JPH01215976A - Sputtering device provided with self-diagnostic function - Google Patents
Sputtering device provided with self-diagnostic functionInfo
- Publication number
- JPH01215976A JPH01215976A JP3957588A JP3957588A JPH01215976A JP H01215976 A JPH01215976 A JP H01215976A JP 3957588 A JP3957588 A JP 3957588A JP 3957588 A JP3957588 A JP 3957588A JP H01215976 A JPH01215976 A JP H01215976A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum
- chamber
- sputtering
- self
- computer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 18
- 238000004092 self-diagnosis Methods 0.000 claims abstract description 7
- 230000002950 deficient Effects 0.000 claims description 3
- 230000000052 comparative effect Effects 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 7
- 239000013077 target material Substances 0.000 abstract description 2
- 239000006185 dispersion Substances 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 238000007872 degassing Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000013024 troubleshooting Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概 要〕
コンピュータにより自己診断を行なうスパッタリング装
置に関し、
形成される膜の膜質のバラツキを防止することを目的と
し、
スパッターチャンバーの真空度の経時変化を連続的に追
跡する圧力測定装置と、該圧力測定装置からのデータを
収集し、解析を行ない、設定基準値と比較判定を行なう
コンピュータと、該コンピュータの判定が不良の場合に
警告又は表示を行なうアラーム又は表示装置とを具備し
て構成する。[Detailed Description of the Invention] [Summary] Regarding a sputtering device that performs self-diagnosis using a computer, the purpose of this invention is to continuously track changes in the degree of vacuum in a sputtering chamber over time in order to prevent variations in the quality of the formed film. a computer that collects data from the pressure measuring device, analyzes it, and compares it with a set reference value; and an alarm or display device that issues a warning or display if the computer's judgment is incorrect. It is composed of:
本発明はコンピュータにより自己診断を行なうスパッタ
リング装置に関する。The present invention relates to a sputtering apparatus that performs self-diagnosis using a computer.
従来のスパッタリング技術は、特に半導体素子製造ライ
ンの金属薄膜形成プロセスにおいて所望の仕様を実現す
るのに多用されている。半導体素子製造ラインでスパッ
タ装置を用いる場合には２４時間稼動で無人運転できる
事が望ましく、装置状態の安定性が必要とされる。Conventional sputtering techniques are often used to achieve desired specifications, particularly in metal thin film forming processes in semiconductor device manufacturing lines. When a sputtering device is used in a semiconductor device manufacturing line, it is desirable to be able to operate it 24 hours a day and unattended, and stability of the device condition is required.
第５図は従来のスパンクリング装置を示す図である。こ
れは真空容器１の中に対向電極２及び３が設けられたも
ので、一方の電極２に薄膜が形成される基板４を載置し
、他方の電極３に薄膜となる材料のターゲット５を取り
付け、真空容器１の中に１０−３〜１０−’ｔｏｒｒの
Ａｒガス等を導入し、対向電極２，３間に高周波電力（
又は直流）を印加することにより基板４の表面にターゲ
ット材料の薄膜を形成することができるようになってい
る。FIG. 5 is a diagram showing a conventional spankling device. This has opposing electrodes 2 and 3 provided in a vacuum container 1. A substrate 4 on which a thin film is to be formed is placed on one electrode 2, and a target 5 of a material to be formed into a thin film is placed on the other electrode 3. Attachment, Ar gas or the like at 10-3 to 10-'torr is introduced into the vacuum chamber 1, and high-frequency power (
By applying current (or direct current), a thin film of the target material can be formed on the surface of the substrate 4.
上記従来のスパッタリング装置では、外部リーク或いは
内部からの脱ガスをできるだけ抑え、高真空を維持しな
いと形成される薄膜の薄質が劣化することが知られてい
る。ところが上記従来の装置では装置状況の診断は装置
の自動機能としては準備されていないため、作業者が適
宜行ない判断していることが多く、作業者の熟練度ある
いは勘に頼っている。このため膜質のバラツキが大きく
なるという問題があった。It is known that in the conventional sputtering apparatus described above, the thin quality of the formed thin film deteriorates unless external leakage or internal degassing is suppressed as much as possible and a high vacuum is maintained. However, in the above-mentioned conventional apparatus, diagnosis of the apparatus status is not provided as an automatic function of the apparatus, and therefore the operator often makes a judgment as appropriate, relying on the operator's skill level or intuition. Therefore, there was a problem in that the film quality varied widely.
