JPH01219819A - Waveguide type optical modulator and its manufacture - Google Patents
Waveguide type optical modulator and its manufactureInfo
- Publication number
- JPH01219819A JPH01219819A JP63044511A JP4451188A JPH01219819A JP H01219819 A JPH01219819 A JP H01219819A JP 63044511 A JP63044511 A JP 63044511A JP 4451188 A JP4451188 A JP 4451188A JP H01219819 A JPH01219819 A JP H01219819A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- groove
- refractive index
- optical modulator
- type optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 230000003287 optical effect Effects 0.000 title claims description 31
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 230000007423 decrease Effects 0.000 abstract 1
- 238000013459 approach Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 3
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
- G02F1/0356—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure controlled by a high-frequency electromagnetic wave component in an electric waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
- G02F1/2255—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure controlled by a high-frequency electromagnetic component in an electric waveguide structure
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
光通信システム等に利用される導波路型光変調器及びそ
の製造方法に関し、
簡単な製造プロセスを用いて、変調帯域の広帯域化を実
現できることを目的とし、
導波路の形成された基板上に、該導波路に対応して電極
を設けてなる導波路型光変調器において、前記基板に対
し前記電極下に溝を設けるように構成し、
また、基板に導波路を形成し、該導波路に対応して電極
を形成することにより導波路型光変調器を得る導波路型
光変調器の製造方法において、前記基板に対し、その端
面から前記電極下にかけてカッティングソーで溝を形成
する工程を備えるように構成する。[Detailed Description of the Invention] [Summary] Regarding a waveguide type optical modulator used in optical communication systems, etc. and its manufacturing method, the present invention aims to realize a wide modulation band using a simple manufacturing process. , a waveguide type optical modulator comprising a substrate on which a waveguide is formed, and an electrode corresponding to the waveguide provided thereon, wherein the substrate is configured such that a groove is provided under the electrode; In a method for manufacturing a waveguide type optical modulator in which a waveguide type optical modulator is obtained by forming a waveguide on the substrate and forming an electrode corresponding to the waveguide, The structure includes a step of forming grooves using a cutting saw.
本発明は、光通信システム等に利用される導波路型光変
調器及びその製造方法に関する。The present invention relates to a waveguide type optical modulator used in optical communication systems and the like, and a method for manufacturing the same.
近年、数Ｇ ｂ ／ ｓ以上の変調速度を持つ光通信シ
ステムが活発に研究されており、例えばＬｉＮｂＯ３導
波路を用いた導波路型光変調器は上記のような高速変調
に有望と考えられている。In recent years, optical communication systems with modulation speeds of several Gb/s or more have been actively researched, and for example, waveguide-type optical modulators using LiNbO3 waveguides are considered promising for the above-mentioned high-speed modulation. There is.
従来の導波路型光変調器の一例として、マンハツエンダ
型光変調器の構成を第３図に示す。同図（ａ）は斜視図
であり、同図（′ｂ）はそのＡ−Ａ拡大断面図である。As an example of a conventional waveguide type optical modulator, the configuration of a Mannha-Zender type optical modulator is shown in FIG. Figure (a) is a perspective view, and figure ('b) is an enlarged sectional view taken along line AA.
同図において、基板１はＺ板ＬｉＮｂＯ５からなり、そ
の所定領域にＴｉ拡散を施すことにより導波路２が形成
されている。更に、基板１上には、導波路２のうちの分
岐された平行な２本の導波路２ａ、２ｂに対応して、一
対の非対称な電極３ａ、３ｂからなる進行波電極が配設
されている。In the figure, a substrate 1 is made of a Z-plate LiNbO5, and a waveguide 2 is formed by diffusing Ti in a predetermined region thereof. Furthermore, traveling wave electrodes consisting of a pair of asymmetrical electrodes 3a and 3b are disposed on the substrate 1, corresponding to the two branched parallel waveguides 2a and 2b of the waveguide 2. There is.
