JPH0122724B2 - - Google Patents
Info
- Publication number
- JPH0122724B2 JPH0122724B2 JP56040326A JP4032681A JPH0122724B2 JP H0122724 B2 JPH0122724 B2 JP H0122724B2 JP 56040326 A JP56040326 A JP 56040326A JP 4032681 A JP4032681 A JP 4032681A JP H0122724 B2 JPH0122724 B2 JP H0122724B2
- Authority
- JP
- Japan
- Prior art keywords
- quartz
- jig
- saucer
- wafer
- quartz tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 235000012431 wafers Nutrition 0.000 claims description 47
- 239000004065 semiconductor Substances 0.000 claims description 31
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000010453 quartz Substances 0.000 description 70
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 70
- 238000003780 insertion Methods 0.000 description 6
- 230000037431 insertion Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は半導体素子製造に使用する半導体ウエ
ハの熱処理技術に用いられる治具に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a jig used in a heat treatment technique for semiconductor wafers used in semiconductor device manufacturing.
［従来技術］
半導体素子の製造においては半導体ウエハの状
態でこれを横形の熱処理炉で高温に加熱し、酸
化、不純物拡散、アニーリング等の処理を行なう
が、このために熱処理炉の炉心石英管、石英受
皿、石英サイドチユーブ管、ウエハ立てかけてお
く石英よりなる支持治具、石英引き出し棒等の石
英からなる治工具類を使用する。[Prior Art] In the manufacture of semiconductor devices, semiconductor wafers are heated to high temperatures in a horizontal heat treatment furnace to undergo treatments such as oxidation, impurity diffusion, and annealing. Jigs and tools made of quartz are used, such as a quartz saucer, a quartz side tube, a quartz support jig for holding the wafer upright, and a quartz pull-out rod.
これらの半導体素子製造用の治工具類は、その
製造工程に於いて一度に２〜３種類を一緒に使用
するため、互に接触し合う事が多い。そのために
その一部が破損して大なり小なりの破片が半導体
ウエハの主面に付着し、その付着した部分が不良
として問題になつていた。特に石英治具類の両端
が多い。 These jigs and tools for manufacturing semiconductor devices often come into contact with each other because two or three types of jigs and tools are used together at a time during the manufacturing process. As a result, a portion of the semiconductor wafer is damaged, and fragments of varying sizes adhere to the main surface of the semiconductor wafer, causing a problem in that the adhered portion is considered defective. In particular, there are many cases at both ends of quartz jigs.
例えば、第１図に示すように高温に熱せられた
電気炉１内に石英管２を入れ、石英ウエハ立て治
具３に加工物（半導体ウエハ）４を立てたものを
石英受皿５に入れて、これを石英管２の入口に当
てて除々にウエハ立て治具３を石英管２内に入
れ、一定時間後石英管引出棒６を使用してウエハ
立て治具３を引き出し、この際にウエハ立て治具
３を一時受皿５に載置せしめる。 For example, as shown in FIG. 1, a quartz tube 2 is placed in an electric furnace 1 heated to a high temperature, and a workpiece (semiconductor wafer) 4 is placed upright in a quartz wafer stand jig 3 and placed in a quartz saucer 5. Apply this to the entrance of the quartz tube 2 and gradually put the wafer stand jig 3 into the quartz tube 2.After a certain period of time, use the quartz tube pull-out rod 6 to pull out the wafer stand jig 3. The standing jig 3 is temporarily placed on the saucer 5.
尚、受皿を用いる方法は、特開昭54−63670号
公報によつて知られている。しかし、受皿の破損
等は全く認識されていない。 Incidentally, a method using a saucer is known from Japanese Patent Laid-Open No. 54-63670. However, no damage to the saucer was noticed at all.
［発明が解決しようとする課題］
半導体ウエハ４をのせた石英ウエハ立て治具
３、石英受皿５び及び石英引出し棒６が移動時に
石英管２の開口と受皿の端面部分７に当り合つて
生じた破片が半導体ウエハ４に付着して汚染し、
半導体製品の特性や信頼性を低下させることにな
つた。[Problems to be Solved by the Invention] This problem occurs when the quartz wafer stand jig 3 on which the semiconductor wafer 4 is placed, the quartz tray 5, and the quartz drawer rod 6 come into contact with the opening of the quartz tube 2 and the end surface portion 7 of the tray during movement. The debris adheres to the semiconductor wafer 4 and contaminates it.
This has led to a decline in the characteristics and reliability of semiconductor products.