本発明は上記問題点に鑑み、形成される膜質のバラツキ
を防止できる自己診断機能を具備したスパッタリング装
置を提供することを目的とするものである。SUMMARY OF THE INVENTION In view of the above problems, it is an object of the present invention to provide a sputtering apparatus equipped with a self-diagnosis function that can prevent variations in the quality of the formed film.
上記目的は、スパッターチャンバー１０の真空度の経時
変化を連続的に追跡する圧力測定装置２８と、該圧力測
定装置２８からのデータを収集し、解析を行ない、設定
基準と比較判定を行なうコンピュータ２９と、該コンピ
ュータ２９の判定が不良の場合に警告又は表示を行なう
アラーム又は表示装置３０とを具備して構成されたこと
を特徴とする自己診断機能を具備したスパッタリング装
置によって達成される。The above purpose is to provide a pressure measuring device 28 that continuously tracks changes in the degree of vacuum in the sputter chamber 10 over time, and a computer 29 that collects data from the pressure measuring device 28, analyzes it, and compares it with setting standards. This is achieved by a sputtering apparatus equipped with a self-diagnosis function characterized in that it is configured to include: and an alarm or display device 30 that issues a warning or display if the judgment by the computer 29 is defective.
スパッターチャンバー内の真空度を連続的に追跡し、そ
のデータをコンピュータで収集解析し設定基準値と比較
判定することにより装置の状況の診断を自動的に行なう
ことができる。By continuously tracking the degree of vacuum in the sputter chamber, collecting and analyzing the data using a computer, and comparing and determining the data with set reference values, it is possible to automatically diagnose the status of the apparatus.
第１図は本発明の実施例を示す図である。 FIG. 1 is a diagram showing an embodiment of the present invention.
本実施例は同図に示すように、スパッターチャンバー１
０は、その前後を仕切弁１１．１２を介して準備室１３
．１４に接続されており、各準備室１３．１４及びスパ
ッターチャンバー１０内にはウェハー１５を搬送するた
めのベルト搬送装置１６・１７．１８が設けられ、また
各室はそれぞれバルブ１９ 、２０ 。In this embodiment, as shown in the figure, a sputter chamber 1
0 is connected to the preparation room 13 through gate valves 11 and 12 before and after.
．． Each preparation chamber 13.14 and the sputter chamber 10 are provided with belt conveying devices 16 and 17.18 for conveying the wafer 15, and each chamber is provided with valves 19 and 20, respectively.
２１を有する排気管２２，２３．２４により真空ポンプ
に接続され真空状態にすることができるようになってい
る。またスパッターチャンバー１０内にはシャッター駆
動軸２５により駆動されるシャッター２６と、該シャッ
ター２６を挟んで対向電極が設けられ、一方の電極にタ
ーゲット２７が、他方の電極にウェハー１５′が取付け
られるようになっている。またこのスパッターチャンバ
ー１０には該チャンバー内の真空度を測定する圧力測定
装置２８が取付けられ、さらに該圧力測定装置２８に接
続して、そのデータを収集・解析し、設定基準値と比較
判定を行なうコンピュータ２９と、該コンピュータの判
定が不良の場合に警告又は表示を行なうアラーム又は表
示装置３０が接続されている。Exhaust pipes 22, 23, and 24 having 21 are connected to a vacuum pump so that a vacuum can be created. Further, in the sputter chamber 10, a shutter 26 driven by a shutter drive shaft 25 and opposing electrodes are provided with the shutter 26 in between.A target 27 is attached to one electrode, and a wafer 15' is attached to the other electrode. It has become. Further, a pressure measuring device 28 is attached to this sputter chamber 10 to measure the degree of vacuum inside the chamber, and is further connected to the pressure measuring device 28 to collect and analyze the data and compare it with a set standard value. A computer 29 that performs the test is connected to an alarm or display device 30 that provides a warning or display if the computer's judgment is defective.
このように構成された本実施例は次のような到達真空度
測定モード、クランプモード、駆動部からのリークチエ
ツクモードの３つの自己診断機能を有する。The present embodiment thus configured has three self-diagnosis functions: an ultimate vacuum measurement mode, a clamp mode, and a leak check mode from the driving section.