ここに示した光変調器では、上記進行波電極の長さ２が
例えば２ｃＩＩＩと長（形成されており、一方の電極３
ａに対し導波路２中の光波の進行方向と同一方向にマイ
クロ波を伝播させて光変調を行う。In the optical modulator shown here, the length 2 of the traveling wave electrode is, for example, 2cIII (formed), and one electrode 3
Optical modulation is performed by propagating a microwave in the same direction as the traveling direction of the light wave in the waveguide 2 with respect to a.
すなわち、上記のマイクロ波に含まれる変調信号に応じ
て、２本の導波路２ａ、２ｂ中を伝播する光波に「０」
もしくは「π」の位相差を生じさせ、これらの光波が合
流（干渉）して得られる強弱の光を変調光として出力す
るものである。That is, depending on the modulation signal included in the microwave, the light waves propagating through the two waveguides 2a and 2b are set to "0".
Alternatively, it generates a phase difference of "π" and outputs the light of strength and weakness obtained by merging (interfering) these light waves as modulated light.
第３図に示したようなＬｉＮｂＯ５導波路を利用した光
変調器では、光波の屈折率が約２．１４であるのに対し
、マイクロ波の屈折率は約３〜４と大きい。In an optical modulator using a LiNbO5 waveguide as shown in FIG. 3, the refractive index of light waves is about 2.14, whereas the refractive index of microwaves is as large as about 3 to 4.
ここでマイクロ波の屈折率を問題にするのは、マイクロ
波が電極から基板内へ深く染み出しているためである。The reason why the refractive index of microwaves is a problem here is that microwaves seep deeply into the substrate from the electrodes.
すると、上記の屈折率差から、光波とマイクロ波の間に
は速度差が生じることになる。Then, due to the above refractive index difference, a speed difference will occur between the light wave and the microwave.
このような速度差があると、特に、上述したような、進
行波電極を持つものでは、その長い電極下において光波
が変調信号を追い越してしまうような場合が考えられる
ため、このようなことのないように変調速度には限界を
設けなければならなかった。すなわち、変調帯域が狭く
限定されるという問題点があった。If there is such a speed difference, especially in a device with a traveling wave electrode as mentioned above, there is a possibility that the light wave may overtake the modulation signal under the long electrode. We had to set a limit on the modulation speed to avoid this. That is, there was a problem in that the modulation band was narrowly limited.
なお、マイクロ波に対するＬｉＮｂ０．導波路の屈折率
を小さくする目的で、基板全体の厚さを数１０μｍ程度
に薄＜シようとする提案もなされている。Note that LiNb0. In order to reduce the refractive index of the waveguide, proposals have been made to reduce the thickness of the entire substrate to about several tens of micrometers.
しかし、基板全体をこのように薄く形成することは製造
上極めて困難であり、しかも機械的強度が非常に弱くな
るため通常の使用に耐えうるちのでなくなってしまう。However, it is extremely difficult to make the entire substrate thin in this way, and the mechanical strength becomes extremely weak, making it impossible to withstand normal use.
本発明は、上記問題点に鑑み、簡単な製造プロセスを用
いて、変調帯域の広帯域化を実現できる導波路型光変調
器及びその製造方法を提供することを目的とする。SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide a waveguide optical modulator that can widen the modulation band using a simple manufacturing process, and a method for manufacturing the same.
本発明の導波路型光変調器は、導波路及び電極の形成さ
れた基板に対し、上記電極下に溝を設けたものである。The waveguide type optical modulator of the present invention has a substrate on which a waveguide and an electrode are formed, and a groove is provided under the electrode.
また、本発明の導波路型光変調器の製造方法は、導波路
及び電極の形成された基板に対し、その端面から上記電
極下にかけてカッティングソーで溝を形成する工程を備
えたものである。Further, the method for manufacturing a waveguide type optical modulator of the present invention includes the step of forming a groove with a cutting saw from the end face of the substrate on which the waveguide and the electrode are formed to below the electrode.
上記の溝は、基板の底面まで達していてもよい。The above-mentioned groove may reach the bottom surface of the substrate.
