CN113257663A - Method for forming cobalt silicide film layer - Google Patents
Method for forming cobalt silicide film layer Download PDFInfo
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- CN113257663A CN113257663A CN202110798160.5A CN202110798160A CN113257663A CN 113257663 A CN113257663 A CN 113257663A CN 202110798160 A CN202110798160 A CN 202110798160A CN 113257663 A CN113257663 A CN 113257663A
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- 238000000034 method Methods 0.000 title claims abstract description 124
- 229910017052 cobalt Inorganic materials 0.000 title claims abstract description 55
- 239000010941 cobalt Substances 0.000 title claims abstract description 55
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 229910021332 silicide Inorganic materials 0.000 title claims abstract description 52
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 230000008569 process Effects 0.000 claims abstract description 92
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 229910052786 argon Inorganic materials 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 11
- -1 argon ions Chemical class 0.000 claims description 10
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 230000009466 transformation Effects 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 20
- 238000004140 cleaning Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention provides a method for forming a cobalt silicide film layer, which comprises the following steps: providing a semiconductor substrate, wherein a natural oxide layer is formed on the surface of the semiconductor substrate, and the natural oxide layer comprises three elements of nitrogen, oxygen and silicon; physically removing the natural oxide layer by a first radio frequency plasma removing process and a second radio frequency plasma removing process, wherein the process parameters of the first radio frequency plasma removing process are greater than those of the second radio frequency plasma removing process; the cobalt silicide film layer is formed on the semiconductor substrate, and the natural oxidation layer containing nitrogen elements can be completely removed, so that the continuity of the subsequently formed cobalt silicide film layer is good, and the performance of the CIS/OTP/MTP device is improved.
Description
Technical Field
The invention relates to the technical field of integrated circuit manufacturing processes, in particular to a method for forming a cobalt silicide film layer.
Background
With the development of integrated circuits, silicide processes are being introduced into the fabrication process. And evolved from the original polycide (silicide on polysilicon) process to the salicide (silicide) process of today. In the 0.18 μm and 0.13 μm processes, cobalt silicide (CoSi) is commonly used2）。It has some advantages as follows: low resistivity, good thermal stability, no increase in silicide formation temperature with line width reduction, etc.
The existing methods for preparing cobalt silicide roughly have three types: one is to directly deposit Co (cobalt) on the silicon surface by PVD (physical vapor deposition); the second one is to adopt double-layer metal, the main body is also Co, and a layer of very thin Ti (titanium) metal is deposited under the Co metal by PVD; the third is also a double layer metal, where a very thin layer of Ti metal, or TiN (titanium nitride) metal compound, is PCD deposited on the surface of Co metal, and the third method of formation is widely used.
In the third forming method, in order to form cobalt silicide, before cobalt is deposited, the surface of the wafer needs to be cleaned to remove naturally formed SiO with granular impurities on the surface of the wafer2And (5) film layer. The main current methods for cleaning the surface of the wafer are: removing partial thickness of SiO by wet etching process (using dilute hydrofluoric acid solution)2A film layer, and physically bombarding the surface of the wafer with argon ions by using a PVD pre-cleaning chamber to remove the remaining SiO2And (5) film layer. For a CIS (CMOS Image Sensor )/OTP (One Time Programmable)/MTP (Multi-Time Programmable) chip using a nitrogen-containing oxide layer as a barrier layer before a cleaning process, a discontinuous cobalt silicide film layer is obtained by using the above-mentioned forming method.
Disclosure of Invention
The invention aims to provide a method for forming a cobalt silicide film layer, which aims at the manufacturing of a CIS/OTP/MTP chip by adopting a nitrogen-containing oxide layer as a barrier layer before a cleaning process, can obtain a continuous cobalt silicide film layer and improves the performance of a CIS/OTP/MTP device.
In order to solve the above problems, the present invention provides a method for forming a cobalt silicide film, comprising the following steps:
providing a semiconductor substrate, wherein a natural oxide layer is formed on the surface of the semiconductor substrate, and the natural oxide layer comprises three elements of nitrogen, oxygen and silicon;
physically removing the natural oxide layer through a first radio frequency plasma removing process and a second radio frequency plasma removing process, wherein the process parameters of the first radio frequency plasma removing process are greater than those of the second radio frequency plasma removing process; and
and forming a cobalt silicide film layer on the semiconductor substrate.
Optionally, the thickness of the natural oxide layer is 10A-20A.
Optionally, the first rf plasma removal process and the second rf plasma removal process are both performed in a plasma etch reactor.
Further, the plasma etching reactor comprises a power supply RF generator and a bias RF generator, wherein the power supply RF generator is used for ionizing gas, and the gas of the first radio frequency plasma removing process and the gas of the second radio frequency plasma removing process are inert gases.
