JPH01215793A - Apparatus for chemical vapor deposition - Google Patents
Apparatus for chemical vapor depositionInfo
- Publication number
- JPH01215793A JPH01215793A JP4153288A JP4153288A JPH01215793A JP H01215793 A JPH01215793 A JP H01215793A JP 4153288 A JP4153288 A JP 4153288A JP 4153288 A JP4153288 A JP 4153288A JP H01215793 A JPH01215793 A JP H01215793A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- silicon raw
- vapor deposition
- gas
- chemical vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 68
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 68
- 239000010703 silicon Substances 0.000 claims abstract description 68
- 239000002994 raw material Substances 0.000 claims abstract description 62
- 239000007788 liquid Substances 0.000 claims abstract description 41
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 41
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 13
- 239000005052 trichlorosilane Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 10
- 230000008016 vaporization Effects 0.000 description 8
- 238000009834 vaporization Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000005587 bubbling Effects 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 101100514842 Xenopus laevis mtus1 gene Proteins 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
（１）発明の目的
［産業上の利用分野］
本発明は、化学的蒸着装置に関し、特に化学的蒸着装置
本体に対し高速で気体を供給する高速気体供給管に対し
シリコン原料液体を噴出せしめることによりシリコン原
料液体を気化してなる化学的蒸着装置に関するものであ
る。Detailed Description of the Invention (1) Purpose of the Invention [Field of Industrial Application] The present invention relates to a chemical vapor deposition apparatus, and particularly to a high-speed gas supply pipe that supplies gas at high speed to the main body of a chemical vapor deposition apparatus. The present invention relates to a chemical vapor deposition apparatus that vaporizes a silicon raw material liquid by jetting it out.
［従来の技術］
従来この種の化学的蒸着装置としては、シリコン原料液
体を収容したシリコン原料液体に対して気体を供給する
ことによりバブリングを生じせしめそのシリコン原料液
体を気化したのち、供給管を介して化学的蒸着装置本体
すなわち反応室に供給していた。[Prior Art] Conventionally, this type of chemical vapor deposition apparatus has been constructed by supplying gas to a silicon raw material liquid containing a silicon raw material liquid to cause bubbling, vaporizing the silicon raw material liquid, and then opening a supply pipe. It was supplied to the main body of the chemical vapor deposition apparatus, that is, the reaction chamber.
［解決すべき問題点］
しかしながら従来の化学的蒸着装置では、（ｉ）バブリ
ングのための気体の流量制御上の問題からシリコン原料
ガスを６０ｇ／分以上の割合で化学的蒸着装置本体すな
わち反応室に供給することはできず、ひいてはシリコン
単結晶の成長速度が制約される欠点があり、また（ｉｉ
）シリコン原料液体の気化熱によってシリコン原料液体
の温度が低下してしまい、シリコン原料ガスを化学的蒸
着装置本体すなわち反応室に対して長時間安定して供給
てきない欠点があり、結果的に（ｉｉ ｉ）シリコンの
化学的蒸着膜を低コストで製造できない欠点があった。[Problems to be Solved] However, in conventional chemical vapor deposition equipment, (i) due to problems in controlling the flow rate of gas for bubbling, silicon source gas is supplied to the main body of the chemical vapor deposition equipment, that is, the reaction chamber, at a rate of 60 g/min or more; There is a drawback that the growth rate of silicon single crystal is restricted, and (ii
) The temperature of the silicon raw material liquid decreases due to the heat of vaporization of the silicon raw material liquid, which has the disadvantage that the silicon raw material gas cannot be stably supplied to the main body of the chemical vapor deposition apparatus, that is, the reaction chamber for a long time, and as a result ( ii i) There was a drawback that a silicon chemical vapor deposition film could not be manufactured at low cost.
そこで本発明は、これらの欠点を除去すべく、化学的蒸
着装置本体に対し高速で気体を供給する高速気体供給管
に対しシリコン原料液体を噴出せしめることによりシリ
コン原料液体を気化する化学的蒸着装置を提供せんとす
るものである。Therefore, in order to eliminate these drawbacks, the present invention provides a chemical vapor deposition apparatus that vaporizes silicon raw material liquid by jetting the silicon raw material liquid to a high-speed gas supply pipe that supplies gas at high speed to the main body of the chemical vapor deposition apparatus. We aim to provide the following.
（２）発明の構成
［問題点の解決手段］
本発明により提供される問題点の解決手段は、「（ａ）
化学的蒸着装置本体に対し高速で気体を供給する高速気
体供給管と。(2) Structure of the invention [Means for solving the problems] The means for solving the problems provided by the present invention are as follows:
A high-speed gas supply pipe that supplies gas at high speed to the main body of the chemical vapor deposition device.
