JPS63141021A - Mach-zehnder type optical waveguide modulator - Google Patents
Mach-zehnder type optical waveguide modulatorInfo
- Publication number
- JPS63141021A JPS63141021A JP28684086A JP28684086A JPS63141021A JP S63141021 A JPS63141021 A JP S63141021A JP 28684086 A JP28684086 A JP 28684086A JP 28684086 A JP28684086 A JP 28684086A JP S63141021 A JPS63141021 A JP S63141021A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- optical waveguide
- electric field
- electrodes
- branched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 14
- 230000005684 electric field Effects 0.000 abstract description 13
- 229910003327 LiNbO3 Inorganic materials 0.000 abstract 1
- 230000008033 biological extinction Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
マツハツエンダ型光導波路変調器において、2本の光導
波路の間に溝を設け、その溝の底部に電極を配置して、
変調に要する印加電圧の低減と変調器の性能を維持する
ものである。[Detailed Description of the Invention] [Summary] In a Matsuhatsu Enda type optical waveguide modulator, a groove is provided between two optical waveguides, an electrode is placed at the bottom of the groove,
This reduces the applied voltage required for modulation and maintains the performance of the modulator.
本発明は光導波路を用いた光変調器に関し、特にマツハ
ツエンダ型光導波路変調器に関する。The present invention relates to an optical modulator using an optical waveguide, and particularly to a Matsuhatsu Enda type optical waveguide modulator.
マツハツエンダ型の光導波路変調器は例えば、LiNb
O3の基板にTiを蒸着して分岐した2本の導波路を設
け、その上にバッファ層を作成し、さらにその上の分岐
された導波路部分に対応する位置に、電極を配置してい
る。この2つの電極間に電圧を印加すると、従来型のマ
ツハツエンダ型の光導波路変調器の断面図を示す第3図
における矢印のような電気力線を与える電界が生ずる。The Matsuhatsu Enda type optical waveguide modulator is, for example, LiNb
Ti is deposited on an O3 substrate to form two branched waveguides, a buffer layer is created on top of that, and electrodes are placed above it at positions corresponding to the branched waveguides. . When a voltage is applied between these two electrodes, an electric field is generated that provides lines of electric force as shown by the arrows in FIG. 3, which is a cross-sectional view of a conventional Matsuhatsu Enda type optical waveguide modulator.
この電界により光導波路2における光の屈折率が電気光
学効果によって変化し、導波路2を伝送する光の位相を
変化させる。この変化が正電極側(右側)と負電極側(
左側)で逆に作用するので2倍の効果となり、分岐され
た2本の導波路が再び合体すると2つの光は互いに干渉
し、その結果光が変調される。This electric field causes the refractive index of light in the optical waveguide 2 to change due to the electro-optic effect, thereby changing the phase of the light transmitted through the waveguide 2. This change occurs on the positive electrode side (right side) and on the negative electrode side (
On the left side), the effect is doubled, and when the two branched waveguides are combined again, the two lights interfere with each other, resulting in modulation of the light.
この変調のため電極に印加する電圧は高電圧を必要とす
るので、これの低減が非常に求められており、実現する
ための試みがなされている。すなわち、光導波路2の間
隔を小さくし同時に電極5の間隔を小さくして、同じ印
加電圧に対してより強力な電界を得るようにしているが
、分岐した2つの光導波路2をあまり近づけると、分岐
した2つの光が結合し、消光比の劣化を招くという問題
が発生する。Since a high voltage is required to be applied to the electrodes for this modulation, there is a strong need to reduce this voltage, and attempts are being made to achieve this. That is, by reducing the distance between the optical waveguides 2 and at the same time reducing the distance between the electrodes 5, a stronger electric field is obtained for the same applied voltage, but if the two branched optical waveguides 2 are brought too close together, A problem arises in that the two branched lights combine, resulting in a deterioration of the extinction ratio.
前述の従来技術における問題点にかんがみ、本発明の目
的は、変調器の性能、すなわち消光比は劣化させずに、
変調のため電極に印加する駆動電圧を低減することにあ
る。In view of the problems in the prior art described above, an object of the present invention is to improve the performance of the modulator, that is, the extinction ratio, without deteriorating the extinction ratio.
The aim is to reduce the driving voltage applied to the electrodes for modulation.
第1図のように、光導波路基板1に設けられた2本に分
岐された光導波路2の間に溝3を設け、その溝3の底部
に金属膜から成る中間電極4を配置する。As shown in FIG. 1, a groove 3 is provided between two branched optical waveguides 2 provided on an optical waveguide substrate 1, and an intermediate electrode 4 made of a metal film is placed at the bottom of the groove 3.
