JPS61141174A - Solid state image pickup device - Google Patents

Solid state image pickup device

Info

Publication number
JPS61141174A
JPS61141174A JP59263366A JP26336684A JPS61141174A JP S61141174 A JPS61141174 A JP S61141174A JP 59263366 A JP59263366 A JP 59263366A JP 26336684 A JP26336684 A JP 26336684A JP S61141174 A JPS61141174 A JP S61141174A
Authority
JP
Japan
Prior art keywords
formed
film
receptive
interlayer
oxidized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59263366A
Inventor
Kazumasa Hasegawa
Hajime Kurihara
Hideaki Oka
Tetsuyoshi Takeshita
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP59263366A priority Critical patent/JPS61141174A/en
Publication of JPS61141174A publication Critical patent/JPS61141174A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14665Imagers using a photoconductor layer

Abstract

PURPOSE:To improve S/N ratio while increasing the saturated light quantity by a method wherein a part of lower electrode of receptive element is oxidized to provide a capacitor in parallel with the receptive between upper and lower electrodes. CONSTITUTION:A non-doped polycrystalline silicon layer 102 is formed on an insulating substrate 101 and after forming a gate insulating film by thermal oxidation, another polycrystalline silicon layer 103 to be a gate electrode is formed and then ion is implanted to provide source and drain electrodes. Firstly after forming an interlayer insulating film 104, a contact hole is made to form a conductive material into a vertical line 105 and then a flattened film 106 serving both as another interlayer film is formed. Secondary after making a contact hole in the interlayer 106, a conductive thin film 100 is formed to be oxidized as an additional capacitor 109 utilizing a receptive film 108 as a mask. Through these procedures, the additional capacitor 109 with high evenness may be formed easily increasing S/N ratio and saturated light quantity.
JP59263366A 1984-12-13 1984-12-13 Solid state image pickup device Pending JPS61141174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59263366A JPS61141174A (en) 1984-12-13 1984-12-13 Solid state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59263366A JPS61141174A (en) 1984-12-13 1984-12-13 Solid state image pickup device

Publications (1)

Publication Number Publication Date
JPS61141174A true JPS61141174A (en) 1986-06-28

Family

ID=17388487

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59263366A Pending JPS61141174A (en) 1984-12-13 1984-12-13 Solid state image pickup device

Country Status (1)

Country Link
JP (1) JPS61141174A (en)

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5899547A (en) * 1990-11-26 1999-05-04 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US5933205A (en) * 1991-03-26 1999-08-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for driving the same
US5956105A (en) * 1991-06-14 1999-09-21 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US5968383A (en) * 1992-06-26 1999-10-19 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus having beam expander
US5990542A (en) * 1995-12-14 1999-11-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US5990491A (en) * 1994-04-29 1999-11-23 Semiconductor Energy Laboratory Co., Ltd. Active matrix device utilizing light shielding means for thin film transistors
US6013928A (en) * 1991-08-23 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having interlayer insulating film and method for forming the same
US6149988A (en) * 1986-09-26 2000-11-21 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US6157428A (en) * 1997-05-07 2000-12-05 Sanyo Electric Co., Ltd. Liquid crystal display
US6159777A (en) * 1993-02-04 2000-12-12 Semiconductor Energy Laboratory Co., Ltd. Method of forming a TFT semiconductor device
US6195139B1 (en) 1992-03-04 2001-02-27 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6204905B1 (en) 1997-11-18 2001-03-20 Sanyo Electric Co., Ltd. Vertical alignment liquid crystal display device having planarized substrate surface
US6225218B1 (en) 1995-12-20 2001-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US6242758B1 (en) 1994-12-27 2001-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device employing resinous material, method of fabricating the same and electrooptical device
US6246458B1 (en) 1997-11-18 2001-06-12 Sanyo Electric Co., Ltd. Method for manufacturing liquid crystal display
US6261856B1 (en) 1987-09-16 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US6563558B2 (en) 1997-11-18 2003-05-13 Sanyo Electric Co., Ltd. Liquid crystal display with light shielding film
US6762813B1 (en) 1996-11-22 2004-07-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of manufacturing the same
US6778231B1 (en) 1991-06-14 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device
US6800875B1 (en) 1995-11-17 2004-10-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display device with an organic leveling layer
US6975296B1 (en) 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US7154147B1 (en) 1990-11-26 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US7163854B2 (en) 1996-11-07 2007-01-16 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of a semiconductor device
US7554616B1 (en) 1992-04-28 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same