到達真空度測定モードはターゲット交換或いは故障修理
等でシール部品（０’Ｊング）を交換したりした時に用
いるもので、第２図に示すようにチャンバー大気開放後
排気を始めてからのチャンバー真空度の時間経過を追跡
し、例えば曲線Ａ、Ｂの如くデータを収集する。そして
到達真空度が設定時間（例えば１時間）に予め設定した
基準値（例えば３． ＯＸ Ｉ Ｑ−７ｔｏｒｒ）に達
しない曲線Ｂの如き場合にはアラームを出す。この到達
真空度が悪いのは真空ポンプの排気能力に対して無視で
きない程大きな外部リークがあるためである。The ultimate vacuum measurement mode is used when replacing seal parts (0'J) for target replacement or troubleshooting.As shown in Figure 2, it measures the chamber vacuum level after the chamber is opened to the atmosphere and evacuation begins. , and collect data such as curves A and B, for example. Then, if the ultimate vacuum level does not reach a preset reference value (for example, 3.OXIQ-7torr) within a set time (for example, 1 hour), an alarm is issued. The reason why this ultimate vacuum level is poor is that there is a large external leak that cannot be ignored with respect to the evacuation capacity of the vacuum pump.
次のクランプモードは、チャンバー内部からの脱ガス或
いは微小リークがあっても到達真空度の良し悪しで判断
できないために用いるもので、このためにはチャンバー
１０のバルブ２０を閉じてクランプ状態とし、第３図に
示すようにチャンバー内真空度の時間変化を追跡し曲線
Ｃ２Ｄの如くデータを収集する。そして真空度が設定時
間（例えば３分）内に基準値（例えば３ Ｘ １０−５
ｔｏｒｒ）を越えた曲線りの如き場合はアラームを出す
。なおこのクランプモードは、「チャンバー内部の焼出
し」或いは［ダミーウェハーへの膜付は作業」の何れか
によりチャンバー内部の脱ガスを促進させた後行なって
も良い。The next clamp mode is used because even if there is degassing or a small leak from inside the chamber, it cannot be determined based on the level of vacuum achieved.For this purpose, the valve 20 of the chamber 10 is closed and the clamp state is set. As shown in FIG. 3, the time change in the degree of vacuum inside the chamber is tracked and data is collected as shown by the curve C2D. Then, the degree of vacuum reaches the reference value (e.g. 3 x 10-5) within the set time (e.g. 3 minutes).
If the curve exceeds (torr), an alarm will be issued. Note that this clamp mode may be performed after promoting degassing inside the chamber by either "baking out the inside of the chamber" or "attaching a film to a dummy wafer as a work".
次に駆動部からのリークチエツクモードは、仕切弁１１
・１２、ウェハー搬送ベルト駆動部、シャッタ駆動部等
の真空シールされた駆動部が１０００〜１０００（１回
の繰返し動作で劣化を生じリークの恐れがある場合に用
いるもので、上記のリークを発見するために前述のクラ
ンプテストと同じくチャンバー排気用のバルブ２０を閉
じた状態で上記の駆動ンール部の動作を数度行ないチャ
ンバー内真空度の時間的変化を測定して第４図の如き曲
線Ｅ。Next, in the leak check mode from the drive section, the gate valve 11
・12. Vacuum-sealed drive parts such as wafer conveyance belt drive part and shutter drive part are 1000 to 1000 (used when there is a risk of leakage due to deterioration due to one repeated operation, and the above leak is detected) In order to do this, we operated the drive unit several times with the chamber exhaust valve 20 closed, as in the clamp test described above, and measured the temporal change in the degree of vacuum in the chamber, resulting in a curve E as shown in Fig. 4. .
Ｆを得る。リークがない場合は曲線Ｅの如く曲線はなめ
らかであるが、リークがあれば曲線Ｆの如く瞬間的な変
化があり、これによりリークの有無を判断するのである
。Get an F. If there is no leak, the curve is smooth as shown by curve E, but if there is a leak, there is an instantaneous change as shown by curve F, and this is used to judge whether or not there is a leak.
以上の如く本実施例によれば３つのチエツクモードによ
りスパック−装置の自己チエツクを行なうことができ形
成される膜の膜質のバラツキを防止することができる。As described above, according to this embodiment, the spacing apparatus can self-check using the three check modes, and variations in the quality of the formed film can be prevented.
以上説明したように本発明によれば、スパック−装置の
真空管理が作業者の熟練度、勘等に依らずに行なえるた
め、管理が標準化され、成膜される膜の膜質のバラツキ
を小さくすることができる。As explained above, according to the present invention, the vacuum control of the spacing apparatus can be performed without depending on the skill level or intuition of the operator, so that the control is standardized and the variation in film quality of the film formed is reduced. can do.