前述の手段を用いれば、電極50間の静電容量は中間電
極4が中間に存在するから2つの静電容量の直列回路と
等価となって電極間における金属以外の部分の距離が非
常に小さくなり、それにより光導波路における電界は強
くなる。また2つの分岐された光導波路2の間に溝3が
設けられ分岐した2つの光の結合が妨げられる。また溝
3および中間電極4により電界の向きが基板表面に対し
垂直な方向に近づき(第2図参照)、例えばZカフ ト
LiNb0z基板を用いTM光を適用した場合、電界が
より有効に利用される。If the above-mentioned method is used, the capacitance between the electrodes 50 is equivalent to a series circuit of two capacitances because the intermediate electrode 4 is present in the middle, and the distance between the electrodes and the non-metal part is very small. Therefore, the electric field in the optical waveguide becomes stronger. Further, a groove 3 is provided between the two branched optical waveguides 2 to prevent coupling of the two branched lights. In addition, the direction of the electric field approaches the direction perpendicular to the substrate surface due to the groove 3 and the intermediate electrode 4 (see Figure 2). For example, when using a Z-caft LiNb0z substrate and applying TM light, the electric field can be used more effectively. Ru.
本発明の一実施例としてのマンハツェンダ型光導波路変
調器の斜視図が第1図に、第1図の変調器の線III−
IIについての断面図が第2図に示される。A perspective view of a Mannha-Zehnder optical waveguide modulator as an embodiment of the present invention is shown in FIG.
A cross-sectional view of II is shown in FIG.
光導波路基板lはZカットLiNb0z基板にTiを熱
拡散して光導波路2を作製する。光導波路2は中央付近
で2本に分岐される。2本の光導波路2の間の基板1に
溝3をエツチング等の方法を用いて作製する。金属電極
(AuまたはA1等を用いる)による光の吸収を防ぐた
めに、前述のように加工された基板1にバッフア層6を
設ける。For the optical waveguide substrate 1, an optical waveguide 2 is fabricated by thermally diffusing Ti onto a Z-cut LiNb0z substrate. The optical waveguide 2 is branched into two near the center. A groove 3 is formed in the substrate 1 between the two optical waveguides 2 using a method such as etching. In order to prevent absorption of light by the metal electrode (using Au or A1, etc.), a buffer layer 6 is provided on the substrate 1 processed as described above.
次いで、電極を光導波路上と溝3の底部に蒸着等によっ
て作製する。/I!13の底部に設けられた電極は中間
電極4となり、光導波路2の上に設けられた電極5は駆
動電圧を印加するためのものとなる。電極5の一方は接
地され、他方は電圧Vが印加される。中間電極4には電
圧は印加されない。Next, electrodes are formed on the optical waveguide and at the bottom of the groove 3 by vapor deposition or the like. /I! The electrode provided at the bottom of the optical waveguide 2 serves as an intermediate electrode 4, and the electrode 5 provided on the optical waveguide 2 serves to apply a driving voltage. One of the electrodes 5 is grounded, and the voltage V is applied to the other. No voltage is applied to the intermediate electrode 4.
光は太い矢印の方向に伝送される。Zカット基板はC軸
が第1図に矢印で示した方向(厚さ方向)となるよう加
工されている。Light is transmitted in the direction of the thick arrow. The Z-cut substrate is processed so that the C-axis is in the direction shown by the arrow in FIG. 1 (thickness direction).
第2図を参照すると、中間電極4を設けたことにより、
正側電極5と中間電極4で1つの静電容量を構成し、負
側電極5と中間電極4で他の1つの静電容量を構成し、
電極5の間における金属以外の部分の距離が小さくなる
。このことは光導波路2の2本に分岐された部分におい
て電界強度が増加することになる。従って低い駆動電圧
を電極5に印加しても従来型と同等な光変調を得ること
が可能となる。Referring to FIG. 2, by providing the intermediate electrode 4,
The positive electrode 5 and the intermediate electrode 4 constitute one capacitance, and the negative electrode 5 and the intermediate electrode 4 constitute another capacitance,
The distance between the electrodes 5 and the non-metal parts becomes smaller. This means that the electric field strength increases at the two-branched portion of the optical waveguide 2. Therefore, even if a low driving voltage is applied to the electrode 5, it is possible to obtain optical modulation equivalent to that of the conventional type.
第3図の従来型の光変調器では矢印を付した電気力線の
基板lの中を通過する距離が大きいから、同じ印加電圧
で得られる電界が弱い。In the conventional optical modulator shown in FIG. 3, the electric field lines indicated by arrows have a long distance to pass through the substrate l, so the electric field obtained with the same applied voltage is weak.
第2図と第3図の矢印で示される電気力線の方向を比較
すると、中間電極4のため第2図の電気力線が基板面に
対し垂直方向、すなわちC軸方向成分が増加する傾向に
あり、電気光学効果の大きくなるTM光を用いた場合、
電界が光導波路に対して一層有効に作用するようになる
。また分岐された2つの光4波路間には溝3が設けられ
たので、分岐した2つの光の結合のおそれも少ない。Comparing the directions of the electric lines of force indicated by the arrows in FIGS. 2 and 3, the lines of electric force in FIG. 2 tend to increase in the direction perpendicular to the substrate surface, that is, the C-axis direction component, due to the intermediate electrode 4. When using TM light, which has a large electro-optic effect,
The electric field acts more effectively on the optical waveguide. Furthermore, since the groove 3 is provided between the two branched four-wave paths, there is less possibility of coupling of the two branched lights.