Cited By (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6149988A (en) * 1986-09-26 2000-11-21 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US6261856B1 (en) 1987-09-16 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US5905555A (en) * 1990-11-26 1999-05-18 Semiconductor Energy Laboratory Co., Ltd. Active matrix type electro-optical device having leveling film
US5946059A (en) * 1990-11-26 1999-08-31 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US5899547A (en) * 1990-11-26 1999-05-04 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US7154147B1 (en) 1990-11-26 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US5963278A (en) * 1991-03-26 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for driving the same
US5933205A (en) * 1991-03-26 1999-08-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for driving the same
US5956105A (en) * 1991-06-14 1999-09-21 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6778231B1 (en) 1991-06-14 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device
US6975296B1 (en) 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US7928946B2 (en) 1991-06-14 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6013928A (en) * 1991-08-23 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having interlayer insulating film and method for forming the same
US7123320B2 (en) 1992-03-04 2006-10-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6195139B1 (en) 1992-03-04 2001-02-27 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US8035773B2 (en) 1992-03-04 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6618105B2 (en) 1992-03-04 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US7554616B1 (en) 1992-04-28 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US7985635B2 (en) 1992-06-26 2011-07-26 Semiconductor Energy Laboratory Co., Ltd. Laser process
US5968383A (en) * 1992-06-26 1999-10-19 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus having beam expander
US6991975B1 (en) 1992-06-26 2006-01-31 Semiconductor Energy Laboratory Co., Ltd. Laser process
US6440785B1 (en) 1992-06-26 2002-08-27 Semiconductor Energy Laboratory Co., Ltd Method of manufacturing a semiconductor device utilizing a laser annealing process
US6002101A (en) * 1992-06-26 1999-12-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device by using a homogenized rectangular laser beam
US6159777A (en) * 1993-02-04 2000-12-12 Semiconductor Energy Laboratory Co., Ltd. Method of forming a TFT semiconductor device
US7102164B2 (en) 1994-04-29 2006-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a conductive layer with a light shielding part
US6501097B1 (en) 1994-04-29 2002-12-31 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6800873B2 (en) 1994-04-29 2004-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US5990491A (en) * 1994-04-29 1999-11-23 Semiconductor Energy Laboratory Co., Ltd. Active matrix device utilizing light shielding means for thin film transistors
US7423291B2 (en) 1994-04-29 2008-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US8319715B2 (en) 1994-04-29 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Active matrix type liquid crystal display device
US6429053B1 (en) 1994-12-27 2002-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device method of fabricating same, and, electrooptical device
US6242758B1 (en) 1994-12-27 2001-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device employing resinous material, method of fabricating the same and electrooptical device
US6800875B1 (en) 1995-11-17 2004-10-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display device with an organic leveling layer
US6867434B2 (en) 1995-11-17 2005-03-15 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display with an organic leveling layer
US6787887B2 (en) 1995-12-14 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US5990542A (en) * 1995-12-14 1999-11-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7202551B2 (en) 1995-12-14 2007-04-10 Semiconductor Energy Laboratory Co., Ltd. Display device having underlying insulating film and insulating films
US7034381B2 (en) 1995-12-14 2006-04-25 Semiconductor Energey Laboratory Co., Ltd. Semiconductor device
US7750476B2 (en) 1995-12-20 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a reliable contact
US6225218B1 (en) 1995-12-20 2001-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US7470580B2 (en) 1996-11-07 2008-12-30 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of a semiconductor device
US7163854B2 (en) 1996-11-07 2007-01-16 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of a semiconductor device
US7868984B2 (en) 1996-11-22 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of manufacturing the same
US6762813B1 (en) 1996-11-22 2004-07-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of manufacturing the same
US7333169B2 (en) 1996-11-22 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of manufacturing the same
US6157428A (en) * 1997-05-07 2000-12-05 Sanyo Electric Co., Ltd. Liquid crystal display
US6204905B1 (en) 1997-11-18 2001-03-20 Sanyo Electric Co., Ltd. Vertical alignment liquid crystal display device having planarized substrate surface
US6563558B2 (en) 1997-11-18 2003-05-13 Sanyo Electric Co., Ltd. Liquid crystal display with light shielding film
US6362864B2 (en) 1997-11-18 2002-03-26 Sanyo Electric Co., Ltd. Vertical alignment liquid crystal display device having planarized substrate surface
US6246458B1 (en) 1997-11-18 2001-06-12 Sanyo Electric Co., Ltd. Method for manufacturing liquid crystal display

Similar Documents

Publication Publication Date Title
JPH0437170A (en) Manufacture of semiconductor device
JPS58105574A (en) Thin film transistor
JPS58100460A (en) Vertical type metal oxide semiconductor device
JPH03165575A (en) Thin film transistor and manufacture thereof
JPS56126936A (en) Semiconductor device and production thereof
JPS60163455A (en) Read only memory device and manufacture thereof
JPS6286853A (en) Manufacture of semiconductor device
JPH01183853A (en) Thin-film filed-effect transistor and manufacture thereof
JPS5669864A (en) Thin-film transistor
JPS61252667A (en) Thin film transistor and manufacture thereof
JPS63293967A (en) Manufacture of charge storage capacitor for dram
JPS60160169A (en) Mos transistor and manufacture thereof
JPS61141174A (en) Solid state image pickup device
JPS61204976A (en) Thin film transistor device and manufacture thereof
JPS60170972A (en) Thin film semiconductor device
JPS55154762A (en) Semiconductor memory
JPH04176168A (en) Semiconductor memory device and manufacture thereof
JPS6156445A (en) Semiconductor device
JPS583287A (en) Vertical cylindrical mos field effect transistor
JPS5928388A (en) Photoelectric conversion element
JPS6430272A (en) Thin film transistor
JPH04179159A (en) Manufacture of semiconductor device
JPH03174765A (en) Semiconductor memory device and manufacture thereof
GB2016803A (en) Thin film transistor construction and manufacturing method of the same
JPS58138053A (en) Semiconductor device and manufacture thereof