JPH01248682A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH01248682A JPH01248682A JP7943088A JP7943088A JPH01248682A JP H01248682 A JPH01248682 A JP H01248682A JP 7943088 A JP7943088 A JP 7943088A JP 7943088 A JP7943088 A JP 7943088A JP H01248682 A JPH01248682 A JP H01248682A
- Authority
- JP
- Japan
- Prior art keywords
- edge
- silicon nitride
- electrode
- face
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000001312 dry etching Methods 0.000 claims abstract description 9
- 238000004544 sputter deposition Methods 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 7
- 238000000992 sputter etching Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000269820 Euthynnus affinis Species 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置の製造方法に関し、製に半導体レ
ーザ・ダイオードの端面反射膜の製法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing an end face reflection film of a semiconductor laser diode.
〔従来の技術〕 “
半導体レーザ・ダイオードの端面反射膜には、シリコン
窒化層等が用いられているが、この反射膜はダイオード
の端面にのみ形成する必要があり、通常、つぎの手法で
形成される。[Prior art] “A silicon nitride layer or the like is used for the end face reflective film of a semiconductor laser diode, but this reflective film needs to be formed only on the end face of the diode, and is usually formed using the following method. be done.
＠３図は半導体レーザ・ダイオードにおける端面反射膜
の従来の製法を説明する模式図で、２００〜４００μｍ
の幅を有するレーザーダイオードの連なったバー１を、
両面をそれより２０〜３０μｍ幅の小さなシリコンバー
２で挾さみ込み、更にこれを、挾さみ込み治具３でまず
固定する。ついでこの同定した治具３をスノ：ツタ装置
のアノード側に取り付け、シリコン窒化膜ターゲット４
をカソードにして、高周波スパッタリングを行ない、レ
ーザ・ダイオード・バー１の端面に反射膜５を形成する
ものである。Figure @3 is a schematic diagram illustrating the conventional manufacturing method of an edge reflection film in a semiconductor laser diode, with a thickness of 200 to 400 μm.
A continuous bar 1 of laser diodes having a width of
Both sides are sandwiched between smaller silicon bars 2 having a width of 20 to 30 μm, and then these are first fixed using a sandwiching jig 3. Next, this identified jig 3 is attached to the anode side of the Suno:Ivy device, and the silicon nitride film target 4 is attached.
A reflective film 5 is formed on the end face of the laser diode bar 1 by high-frequency sputtering using the laser diode bar 1 as a cathode.
しかしながら、この製造方法によると、第４図に示すよ
うに、端面反射膜５は′電極６の周囲にも付着し、廻り
込んだ反射膜７を形成する。このような状態で、ダイオ
ードをヒートシンクに接着すると、接着不良が生じ、接
触抵抗が増大する。従って、接着部における熱抵抗が増
大し、レーザ発振特性が低下するという問題点を生じる
。However, according to this manufacturing method, as shown in FIG. 4, the end face reflective film 5 also adheres to the periphery of the electrode 6, forming a wraparound reflective film 7. If the diode is bonded to the heat sink in such a state, bonding failure will occur and contact resistance will increase. Therefore, there arises a problem that the thermal resistance at the bonded portion increases and the laser oscillation characteristics deteriorate.
本＠咽の目的は、上記の情況ｆこ鑑み、レーザ・ダイオ
ードに２ける端面反射膜の電極周囲への廻り込み問題を
解決した半導体装置の製造方法を提供することである。In view of the above-mentioned circumstances, the purpose of this paper is to provide a method for manufacturing a semiconductor device that solves the problem of the edge reflection film of a laser diode wrapping around the electrode.
