CN116200707A - Preparation method of semiconductor cobalt silicide film layer - Google Patents
Preparation method of semiconductor cobalt silicide film layer Download PDFInfo
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- CN116200707A CN116200707A CN202310488816.2A CN202310488816A CN116200707A CN 116200707 A CN116200707 A CN 116200707A CN 202310488816 A CN202310488816 A CN 202310488816A CN 116200707 A CN116200707 A CN 116200707A
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- 229910017052 cobalt Inorganic materials 0.000 title claims abstract description 90
- 239000010941 cobalt Substances 0.000 title claims abstract description 90
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 title claims abstract description 90
- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 229910021332 silicide Inorganic materials 0.000 title claims abstract description 44
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 238000004544 sputter deposition Methods 0.000 claims abstract description 59
- 239000007789 gas Substances 0.000 claims abstract description 57
- 239000011261 inert gas Substances 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 230000009471 action Effects 0.000 claims abstract description 25
- 230000002159 abnormal effect Effects 0.000 claims abstract description 12
- 239000013077 target material Substances 0.000 claims abstract description 10
- 230000001052 transient effect Effects 0.000 claims abstract description 10
- 238000000137 annealing Methods 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 30
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- 229910052786 argon Inorganic materials 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 17
- -1 argon ions Chemical class 0.000 claims description 8
- 230000000087 stabilizing effect Effects 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
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- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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Abstract
The application relates to the technical field of semiconductors, and discloses a preparation method of a semiconductor cobalt silicide film layer, which comprises the following steps: introducing inert gas with first gas flow into the reaction chamber, and enabling the sputtering pressure in the reaction chamber to reach first target pressure; a transient ignition event in which the reaction chamber pre-ignites against the inert gas based on the first gas flow rate; the inert gas with the second gas flow is introduced into the reaction chamber, and after the sputtering pressure in the reaction chamber is detected to be stabilized at the second target pressure, the reaction chamber executes the conventional ignition action to trigger the abnormal glow discharge of the inert gas; the inert gas bombards the cobalt target material through abnormal glow discharge, and a cobalt film is deposited on the target semiconductor substrate; after forming the cobalt film with the target thickness, obtaining the target cobalt silicide film layer on the target semiconductor substrate, wherein the ignition failure frequency of the cobalt silicide film layer in the vacuum sputtering deposition process is reduced.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a preparation method of a semiconductor cobalt silicide film layer.
Background
Cobalt silicide (Co silicide) has advantages of low resistivity and good thermal stability, so that a cobalt silicide film layer is mostly adopted in the preparation process of semiconductor devices to reduce contact resistance when a transistor is connected with a metal through hole.
At present, a vacuum sputtering method in a typical physical deposition process is used in a machine chamber for growing cobalt (Co), positive charge gas ions are enabled to impact a target material by applying high voltage to the target material in the chamber, a metal cobalt film is formed on the surface of a wafer after a target material atomic bomb, when the conventional vacuum sputtering machine is used for igniting and starting to apply high voltage, frequent bad phenomena of ignition failure exist on the basis of parameter changes such as pressure, gas concentration and the like in the chamber, so that the machine chamber is subjected to ignition failure alarm, further, the wafer stops growing films in the chamber, normal production flow sheets of subsequent products are affected, the subsequent ignition failure frequency is continuously increased after primary ignition failure, and the machine cannot normally perform production operation, and needs to be changed.
Disclosure of Invention
In view of this, the present application provides a method for preparing a semiconductor cobalt silicide film layer to optimize the firing failure frequency of the cobalt silicide film layer during the vacuum sputtering deposition process.