Further, the gas of the first radio frequency plasma removing process and the gas of the second radio frequency plasma removing process are both argon;
the power supply RF generator is used for ionizing argon gas into argon ions and is positioned above the chamber of the plasma etching reactor;
the bias RF generator is located below the chamber and is used to apply a bias below the wafer to attract the argon ions to physically bombard the surface of the wafer.
Further, the parameters of the first rf plasma removal process are: the power of the power RF generator is 400W-500W, and the power of the bias RF generator is 300W-400W.
Further, after the first rf plasma removal process, the removal thickness of the natural oxide layer is 2/3 of the total thickness of the natural oxide layer.
Further, the parameters of the second rf plasma removal process are: the power of the power RF generator is 200W-300W, and the power of the bias RF generator is 150W-250W.
Further, the second radio frequency plasma removes the residual thickness of the natural oxide layer.
Optionally, the forming a cobalt silicide film layer on the semiconductor substrate includes:
forming a cobalt layer and a titanium nitride layer on the semiconductor substrate in sequence;
performing a first annealing process to complete a first crystal form transformation;
removing the cobalt film layer and the titanium nitride film layer without initial cobalt silicide; and
and performing a second annealing process to form the cobalt silicide.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a method for forming a cobalt silicide film layer, which comprises the following steps: providing a semiconductor substrate, wherein a natural oxide layer is formed on the surface of the semiconductor substrate, and the natural oxide layer comprises three elements of nitrogen, oxygen and silicon; physically removing the natural oxide layer through a first radio frequency plasma removing process and a second radio frequency plasma removing process, wherein the process parameters of the first radio frequency plasma removing process are greater than those of the second radio frequency plasma removing process; and forming a cobalt silicide film layer on the semiconductor substrate. According to the method, the natural oxide layer is physically removed through a first radio frequency plasma removal process and a second radio frequency plasma removal process, wherein the process parameters of the first radio frequency plasma removal process are greater than those of the second radio frequency plasma removal process to remove the natural oxide layer, the natural oxide layer containing nitrogen elements can be completely removed, the continuity of a subsequently formed cobalt silicide film layer is good, and the performance of a CIS/OTP/MTP device is improved.
Drawings
FIGS. 1a-1c are schematic diagrams illustrating the analysis of discontinuous cobalt silicide film formation;
fig. 2 is a schematic flow chart illustrating a method for forming a cobalt silicide film according to an embodiment of the invention.
Description of reference numerals:
a-undesirable substances.
Detailed Description
For CIS/OTP/MTP chips that use a nitrogen-containing oxide layer as a barrier layer before the cleaning process, a discontinuous cobalt silicide film layer is easily obtained by using cobalt silicide prepared after the cleaning process of the wafer surface as described in the background art.
As shown in fig. 1a-1c, it can be seen in the TEM image of fig. 1a that there is a white undesirable substance a above the cobalt silicide film layer, so that the cobalt silicide film layer has inconsistent color, i.e. the formed cobalt silicide film layer is discontinuous. As can be seen from the SEM image of fig. 1b, a large amount of white undesirable substance a is present on the wafer surface, and as can be seen from the EDX image of fig. 1c, the white undesirable substance a is mainly composed of three elements, i.e., nitrogen, oxygen, and silicon. The three elements are SiO formed on the surface of the wafer due to the fact that a nitrogen-containing oxide layer is used as a barrier layer before the surface of the wafer is cleaned, and nitrogen is introduced during the formation of the barrier layer2The film layer contains nitrogen element which makes the SiO in the cleaning treatment of the wafer surface2The film layer has poor removal effect, so that the problem of discontinuity of the cobalt silicide film layer is caused when the cobalt silicide film layer is formed, and the problem seriously influences the performance of the CIS/OTP/MTP and other devices.
A method of forming a cobalt silicide film according to the present invention will be described in further detail below. The present invention will now be described in more detail with reference to the accompanying drawings, in which preferred embodiments of the invention are shown, it being understood that one skilled in the art may modify the invention herein described while still achieving the advantageous effects of the invention. Accordingly, the following description should be construed as broadly as possible to those skilled in the art and not as limiting the invention.
In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific details must be set forth in order to achieve the developer's specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another. Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art.
In order to make the objects and features of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings. It is to be noted that the drawings are in a very simplified form and are all used in a non-precise ratio for the purpose of facilitating and distinctly aiding in the description of the embodiments of the invention.
