present invention includes a step of forming a drive electrode on a charge transfer section, and a step of forming a high-melting point metal film or a high-melting point metal in a region other than a photoelectric conversion region. a step of forming the containing film as a light-shielding film;
The method is characterized by comprising a step of forming a reflow film on the light shielding film and subjecting it to heat treatment, and a step of providing wiring on the reflow film.
ここで、上記光電変換領域を除いた領域は、例えば垂直
、水平レジスタ等の駆動電極上の領域やチャンネルスト
ップ傾城であり、フレーム転送方式では蓄積領域とする
こともできる。また、読み出しゲートや過剰電荷の掃き
出しのための領域等を含めても良い。上記高融点金属膜
は、例えばタングステン、モリブデン、タンタル、チタ
ン５ ニオブ等の材料より構成されるものとすることが
でき、上記高融点金属を含有する膜としては、上記高融
点金属のシリサイド膜や、さらに高融点金属シリサイド
膜とポリシリコン膜或いはその他の膜を組合せた膜とす
ることができる。上記リフロー膜は、例えばＰＳＣ；、
Ａｓ５Ｇ、ＢＳＧ、ＢＰＳＧ等の種々の熱により軟化す
る材料膜とすることができる。また、その熱処理は、通
常の電気炉によるものでも良く、ＰＴＡ （ラビッド・
サーマル・アニール）等の手法を用いても良い。Here, the area other than the photoelectric conversion area is, for example, an area on drive electrodes such as vertical and horizontal registers or a channel stop tilted wall, and can also be an accumulation area in the frame transfer method. Further, a read gate, a region for sweeping out excess charge, etc. may be included. The high melting point metal film may be made of a material such as tungsten, molybdenum, tantalum, titanium, niobium, etc. The film containing the high melting point metal may be a silicide film of the high melting point metal, or a film containing the high melting point metal. Furthermore, it is possible to use a combination of a high melting point metal silicide film, a polysilicon film, or other films. The above-mentioned reflow membrane is, for example, PSC;
The film can be made of various materials that soften with heat, such as As5G, BSG, and BPSG. In addition, the heat treatment may be performed using an ordinary electric furnace, or PTA (Rapid).
A method such as thermal annealing) may also be used.
本発明の固体撮像装置の製造方法では、駆動電極の形成
後、リフロー膜を介さずに高融点金属若しくは高融点金
属シリサイド等からなる遮光膜を形成する。従って、電
荷転送部への斜め入射光が減少し、スミアが低減される
。その後、リフロー膜を形成し、熱処理を施し、その平
坦化を図る。In the method for manufacturing a solid-state imaging device of the present invention, after forming the drive electrode, a light-shielding film made of a high-melting point metal, a high-melting point metal silicide, or the like is formed without using a reflow film. Therefore, obliquely incident light on the charge transfer section is reduced, and smear is reduced. Thereafter, a reflow film is formed and heat treated to planarize it.
この時、上記遮光膜が既に設けられているために、その
膜厚は十分に厚いものとすることができ、従って、眉間
耐圧や素子の信顛性の向上、寄生容量の低減を図ること
ができる。At this time, since the light-shielding film is already provided, its film thickness can be made sufficiently thick, and therefore, it is possible to improve the glabella breakdown voltage, the reliability of the element, and reduce the parasitic capacitance. can.
本発明の好適な実施例を図面を参照しながら説明する。 Preferred embodiments of the present invention will be described with reference to the drawings.
本実施例の固体撮像装置の製造方法は、ＣＣＤの製造方
法であって、その駆動電極をポリシリコン層とし、遮光
膜をタングステンシリサイド膜とした例である。以下、
その工程に従うで第１図ａ〜第１図ｄを参照しながら説
明する。なお、シリコン基板１１に形成される不純物拡
散傾城については、各種のものとすることができるため
、その図示を省略する。The method for manufacturing a solid-state imaging device of this embodiment is a method for manufacturing a CCD, and is an example in which a polysilicon layer is used as the drive electrode and a tungsten silicide film is used as the light shielding film. below,
The process will be explained with reference to FIGS. 1a to 1d. It should be noted that the impurity diffusion slope formed in the silicon substrate 11 can be of various types, so illustration thereof is omitted.