In order to achieve the above purpose, the technical scheme adopted is as follows:
a preparation method of a semiconductor cobalt silicide film layer comprises the following steps:
forming a target semiconductor substrate in a reaction chamber with a cobalt target;
maintaining the flow of inert gas into the reaction chamber and enabling the sputtering pressure in the reaction chamber to reach a first target pressure;
based on the first gas flow, the reaction chamber performs a pre-ignition transient action for the inert gas, and stops the transient ignition action after the inert gas is instantaneously ignited;
maintaining the inert gas with the second gas flow rate to the reaction chamber, detecting that the sputtering pressure in the reaction chamber is stabilized at a second target pressure, and then executing a conventional ignition action by the reaction chamber to trigger abnormal glow discharge of the inert gas;
based on the second gas flow, the inert gas bombards the cobalt target material through abnormal glow discharge, and a cobalt film is deposited on the target semiconductor substrate;
after forming the cobalt film with the target thickness, the reaction chamber discharges the inert gas and recovers the initial pressure in the reaction chamber;
and obtaining a target cobalt silicide film layer on the target semiconductor substrate.
The application is further configured to: the method for forming the target semiconductor substrate in the reaction chamber with the cobalt target material further comprises the following steps:
placing a semiconductor substrate with oxide layer impurities in a reaction chamber;
argon is introduced into the reaction chamber, and the argon is plasmized into argon ions;
the reaction chamber bombards the semiconductor substrate with oxide layer impurities under the action of first output power to obtain a semiconductor substrate with preliminary impurity removal;
and under the action of second output power, the reaction chamber bombards the semiconductor substrate from which the preliminary impurities are removed by the argon ions, so that the target semiconductor substrate is obtained.
The application is further configured to: the method for obtaining the target cobalt silicide film layer on the target wafer specifically comprises the following steps:
the reaction chamber carries out first rapid annealing treatment on the cobalt film under the condition of a first annealing temperature to obtain an initial cobalt silicide film layer;
and the reaction chamber carries out second rapid annealing treatment on the cobalt film under the condition of a second annealing temperature to obtain a low-resistance target cobalt silicide film layer, wherein the second annealing temperature is higher than the first annealing temperature.
The application is further configured to: the detecting that the sputtering pressure in the reaction chamber is stabilized at the second target pressure specifically includes:
acquiring a corresponding real-time sputtering pressure data set in the reaction chamber under a dynamic time set;
acquiring a maximum pressure difference value based on the difference value between the real-time sputtering pressure data set and the second target pressure;
and if the absolute value of the maximum pressure difference value is less than or equal to 0.05, stabilizing the sputtering pressure in the reaction chamber at the second target pressure.
The application is further configured to: the obtaining a maximum pressure difference value based on the difference value between the real-time sputtering pressure data set and the second target pressure specifically includes:
setting an initial time point and a dynamic time length of the dynamic time set, wherein the dynamic time length comprises 0.5s, 2s, 6s and 10s;
acquiring the corresponding initial time sputtering pressure in the reaction chamber at the initial time point and the corresponding superposition time sputtering pressure in the reaction chamber after the dynamic time is superposed at the initial time point;
and adopting the initial time sputtering pressure and the superposition time sputtering pressure to respectively obtain differences with the second target pressure, and obtaining the maximum pressure difference.
The application is further configured to: the first gas flow is greater than the second gas flow.
The application is further configured to: the first gas flow is 80-100sccm, the second gas flow is 40-50sccm, the first target pressure is 0.5-2 mtorr, and the second target pressure is 0.25-1 mtorr.
The application is further configured to: the first gas flow is 90sccm, the second gas flow is 45sccm, the first target pressure is 1mtorr, and the second target pressure is 0.5mtorr.
The application is further configured to: the inert gas is Ar, ne or Kr.
The application is further configured to: the first annealing temperature is 350-450 ℃, and the second annealing temperature is 500-700 ℃.