基板に対し、上記のように溝を形成した場合、電極下の
基板（屈折重大）の厚さが溝の分だけ薄くなり、しかも
その分だけ空気層（屈折率小）が生じることになる。す
ると、マイクロ波の実効屈折率が、溝（空気層）のある
分だけ小さくなり、光波の屈折率に近づく。よって、光
波とマイクロ波の間に生じる速度差は極めて小さくなる
ため、変調速度を上げることができ、すなわち変調帯域
の広帯域化が可能になる。上記の溝を基板の底面まで達
するように形成すれば、この効果は一層大きくなる。When grooves are formed in the substrate as described above, the thickness of the substrate (refractive index critical) under the electrode becomes thinner by the groove, and an air layer (refractive index lower) is created by that amount. Then, the effective refractive index of the microwave becomes smaller by the amount of the groove (air layer) and approaches the refractive index of the light wave. Therefore, the speed difference between the light wave and the microwave becomes extremely small, so the modulation speed can be increased, that is, the modulation band can be widened. If the above-mentioned groove is formed to reach the bottom surface of the substrate, this effect will be even greater.
しかも、上記のような溝は、カッティングソーを用いれ
ば簡単に形成できるので、製造プロセスも非常に単純で
済む。Moreover, since the grooves described above can be easily formed using a cutting saw, the manufacturing process is also very simple.
また、基板は電極下のみが薄くなるので、機械的強度も
十分である。Furthermore, since the substrate is thin only under the electrodes, its mechanical strength is sufficient.
以下、本発明の実施例について、図面を参照しながら説
明する。Embodiments of the present invention will be described below with reference to the drawings.
第１図（ａ）及びｆｂｌは、本発明の導波路型光変調器
の一実施例の斜視図及びそのＢ−Ｂ拡大断面図である。FIGS. 1A and 1F are a perspective view and an enlarged BB--B sectional view of an embodiment of the waveguide type optical modulator of the present invention.
同図には、マツハツエンダ型の光変調器を示した。The figure shows a Matsuhatsu Enda type optical modulator.
同図において、基板１１はＺｖｉＬｉＮｂｏ３からなり
、その所定領域には、第３図に示したのと同様な導波路
２がＴｉ拡散により形成されている。また、基板１１上
には、やはり第３図に示したのと同様な一対の非対称な
電極３ａ、３ｂからなる進行波電極が配設されている。In the figure, a substrate 11 is made of ZviLiNbo3, and a waveguide 2 similar to that shown in FIG. 3 is formed in a predetermined region thereof by Ti diffusion. Further, on the substrate 11, a traveling wave electrode consisting of a pair of asymmetrical electrodes 3a and 3b similar to that shown in FIG. 3 is disposed.
この電極の寸法は、後述するマイクロ波の実効屈折−率
が小さくなるように設定されており、例えば、長さβが
約２ｃＴ１１程度、幅Ｗが数１０μｍ、ギャップ長ｄが
約１５μｍ、高さｈが数μｍから１０μｍ程度である。The dimensions of this electrode are set so that the effective refractive index of microwaves, which will be described later, is small. For example, the length β is about 2 cT11, the width W is several tens of μm, the gap length d is about 15 μm, and the height is h is about several μm to 10 μm.
更に、基板１１は、電極３ａに対し例えば数μｍ程度ま
で近接した位置に端面１１ａを有して″いる。この端面
１１ａは、例えば第３図に示した基板１の端部（端面１
ａ側）を、同図（ｂ）の−点鎖線りに沿ってカッティン
グソーで切り落とすことにより得られる。また、この端
面１１ａから電極３ａ、３ｂ下にかけて、一定幅の溝１
１ｂが形成されている。ここで、溝１１ｂの深さｆは電
極３ａ、３ｂの位置に合わせて例えば数１０μｍ〜１０
０μｍ程度であり、基板１１の表面から溝１１ｂの上面
までの厚さｇは例えば１０μｍ〜数１０ｐｍ程度である
。また、導波路２ａから端面１１ａまでの間隔と導波路
２ａから溝１１ｂの上面までの間隔は、導波路２ａを伝
播する光に影響がない程度に狭く設定されている。この
ような溝１１ｂは、カッティングソーを用いることによ
り簡単に形成できる。Furthermore, the substrate 11 has an end surface 11a located close to the electrode 3a by, for example, several micrometers.