本発明によれば、半導体装置の製造方法は、レーザ・ダ
イオード素子の端面にシリコン窒化膜を高周波スパッタ
リングする端面反射膜の形成工程と、前記端面反射膜を
備えるレーザ・ダイオード素子の電極形成面に対するド
ライ・エッチング工程とを含んで構成される。According to the present invention, a method for manufacturing a semiconductor device includes a step of forming an end face reflective film by high-frequency sputtering a silicon nitride film on the end face of a laser diode element, and a step of forming an end face reflective film on an electrode forming face of the laser diode element including the end face reflective film. The process includes a dry etching process.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
本実施例によれば、第３図に示したと同じ〈従来のスパ
ッタ装置にレーザ・ダイオード・バー１をシリコン・バ
ー２で挾み込み、この状態で七のこれを反応性スパッタ
・エツチング装置の中へ電極６側を上にして並べ、フレ
オン・ガス等のプラズマ中でドライ・エッチングを行な
う。According to this embodiment, a laser diode bar 1 is sandwiched between silicon bars 2 in the same conventional sputtering apparatus as shown in FIG. They are arranged with the electrode 6 side facing upward, and dry etching is performed in a plasma of Freon gas or the like.
嬉１図は本発明の一冥施例を示す反応性スパッタ・エツ
チング法によるドライ・エッチング工程図で、レーザ・
ダイオードバー１を反応性スパッタ・エツチング装置の
カソード電極８にセットし、対向電極９との間にフレオ
ン・ガスプラズマを発生させてドライ・エッチングを行
なう。フレオン・ガスは（ＣＦ４＋Ｈ２）または（ＣＦ
４＋Ｏ２）で良い。Figure 1 is a diagram of a dry etching process using a reactive sputter etching method, showing one example of the present invention.
A diode bar 1 is set on a cathode electrode 8 of a reactive sputter etching device, and a Freon gas plasma is generated between it and a counter electrode 9 to perform dry etching. Freon gas is (CF4+H2) or (CF
4+O2) is fine.
この状態でエツチングを行なうと、反応性スパッタ・エ
ツチングの特性から、端面に付着したシリコン窒化膜は
エツチングされずに残り、電極６側に廻り込んだシリコ
ン窒化膜のみが除去される。When etching is performed in this state, due to the characteristics of reactive sputter etching, the silicon nitride film attached to the end face remains unetched, and only the silicon nitride film that has spread to the electrode 6 side is removed.
従って、端面にのみシリコン窒化膜を付着させることが
可能となる。Therefore, it becomes possible to attach the silicon nitride film only to the end faces.
第２図は、本発明の他の実施例を示すイオンミリング法
によるドライ・エッチング工程図を示すものである。本
実施例によれば、イオン・ソース１０に対向したホルダ
ー１１上にレーザ・ダイオ −−ドパ−１を並ベ
アルゴン・イオン等によりスバ、タエ、チングを行なう
。但し、イオンシリング法の場合、エツチングの方向性
は反応性スパッタ・エツチング法より良好ではあるが、
電極６がシリコン窒化膜よりも約３倍速くエツチングさ
れる念め、当初の電極厚を厚くしておくことが会費であ
る。FIG. 2 shows a dry etching process diagram using an ion milling method showing another embodiment of the present invention. According to this embodiment, a laser diode--doper 1 is placed on a holder 11 facing an ion source 10 and is pierced, etched, and etched with parallel Beargon ions or the like. However, in the case of the ion scilling method, although the directionality of etching is better than that of the reactive sputter etching method,
In order to ensure that the electrode 6 is etched about three times faster than the silicon nitride film, it is necessary to increase the initial thickness of the electrode.
以上説明したように、本発明によれば、電極側に廻り込
んだ端面反射膜であるシリコン窒化膜を完全に除去する
ことができる。この結果、ヒートシンクとレーザ・ダイ
オードとの接着は完全なものとなり、電気抵抗も少さく
、かつ熱抵抗も小さくすることができる。従って、接着
不良に伴なう熱抵抗増大はなくなり、レーザの発振特性
の像上は大幅に改善される。As described above, according to the present invention, it is possible to completely remove the silicon nitride film that is the end face reflection film that has gone around to the electrode side. As a result, the adhesion between the heat sink and the laser diode is perfect, and electrical resistance and thermal resistance can also be reduced. Therefore, an increase in thermal resistance due to poor adhesion is eliminated, and the image of the laser oscillation characteristics is significantly improved.
