JPH01232776A - Superconducting thin film element - Google Patents
Superconducting thin film elementInfo
- Publication number
- JPH01232776A JPH01232776A JP63059718A JP5971888A JPH01232776A JP H01232776 A JPH01232776 A JP H01232776A JP 63059718 A JP63059718 A JP 63059718A JP 5971888 A JP5971888 A JP 5971888A JP H01232776 A JPH01232776 A JP H01232776A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- superconducting
- superconducting thin
- mgo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 2
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 229910052693 Europium Inorganic materials 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052689 Holmium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 3
- 239000000395 magnesium oxide Substances 0.000 claims 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims 3
- 229910052765 Lutetium Inorganic materials 0.000 claims 1
- 229910052775 Thulium Inorganic materials 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 5
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005668 Josephson effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005292 diamagnetic effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Containers, Films, And Cooling For Superconductive Devices (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、ジョセフソン接合素子等に用いられろＭｉ主
導薄膜素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION FIELD OF INDUSTRIAL APPLICATION The present invention relates to a Mi-driven thin film device used in Josephson junction devices and the like.
従来の技術
超電導材料は、ｌ）電気抵抗がゼロ、２）完全反磁性、
３）ジョセフソン効果といった他の材料にない特徴をも
っており、電力輸送、発電機あるいは超電導ＬＳＩ、高
速コンピュータ等の幅広い応用が期待されている。最近
、Ｙ Ｂ ａ ２ＣＩＪ ３０７−ｔが液体窒素温度で
超電導特性を示すことが見いだされ、さらにＹを他の希
土類元素（Ｌａ、 Ｎｄ、 Ｓｍ、 Ｅｕ、
Ｇｄ、 Ｄｙ、 Ｈｏ、 Ｅｒ、 Ｔｒｎ、
Ｙ！１゜Ｌ ＩＩ ）で置き換えた材料についても、
超電導吠態となることが確認された。これらの材料の製
造法、物性、応用に関する研究が多くなされている。ま
た、超電導デバイスを開発すうために、半導体基板上へ
の薄膜作製技術の研究開発も盛んに行われている。Conventional technology superconducting materials have l) zero electrical resistance, b) complete diamagnetic properties,
3) It has characteristics not found in other materials, such as the Josephson effect, and is expected to have a wide range of applications such as power transportation, generators, superconducting LSIs, and high-speed computers. Recently, it has been discovered that Y Ba 2CIJ 307-t exhibits superconducting properties at liquid nitrogen temperatures, and Y is further combined with other rare earth elements (La, Nd, Sm, Eu,
Gd, Dy, Ho, Er, Trn,
Y! Regarding the material replaced with 1゜L II),
It was confirmed that it became a superconducting barking state. Much research has been conducted on the manufacturing methods, physical properties, and applications of these materials. Furthermore, in order to develop superconducting devices, research and development of thin film production techniques on semiconductor substrates is actively being conducted.
発明が解決しようとする課題
上記超電導薄膜はＭｇＯ，Ｓ ｒ Ｔ ｉ Ｏ：ｌ、サ
フアイア等の酸化物単結晶を基板にして作製されている
が、金属、半導体、ＳｉＯ２，ガラス上には合成困難で
あるという問題点あった。Problems to be Solved by the Invention The above superconducting thin films are fabricated using oxide single crystals such as MgO, S r T i O:l, and sapphire as substrates, but it is difficult to synthesize them on metals, semiconductors, SiO2, and glass. There was a problem with that.
課題を解決するための手段
基板と、基板上に形成したＭｇＯ薄膜と、ＭｇＯ薄膜上
に形成した超電導薄膜とを有する超電導薄膜素子を構成
し、前記Ｍ ｇ Ｏ７Ｊ膜を（１００）、（１１１）あ
るいは（１１０）に配向させる。Means for Solving the Problems A superconducting thin film element having a substrate, an MgO thin film formed on the substrate, and a superconducting thin film formed on the MgO thin film is constructed, and the M g O7J film is formed by (100), (111) Alternatively, it is oriented in (110).