(a side) along the - dotted chain line in Figure (b) with a cutting saw. Further, from this end surface 11a to below the electrodes 3a, 3b, a groove 1 of a constant width is provided.
1b is formed. Here, the depth f of the groove 11b is adjusted to the position of the electrodes 3a and 3b, for example, from several tens of micrometers to ten micrometers.
The thickness g from the surface of the substrate 11 to the upper surface of the groove 11b is, for example, about 10 μm to several tens of pm. Further, the distance from the waveguide 2a to the end surface 11a and the distance from the waveguide 2a to the top surface of the groove 11b are set to be narrow enough to have no effect on the light propagating through the waveguide 2a. Such a groove 11b can be easily formed using a cutting saw.
上記構成からなる本実施例の導波路型光変調器では、電
極３ａを伝播されるマイクロ波が、従来と同様に基板１
１に対して比較的深くまで染み出すことになる。その場
合、上記のように溝１１ｂが形成されていることから、
電極３ａ下の基板の厚さが溝１１ｂの分だけ薄（、しか
もその分だけ空気層が生じている。すると、ＬｉＮｂ０
ｉの基板１１の誘電率が３０程度と大きいのに比べ、溝
１１ｂ（空気層）の誘電率が１と小さいので、この溝１
１ｂのある分だけマイクロ波の実効屈折率が小さくなる
。よって、マイクロ波の速度が光速に近づき、すなわち
マイクロ波と光波の速度差が極めて小さくなる。このこ
とから、変調速度を従来の限界を越えて向上させること
ができ、従って変調帯域の広帯域化が可能になる。In the waveguide type optical modulator of this embodiment having the above configuration, the microwave propagated through the electrode 3a is transmitted to the substrate 1 as in the conventional case.
It will seep out relatively deeply compared to 1. In that case, since the groove 11b is formed as described above,
The thickness of the substrate under the electrode 3a is thinner by the groove 11b (and an air layer is created by that amount. Then, LiNb0
Since the dielectric constant of the groove 11b (air layer) is as small as 1, compared to the large dielectric constant of the substrate 11 of 30, this groove 1
The effective refractive index of the microwave becomes smaller by the amount of 1b. Therefore, the speed of microwaves approaches the speed of light, that is, the difference in speed between microwaves and light waves becomes extremely small. From this, it is possible to improve the modulation speed beyond the conventional limit, and therefore it becomes possible to widen the modulation band.
しかも、溝１１ｂは、上述したようにカッティングソー
を用いることにより簡単に形成できるので、製造プロセ
スが非常に単純なものとなる。Furthermore, the groove 11b can be easily formed by using a cutting saw as described above, so the manufacturing process becomes extremely simple.
また、従来のように基板全体を薄＜シたものと比べ、本
実施例は電極下のみを薄く形成しであるので、機械的強
度が強く、通常の使用に十分に耐えうろことができる。In addition, compared to the conventional structure in which the entire substrate is made thinner, in this embodiment, only the portions below the electrodes are made thinner, so that the mechanical strength is strong and the substrate can withstand normal use.
次に、本発明の導波路型光変調器の他の実施例を第２図
（ａｌ及び（ｂｌに示す。Next, another embodiment of the waveguide type optical modulator of the present invention is shown in FIG. 2 (al and (bl).
ここに示した実施例は、第１図の構成において、溝１１
ｂを基板１１の底面まで達するように幅広く形成したも
のである。このようにすることにより、屈折率の小さな
空気層を一段と厚くすることができるので、マイクロ波
の実効屈折率も一段と小さくなる。よって、マイクロ波
の速度が光速に更に近づくため、変調速度のより一層の
向上を実現できる。In the embodiment shown here, in the configuration shown in FIG.
b is formed to be wide enough to reach the bottom surface of the substrate 11. By doing so, the air layer with a small refractive index can be made even thicker, so that the effective refractive index of microwaves is also further reduced. Therefore, since the speed of microwaves approaches the speed of light, it is possible to further improve the modulation speed.
