JPH01236675A - Optical semiconductor device - Google Patents

Optical semiconductor device

Info

Publication number
JPH01236675A
JPH01236675A JP63064225A JP6422588A JPH01236675A JP H01236675 A JPH01236675 A JP H01236675A JP 63064225 A JP63064225 A JP 63064225A JP 6422588 A JP6422588 A JP 6422588A JP H01236675 A JPH01236675 A JP H01236675A
Authority
JP
Japan
Prior art keywords
package
welding
main surface
semiconductor device
optical semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63064225A
Other languages
Japanese (ja)
Inventor
Mitsuo Ishii
光男 石井
Toshio Sogo
十河 敏雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63064225A priority Critical patent/JPH01236675A/en
Publication of JPH01236675A publication Critical patent/JPH01236675A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Landscapes

  • Semiconductor Lasers (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE:To prevent welding spatters at the welding of a can so as to obtain an element excellent in reliability by a method wherein a ring-like groove where a flange of the can is fitted is formed at the position on a primary face of a package where the can is welded. CONSTITUTION:A can 10 is welded to a primary face of a package 8 through the intermediary of a flange 14 of the can 10 covering a laser diode chip 1. Here, as a groove 9, whose width is a little larger than that of the flange 14 of the can 10, is provided to the primary face of the package 8 surrounding the center of the package 8 in a ring, welding spatters occurring at the welding of the can 10 can be absorbed by the groove 9. By these processes, welding spatters can be prevented at the welding of a can, so that an optical semiconductor device excellent in reliability can be obtained.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、光半導体装置に係り、特にそのキャンの取
付は構造に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to an optical semiconductor device, and particularly relates to the structure of mounting a can thereon.

(従来の技術〕 第2図は従来のキャンの構成を示す図であり、第3図、
第4図は従来の光半導体装置の断面図を示すものである
。これらの図において、1はレーザダイオードチップ(
通称、LDチップ)で、熱伝導性の良い放熱用ブロック
2に半田付けされ、この放熱用ブロック2を介して、パ
ッケージ8の主面に対し、LDチップ1より放射される
レーザ光13を上方へ取り出すようにマウントされる。
(Prior art) Fig. 2 is a diagram showing the configuration of a conventional can, and Fig. 3 is a diagram showing the configuration of a conventional can.
FIG. 4 shows a cross-sectional view of a conventional optical semiconductor device. In these figures, 1 is a laser diode chip (
The laser beam 13 emitted from the LD chip 1 is soldered to a heat dissipation block 2 with good thermal conductivity, and the laser beam 13 emitted from the LD chip 1 is directed upward to the main surface of the package 8 through the heat dissipation block 2. It is mounted so that it can be taken out.

LDチップ1の後方より放射されるレーザ光13′をモ
ニタするために、パッケージ8の主面に、図のごとくモ
ニタ用のフォトダイオード(通称、PDチップ)がマウ
ントされる。パッケージ8には、電気的に絶縁されたリ
ード4と5.電気的に導通されたり−ド6が接続されて
おり、図示のように、金ワイヤ7により、所望の極性を
得ている。パッケージ8の主面には、キャン10がこの
キャン1oのフランジ14を介して、LDチップ1を被
うように溶接さる。キャン1oの中央部は開口されてお
り、LDチップ1の前方より放射されるレーザ光13を
取り出すために、透明な窓ガラス11が接着剤12によ
り取り付けられている。これによりLDチップ1は外部
とは遮断され、機密封止されている。
In order to monitor the laser beam 13' emitted from the rear of the LD chip 1, a monitoring photodiode (commonly known as a PD chip) is mounted on the main surface of the package 8 as shown in the figure. The package 8 includes electrically insulated leads 4 and 5. The electrode 6 is electrically conductive and connected, and the desired polarity is obtained by a gold wire 7, as shown. A can 10 is welded to the main surface of the package 8 so as to cover the LD chip 1 via the flange 14 of the can 1o. The center of the can 1o is open, and a transparent window glass 11 is attached with an adhesive 12 in order to take out the laser beam 13 emitted from the front of the LD chip 1. As a result, the LD chip 1 is isolated from the outside and hermetically sealed.

パッケージ8には、第3図、第4図に示すように、パッ
ケージ8の主面に段差を有するものと無いものがあり、
キャン10を溶接する上では、当該段差は、キャン10
の位置決めガイドになり、キャッピングが容易に行える
反面、パッケージコストが高くなるデメリットがある。
As shown in FIGS. 3 and 4, the packages 8 include those that have a step on the main surface and those that do not.
When welding the can 10, the step is
Although it can be used as a positioning guide and capping can be easily performed, it has the disadvantage of increasing packaging cost.