（ｂ）前記高速気体供給管に対しシリコン原料液体を噴
出せしめる噴出手段と
を備えてなることを特徴とする化学的蒸着装置」
である。(b) a jetting means for spouting a silicon raw material liquid to the high-speed gas supply pipe.
［作用］
本発明にかかる化学的蒸着装置は、化学的蒸着？ｔ！１
本体に対し高速て気体を供給する高速気体供給管に対し
シリコン原料液体を噴出手段により噴出してなるので、
（ｉ）シリコン原料液体の気化熱の影響を回避しており
シリコン原料ガスを化学的蒸着装置本体に対し長時間に
わたり安定して供給せしめる作用をなし、また（ｉｉ）
バブリングのための気体を供給する必要がなくシリコン
原料ガスの供給量を増大せしめる作用をなし、ひいては
（ｉｉｉ）シリコン単結晶の成長速度を促進せしめ−る
作用をなし、結果的に（ｉｖ）シリコンの化学的蒸着膜
を低コストで製造する作用をなす。[Operation] Does the chemical vapor deposition apparatus according to the present invention perform chemical vapor deposition? T! 1
Silicon raw material liquid is spouted by a spouting means to a high-speed gas supply pipe that supplies gas to the main body at high speed.
(i) It avoids the influence of the heat of vaporization of the silicon raw material liquid and has the effect of stably supplying the silicon raw material gas to the main body of the chemical vapor deposition apparatus over a long period of time, and (ii)
There is no need to supply gas for bubbling, and the supply amount of silicon raw material gas is increased, which in turn (iii) acts to accelerate the growth rate of silicon single crystals, and as a result (iv) silicon It serves to produce chemical vapor deposited films at low cost.
［実施例］
次に本発明について、添付図面を参照しつつ具体的に説
明する。[Example] Next, the present invention will be specifically described with reference to the accompanying drawings.
第１図は、本発明にかかる化学的蒸着装置の一実施例を
示す部分断面図である。FIG. 1 is a partial sectional view showing an embodiment of a chemical vapor deposition apparatus according to the present invention.
まず本発明にかかる化学的蒸着装置の一実施例について
、その構成を詳細に説明する。First, the configuration of an embodiment of the chemical vapor deposition apparatus according to the present invention will be explained in detail.
すは本発明にかかる化学的蒸着装置であって。A chemical vapor deposition apparatus according to the present invention.
シリコン原料液体（たとえばトリクロロシラン５ｊｌｌ
Ｃ１：＋） ｌｌａを収容するシリコン原料容器１１と
、シリコン原料容器１１に対し加圧されたガス（たとえ
ば窒素ガス）を供給するためのガス供給管１２と、ガス
供給管１２に対して配設されておりガスの圧力を調節す
る圧力調節装２１１３と、化学的蒸着装置本体すなわち
反応家並に対して気体（たとえば水素ガス）を高速（た
とえば２５０ｆＬ１分以上）で供給するための高速気体
供給管１４と、シリコン原料容器１１から高速気体供給
管１４に対してシリコン原料液体１１ａを供給するため
のシリコン原料液体供給管１５と、シリコン原料液体供
給管１５に対して配設されておりシリコン原料液体１１
ａの供給量を調節する流量調節装置１６とを包有してい
る。Silicon raw material liquid (e.g. trichlorosilane 5 ml
C1:+) A silicon raw material container 11 that accommodates lla, a gas supply pipe 12 for supplying pressurized gas (for example, nitrogen gas) to the silicon raw material container 11, and a gas supply pipe 12 provided for the gas supply pipe 12. and a high-speed gas supply pipe for supplying gas (for example, hydrogen gas) at high speed (for example, 250 fL or more per minute) to the main body of the chemical vapor deposition apparatus, that is, to the reactor. 14, a silicon raw material liquid supply pipe 15 for supplying the silicon raw material liquid 11a from the silicon raw material container 11 to the high-speed gas supply pipe 14; 11
It includes a flow rate adjustment device 16 that adjusts the supply amount of a.
ここで高速気体供給管１４によって供給される気体は、
加熱手段（図示せず）により予め加熱されておれば、シ
リコン原料液体の気化を促進できるので好ましいが、本
発明は、これに限定されるものではない。Here, the gas supplied by the high-speed gas supply pipe 14 is
It is preferable that the silicon raw material liquid is preheated by a heating means (not shown) because the vaporization of the silicon raw material liquid can be promoted, but the present invention is not limited thereto.
同様にシリコン原料容器１１に対して加熱手段（図示せ
ず）を配置しシリコン原料液体１１ａを加熱しておけば
、シリコン原料液体の気化を促進できるので好ましいか
１本発明は、これに限定されるものではない。Similarly, if a heating means (not shown) is arranged in the silicon raw material container 11 and the silicon raw material liquid 11a is heated, the vaporization of the silicon raw material liquid can be promoted. It's not something you can do.