In summary, compared with the prior art, the present application discloses a method for preparing a semiconductor cobalt silicide film layer, which comprises the steps of introducing an inert gas with a first gas flow into a reaction chamber to enable a sputtering pressure to reach a first target pressure, performing an instantaneous ignition action of inert gas pre-ignition based on the first gas flow, enabling the inert gas to be instantaneously started, further adjusting the inert gas flow to be a second gas flow, keeping the sputtering pressure stable at a second target pressure state, and then executing a conventional ignition action, thereby depositing a cobalt film on a target semiconductor substrate by an abnormal glow discharge cobalt target, and finally forming a target cobalt silicide film layer. That is, by the arrangement, the ignition failure frequency of the cobalt silicide film layer in the vacuum sputtering deposition process is reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following description will briefly explain the drawings needed in the description of the embodiments, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a flowchart of a method for preparing a semiconductor cobalt silicide film layer according to the present embodiment;
fig. 2 is a block diagram of a semiconductor cobalt silicide film layer preparation system of the present embodiment.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples are not representative of all implementations consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with some aspects of the present application as detailed in the accompanying claims.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, the element defined by the phrase "comprising one … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element, and furthermore, elements having the same name in different embodiments of the present application may have the same meaning or may have different meanings, a particular meaning of which is to be determined by its interpretation in this particular embodiment or by further combining the context of this particular embodiment.
It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the present application.
In the following description, suffixes such as "module", "component", or "unit" for representing elements are used only for facilitating the description of the present application, and are not of specific significance per se. Thus, "module," "component," or "unit" may be used in combination.
In the description of the present application, it should be noted that the positional or positional relationship indicated by the terms such as "upper", "lower", "left", "right", "inner", "outer", etc. are based on the positional or positional relationship shown in the drawings, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the apparatus or element in question must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
The technical solutions shown in the present application will be described in detail by specific examples. The following description of the embodiments is not intended to limit the priority of the embodiments.
As described in the background art, when the vacuum sputtering machine in the prior art performs ignition and glow-starting to apply high voltage, the undesirable phenomenon of frequent ignition failure exists based on the parameter changes such as pressure and gas concentration in the chamber.
Referring to fig. 1, a flowchart of a method for preparing a semiconductor cobalt silicide film layer according to the present embodiment specifically includes:
s101, forming a target semiconductor substrate in a reaction chamber with a cobalt target.
In a specific implementation process, a substrate of a semiconductor is required to be supported for the formation of a cobalt silicide film layer, so that a subsequent processing process of a semiconductor device is facilitated, specifically, a material of the semiconductor substrate in this embodiment may be monocrystalline silicon, polycrystalline silicon, amorphous silicon or doped silicon, a material of the substrate may also be a SiGe substrate, a group iii-v element compound substrate, a silicon carbide substrate or a stacked structure thereof, or a silicon-on-insulator structure, or may also be a diamond substrate or other semiconductor material substrate known to those skilled in the art, for example, a semiconductor substrate with N-type conductivity may be formed by implanting P atoms into monocrystalline silicon, or a semiconductor substrate with P-type conductivity may be formed by implanting B atoms into monocrystalline silicon, so as to improve the selectivity of the material and the adaptability to the actual production environment.
Further, the formation of the target semiconductor substrate, i.e., before forming the target semiconductor substrate in the reaction chamber with the cobalt target, may specifically include:
step 1, placing a semiconductor substrate with oxide layer impurities in a reaction chamber, wherein the oxide layer impurities are oxide layers naturally formed by the semiconductor substrate, and aiming at adhering impurity particles outside the natural oxide layers, the semiconductor substrate can be removed by washing with deionized water.
And 2, introducing argon into the reaction chamber, and plasmatizing the argon into argon ions.
And 3, bombarding the semiconductor substrate with the oxide layer impurities by the argon ions in the reaction chamber under the action of the first output power to obtain the semiconductor substrate with the preliminary impurities removed, namely removing part of the oxide layer impurities of the semiconductor substrate by utilizing plasma etching with specific power.
And 4, bombarding the semiconductor substrate subjected to primary impurity removal by the argon ions in the reaction chamber under the action of the second output power to obtain the target semiconductor substrate, wherein the first output power of the reaction chamber is larger than the second output power of the reaction chamber, namely, the kinetic energy carried by the argon ions in the first etching is larger than that in the second etching in the two steps of etching oxide layer impurities, so that the purpose of etching is conveniently and rapidly carried out in high power through the step 3, and then the oxide layer impurities are finely adjusted and removed through the low-power plasma etching in the step 4, so that the purpose of not damaging the target semiconductor substrate is achieved.
In some embodiments, the first output power may be 400W and the second output power may be 200W.