第１図は、本発明の一実施例を示す反応性スパッタエツ
チング法によるドライ・エッチング工程図、第２図は本
発明の他の実施例を示すイオンミリング法によるドライ
・エッチング工程図、第３図は半導体レーザ・ダイオー
ドにおける端面反射膜の従来の形成工程図、第４図は従
来法によって形成される端面反射膜の付着状態図である
。
１°・・・・・レーザ・ダイオード・バー、２・・・・
・・シリコン窒化膜、３・・・・・・挾さみ込み治具、
４・・・・・・シリコン窒化膜ターゲット、５・・・・
・・端面反射膜、６・・・・・・電極、７・・・・・・
廻り込み反射膜、８・・・・・・カソード電極、９・・
・・・・対向電極、１０・・・・・・イオン・ソース、
１１川川ホルダー。
代理人 弁理士 内 原 晋
／Ｌ−Ｆｊ″ｉくオーＬ−ハ゛°−
１２図
） ｂ輸幻擦
４シタコン窒イｄ漠７−グ、ム
傷３図
に１９９力懺 １秘
σ
茶４図FIG. 1 is a diagram of a dry etching process using a reactive sputter etching method showing one embodiment of the present invention, FIG. 2 is a diagram of a dry etching process using an ion milling method showing another embodiment of the present invention, and FIG. The figure is a diagram showing a conventional process for forming an edge reflection film in a semiconductor laser diode, and FIG. 4 is a diagram showing an adhesion state of an edge reflection film formed by the conventional method. 1°...Laser diode bar, 2...
...Silicon nitride film, 3...Pinching jig,
4...Silicon nitride film target, 5...
... Edge reflective film, 6... Electrode, 7...
Surrounding reflective film, 8... Cathode electrode, 9...
...Counter electrode, 10...Ion source,
11 Kawakawa Holder. Agent Patent Attorney Susumu Uchihara / L-Fj″ikuo L-high °- 12 figures) b. figure
Claims (1)
周波スパッタリングする端面反射膜の形成工程と、前記
端面反射膜を備えるレーザ・ダイオード素子の電極形成
面に対するドライ・エッチング工程とを含むことを特徴
とする半導体装置の製造方法。A semiconductor device comprising the steps of forming an end face reflective film by high-frequency sputtering a silicon nitride film on the end face of a laser diode element, and dry etching the electrode forming surface of the laser diode element including the end face reflective film. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7943088A JPH01248682A (en) | 1988-03-30 | 1988-03-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7943088A JPH01248682A (en) | 1988-03-30 | 1988-03-30 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01248682A true JPH01248682A (en) | 1989-10-04 |
Family
ID=13689659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7943088A Pending JPH01248682A (en) | 1988-03-30 | 1988-03-30 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01248682A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4985370A (en) * | 1987-04-16 | 1991-01-15 | U.S. Philips Corporation | Method of manufacturing semiconductor laser device |
| JP2007317804A (en) * | 2006-05-24 | 2007-12-06 | Advanced Telecommunication Research Institute International | Semiconductor laser device, manufacturing method therefor, and semiconductor laser gyro using the same |
| US7960562B2 (en) | 2005-03-31 | 2011-06-14 | Astellas Pharma Inc. | Propane-1,3-dione derivative or salt thereof |
-
1988
- 1988-03-30 JP JP7943088A patent/JPH01248682A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4985370A (en) * | 1987-04-16 | 1991-01-15 | U.S. Philips Corporation | Method of manufacturing semiconductor laser device |
| US7960562B2 (en) | 2005-03-31 | 2011-06-14 | Astellas Pharma Inc. | Propane-1,3-dione derivative or salt thereof |
| JP2007317804A (en) * | 2006-05-24 | 2007-12-06 | Advanced Telecommunication Research Institute International | Semiconductor laser device, manufacturing method therefor, and semiconductor laser gyro using the same |
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