（ａｌ まず、第１図ａに示すように、シリコン基板
１１の電荷転送部上に、該シリコン基板ｌｌ上の熱酸化
膜１２を介して、ポリシリコン層からなる駆動電極２を
所要のパターンに形成する。この駆動電極２は、例えば
第１及び第２のポリシリコン層からなるものとすること
ができ、両者の眉間及び各電極表面には酸化１７！５が
形成される。この駆動電極２は、ポリシリコンを材料と
するために、直接酸化から容易に良好な酸化１１！５を
得ることができる。(al First, as shown in FIG. 1a, drive electrodes 2 made of a polysilicon layer are placed in a desired pattern on the charge transfer portion of the silicon substrate 11 via the thermal oxide film 12 on the silicon substrate 11. This drive electrode 2 can be made of, for example, a first and second polysilicon layer, and oxide 17!5 is formed between the eyebrows of both layers and on the surface of each electrode.This drive electrode 2 Because polysilicon is used as the material, good oxidation 11!5 can be easily obtained from direct oxidation.
（ｂｌ 次に、第１図すに示すように、光電変換領域
Ｉ３を除いた領域に高融点金属を含有した遮光膜として
のタングステンシリサイド膜１を選択的に形成する。そ
のタングステンソリサイドｎａ ｉにより光電変換領域
Ｉ３の開口を決定させることができ、電荷転送部への入
射光を遮断させることができる０選択的な形成のための
エツチングは、ドライ、ウェットを問わない。ここで、
上記タングステンシリサイド膜１は、上記駆動電極２を
被覆した酸化膜５を覆うように形成され、この酸化膜５
の膜厚は薄いために、スミアの低減を図ることができる
。(bl) Next, as shown in FIG. 1, a tungsten silicide film 1 as a light-shielding film containing a high melting point metal is selectively formed in the region excluding the photoelectric conversion region I3. The etching for the selective formation of 0 that can determine the opening of the photoelectric conversion region I3 and block the incident light to the charge transfer region may be dry or wet.Here,
The tungsten silicide film 1 is formed to cover the oxide film 5 covering the drive electrode 2.
Since the film thickness is small, smear can be reduced.
ｔｃ＋ このような遮光膜としてのタングステンシリ
サイド膜１を形成した後、第１’５ｃに示すように、全
面にリフロー膜としてのＰＳＧ膜３を形成する。tc+ After forming such a tungsten silicide film 1 as a light shielding film, a PSG film 3 as a reflow film is formed on the entire surface as shown in 1'5c.
このとき、そのＰＳＧ［３のＩ！！厚は、素子の信軒性
、配線層と駆動電極との間の耐圧、配線層の加工性、寄
生容量等を考慮して決めることができ、特にスミアの低
減が上記タングステンシリサイド膜１により行われるた
めに、十分に厚い膜厚とすることができる。At this time, that PSG [I of 3! ! The thickness can be determined by taking into account the reliability of the element, the breakdown voltage between the wiring layer and the drive electrode, the workability of the wiring layer, the parasitic capacitance, etc. In particular, the tungsten silicide film 1 can reduce smear. Therefore, the film thickness can be made sufficiently thick.
そして、そのＰＳＧ＠３の形成後、熱処理を施し、ＰＳ
Ｇ膜３をリフローさせる。このリフローは、平坦化が目
的であり、例えば１０００℃、３０分間程度のもので良
い。また、その熱処理は、赤外線等を利用したＲＴＡ等
であっても良い。After the formation of PSG@3, heat treatment is performed to form PSG@3.
The G film 3 is reflowed. The purpose of this reflow is planarization, and may be performed at, for example, 1000° C. for about 30 minutes. Further, the heat treatment may be RTA using infrared rays or the like.
ｆｄｌ 熱処理により、上記ＰＳＧ膜３をリフローさ
せた後、第１図ｄに示すように、コンタクトホール１４
を所要のところに形成し、アルミ配線層４を形成する。fdl After the PSG film 3 is reflowed by heat treatment, a contact hole 14 is formed as shown in FIG.
are formed at required locations to form an aluminum wiring layer 4.
そして、以下、オーバーコート等を行って固体撮像装置
を完成する。Thereafter, overcoating and the like are performed to complete the solid-state imaging device.
なお、コンタクトホール１４の形成は上記熱処理の前と
しても良く、また、アルミ配ｖＡ層１４が接続する領域
は、図示の如きシリコン基板１１だけに限定されない。Note that the contact hole 14 may be formed before the heat treatment described above, and the region to which the aluminum interconnection layer 14 is connected is not limited to the silicon substrate 11 as shown.