Fig. 2 is a schematic flow chart of a method for forming a cobalt silicide film layer according to the present embodiment. As shown in fig. 2, the present embodiment provides a method for forming a cobalt silicide film, including the following steps:
step S10: providing a semiconductor substrate, wherein a natural oxide layer is formed on the surface of the semiconductor substrate, and the natural oxide layer comprises three elements of nitrogen, oxygen and silicon;
step S20: physically removing the natural oxide layer through a first radio frequency plasma removing process and a second radio frequency plasma removing process, wherein the process parameters of the first radio frequency plasma removing process are greater than those of the second radio frequency plasma removing process; and
step S30: and forming a cobalt silicide film layer on the semiconductor substrate.
A method for forming a metal silicide disclosed in this embodiment will be described in more detail below.
Step S10 is performed first, and a semiconductor substrate is provided, where a natural oxide layer is formed on a surface of the semiconductor substrate, and the natural oxide layer includes three elements, i.e., nitrogen, oxygen, and silicon.
The semiconductor substrate may be any substrate known to those skilled in the art for supporting semiconductor integrated circuit components, such as a die, or a wafer processed by an epitaxial growth process, and may be a platform for subsequent processes. In this embodiment, the semiconductor substrate has other elements thereon. Wherein the thickness of the natural oxide layer is, for example, 10A-20A.
And step S20 is executed to physically remove the natural oxide layer through a first rf plasma removal process and a second rf plasma removal process, where a process parameter of the first rf plasma removal process is greater than a process parameter of the second rf plasma removal process.
The first and second RF plasma removal processes are performed in a plasma etch reactor, which may include a power RF generator for ionizing a gas, and a bias RF generator for ionizing argon (Ar) into argon ions (Ar +), wherein the power RF generator is located above a chamber of the plasma etch reactor, and the bias RF generator is located below the chamber for applying a bias voltage below the wafer to attract the argon ions to physically bombard the surface of the wafer.
As the power of the power RF generator and bias RF generator is varied, the rate at which argon ions bombard the surface of the wafer can be varied. In detail, when the power of the power source RF generator and the bias RF generator is increased, the speed of the argon ions bombarding the surface of the wafer is increased, and the removal capability of the natural oxide layer is increased along with the increase of the power source RF generator and the bias RF generator. However, if the power of the power supply RF generator and the bias RF generator is higher, the influence of the uniformity of the etching of the surface of the wafer bombarded by the argon ions is more obvious, and the damage to the surface of the wafer is also higher; the less the power of the power RF generator and the bias RF generator, the less effective the removal of the native oxide layer on the surface of the wafer. Therefore, the nitrogen-containing natural oxide layer can be effectively removed by adopting the mode that the technological parameters of the first radio frequency plasma removal process are larger than those of the second radio frequency plasma removal process, and the surface of the wafer can not be damaged. Compared with the prior art of primary radio frequency plasma removal process (in the prior art, the primary radio frequency plasma removal process parameters are that the power of the power supply RF generator is 250W, and the power of the bias RF generator is 200W), the method has good removal effect of the natural oxide layer. The parameters of the first RF plasma removing process are as follows: the power of the power supply RF generator is 400W-500W, and specific examples are 400W, 410W, 420W, 430W, 440W, 450W, 460W, 470W, 480W, 490W and 500W; the bias RF generator has a power of 300W to 400W, such as 300W, 310W, 320W, 330W, 340W, 350W, 360W, 370W, 380W, 390W, 400W. The native oxide layer is removed to a thickness of 2/3 a total thickness of the native oxide layer.
The parameters of the second radio frequency plasma removing process are as follows: the power of the power RF generator is 200W-300W, and specific examples are 200W, 210W, 220W, 230W, 240W, 250W, 260W, 270W, 280W, 290W and 300W; the bias RF generator has a power of 150W-250W, such as 150W, 160W, 170W, 180W, 190W, 200W, 210W, 220W, 230W, 240W, 250W, to remove the residual thickness of the native oxide layer.
In the step, the natural oxide layer is physically removed in the same machine through the radio frequency plasma removal process with two process parameters, so that the removal process of the natural oxide layer is simplified, the production efficiency is improved, the production cost is reduced, the transmission of wafers among different machines is saved, the generation of particle impurities is reduced, and the natural oxide layer containing nitrogen elements can be completely removed in the step.
Next, in step S30, a cobalt silicide film layer is formed on the semiconductor substrate. Because the natural oxide layer containing nitrogen elements does not remain on the surface of the semiconductor substrate, the cobalt silicide film layer formed in the step is continuous and uniform, and the performance of the CIS/OTP/MTP device and other devices is high.