なお、第１図に示したｌ、ｗ、ｄ、ｈ、ｆ、ｇ等の各寸
法は、前述した数値に限定されるものではなく、光変調
器の各特性等を考慮して適宜設定されるものである。Note that the dimensions l, w, d, h, f, g, etc. shown in FIG. It is something that
また、基板１１と電極３ａ、３ｂの間には、５ｉｎ２等
からなるバッファ層を数１０００人程度形成してもよい
。このようなバッファ層はＬｉＮｂ０．基板と比べ屈折
率が非常に小さいので、上述した溝１１ｂとの相乗作用
により、マイクロ波の実効屈折率を一段と低減させるこ
とができる。なお、実験結果によれば、マイクロ波の実
効屈折率を低減させるだめには、上記のようにバッファ
層を設けると共に、電極を厚くし、かつ電極幅を狭くす
ればよいことが確認された。Further, between the substrate 11 and the electrodes 3a and 3b, a buffer layer of about 1000 pieces of 5 in 2 or the like may be formed. Such a buffer layer is made of LiNb0. Since the refractive index is very small compared to the substrate, the effective refractive index of microwaves can be further reduced due to the synergistic effect with the groove 11b described above. According to experimental results, it was confirmed that in order to reduce the effective refractive index of microwaves, it is sufficient to provide a buffer layer as described above, thicken the electrode, and narrow the electrode width.
更に、上述した各実施例ではマツハツエンダ型を採用し
たが、本発明はこれに限らず各種の導波路型光変調器に
適用でき、特には進行波電極を用いたもので大きな効果
が期待できる。Furthermore, although the Matsuhatsu Enda type optical modulator is used in each of the above-mentioned embodiments, the present invention is not limited to this and can be applied to various waveguide type optical modulators, and in particular, great effects can be expected from those using traveling wave electrodes.
以上説明したように、本発明によれば、屈折率の小さな
空気層を電極下に設けることができるので、その分だけ
マイクロ波の実効屈折率を低減でき、従って変調速度の
向上が可能になり、すなわち変調帯域の広帯域化が実現
される。しかも、基板の一部にのみ溝を形成するだけで
済むことから、製造プロセスは極めて簡単であり、機械
的強度も十分である。As explained above, according to the present invention, since an air layer with a small refractive index can be provided under the electrode, the effective refractive index of microwaves can be reduced by that amount, and therefore the modulation speed can be improved. In other words, the modulation band can be widened. Furthermore, since the grooves only need to be formed in a portion of the substrate, the manufacturing process is extremely simple and the mechanical strength is sufficient.
第１図（ａ）は本発明の導波路型光変調器の一実施例の
斜視図、
第１図（ｂ）は第１図（ａ）におけるＢ−Ｂ拡大断面図
、第２図［ａ）は本発明の導波路型光変調器の他の実施
例の斜視図、
第２図（ｂｌは第２図（ａｌにおけるＣ−Ｃ拡大断面図
、第３図（ａｌは従来の導波路型光変調器の斜視図、第
３図［ｂ）は第３図（ａ）におけるＡ−Ａ拡大断面図で
ある。
２．２ａ、２ｂ・・・導波路、
３ａ、３ｂ・・・電極、
１１・・・基板、
１１ａ・・・端面、
１１ｂ・・・溝。FIG. 1(a) is a perspective view of an embodiment of the waveguide type optical modulator of the present invention, FIG. 1(b) is an enlarged sectional view taken along the line B-B in FIG. 1(a), and FIG. ) is a perspective view of another embodiment of the waveguide type optical modulator of the present invention, FIG. 2 (bl is an enlarged sectional view taken along C-C in FIG. The perspective view of the optical modulator, FIG. 3 [b] is an enlarged sectional view taken along the line A-A in FIG. ... Substrate, 11a... End face, 11b... Groove.