本発明の目的は上述の如き欠点を解決するため
の半導体ウエハ用受皿治具を提供するものであ
る。 SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor wafer saucer jig that solves the above-mentioned drawbacks.
［課題を解決するための手段］
上記目的を達成するための本発明の構成は、長
手方向に沿つて複数の半導体ウエハを立てかけ配
置せしめてなるウエハ支持治具を置き横形の熱処
理炉内に案内するための半導体ウエハ受皿治具で
あつて、その受皿治具における熱処理炉入口側に
端部は下方へわん曲したラツパ状となしているこ
とを特徴とする半導体ウエハ用受皿治具にある。[Means for Solving the Problems] In order to achieve the above object, the present invention has a configuration in which a wafer support jig, in which a plurality of semiconductor wafers are arranged vertically in a vertical direction, is placed and guided into a horizontal heat treatment furnace. The semiconductor wafer receiving plate jig is characterized in that the end portion of the receiving plate jig on the inlet side of a heat treatment furnace is curved downward into a floppy shape.
［作用］
本発明の構成によれば、管および受皿の破損や
異物発生がなくなり、半導体ウエハへの破片、異
物付着がなくなる。[Function] According to the configuration of the present invention, damage to the tube and the saucer and generation of foreign matter are eliminated, and debris and foreign matter adhesion to the semiconductor wafer are eliminated.
［実施例］ 以下、実施例を図面を用いて従つて詳述する。[Example] Hereinafter, embodiments will be described in detail with reference to the drawings.
第２図は石英管２の断面図を示し、その開口部
半導体ウエハ挿入口をラツパ状に開いた形状２Ａ
としたものである。 FIG. 2 shows a cross-sectional view of the quartz tube 2, which has a shape 2A in which the semiconductor wafer insertion port is opened in the shape of a lattice.
That is.
一方、第３図は本発明にかかわる石英受皿５を
上部より見た平面図を示す。この石英受皿５は長
手方向に沿つて複数の半導体ウエハを立てかけ配
置せしめてなるウエハ支持治具（第１図参照）を
置き、横形の熱処理炉内に案内する。この石英受
皿５は石英管１と突き合せる一端部５Ａを下方へ
わん曲させてラツパ状に開いた形状としたもので
ある。なお、５Ｂは作業者が持つための取つ手で
ある。そして、５Ｃ，５Ｄは石英受皿５の長手方
向側端部である。 On the other hand, FIG. 3 shows a plan view of the quartz saucer 5 according to the present invention viewed from above. A wafer support jig (see FIG. 1) on which a plurality of semiconductor wafers are placed leaning against each other along the longitudinal direction is placed on this quartz tray 5, and the tray is guided into a horizontal heat treatment furnace. This quartz saucer 5 has one end 5A that abuts against the quartz tube 1 bent downward to open into a flap shape. Note that 5B is a handle for the operator to hold. Further, 5C and 5D are the longitudinal side ends of the quartz saucer 5.
第４図は石英管２の他の例を示し、その開口部
にリング形に曲げた石英丸棒８を溶着してＲを付
けたものである。 FIG. 4 shows another example of the quartz tube 2, in which a round quartz rod 8 bent into a ring shape is welded to the opening and rounded.
第５図は第３図に対応する石英受皿５の斜視図
である。 FIG. 5 is a perspective view of the quartz saucer 5 corresponding to FIG. 3.
第６図は本発明による半導体高温処理装置にお
いて使用する溝を有するウエハ立て石英治具３を
示す。この治具３に対し、半導体ウエハ４が図の
ように溝１１内に挿入され、立てかけられる。ま
た、第７図はウエハ立て石英治具を石英管に対
し、搬出入するための引出し棒６を示している。
なお、これら治具においては、石英管２や受皿５
に接触する角部１０や、半導体ウエハに接触する
石英治具３の溝部１１やＲを付けている。 FIG. 6 shows a wafer stand quartz jig 3 having grooves used in the semiconductor high temperature processing apparatus according to the present invention. A semiconductor wafer 4 is inserted into the groove 11 and placed against the jig 3 as shown in the figure. Further, FIG. 7 shows a pull-out rod 6 for carrying the wafer stand quartz jig into and out of the quartz tube.
In addition, in these jigs, the quartz tube 2 and the saucer 5
The corner portion 10 that contacts the semiconductor wafer and the groove portion 11 and R of the quartz jig 3 that contact the semiconductor wafer are provided.