又作業者が従来管理に要した時間で別の仕事を行なえる
ため時間の有効利用が図れる。In addition, since workers can do other tasks in the time previously required for management, time can be used more effectively.
第１図は本発明の実施例を示す図、
第２図は到達真空度の具体例を示す図、第３図はクラン
プテストの具体例を示す図、く８）
第４図は駆動部動作時のリークの具体例を示す図、
第５図は従来のスパッター装置を示す図である。
図において、
１０はスパッターチャンバー、
１１．１２は仕切弁、
１３．１４は準備室、
１５．１５’はウェハー、
１６．１７．１８はベルト搬送装置、
１９．２０．２１はバルブ、
２２．２３．２４は排気管、
２５はシャッター駆動軸、
２６はシャッター、
２７はターゲット、
２８は圧力測定装置、
２９はコンピュータ、
３０はアラーム又は表示装置
を示す。
排気時間（分）
到達真空度の具体例を示す図
第２図
クランプ時間（分）
クランノテストの具体例を示す図
第３図Fig. 1 is a diagram showing an embodiment of the present invention, Fig. 2 is a diagram showing a specific example of the ultimate degree of vacuum, Fig. 3 is a diagram showing a specific example of a clamp test, and Fig. 4 is a diagram showing the operation of the drive unit. FIG. 5 is a diagram showing a conventional sputtering apparatus. In the figure, 10 is a sputter chamber, 11.12 is a gate valve, 13.14 is a preparation chamber, 15.15' is a wafer, 16.17.18 is a belt conveyor, 19.20.21 is a valve, 22.23 .24 is an exhaust pipe, 25 is a shutter drive shaft, 26 is a shutter, 27 is a target, 28 is a pressure measuring device, 29 is a computer, and 30 is an alarm or display device. Evacuation time (minutes) Figure 2 shows a specific example of the ultimate vacuum Clamp time (minutes) Figure 3 shows a specific example of the cranno test
Claims (1)
を連続的に追跡する圧力測定装置（２８）と、該圧力測
定装置（２８）からのデータを収集し、解析を行ない、
設定基準値と比較判定を行なうコンピュータ（２９）と
、 該コンピュータ（２９）の判定が不良の場合に警告又は
表示を行なうアラーム又は表示装置（３０）とを具備し
て構成されたことを 特徴とする自己診断機能を具備したスパッタリング装置
。[Claims] 1. A pressure measuring device (28) that continuously tracks changes over time in the degree of vacuum in the sputtering chamber (10), and data from the pressure measuring device (28) is collected and analyzed. ,
It is characterized in that it is equipped with a computer (29) that performs a comparative judgment with a set standard value, and an alarm or display device (30) that issues a warning or display if the judgment of the computer (29) is defective. Sputtering equipment equipped with a self-diagnosis function.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3957588A JPH01215976A (en) | 1988-02-24 | 1988-02-24 | Sputtering device provided with self-diagnostic function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3957588A JPH01215976A (en) | 1988-02-24 | 1988-02-24 | Sputtering device provided with self-diagnostic function |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01215976A true JPH01215976A (en) | 1989-08-29 |
Family
ID=12556877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3957588A Pending JPH01215976A (en) | 1988-02-24 | 1988-02-24 | Sputtering device provided with self-diagnostic function |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01215976A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04137523A (en) * | 1990-09-27 | 1992-05-12 | Shimadzu Corp | Function diagnosing device for thin film forming device |
| JPH06346234A (en) * | 1993-06-08 | 1994-12-20 | Anelva Corp | Sputtering device |
| CN116200707A (en) * | 2023-05-04 | 2023-06-02 | 粤芯半导体技术股份有限公司 | Preparation method of semiconductor cobalt silicide film layer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62238361A (en) * | 1986-04-08 | 1987-10-19 | ジヨン・エ−・リレ− | Method and apparatus for automatic polymer film coating |
-
1988
- 1988-02-24 JP JP3957588A patent/JPH01215976A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62238361A (en) * | 1986-04-08 | 1987-10-19 | ジヨン・エ−・リレ− | Method and apparatus for automatic polymer film coating |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04137523A (en) * | 1990-09-27 | 1992-05-12 | Shimadzu Corp | Function diagnosing device for thin film forming device |
| JPH06346234A (en) * | 1993-06-08 | 1994-12-20 | Anelva Corp | Sputtering device |
| CN116200707A (en) * | 2023-05-04 | 2023-06-02 | 粤芯半导体技术股份有限公司 | Preparation method of semiconductor cobalt silicide film layer |
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