JPH0122724B2 - - Google Patents
Info
- Publication number
- JPH0122724B2 JPH0122724B2 JP56040326A JP4032681A JPH0122724B2 JP H0122724 B2 JPH0122724 B2 JP H0122724B2 JP 56040326 A JP56040326 A JP 56040326A JP 4032681 A JP4032681 A JP 4032681A JP H0122724 B2 JPH0122724 B2 JP H0122724B2
- Authority
- JP
- Japan
- Prior art keywords
- quartz
- jig
- saucer
- wafer
- quartz tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 235000012431 wafers Nutrition 0.000 claims description 47
- 239000004065 semiconductor Substances 0.000 claims description 31
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000010453 quartz Substances 0.000 description 70
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 70
- 238000003780 insertion Methods 0.000 description 6
- 230000037431 insertion Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4032681A JPS57155728A (en) | 1981-03-23 | 1981-03-23 | High temperature treatment device for semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4032681A JPS57155728A (en) | 1981-03-23 | 1981-03-23 | High temperature treatment device for semiconductor |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27918387A Division JPS63153816A (ja) | 1987-11-06 | 1987-11-06 | 半導体ウェハの熱処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57155728A JPS57155728A (en) | 1982-09-25 |
JPH0122724B2 true JPH0122724B2 (sl) | 1989-04-27 |
Family
ID=12577478
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4032681A Granted JPS57155728A (en) | 1981-03-23 | 1981-03-23 | High temperature treatment device for semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57155728A (sl) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4959818A (sl) * | 1972-08-05 | 1974-06-11 | ||
JPS50156871A (sl) * | 1974-06-07 | 1975-12-18 | ||
JPS5425A (en) * | 1977-06-03 | 1979-01-05 | Hitachi Ltd | Method of chamfering glass substrate |
-
1981
- 1981-03-23 JP JP4032681A patent/JPS57155728A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4959818A (sl) * | 1972-08-05 | 1974-06-11 | ||
JPS50156871A (sl) * | 1974-06-07 | 1975-12-18 | ||
JPS5425A (en) * | 1977-06-03 | 1979-01-05 | Hitachi Ltd | Method of chamfering glass substrate |
Also Published As
Publication number | Publication date |
---|---|
JPS57155728A (en) | 1982-09-25 |
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