第８図は第２図に示した石英管に対する第３図
および第５図に示した石英受皿の使用時の一形態
を示すものである。すなわち、受皿５を石英管２
の挿入口２Ａに当接させ、引出し棒６を矢印Ａの
如き方向に移動させ、半導体ウエハ４が支持され
ているウエハ立て石英治具３を石英管２内に挿入
する。しかる後、半導体ウエハ４を管内において
加熱処理する。 FIG. 8 shows one form of use of the quartz saucer shown in FIGS. 3 and 5 for the quartz tube shown in FIG. 2. In other words, the saucer 5 is replaced by the quartz tube 2.
The wafer stand quartz jig 3 on which the semiconductor wafer 4 is supported is inserted into the quartz tube 2 by moving the pull-out rod 6 in the direction of arrow A. Thereafter, the semiconductor wafer 4 is heat-treated in the tube.
また、第９図は第４図に示した石英管に対する
第３図および第５図に示した石英受皿の使用時の
一形態を示すものである。すなわち、受皿５を石
英管２の開口部（挿入口）に設けられた石英丸棒
８に当接させる。この時、ウエハ立て石英治具３
の挿入に影響される石英管２の開口底部での当接
位置は、図示したように石英丸棒８の下部８ａと
受皿５の内壁曲部５ａのところとなり、ウエハ立
て石英治具３の底部よりも下方に位置されること
は明らかであり、このためウエハ立て石英治具３
は、従来のように石英管の開口部端に当りにくく
なる。また、当つてもその石英管の開口部端が石
英丸棒により面取り加工となつているために破損
するようなことがなくなる。この結果、ウエハ立
て石英治具３は石英管２内にスムーズに挿入され
ることになる。 Further, FIG. 9 shows one form of use of the quartz saucer shown in FIGS. 3 and 5 for the quartz tube shown in FIG. 4. That is, the saucer 5 is brought into contact with the quartz round bar 8 provided at the opening (insertion port) of the quartz tube 2 . At this time, wafer stand quartz jig 3
The contact position at the bottom of the opening of the quartz tube 2, which is affected by the insertion of the quartz tube 2, is the lower part 8a of the quartz round bar 8 and the inner wall curved part 5a of the saucer 5, as shown in the figure, and the bottom of the wafer stand quartz jig 3. It is clear that the wafer is placed lower than the wafer stand quartz jig 3.
is less likely to hit the opening end of the quartz tube as in the conventional case. Further, even if the quartz tube is hit, it will not be damaged because the opening end of the quartz tube is chamfered with a quartz round rod. As a result, the wafer stand quartz jig 3 can be smoothly inserted into the quartz tube 2.
［発明の効果］
(1) 本発明の端部ラツパ状の受皿治具の使用によ
れば、半導体ウエハ支持治具を熱処理炉内の石
英管へ挿入する時に、その半導体ウエハ支持治
具を石英管へ案内するためにラツパ状の受皿治
具をその石英管に当接させても、それらの接触
部分は半導体ウエハ支持治具より下方に位置
し、かつそれらが互いに当つても、石英管入口
端はラツパ状の曲部になぞられるために接触衝
撃が緩和され、その石英管端の破損がなくな
り、もし仮りにあつてもその破片の量が少な
く、半導体ウエハへの影響は少ない。[Effects of the Invention] (1) According to the use of the saucer jig having a ragged end according to the present invention, when inserting the semiconductor wafer support jig into the quartz tube in the heat treatment furnace, the semiconductor wafer support jig is inserted into the quartz tube. Even if a rattle-shaped saucer jig is brought into contact with the quartz tube in order to guide it into the tube, their contact portions will be located below the semiconductor wafer support jig, and even if they touch each other, the quartz tube entrance Since the end is shaped like a curved part, contact impact is alleviated, and the end of the quartz tube is not damaged, and even if it were, the amount of fragmentation is small and the impact on the semiconductor wafer is small.
(2) 本発明の受皿治具はラツパ状に下方へわん曲
しているため、本願図面第８図に示す如く石英
治具３を石英管２内にスライド挿入する際に、
ゴミ、チリあるいは石英治具４のこすれ異物を
石英管２内にまき込むことがなくなる。(2) Since the saucer jig of the present invention is curved downward in a flat shape, when sliding the quartz jig 3 into the quartz tube 2 as shown in Figure 8 of the drawings of the present application,
Dust, dirt, or foreign matter caused by rubbing of the quartz jig 4 will not be mixed into the quartz tube 2.