更に本発明にかかる化学的蒸着装置の一実施例について
、その作用を詳細に説明する。Furthermore, the operation of an embodiment of the chemical vapor deposition apparatus according to the present invention will be explained in detail.
化学的蒸着装置本体並に対し、高速気体供給管Ｉ４を介
して気体（たとえば水素ガス）を、矢印Ａ方向に高速（
たとえば２５０１／分以上）で持続的に供給する。A gas (for example, hydrogen gas) is supplied at high speed (for example, hydrogen gas) to the main body of the chemical vapor deposition apparatus through a high-speed gas supply pipe I4 in the direction of arrow A.
For example, it is continuously supplied at a rate of 2501/min or more.
この状態で、圧力調節装置１３を調節することにより適
度の圧力のガス（たとえば窒素ガス）を。In this state, the pressure regulator 13 is adjusted to supply gas (for example, nitrogen gas) at an appropriate pressure.
ガス供給管１２を介してシリコン原料容器０に対し供給
する。It is supplied to the silicon raw material container 0 via the gas supply pipe 12.
シリコン原料容器１１では、ガスの圧力によってシリコ
ン原料液体（たとえばトリクロロシラン５ｉｌｌＣＩ３
） ｌｌａがシリコン原料液体供給管１５へ供給される
。In the silicon raw material container 11, the silicon raw material liquid (for example, trichlorosilane 5illCI3
) lla is supplied to the silicon raw material liquid supply pipe 15.
シリコン原料液体供給管１５では、流１ｔｔＡ節装置１
６を調節することにより適度の流量とされたシリコン原
料液体１１ａが、高速気体供給管１４へ供給されている
。In the silicon raw material liquid supply pipe 15, the flow 1ttA section device 1
6, the silicon raw material liquid 11a is supplied to the high-speed gas supply pipe 14 at an appropriate flow rate.
高速気体供給管１４に供給されたシリコン原料液体１１
ａは、気化されたのち、高速の気体によって化学的蒸着
装置本体すなわち反応家並へ供給される。Silicon raw material liquid 11 supplied to high-speed gas supply pipe 14
After being vaporized, a is supplied as a high-speed gas to the main body of the chemical vapor deposition apparatus, that is, to the reactor.
加えて本発明にかかる化学的蒸着装置の一実施例につい
て、その理解を一層深めるために具体的な数値などを挙
げて説明する。In addition, an embodiment of the chemical vapor deposition apparatus according to the present invention will be described with reference to specific numerical values in order to further deepen understanding thereof.
±ＸＡ例上
シリコン原料液体１１ａとしてトリクロロシラン５ｉｌ
ＩＣＩｓを収容したシリコン原料容器１１に対し、圧力
調節装Ｒ１３を調節することにより２．５気圧の窒素ガ
スを供給しつつ、流量ｒＡ節装２１１６をｊｌｔＭシて
シリコン原料液体供給管１５を介し８００ｇ／分の割合
でトリクロロシラン５ｉＨＣＩ、を高速気体供給管１４
に噴出せしめた。±XA For example, trichlorosilane 5il is used as the silicon raw material liquid 11a.
While supplying 2.5 atmospheres of nitrogen gas to the silicon raw material container 11 containing ICIs by adjusting the pressure adjustment device R13, the flow rate rA moderation device 2116 is set to 800 g through the silicon raw material liquid supply pipe 15. Trichlorosilane 5iHCI, at a rate of 14 min.
It erupted.
高速気体供給管１４には、水素ガスが２５０〜３００１
７分の速度て供給されており、化学的蒸着装置本体すな
わち反応室」に対しトリクロロシラン５ｉｌｌＣＩ、が
ａｏｏｇ／分まで供給できた。The high-speed gas supply pipe 14 contains hydrogen gas of 250 to 3001
Trichlorosilane was supplied at a rate of 7 minutes, and 5illCI of trichlorosilane could be supplied to the main body of the chemical vapor deposition apparatus, that is, the reaction chamber, at a rate of 500 kg/min.
これにより、化学的蒸着装置本体すなわち反応家並にお
けるシリコン単結晶のエピタキシャル成長膜の成長速度
を、 ８ＩＬｍ７分まで高めることができた。As a result, the growth rate of the silicon single crystal epitaxially grown film in the main body of the chemical vapor deposition apparatus, that is, in the reactor, was able to be increased to 8ILm7min.
化学的蒸着装置本体すなわち反応家並に対し。For the chemical vapor deposition equipment itself, which is equivalent to a reactor.