Claims (1)
に、該導波路に対応して電極（３ａ、３ｂ）を設けてな
る導波路型光変調器において、前記基板に対し前記電極
下に溝（１１ｂ）を設けたことを特徴とする導波路型光
変調器。 ２）基板（１１）に導波路（２ａ、２ｂ）を形成し、該
導波路に対応して電極（３ａ、３ｂ）を形成することに
より導波路型変調器を得る、導波路型変調器の製造方法
において、 前記基板に対し、その端面（１１ａ）から前記電極下に
かけてカッティングソーで溝（１１ｂ）を形成する工程
を備えたことを特徴とする導波路型光変調器の製造方法
。 ３）前記基板（１１）の端部を前記電極（３ａ）に近接
した位置から切断し、該切断によって新たに得られた端
面（１１ａ）から前記溝（１１ｂ）を形成することを特
徴とする請求項２記載の導波路型光変調器の製造方法。[Claims] 1) In a waveguide type optical modulator in which electrodes (3a, 3b) are provided on a substrate (11) on which waveguides (2a, 2b) are formed, corresponding to the waveguides. . A waveguide type optical modulator, characterized in that a groove (11b) is provided under the electrode on the substrate. 2) A waveguide modulator is obtained by forming waveguides (2a, 2b) on a substrate (11) and forming electrodes (3a, 3b) corresponding to the waveguides. A method for manufacturing a waveguide type optical modulator, comprising the step of forming a groove (11b) in the substrate from the end surface (11a) of the substrate to below the electrode using a cutting saw. 3) The end portion of the substrate (11) is cut from a position close to the electrode (3a), and the groove (11b) is formed from the end surface (11a) newly obtained by the cutting. A method for manufacturing a waveguide type optical modulator according to claim 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63044511A JP2651183B2 (en) | 1988-02-29 | 1988-02-29 | Manufacturing method of waveguide type optical modulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63044511A JP2651183B2 (en) | 1988-02-29 | 1988-02-29 | Manufacturing method of waveguide type optical modulator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01219819A true JPH01219819A (en) | 1989-09-01 |
| JP2651183B2 JP2651183B2 (en) | 1997-09-10 |
Family
ID=12693575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63044511A Expired - Fee Related JP2651183B2 (en) | 1988-02-29 | 1988-02-29 | Manufacturing method of waveguide type optical modulator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2651183B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6219469B1 (en) * | 1996-09-06 | 2001-04-17 | Ngk Insulators, Ltd. | Optical waveguide devices, traveling-wave light modulators, and process for producing optical waveguide devices |
| US6400494B1 (en) | 1999-08-27 | 2002-06-04 | Ngk Insulators, Ltd. | Traveling wave optical modulator |
| WO2003012533A1 (en) * | 2001-08-01 | 2003-02-13 | Sumitomo Osaka Cement Co., Ltd. | Optical modulator |
| JP2010008686A (en) * | 2008-06-26 | 2010-01-14 | Fujitsu Ltd | Optical modulating element and its method for manufacturing |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3851825B2 (en) | 2002-02-07 | 2006-11-29 | 富士通株式会社 | Optical modulator module and optical modulator |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63234219A (en) * | 1987-03-20 | 1988-09-29 | Nippon Telegr & Teleph Corp <Ntt> | Optical modulator |
-
1988
- 1988-02-29 JP JP63044511A patent/JP2651183B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63234219A (en) * | 1987-03-20 | 1988-09-29 | Nippon Telegr & Teleph Corp <Ntt> | Optical modulator |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6219469B1 (en) * | 1996-09-06 | 2001-04-17 | Ngk Insulators, Ltd. | Optical waveguide devices, traveling-wave light modulators, and process for producing optical waveguide devices |
| US6400494B1 (en) | 1999-08-27 | 2002-06-04 | Ngk Insulators, Ltd. | Traveling wave optical modulator |
| WO2003012533A1 (en) * | 2001-08-01 | 2003-02-13 | Sumitomo Osaka Cement Co., Ltd. | Optical modulator |
| CN1295545C (en) * | 2001-08-01 | 2007-01-17 | 住友大阪水泥股份有限公司 | Optical modulator |
| JP2010008686A (en) * | 2008-06-26 | 2010-01-14 | Fujitsu Ltd | Optical modulating element and its method for manufacturing |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2651183B2 (en) | 1997-09-10 |
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