キャン10をパッケージ8の主面に溶接する場合、キャ
ン10の溶接飛びの問題がある。第3図のようにパッケ
ージ8の主面にキャン10の位置ガイド用の段差がある
場合には、キャン10の溶接飛びが内部の素子に付着す
ることはないが、パッケージ8の主面のキャン10の外
部に付着することはあり、光ピツクアップに素子を組み
込んで、パッケージ8の主面を位置決めする上で問題と
なる。
When welding the can 10 to the main surface of the package 8, there is a problem that the can 10 may skip welding. If there is a step on the main surface of the package 8 to guide the position of the can 10 as shown in FIG. It may adhere to the outside of the package 10, which poses a problem when installing the device in the optical pickup and positioning the main surface of the package 8.

一方、第4図のように、パッケージコストを下げる薄形
、超小型化を目的として、パッケージ8の主面に段差の
ないパッケージの場合には、キャン10の溶接時の溶接
飛びがキャン10の内部。
On the other hand, as shown in FIG. 4, in the case of a package with no steps on the main surface of the package 8 for the purpose of reducing the package cost and making it thinner and ultra-compact, the weld skip when welding the can 10 is lower than that of the can 10. internal.

外部に発生することがあり、素子の信頼性上重大な問題
がある。
This can occur externally, causing serious problems in terms of device reliability.

この問題を解決するために、第2図のように、キャン1
0のフランジ14部分に突起リング(通称、プロジェク
ションリング)15を設け、溶接時のキャン10へ溶接
飛びを防止していたが、完全なものではなかった。
In order to solve this problem, as shown in Figure 2,
A protrusion ring (commonly known as a projection ring) 15 was provided on the flange 14 of the weld to prevent welding from flying to the can 10 during welding, but this was not perfect.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上記のように構成された従来の光半導体装置は、キャン
10をパッケージ8に溶接する際の、キャン1oの溶接
飛びを完全には防止しきれず、素子の信頼性上大きな問
題点となっていた。
In the conventional optical semiconductor device configured as described above, it was not possible to completely prevent the can 1o from flying when welding the can 10 to the package 8, which caused a major problem in terms of device reliability. .

この発明は、上記のような問題点を解消するためになさ
れたもので、キャンの溶接時の溶接飛びを完全に防止で
き、高信頼度性の光半導体装置を得ることを目的とする
The present invention was made to solve the above-mentioned problems, and an object of the present invention is to completely prevent weld skipping during can welding and to obtain a highly reliable optical semiconductor device.

〔課題を解決するための手段〕[Means to solve the problem]

この発明に係る光半導体装置は、パッケージの主面のキ
ャンを溶接する位置に、キャンのフランジ部分が嵌合す
るリング状の溝を形成したものである。
In the optical semiconductor device according to the present invention, a ring-shaped groove into which the flange portion of the can fits is formed at the position where the can is welded on the main surface of the package.

〔作用〕[Effect]

この発明においては、キャンを位置決め固定するための
リング状の溝を形成したことから、このリング状の溝が
キャンのキャッピング溶接時の位置合わせガイドとして
作用するとともに、主たる目的のキャン溶接時の溶接飛
びが、リング状の溝の段差により完全に抑えられる。
In this invention, since a ring-shaped groove is formed to position and fix the can, this ring-shaped groove acts as a positioning guide during can capping welding, and also serves as a welding guide during can welding, which is the main purpose. Flying is completely suppressed by the step of the ring-shaped groove.

〔実施例〕〔Example〕

以下、この発明の一実施例を図面について説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第1図はこの発明の一実施例を示す光半導体装置の断面
図である。この光半導体装置の構成は、 −第3図、第
4図に示したものと同じであるが、この発明においては
、パッケージ8の主面に、キャン10のフランジ14の
幅よりも少し大きめのリング状の溝9が形成されている
FIG. 1 is a sectional view of an optical semiconductor device showing an embodiment of the present invention. The configuration of this optical semiconductor device is the same as that shown in FIGS. A ring-shaped groove 9 is formed.

上記のように、パッケージ8の主面に、キャン10のフ
ランジ14の幅よりも少し大きめの溝9をパッケージ8
の中心に対しリング状に形成しているために、キャン1
0の溶接時に発生する溶接飛びを溝9部分で完全に吸収
できる。
As mentioned above, a groove 9 slightly larger than the width of the flange 14 of the can 10 is formed on the main surface of the package 8.
Can 1
The groove 9 part can completely absorb the weld skip that occurs when welding 0.

したがって、この発明によるパッケージであれば、従来
のようにキャン10のフランジ14部分に突起リングを
形成する必要もなく、キャン10の製造コストを安くす
ることができる。
Therefore, with the package according to the present invention, there is no need to form a protrusion ring on the flange 14 portion of the can 10 as in the conventional case, and the manufacturing cost of the can 10 can be reduced.

なお、上記実施例では、半導体レーザ装置について説明
したが、LEDの発光装置を始め、PD、APD等の受
光装置でも同様の効果が得られる。
In the above embodiments, a semiconductor laser device has been described, but similar effects can be obtained with light-emitting devices such as LEDs, as well as light-receiving devices such as PDs and APDs.