作用
基板上に超電導薄膜を作製したデバイスにおいて、基板
と超電導薄膜との間に、 （１１１）、 （１００）あ
るいは（１１０）に選択的に再現性よく配向させたＭｇ
Ｏ薄膜を設けることにより、半導体基板やガラス基板に
も容易に超電導薄膜が作製でき、集積化超電導デバイス
も実現できろ。In a device in which a superconducting thin film is fabricated on a working substrate, Mg selectively oriented in (111), (100) or (110) with good reproducibility is placed between the substrate and the superconducting thin film.
By providing an O thin film, superconducting thin films can be easily produced on semiconductor substrates and glass substrates, and integrated superconducting devices can also be realized.
実施例
５ｉ（１００）基板上にＭｇＯ薄膜を高周波マ々″ネト
ロンスパッタリング法により作製した。基への温度を５
００℃とし、雰囲気ガスとしては、Ａｒガス中に０２ガ
スを混入したものを用い、全圧を１ｌＰａとした。Example 5i A thin MgO film was fabricated on a (100) substrate by high-frequency netron sputtering.
The temperature was 00° C., the atmospheric gas was Ar gas mixed with 02 gas, and the total pressure was 1 lPa.
得られた薄膜の結晶方位の決定をＸ線回折で行った結果
、 （１００）配向のＭｇＯ薄膜が得られていることが
明確となフた。上記Ｍ ｇ ＯＦｉｔ膜の上に高周波マ
グネトロンスパッタリング法により、結晶性のＹ Ｂ
ａ ２ＣＵ ｙ０７超電導薄膜を形成した。As a result of determining the crystal orientation of the obtained thin film by X-ray diffraction, it was clear that a (100) oriented MgO thin film had been obtained. Crystalline YB was deposited on the MgOFit film by high-frequency magnetron sputtering.
A 2CU y07 superconducting thin film was formed.
ターゲットには焼結したＹ−Ｂａ−Ｃｕ−０のターゲッ
トを用い、Ａｒと０２の混合ガス雰囲気で作製した。た
とえは、ガス圧力０．５Ｐａ、基板温度７００℃、膜厚
０，５μｒｎの超電導薄膜を作製した。A sintered Y-Ba-Cu-0 target was used as the target, and it was produced in a mixed gas atmosphere of Ar and 02. For example, a superconducting thin film with a gas pressure of 0.5 Pa, a substrate temperature of 700° C., and a film thickness of 0.5 μrn was fabricated.
図は、上記のようにして作製したＹＢａ２Ｃｕ３Ｏ７超
電導薄膜のＸ線回折パターンを示している。The figure shows the X-ray diffraction pattern of the YBa2Cu3O7 superconducting thin film produced as described above.
（００１）配向した結晶性のよい超電導薄膜が得られた
ことがわかる。このようにして得られた薄膜は超電導を
示し、その転移温度は９０Ｆ（であった。It can be seen that a superconducting thin film with (001) orientation and good crystallinity was obtained. The thin film thus obtained exhibited superconductivity, and its transition temperature was 90F.
また、５ｉ（１００）基板上にＭｇＯ薄膜を高周波マグ
ネトロンスパッタリング法により作製するざい、基板温
度を７００℃ここして得られた（１１１）配向あるいは
Ａｒガスのみの雰囲気で得られた（１１０）配向ＭｇＯ
薄膜の上に、ｔｆｌ主導薄膜を形成した。この場合も、
結晶性のよい超電導特性を示す薄膜が得られた。In addition, when producing a MgO thin film on a 5i (100) substrate by high-frequency magnetron sputtering, the (111) orientation obtained by raising the substrate temperature to 700°C or the (110) orientation obtained in an atmosphere of Ar gas only. MgO
A TFL-driven thin film was formed on top of the thin film. In this case too,
A thin film with good crystallinity and superconducting properties was obtained.