上述の工程により製造される固体撮像装置は、リフロー
膜を介さずに遮光膜（タングステンシリサイド膜１）が
形成されているために、斜めに入射する光の悪影響が抑
えられ、スミアの低減が行われる。また、本実施例の固
体１最像装置の製造方法では、リフロー膜を厚くできる
ことから、平坦化を図ってアルミ配線層４を加工し易く
したり、寄生容量の低下や眉間耐圧の向上を図ることが
できる。また、リフロー膜を厚くできることから、可動
イオンの悪影響も抑制できる。In the solid-state imaging device manufactured by the above-mentioned process, since the light-shielding film (tungsten silicide film 1) is formed without using a reflow film, the adverse effects of obliquely incident light are suppressed and smear is reduced. be exposed. In addition, in the manufacturing method of the solid state 1 imaging device of this embodiment, since the reflow film can be made thicker, it is possible to planarize the aluminum wiring layer 4 to make it easier to process, reduce parasitic capacitance, and improve glabellar breakdown voltage. be able to. Furthermore, since the reflow film can be made thicker, the adverse effects of mobile ions can also be suppressed.
なお、本実施例では、高融点金属を含をする膜としてタ
ングステンシリサイド膜を用いたが、これに限定されず
他の材料を用いることができ、さらに高融点金属膜であ
っても良い。また、本実施例でリフロー膜をＰＳＧ膜と
したが限定されるものではない。また、本発明の固体撮
像装置の製造方法は、上述の実施例に限定されず、その
要旨を逸脱しない範囲での種々の変更が可能である。In this embodiment, a tungsten silicide film was used as the film containing a high melting point metal, but the material is not limited thereto, and other materials may be used, and a high melting point metal film may also be used. Furthermore, although the reflow film in this embodiment is a PSG film, it is not limited thereto. Further, the method for manufacturing a solid-state imaging device according to the present invention is not limited to the above-described embodiments, and various changes can be made without departing from the gist thereof.
本発明の固体撮像装置の製造方法は、上述のように、駆
動電極上にリフロー膜を介さずに遮光膜を設けているた
め、スミアの低減を図ることができる。そして、その遮
光膜によってスミアの低減がなされるため、その遮光膜
上のリフロー膜を厚くすることができ、層間耐圧の確保
、寄生容量の低減、加工性の向上、信ｔ■性の向上等を
実現できる。As described above, in the method for manufacturing a solid-state imaging device of the present invention, since the light shielding film is provided on the drive electrode without using a reflow film, it is possible to reduce smear. Since the light-shielding film reduces smear, the reflow film on the light-shielding film can be thickened, ensuring interlayer breakdown voltage, reducing parasitic capacitance, improving processability, and improving reliability. can be realized.
第１図ａ〜第１図ｄは本発明の固体撮像装置の製造方法
の一例をその製造工程に従って説明するためのそれぞれ
工程断面図、第２図は従来の固体撮像装置の一例を示す
要部断面図、第３図は従来の固体撮像装置の他の一例を
示す要部断面図である。
１・・・タングステンシリサイド膜
２・・・駆動電極
３・・・ＰＳＧ膜
４・・・アルミ配線層
特許出願人 ソニー株式会社
代理人弁理士 小泡 晃（他２名）
Ｎ （ノ
ヘ （へ）1a to 1d are process cross-sectional views for explaining an example of the method for manufacturing a solid-state imaging device according to the present invention according to the manufacturing process, and FIG. 2 is a main part showing an example of a conventional solid-state imaging device. FIG. 3 is a cross-sectional view of a main part of another example of a conventional solid-state imaging device. 1...Tungsten silicide film 2...Drive electrode 3...PSG film 4...Aluminum wiring layer Patent applicant Sony Corporation patent attorney Akira Kobu (and 2 others) N (Nohe)
Claims (1)
領域を除いた領域に高融点金属膜若しくは高融点金属を
含有する膜を遮光膜として形成する工程と、 上記遮光膜上にリフロー膜を形成して熱処理する工程と
、 上記リフロー膜上に配線を行う工程からなることを特徴
とする固体撮像装置の製造方法。[Scope of Claims] A step of forming a drive electrode on the charge transfer section, a step of forming a high melting point metal film or a film containing a high melting point metal as a light shielding film in a region other than the photoelectric conversion region, and the above light shielding step. A method for manufacturing a solid-state imaging device, comprising: forming a reflow film on the film and heat-treating the film; and providing wiring on the reflow film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63080328A JP2851849B2 (en) | 1988-04-01 | 1988-04-01 | Method for manufacturing solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63080328A JP2851849B2 (en) | 1988-04-01 | 1988-04-01 | Method for manufacturing solid-state imaging device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9181541A Division JP2910735B2 (en) | 1997-07-07 | 1997-07-07 | Solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01253268A true JPH01253268A (en) | 1989-10-09 |