〔発明の効果) 以上説明したようにこの発明は、パッケージの主面に、
キャンを溶接する際のキャンの溶接飛びを完全に防止す
るために、パッケージの主面のキャンを溶接する位置に
、キャンのフランジ部分が嵌合するリング状の溝を形成
したので、パッケージの主面にキャンを位置決めする段
差のあるパッケージや、コストダウン、小型、薄型を目
的としたパッケージの主面に段差のないパッケージ等に
おいても、このリング状の溝を形成することによリキャ
ン溶接時の溶接飛びを確実に防止でき、信頼性の高い素
子が得られる。
[Effects of the Invention] As explained above, the present invention has a structure in which the main surface of the package is
In order to completely prevent the can from flying when welding the can, a ring-shaped groove into which the flange of the can fits is formed on the main surface of the package at the position where the can is welded. By forming this ring-shaped groove, it is possible to form this ring-shaped groove for packages that have a step on the surface to position the can, or for packages that have no step on the main surface of the package aimed at reducing cost, compactness, and thinness. Weld skipping can be reliably prevented and a highly reliable element can be obtained.

また、この発明のパッケージを用いれば、突起リングは
なくてもよく、さらに、リング状の溝は、キャンのパッ
ケージに対する位置合わせ用ガイドとして作用すること
から、キャンの位置精度のばらつきを十分に抑制できる
効果が得られる。
Furthermore, if the package of the present invention is used, there is no need for a protruding ring, and furthermore, since the ring-shaped groove acts as a guide for positioning the can with respect to the package, variations in the positional accuracy of the can can be sufficiently suppressed. You can get the desired effect.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例を示す光半導体装置の断面
図、第2図は従来のキャンの断面図、第3図、第4図は
従来の光半導体装置を示す断面図である。 図において、1はレーザダイオードチップ、2は放熱用
ブロック、3はフォトダイオードチップ、4,5.6は
リード、7は金ワイヤ、8はパッケージ、9はパッケー
ジの主面に設けられたリング状の溝、10はキャン、1
1は窓ガラス、12は接着剤、13.13’ はレーザ
光、14はキャンのフランジである。 なお、各図中の同一符号は同一または相当部分を示す。 代理人 大 岩 増 雄    (外2名)策1図 第2図 1? 第3図 )A13
FIG. 1 is a sectional view of an optical semiconductor device showing an embodiment of the present invention, FIG. 2 is a sectional view of a conventional can, and FIGS. 3 and 4 are sectional views of a conventional optical semiconductor device. In the figure, 1 is a laser diode chip, 2 is a heat dissipation block, 3 is a photodiode chip, 4, 5.6 are leads, 7 is a gold wire, 8 is a package, and 9 is a ring shape provided on the main surface of the package. groove, 10 is can, 1
1 is a window glass, 12 is an adhesive, 13.13' is a laser beam, and 14 is a flange of a can. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Plan 1 Figure 2 Figure 1? Figure 3) A13

Claims (1)

【特許請求の範囲】[Claims]  パッケージの主面に放熱用ブロックを介して固定され
、前記パッケージの主面に対し上方へ発光する発光素子
と、この発光素子を被うように前記パッケージの主面に
溶接されたキャンとを有し、かつ前記キャンの中央部に
前記発光素子の光を上方へ取り出す透明な窓ガラスを備
えた光半導体装置において、前記パッケージの主面に、
前記キャンを位置決め固定するリング状の溝を設けたこ
とを特徴とする光半導体装置。
The package includes a light emitting element fixed to the main surface of the package via a heat dissipation block and emitting light upward with respect to the main surface of the package, and a can welded to the main surface of the package so as to cover the light emitting element. and an optical semiconductor device comprising a transparent window glass in the center of the can for extracting light from the light emitting element upward, the main surface of the package having:
An optical semiconductor device comprising a ring-shaped groove for positioning and fixing the can.
JP63064225A 1988-03-16 1988-03-16 Optical semiconductor device Pending JPH01236675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63064225A JPH01236675A (en) 1988-03-16 1988-03-16 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63064225A JPH01236675A (en) 1988-03-16 1988-03-16 Optical semiconductor device

Publications (1)

Publication Number Publication Date
JPH01236675A true JPH01236675A (en) 1989-09-21

Family

ID=13251949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63064225A Pending JPH01236675A (en) 1988-03-16 1988-03-16 Optical semiconductor device

Country Status (1)

Country Link
JP (1) JPH01236675A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009116133A1 (en) * 2008-03-18 2009-09-24 三菱電機株式会社 Laser light source module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009116133A1 (en) * 2008-03-18 2009-09-24 三菱電機株式会社 Laser light source module
US8391326B1 (en) 2008-03-18 2013-03-05 Mitsubishi Electric Corporation Laser light source module

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