It can be understood that the specific functions of the reaction chamber of the present embodiment, which are to release ionized argon or other inert gases through high voltage and guide ions to bombard the target through setting an electric field, are available to those skilled in the art according to the prior art, and the structure and working principle of the reaction chamber are not described herein.
S102, keeping introducing inert gas with a first gas flow into the reaction chamber, and enabling the sputtering pressure in the reaction chamber to reach a first target pressure.
In the present embodiment, the inert gas may be Ar, ne, or Kr.
Further, the first gas flow rate may be 80-100sccm to ensure a high gas concentration.
Further, the first target pressure may be 0.5-2 mtorr to ensure a relatively high pressure environment.
In some embodiments, the first target pressure may be 0.5mtorr, 1mtorr, 1.5mtorr, or 2mtorr.
S103, based on the first gas flow, the reaction chamber performs pre-ignition transient ignition action on the inert gas, and stops the transient ignition action after the inert gas is instantaneously started.
In this step, the continuous output of the first gas flow is maintained in the reaction chamber, and the parameter environment of the first gas flow and the first target pressure is continued, and instantaneous ignition of the inert gas is performed on the basis, so that the inert gas is instantaneously started, that is, by pre-ignition under the environment of the first gas flow and the first target pressure, the inert gas is provided with an instantaneously started plasma state, that is, the inert gas is excited, so that the basis for continuous activation of the gas is provided for the subsequent conventional ignition.
Alternatively, the first target pressure may be 0.5-2 mtorr and the first gas flow may be 80-100sccm.
In some embodiments, the first gas flow may be 90sccm.
And S104, keeping the inert gas with the second gas flow rate to the reaction chamber, and after detecting that the sputtering pressure in the reaction chamber is stabilized at the second target pressure, executing the conventional ignition action by the reaction chamber to trigger the abnormal glow discharge of the inert gas.
In this embodiment, the second gas flow is 40-50sccm and the second target pressure is 0.25-1 mtorr.
In some embodiments, the second gas flow is 45sccm.
The first gas flow is larger than the second gas flow so as to highlight the relative high-pressure high-gas concentration environment during the pre-ignition action, so that the inert gas can be easily subjected to instantaneous ignition and glow starting in the pre-ignition stage, and the conventional ignition action under the working condition of the second gas flow is convenient to succeed, so that the ignition failure frequency of the reaction chamber for performing the conventional ignition action by vacuum sputtering deposition is optimized.
Further, the stability of the second target pressure parameter is also very beneficial to the success of the conventional ignition operation, and in this step, detecting that the sputtering pressure in the reaction chamber is stabilized at the second target pressure may specifically include:
step one, acquiring a corresponding real-time sputtering pressure data set in a reaction chamber under a dynamic time set.
And step two, obtaining a maximum pressure difference value based on the difference value between the real-time sputtering pressure data set and the second target pressure.
In some embodiments, the second target pressure is 0.5mtorr.
And step three, if the absolute value of the maximum pressure difference value is less than or equal to 0.05, the sputtering pressure in the reaction chamber is stabilized at the second target pressure.
It should be noted that, in the second step, the obtaining the maximum pressure difference may specifically include: setting an initial time point and a dynamic time length of a dynamic time set; the method comprises the steps of obtaining the corresponding initial time sputtering pressure in a reaction chamber at an initial time point and the corresponding superposition time sputtering pressure in the reaction chamber after the dynamic duration is superposed at the initial time point; and respectively obtaining a maximum pressure difference value by adopting the initial time sputtering pressure and the superposition time sputtering pressure to obtain a difference with the second target pressure.
In the implementation process, the dynamic time length includes 0.5s, 2s, 6s and 10s, i.e. the initial time point is set to be the original time X, the corresponding sputtering pressure of the initial time is Y, and then the corresponding sputtering pressure of the superposition time in the reaction chamber after the superposition of the dynamic time length at the initial time point is Y 1 I.e. Y and Y 1 And respectively obtaining differences with the second target pressure, wherein the maximum difference value is the maximum pressure difference value.