| JP2851849B2 JP2851849B2 (en) | 1999-01-27 |
Family
ID=13715190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63080328A Expired - Lifetime JP2851849B2 (en) | 1988-04-01 | 1988-04-01 | Method for manufacturing solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2851849B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05206426A (en) * | 1991-12-10 | 1993-08-13 | Nec Corp | Solid-state image sensing device |
| US5424775A (en) * | 1991-03-06 | 1995-06-13 | Matsushita Electronics Corporation | Solid-state image pickup device and method of manufacturing the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55162233A (en) * | 1979-06-05 | 1980-12-17 | Seiko Epson Corp | Semiconductor device |
| JPS59172763A (en) * | 1983-03-22 | 1984-09-29 | Toshiba Corp | Manufacture of solid-state image pickup device |
| JPS6124273A (en) * | 1984-07-13 | 1986-02-01 | Nec Corp | Solid-state image pickup element |
-
1988
- 1988-04-01 JP JP63080328A patent/JP2851849B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55162233A (en) * | 1979-06-05 | 1980-12-17 | Seiko Epson Corp | Semiconductor device |
| JPS59172763A (en) * | 1983-03-22 | 1984-09-29 | Toshiba Corp | Manufacture of solid-state image pickup device |
| JPS6124273A (en) * | 1984-07-13 | 1986-02-01 | Nec Corp | Solid-state image pickup element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5424775A (en) * | 1991-03-06 | 1995-06-13 | Matsushita Electronics Corporation | Solid-state image pickup device and method of manufacturing the same |
| JPH05206426A (en) * | 1991-12-10 | 1993-08-13 | Nec Corp | Solid-state image sensing device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2851849B2 (en) | 1999-01-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100297038B1 (en) | Solid state image sensor and method for fabracating the same | |
| JPS61141174A (en) | Solid state image pickup device | |
| CN100423280C (en) | Method for manufacturing CMOS image sensor | |
| JP2019054237A (en) | Capacitance element, image sensor, manufacturing method of capacitance element, and manufacturing method of image sensor | |
| JPH05206437A (en) | Solid state image sensor and fabrication thereof | |
| JP4482982B2 (en) | Solid-state imaging device and manufacturing method thereof | |
| JPS61294866A (en) | Charge-coupled type semiconductor device | |
| JPH01253268A (en) | Manufacture of solid-state image sensing device | |
| JPH07326736A (en) | Manufacture of semiconductor device and manufacture of ccd image sensing element | |
| JP2004200321A (en) | Solid state imaging device and method of manufacturing the same | |
| JP2910735B2 (en) | Solid-state imaging device | |
| JP2003224256A (en) | Photoelectric conversion device, solid-state image pickup device, and manufacturing method for the same | |
| JPH10125892A (en) | Manufacture of solid-state image sensor | |
| JPH09283733A (en) | Manufacture of solid-state image pick up device | |
| JP3384509B2 (en) | Solid-state imaging device | |
| JPS6346763A (en) | Solid state image sensor and manufacture thereof | |
| JP2773739B2 (en) | Method for manufacturing solid-state imaging device | |
| JP2003243645A (en) | Solid-state image pickup element and its manufacturing method | |
| JP2009140996A (en) | Solid-state imaging element and its manufacturing method | |
| JP2817404B2 (en) | Method for manufacturing charge transfer device | |
| JPS61198774A (en) | Solid state image pick-up device and manufacture thereof | |
| JPH05136394A (en) | Manufacture of solid-state imaging device and its manufacturing system | |
| JPH023281A (en) | Solid-state imaging device and its manufacture | |
| JPS63285969A (en) | Solid-state image pick-up element | |
| JPH11150260A (en) | Solid-state image-pickup device and manufacture thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071113 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081113 Year of fee payment: 10 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081113 Year of fee payment: 10 |