本発明によれば、変調器の性能、すなわち消光比は劣化
させずに、変調のため電極に印加する駆動電圧を低減す
ることができる。According to the present invention, the driving voltage applied to the electrodes for modulation can be reduced without deteriorating the performance of the modulator, that is, the extinction ratio.
第1図は本発明の一実施例としてのマツハ・ツエンダ型
光導波路変調器の斜視図、
第2図は第1図の変調器の線■−■についての断面図、
および
第3図は従来例のマツハツエンダ型光導波路変調器の第
2図と同様な断面図である。
図において、
1・・・光導波路基板、 2・・・光導波路、3・・・
溝、 4・・・中間電極、5・・・電極、
6・・・バッファ層。FIG. 1 is a perspective view of a Matsuha-Zehnder type optical waveguide modulator as an embodiment of the present invention, FIG. 2 is a cross-sectional view of the modulator along line ■-■ in FIG. 1,
3 is a sectional view similar to FIG. 2 of a conventional Matsuhatsu Enda type optical waveguide modulator. In the figure, 1... optical waveguide substrate, 2... optical waveguide, 3...
groove, 4... intermediate electrode, 5... electrode,
6...Buffer layer.
Claims (1)
該溝(3)の底部に金属膜から成る中間電極(4)を配
置したマッハツェンダ型光導波路変調器。A groove (3) is provided between the two branched optical waveguides (2),
A Mach-Zehnder optical waveguide modulator in which an intermediate electrode (4) made of a metal film is arranged at the bottom of the groove (3).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61286840A JPH0827447B2 (en) | 1986-12-03 | 1986-12-03 | Optical waveguide device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61286840A JPH0827447B2 (en) | 1986-12-03 | 1986-12-03 | Optical waveguide device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63141021A true JPS63141021A (en) | 1988-06-13 |
JPH0827447B2 JPH0827447B2 (en) | 1996-03-21 |
Family
ID=17709713
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61286840A Expired - Lifetime JPH0827447B2 (en) | 1986-12-03 | 1986-12-03 | Optical waveguide device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0827447B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6448021A (en) * | 1987-08-19 | 1989-02-22 | Nippon Telegraph & Telephone | Optical device |
EP0828175A2 (en) * | 1996-09-06 | 1998-03-11 | Ngk Insulators, Ltd. | Optical waveguide devices, travelling-wave light modulators, and process for producing optical waveguide device |
US5886807A (en) * | 1997-01-24 | 1999-03-23 | California Institute Of Technology | Traveling-wave reflective electro-optic modulator |
WO2005045512A1 (en) * | 2003-11-10 | 2005-05-19 | Matsushita Electric Industrial Co., Ltd. | Optical modulator and communication system |
JP2008052103A (en) * | 2006-08-25 | 2008-03-06 | Anritsu Corp | Optical modulator |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5227649A (en) * | 1975-08-27 | 1977-03-02 | Nippon Telegr & Teleph Corp <Ntt> | Waveguide type optical modulator |
JPS5434851A (en) * | 1977-08-05 | 1979-03-14 | Thomson Csf | Method of manufacturing integrated optical structure |
-
1986
- 1986-12-03 JP JP61286840A patent/JPH0827447B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5227649A (en) * | 1975-08-27 | 1977-03-02 | Nippon Telegr & Teleph Corp <Ntt> | Waveguide type optical modulator |
JPS5434851A (en) * | 1977-08-05 | 1979-03-14 | Thomson Csf | Method of manufacturing integrated optical structure |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6448021A (en) * | 1987-08-19 | 1989-02-22 | Nippon Telegraph & Telephone | Optical device |
EP0828175A2 (en) * | 1996-09-06 | 1998-03-11 | Ngk Insulators, Ltd. | Optical waveguide devices, travelling-wave light modulators, and process for producing optical waveguide device |
EP0828175A3 (en) * | 1996-09-06 | 1999-10-13 | Ngk Insulators, Ltd. | Optical waveguide devices, travelling-wave light modulators, and process for producing optical waveguide device |
US6219469B1 (en) * | 1996-09-06 | 2001-04-17 | Ngk Insulators, Ltd. | Optical waveguide devices, traveling-wave light modulators, and process for producing optical waveguide devices |
US5886807A (en) * | 1997-01-24 | 1999-03-23 | California Institute Of Technology | Traveling-wave reflective electro-optic modulator |
WO2005045512A1 (en) * | 2003-11-10 | 2005-05-19 | Matsushita Electric Industrial Co., Ltd. | Optical modulator and communication system |
JP2008052103A (en) * | 2006-08-25 | 2008-03-06 | Anritsu Corp | Optical modulator |
Also Published As
Publication number | Publication date |
---|---|
JPH0827447B2 (en) | 1996-03-21 |
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Legal Events
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