In some embodiments, multiple sets or all of dynamic durations may be selected, that is, the dynamic durations are respectively overlapped with one or more of the initial time points 0.5s, 2s, 6s, and 10s, so as to obtain corresponding overlapped time sputtering pressures, so that the initial time sputtering pressures and the overlapped time sputtering pressures are respectively different from the second target pressure by multiple values, stability of the maximum pressure difference is improved, and further, by judging the absolute value, the sputtering pressure in the reaction chamber is ensured to be stable at the second target pressure, thereby ensuring pressure parameters of the conventional ignition action, and reducing the ignition failure frequency of the reaction chamber performing the conventional ignition action by vacuum sputtering deposition.
S105, based on the second gas flow, the inert gas bombards the cobalt target material through abnormal glow discharge, and a cobalt film is deposited on the target semiconductor substrate.
In this step, the deposited thickness of the cobalt film may be 2nm, 5nm, 7nm or 12nm.
In some embodiments, prior to forming the cobalt film of the target thickness, this may also be achieved by:
and after the inert gas is instantaneously started, adjusting the flow rate of the inert gas introduced into the reaction chamber to be a second gas flow rate, keeping the sputtering pressure in the reaction chamber stable at a second target pressure, continuously bombarding a cobalt target material by the inert gas based on the stable second target pressure, and depositing a cobalt film on the target semiconductor substrate.
In the method, the conventional ignition step is saved by changing the gas flow, and the excitation state of the pre-ignited inert gas after instantaneous ignition is maintained by changing the flow of the inert gas introduced into the reaction chamber and stabilizing the sputtering pressure, so that the cobalt film with the target thickness is formed.
And S106, after forming the cobalt film with the target thickness, the inert gas is discharged from the reaction chamber, and the initial pressure in the reaction chamber is recovered.
It will be appreciated that the target thickness of the cobalt film may also vary according to environmental requirements, depending on the actual parameters and requirements of the semiconductor device, and the embodiment does not require specific parameters for the target thickness.
And S107, obtaining a target cobalt silicide film layer on the target semiconductor substrate.
In this step, a target cobalt silicide film layer is obtained on a target wafer, which specifically includes:
under the condition of a first annealing temperature, the reaction chamber carries out a first rapid annealing treatment on the cobalt film to obtain an initial cobalt silicide film layer;
and carrying out second rapid annealing treatment on the cobalt film by the reaction chamber under the condition of a second annealing temperature to obtain a target cobalt silicide film layer with low resistance, wherein the second annealing temperature is higher than the first annealing temperature.
The first annealing temperature is 350-450 ℃ and the second annealing temperature is 500-700 ℃, so that the cobalt film on the target semiconductor substrate is converted into the target cobalt silicide film layer through two times of annealing.
It should be noted that, based on the design that the first gas flow is greater than the second gas flow, on one hand, the instantaneous ignition of the pre-ignition is convenient under the conditions of relatively high flow rate and high gas concentration, and the instantaneous ignition action is stopped after the instantaneous ignition of the inert gas, so that cobalt film deposition caused by overlong pre-ignition is avoided, that is, although the speed of cobalt film deposition under the high flow rate environment is higher, the deposition is unstable, and cobalt film with the target thickness cannot be deposited on the target semiconductor substrate, and it can be understood that the lower the pressure in the reaction chamber is, the greater the average degree of freedom of inert gas molecules is, so that the probability of mutual collision among particles can be reduced, and further more directional deposition is achieved, so that the step coverage rate is enhanced and the asymmetry is reduced.
Referring to fig. 2, the semiconductor cobalt silicide film layer preparation system 20 specifically includes:
an initiation module 21 for forming a target semiconductor substrate within a reaction chamber having a cobalt target.
The first control module 22 is configured to maintain the inert gas flowing into the reaction chamber at a first gas flow rate, and to enable the sputtering pressure in the reaction chamber to reach a first target pressure.
The pre-ignition module 23 is configured to perform a pre-ignition transient ignition operation of the reaction chamber with respect to the inert gas based on the first gas flow rate, and stop the transient ignition operation after the inert gas transient ignition.