(3) 受皿の石英管との当接端部をラツパ状に下方
へわん曲させたことにより、石英管との当接案
内がし易く石英管内へのウエハ立て石英治具４
の挿入の効率向上をはかることができる。(3) The end of the saucer that comes into contact with the quartz tube is curved downward in a curved shape, making it easier to guide the wafer into contact with the quartz tube.
The insertion efficiency can be improved.
第１図は従来の半導体高温加熱処理装置の使用
時の一形態を示す断面図。第２図は本発明に使用
される石英管の断面図。第３図は本発明である受
皿の平面図。第４図は本発明に使用される石英管
の断面図。第５図は第３図に示した受皿の斜視
図。第６図は本発明に使用されるウエハ立て石英
治具の断面図。第７図は本発明に使用される引出
し棒の断面図。第８図は本発明の受皿を用いてウ
エハ挿入の一形態を示す断面図。第９図は本発明
の受皿治具を用いてのウエハ挿入の他の形態を示
す断面図。
１……電気炉、２……石英管、３……石英ウエ
ハ立て治具、４……ウエハ、５……石英受皿、５
Ａ……ラツパ状わん曲部、５Ｂ……取つ手、５
Ｃ，５Ｄ……長手方向側端部、６……石英引出
棒、７……端面部分、８，９……リング状石英管
丸棒、１０……角部、１１……溝部。
FIG. 1 is a cross-sectional view showing one form of a conventional semiconductor high-temperature heat treatment apparatus in use. FIG. 2 is a cross-sectional view of a quartz tube used in the present invention. FIG. 3 is a plan view of the saucer according to the present invention. FIG. 4 is a sectional view of a quartz tube used in the present invention. FIG. 5 is a perspective view of the saucer shown in FIG. 3. FIG. 6 is a cross-sectional view of a wafer stand quartz jig used in the present invention. FIG. 7 is a sectional view of a pull-out rod used in the present invention. FIG. 8 is a sectional view showing one form of wafer insertion using the tray of the present invention. FIG. 9 is a sectional view showing another form of wafer insertion using the saucer jig of the present invention. 1... Electric furnace, 2... Quartz tube, 3... Quartz wafer stand jig, 4... Wafer, 5... Quartz saucer, 5
A...Ratsupa-shaped curved part, 5B...Handle, 5
C, 5D... Longitudinal side end, 6... Quartz pull-out rod, 7... End face portion, 8, 9... Ring-shaped quartz tube round bar, 10... Corner, 11... Groove.
Claims (1)
かけ配置せしめてなるウエハ支持治具を置き横形
の熱処理炉内に案内するための半導体ウエハ用受
皿治具であつて、熱処理炉入口側のその受皿治具
の端部は下方へわん曲したラツパ状となしている
ことを特徴とする半導体ウエハ用受皿治具。1 A semiconductor wafer saucer jig for placing and guiding a wafer support jig in which a plurality of semiconductor wafers are placed upright along the longitudinal direction into a horizontal heat treatment furnace, the saucer jig on the inlet side of the heat treatment furnace. 1. A saucer jig for semiconductor wafers, characterized in that the end of the tool is curved downward in a lattice shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4032681A JPS57155728A (en) | 1981-03-23 | 1981-03-23 | High temperature treatment device for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4032681A JPS57155728A (en) | 1981-03-23 | 1981-03-23 | High temperature treatment device for semiconductor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27918387A Division JPS63153816A (en) | 1987-11-06 | 1987-11-06 | Heat treatment of semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57155728A JPS57155728A (en) | 1982-09-25 |
| JPH0122724B2 true JPH0122724B2 (en) | 1989-04-27 |
Family
ID=12577478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4032681A Granted JPS57155728A (en) | 1981-03-23 | 1981-03-23 | High temperature treatment device for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57155728A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4959818A (en) * | 1972-08-05 | 1974-06-11 | ||
| JPS50156871A (en) * | 1974-06-07 | 1975-12-18 | ||
| JPS5425A (en) * | 1977-06-03 | 1979-01-05 | Hitachi Ltd | Method of chamfering glass substrate |
-
1981
- 1981-03-23 JP JP4032681A patent/JPS57155728A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4959818A (en) * | 1972-08-05 | 1974-06-11 | ||
| JPS50156871A (en) * | 1974-06-07 | 1975-12-18 | ||
| JPS5425A (en) * | 1977-06-03 | 1979-01-05 | Hitachi Ltd | Method of chamfering glass substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57155728A (en) | 1982-09-25 |
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