発明の効果
本発明によれば、基板上に（１００）、 （１１りある
いは（１１０）配向したＭｇＯ薄膜を作製することここ
より、半導体基板やガラス基板にも容易に結晶性のよい
超電導薄膜が作製でき、集積化超電導デバイスも天川で
きる。Effects of the Invention According to the present invention, by producing a (100), (11) or (110) oriented MgO thin film on a substrate, it is possible to easily form a superconducting thin film with good crystallinity on a semiconductor substrate or a glass substrate. It is possible to fabricate integrated superconducting devices.
図は本発明の一実施例における超電導薄膜素子の薄膜の
Ｘ線回折パターンを示す図である。
代理人の氏名 井理士 中尾敏男 はか１名回折角屑
鎌The figure is a diagram showing an X-ray diffraction pattern of a thin film of a superconducting thin film element in one embodiment of the present invention. Name of agent: Rishi I, Toshio Nakao, Haka1 person Diffraction square scrap
sickle
Claims (2)
薄膜と、前記酸化マグネシウム薄膜上に形成した超電導
薄膜とを有し、前記酸化マグネシウム薄膜が（１００）
、（１１１）あるいは（１１０）に配向していることを
特徴とする超電導薄膜素子。(1) A substrate, a magnesium oxide thin film formed on the substrate, and a superconducting thin film formed on the magnesium oxide thin film, wherein the magnesium oxide thin film is (100)
, (111) or (110) orientation.
＿ｘ（ＬｎはＹ、Ｌａ、Ｎｄ、Ｓｍ、Ｅｕ、Ｇｄ、Ｄｙ
、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ、Ｌｕから選択された少なく
とも一種の金属）で表される組成物であることを特徴と
する請求項１に記載の超電導薄膜素子。(2) The superconducting thin film is LnBa_2Cu_3O_7_-
_x (Ln is Y, La, Nd, Sm, Eu, Gd, Dy
The superconducting thin film element according to claim 1, wherein the superconducting thin film element is a composition represented by at least one metal selected from , Ho, Er, Tm, Yb, and Lu.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63059718A JPH01232776A (en) | 1988-03-14 | 1988-03-14 | Superconducting thin film element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63059718A JPH01232776A (en) | 1988-03-14 | 1988-03-14 | Superconducting thin film element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01232776A true JPH01232776A (en) | 1989-09-18 |
Family
ID=13121262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63059718A Pending JPH01232776A (en) | 1988-03-14 | 1988-03-14 | Superconducting thin film element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01232776A (en) |
-
1988
- 1988-03-14 JP JP63059718A patent/JPH01232776A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0472777A (en) | Substrate for superconducting devices | |
| JPH01232776A (en) | Superconducting thin film element | |
| JPH026394A (en) | Superconductive thin layer | |
| JPS63301424A (en) | Manufacture of oxide superconductor membrane | |
| JP2544759B2 (en) | How to make a superconducting thin film | |
| JPH01111718A (en) | Process for forming superconductive thin film | |
| JP2545423B2 (en) | Composite oxide superconducting thin film and method for producing the same | |
| JPH01125878A (en) | Thin film multilayer superconductor | |
| JPH01140683A (en) | Formation of superconducting thin film | |
| JPH01212215A (en) | Production of thin film of high temperature oxide superconductor | |
| JP2544760B2 (en) | Preparation method of superconducting thin film | |
| JPH01227480A (en) | Manufacture of superconducting thin-film | |
| JPH02217306A (en) | Production of oxide superconductor | |
| JP2544761B2 (en) | Preparation method of superconducting thin film | |
| JPH01107420A (en) | Oxide superconductor | |
| JPH0829938B2 (en) | Composite oxide superconducting thin film and method for producing the same | |
| JPH01170060A (en) | Semiconductor substrate having superconductor layer | |
| JPH0465306A (en) | Oxide superconductor thin film | |
| JPH03232723A (en) | Superconductor | |
| JPH05163100A (en) | Substrate for superconducting device and its production | |
| JPH07106902B2 (en) | Method of manufacturing thin film superconductor | |
| JPH01137685A (en) | Formation of superconducting thin film | |
| JPH043476A (en) | Superconducting device | |
| JPH01111719A (en) | Process for forming superconductive thin film | |
| JPH01170078A (en) | Semiconductor substrate with superconductor layer |