And a second control module 24 for maintaining the flow of inert gas into the reaction chamber at a second gas flow rate and detecting that the sputtering pressure in the reaction chamber is stabilized at a second target pressure.
Wherein the second control module 24 further comprises:
the acquiring unit 301 acquires a real-time sputtering pressure data set corresponding to the reaction chamber under the dynamic time set.
The difference unit 302 obtains the maximum pressure difference value based on the difference between the real-time sputtering pressure data set and the second target pressure.
And a judging unit 303 for stabilizing the sputtering pressure in the reaction chamber at the second target pressure if the absolute value of the maximum pressure difference is less than or equal to 0.05.
The ignition module 25 is used for the reaction chamber to execute normal ignition action and trigger abnormal glow discharge of inert gas.
A deposition module 26 for depositing a cobalt film on the target semiconductor substrate by bombarding the cobalt target with an abnormal glow discharge based on the second gas flow.
And a recovery module 27 for exhausting the inert gas from the reaction chamber and recovering the initial pressure in the reaction chamber after forming the cobalt film of the target thickness.
An annealing module 28 is used to obtain a target cobalt silicide film layer on the target semiconductor substrate.
Specifically, the reaction chamber carries out first rapid annealing treatment on the cobalt film under the condition of a first annealing temperature to obtain an initial cobalt silicide film layer;
and carrying out second rapid annealing treatment on the cobalt film by the reaction chamber under the condition of a second annealing temperature to obtain a target cobalt silicide film layer with low resistance, wherein the second annealing temperature is higher than the first annealing temperature.
The first annealing temperature is 350-450 ℃ and the second annealing temperature is 500-700 ℃, so that the cobalt film on the target semiconductor substrate is converted into the target cobalt silicide film layer through two times of annealing.
In summary, the application discloses a method for preparing a semiconductor cobalt silicide film layer, which comprises the steps of introducing inert gas with a first gas flow into a reaction chamber to enable sputtering pressure to reach a first target pressure, performing instantaneous ignition action of inert gas pre-ignition based on the first gas flow, enabling the inert gas to be instantaneously started, adjusting the inert gas flow to a second gas flow, keeping the sputtering pressure stable in a second target pressure state, and executing conventional ignition action, so that a cobalt film is deposited on a target semiconductor substrate by bombarding a cobalt target material through abnormal glow discharge, and finally forming the target cobalt silicide film layer. That is, by the arrangement, the ignition failure frequency of the cobalt silicide film layer in the vacuum sputtering deposition process is reduced.
The foregoing has outlined rather broadly the more detailed description of the present application, wherein specific examples have been provided to illustrate the principles and embodiments of the present application, the description of the examples being provided solely to assist in the understanding of the core concepts of the present application; meanwhile, those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, and the present description should not be construed as limiting the present application in view of the above.
Claims (10)
1. The preparation method of the semiconductor cobalt silicide film layer is characterized by comprising the following steps of:
forming a target semiconductor substrate in a reaction chamber with a cobalt target;
maintaining the flow of inert gas into the reaction chamber and enabling the sputtering pressure in the reaction chamber to reach a first target pressure;
based on the first gas flow, the reaction chamber performs a pre-ignition transient action for the inert gas, and stops the transient ignition action after the inert gas is instantaneously ignited;
maintaining the inert gas with the second gas flow rate to the reaction chamber, detecting that the sputtering pressure in the reaction chamber is stabilized at a second target pressure, and then executing a conventional ignition action by the reaction chamber to trigger abnormal glow discharge of the inert gas;
based on the second gas flow, the inert gas bombards the cobalt target material through abnormal glow discharge, and a cobalt film is deposited on the target semiconductor substrate;
after forming the cobalt film with the target thickness, the reaction chamber discharges the inert gas and recovers the initial pressure in the reaction chamber;
and obtaining a target cobalt silicide film layer on the target semiconductor substrate.