The method specifically comprises the following steps:
firstly, forming a cobalt layer and a titanium nitride layer on the semiconductor substrate in sequence; then, a first annealing process is carried out to complete the first crystal form transformation, namely initial cobalt silicide (CoSi) is formed; then, removing the cobalt film layer and the titanium nitride film layer without initial cobalt silicide; next, a second annealing process is performed to form low-resistance cobalt silicide (CoSi), i.e., a target cobalt silicide (CoSi) is formed.
In summary, the present invention provides a method for forming a cobalt silicide film, including the following steps: providing a semiconductor substrate, wherein a natural oxide layer is formed on the surface of the semiconductor substrate, and the natural oxide layer comprises three elements of nitrogen, oxygen and silicon; physically removing the natural oxide layer through a first radio frequency plasma removing process and a second radio frequency plasma removing process, wherein the process parameters of the first radio frequency plasma removing process are greater than those of the second radio frequency plasma removing process; and forming a cobalt silicide film layer on the semiconductor substrate. According to the method, the natural oxide layer is physically removed through a first radio frequency plasma removal process and a second radio frequency plasma removal process, wherein the process parameters of the first radio frequency plasma removal process are greater than those of the second radio frequency plasma removal process to remove the natural oxide layer, the natural oxide layer containing nitrogen elements can be completely removed, the continuity of a subsequently formed cobalt silicide film layer is good, and the performance of a CIS/OTP/MTP device is improved.
In addition, unless otherwise specified or indicated, the description of the terms "first" and "second" in the specification is only used for distinguishing various components, elements, steps and the like in the specification, and is not used for representing logical relationships or sequential relationships among the various components, elements, steps and the like.
It is to be understood that while the present invention has been described in conjunction with the preferred embodiments thereof, it is not intended to limit the invention to those embodiments. It will be apparent to those skilled in the art from this disclosure that many changes and modifications can be made, or equivalents modified, in the embodiments of the invention without departing from the scope of the invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.
Claims (10)
1. A method for forming a cobalt silicide film is characterized by comprising the following steps:
providing a semiconductor substrate, wherein a natural oxide layer is formed on the surface of the semiconductor substrate, and the natural oxide layer comprises three elements of nitrogen, oxygen and silicon;
physically removing the natural oxide layer through a first radio frequency plasma removing process and a second radio frequency plasma removing process, wherein the process parameters of the first radio frequency plasma removing process are greater than those of the second radio frequency plasma removing process; and
and forming a cobalt silicide film layer on the semiconductor substrate.
2. The method of forming of claim 1, wherein the native oxide layer has a thickness of 10 a-20 a.
3. The method of forming of claim 1, wherein the first rf plasma removal process and the second rf plasma removal process are performed in a plasma etch reactor.
4. The method of forming as claimed in claim 3 wherein the plasma etch reactor includes a power RF generator and a bias RF generator, the power RF generator for ionizing gases, the gases of the first RF plasma removal process and the second RF plasma removal process being inert gases.
5. The method of forming of claim 4, wherein the gases of the first rf plasma removal process and the second rf plasma removal process are argon;
the power supply RF generator is used for ionizing argon gas into argon ions and is positioned above the chamber of the plasma etching reactor;
the bias RF generator is located below the chamber and is used to apply a bias below the wafer to attract the argon ions to physically bombard the surface of the wafer.
6. The method of claim 4, wherein the parameters of the first RF plasma removal process are: the power of the power RF generator is 400W-500W, and the power of the bias RF generator is 300W-400W.
7. The method of claim 6, wherein after the first RF plasma removal process, the native oxide layer is removed to a thickness of 2/3 times a total thickness of the native oxide layer.
8. The method of claim 4, wherein the parameters of the second RF plasma removal process are: the power of the power RF generator is 200W-300W, and the power of the bias RF generator is 150W-250W.
9. The method of claim 8, wherein the second rf plasma removes a remaining thickness of the native oxide layer.
10. The method of forming of claim 1, wherein forming a cobalt silicide film layer on the semiconductor substrate comprises:
forming a cobalt layer and a titanium nitride layer on the semiconductor substrate in sequence;
performing a first annealing process to complete a first crystal form transformation;
removing the cobalt film layer and the titanium nitride film layer without initial cobalt silicide; and
and performing a second annealing process to form the cobalt silicide.
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| CN116200707A (en) * | 2023-05-04 | 2023-06-02 | 粤芯半导体技术股份有限公司 | Preparation method of semiconductor cobalt silicide film layer |
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| CN112382635A (en) * | 2020-11-12 | 2021-02-19 | 上海华虹宏力半导体制造有限公司 | Method for manufacturing semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116200707A (en) * | 2023-05-04 | 2023-06-02 | 粤芯半导体技术股份有限公司 | Preparation method of semiconductor cobalt silicide film layer |
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