JPH0125235B2 - - Google Patents
Info
- Publication number
- JPH0125235B2 JPH0125235B2 JP57174767A JP17476782A JPH0125235B2 JP H0125235 B2 JPH0125235 B2 JP H0125235B2 JP 57174767 A JP57174767 A JP 57174767A JP 17476782 A JP17476782 A JP 17476782A JP H0125235 B2 JPH0125235 B2 JP H0125235B2
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- silicon layer
- metal electrode
- layer
- microcrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57174767A JPS5963774A (ja) | 1982-10-05 | 1982-10-05 | 薄膜シリコン太陽電池 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57174767A JPS5963774A (ja) | 1982-10-05 | 1982-10-05 | 薄膜シリコン太陽電池 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5963774A JPS5963774A (ja) | 1984-04-11 |
| JPH0125235B2 true JPH0125235B2 (US07655688-20100202-C00086.png) | 1989-05-16 |
Family
ID=15984312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57174767A Granted JPS5963774A (ja) | 1982-10-05 | 1982-10-05 | 薄膜シリコン太陽電池 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5963774A (US07655688-20100202-C00086.png) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61104678A (ja) * | 1984-10-29 | 1986-05-22 | Mitsubishi Electric Corp | アモルフアス太陽電池 |
| JPS61292377A (ja) * | 1985-06-19 | 1986-12-23 | Nippon Denso Co Ltd | アモルフアスシリコン太陽電池 |
| JPH07105509B2 (ja) * | 1985-09-18 | 1995-11-13 | 三洋電機株式会社 | 光起電力装置 |
| JPS634687A (ja) * | 1986-06-25 | 1988-01-09 | Ricoh Co Ltd | 半導体素子の電極 |
| JPS63194372A (ja) * | 1987-02-09 | 1988-08-11 | Fuji Electric Co Ltd | 非晶質光電変換装置 |
| US4790883A (en) * | 1987-12-18 | 1988-12-13 | Porponth Sichanugrist | Low light level solar cell |
| JPH01167061U (US07655688-20100202-C00086.png) * | 1988-05-16 | 1989-11-22 | ||
| JPH0227774A (ja) * | 1988-07-15 | 1990-01-30 | Fuji Electric Co Ltd | 太陽電池装置 |
| EP1265297B1 (en) * | 2000-03-13 | 2007-04-25 | Sony Corporation | Method for the preparaton of an OPTICAL ENERGY TRANSDUCER |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5745980A (en) * | 1980-09-02 | 1982-03-16 | Mitsubishi Electric Corp | Amorphous solar battery and manufacture thereof |
-
1982
- 1982-10-05 JP JP57174767A patent/JPS5963774A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5745980A (en) * | 1980-09-02 | 1982-03-16 | Mitsubishi Electric Corp | Amorphous solar battery and manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5963774A (ja) | 1984-04-11 |
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