2. The method for preparing a cobalt silicide film layer according to claim 1, wherein before forming a target semiconductor substrate in a reaction chamber with a cobalt target, the method further comprises:
placing a semiconductor substrate with oxide layer impurities in a reaction chamber;
argon is introduced into the reaction chamber, and the argon is plasmized into argon ions;
the reaction chamber bombards the semiconductor substrate with oxide layer impurities under the action of first output power to obtain a semiconductor substrate with preliminary impurity removal;
and under the action of second output power, the reaction chamber bombards the semiconductor substrate from which the preliminary impurities are removed by the argon ions, so that the target semiconductor substrate is obtained.
3. The method for preparing a cobalt silicide film according to claim 1, wherein the step of obtaining a target cobalt silicide film on the target wafer comprises:
the reaction chamber carries out first rapid annealing treatment on the cobalt film under the condition of a first annealing temperature to obtain an initial cobalt silicide film layer;
and the reaction chamber carries out second rapid annealing treatment on the cobalt film under the condition of a second annealing temperature to obtain a low-resistance target cobalt silicide film layer, wherein the second annealing temperature is higher than the first annealing temperature.
4. The method for preparing a cobalt silicide film layer according to claim 1, wherein the detecting that the sputtering pressure in the reaction chamber is stabilized at the second target pressure comprises:
acquiring a corresponding real-time sputtering pressure data set in the reaction chamber under a dynamic time set;
acquiring a maximum pressure difference value based on the difference value between the real-time sputtering pressure data set and the second target pressure;
and if the absolute value of the maximum pressure difference value is less than or equal to 0.05, stabilizing the sputtering pressure in the reaction chamber at the second target pressure.
5. The method of claim 4, wherein the obtaining a maximum pressure difference based on the difference between the real-time sputter pressure dataset and the second target pressure, specifically comprises:
setting an initial time point and a dynamic time length of the dynamic time set, wherein the dynamic time length comprises 0.5s, 2s, 6s and 10s;
acquiring the corresponding initial time sputtering pressure in the reaction chamber at the initial time point and the corresponding superposition time sputtering pressure in the reaction chamber after the dynamic time is superposed at the initial time point;
and adopting the initial time sputtering pressure and the superposition time sputtering pressure to respectively obtain differences with the second target pressure, and obtaining the maximum pressure difference.
6. The method of claim 5, wherein the first gas flow is greater than the second gas flow.
7. The method of claim 1, wherein the first gas flow is 80-100sccm, the second gas flow is 40-50sccm, the first target pressure is 0.5-2 mtorr, and the second target pressure is 0.25-1 mtorr.
8. The method of claim 1, wherein the first gas flow is 90 seem, the second gas flow is 45 seem, the first target pressure is 1mtorr, and the second target pressure is 0.5mtorr.
9. The method of claim 1, wherein the inert gas is Ar, ne, or Kr.
10. The method of claim 3, wherein the first annealing temperature is 350-450 ℃ and the second annealing temperature is 500-700 ℃.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01215976A (en) * | 1988-02-24 | 1989-08-29 | Fujitsu Ltd | Sputtering device provided with self-diagnostic function |
| CN1260842A (en) * | 1997-05-22 | 2000-07-19 | 东京电子有限公司 | Method and apparatus for low pressure sputtering |
| US6156164A (en) * | 1999-06-22 | 2000-12-05 | Tokyo Electron Limited | Virtual shutter method and apparatus for preventing damage to gallium arsenide substrates during processing |
| CN113257663A (en) * | 2021-07-15 | 2021-08-13 | 广州粤芯半导体技术有限公司 | Method for forming cobalt silicide film layer |
-
2023
- 2023-05-04 CN CN202310488816.2A patent/CN116200707A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01215976A (en) * | 1988-02-24 | 1989-08-29 | Fujitsu Ltd | Sputtering device provided with self-diagnostic function |
| CN1260842A (en) * | 1997-05-22 | 2000-07-19 | 东京电子有限公司 | Method and apparatus for low pressure sputtering |
| US6156164A (en) * | 1999-06-22 | 2000-12-05 | Tokyo Electron Limited | Virtual shutter method and apparatus for preventing damage to gallium arsenide substrates during processing |
| CN113257663A (en) * | 2021-07-15 | 2021-08-13 | 广州粤芯半导体技术有限公司 | Method for forming cobalt silicide film layer |
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