安定にトリクロロシラン５ｉｌＩＣ１，を連続して供給
できる時間は、シリコン原料容器１１の容量ひいてはシ
リコン原料容器１１に収容されたシリコン原料液体１１
ａすなわちトリクロロシラン５ｉＨＣ１ｓの量によって
決定された。The time required to stably and continuously supply trichlorosilane 5ilIC1 is determined by the capacity of the silicon raw material container 11 and the silicon raw material liquid 11 contained in the silicon raw material container 11.
a, that is, the amount of trichlorosilane 5iHC1s.
以上の結果は、第１表に示されている。The above results are shown in Table 1.
匹工未
シリコン原料容器中のシリコン原料液体（ここてはトリ
クロロシラン５ｉＨＣ１ｓ）に対して窒素ガスを供給し
、バブリングによりトリクロロシラン５ｉｌｌＣｈを気
化せしめた。Nitrogen gas was supplied to the silicon raw material liquid (here, trichlorosilane 5iHC1s) in the raw silicon raw material container, and the trichlorosilane 5illCh was vaporized by bubbling.
気化されたトリクロロシランは、供給管を介して６０ｇ
／分まで化学的蒸着装置本体すなわち反応室に供給され
た。60g of vaporized trichlorosilane is supplied via the supply pipe.
/min to the chemical vapor deposition apparatus main body or reaction chamber.
これにより、化学的蒸着装置本体すなわち反応室におけ
るシリコン単結晶のエピタキシャル成長膜の成長速度は
、２ＩＬｍ／分までであった。As a result, the growth rate of the silicon single crystal epitaxially grown film in the main body of the chemical vapor deposition apparatus, that is, the reaction chamber, was up to 2 ILm/min.
化学的蒸着装置本体すなわち反応室に対し、安定にトリ
クロロシラン５ｉｌｌＣＩ＋を連続して供給できる時間
は、シリコン原料液体（ここではトリクロロシラン５ｉ
ｌｌＣＩ３）の気化熱によってその液温か低下してしま
い、約１．０時間に過ぎなかりた。The time during which trichlorosilane 5illCI+ can be stably and continuously supplied to the main body of the chemical vapor deposition apparatus, that is, the reaction chamber, is the time required to stably and continuously supply trichlorosilane 5illCI+
The temperature of the liquid decreased due to the heat of vaporization of llCI3), and it took only about 1.0 hour.
以上の結果は、第１表に併せて示されている。The above results are also shown in Table 1.
（コ）発明の効果
に、述より明らかなように本発明にかかる化学的蒸着装
置は。(g) As is clear from the above, the chemical vapor deposition apparatus according to the present invention has the following effects.
（ａ）化学的蒸着装置本体に対し高速で気体を供給する
高速気体供給管と、
（ｂ）前記高速気体供給管に対しシリコン原料液体を噴
出せしめる噴出手段と
を備えてなるので。This is because it includes (a) a high-speed gas supply pipe that supplies gas at high speed to the main body of the chemical vapor deposition apparatus, and (b) a jetting means that jets silicon raw material liquid to the high-speed gas supply pipe.
（ｉ）シリコ原料液体の気化熱の影響
を回避てき、ひいてはシリコン
原料ガスを化学的蒸着装置本体
に対し長時間にわたり安定して
供給できる効果
を有し、また
（ｉｉ）バブリングのための気体を供給する必要がなく
、シリコン原料
ガスの供給量を増大せしめるこ
とができる効果
を有し、ひいては
（ｉｉｉ）シリコン単結晶の成長速度を促進せしめるこ
とができる効果
を有し、結果的に
（ｉｖ）シリコンの化学的蒸着膜を低コストで装造でき
る効果
を有する。(i) It has the effect of avoiding the influence of the heat of vaporization of the silicon raw material liquid, which in turn has the effect of stably supplying the silicon raw material gas to the main body of the chemical vapor deposition apparatus over a long period of time, and (ii) It has the effect of avoiding the effect of the heat of vaporization of the silicon raw material liquid, and (ii) It has the effect of being able to stably supply the silicon raw material gas to the chemical vapor deposition apparatus main body over a long period of time. It has the effect of increasing the supply amount of silicon raw material gas without needing to supply it, and has the effect of increasing the growth rate of (iii) silicon single crystal, and as a result (iv) This has the effect of making it possible to fabricate a silicon chemical vapor deposition film at low cost.
第１図は１本発明にかかる化学的蒸着装置のｍ−実施例
を示す部分断面図である。
ｌＯ・・・・・・・・・・・・・化学的蒸着装置１ト・
・・・・・・・・・・・シリコン原料容器１１ａ・・・
・・・・・・・・・・シリコン原料液体１２・・・・・
・・・・・・・・ガス供給管１３・・・・・・・・・・
・・・圧力ｍ節装置１４・・・・・・・・・・・・・高
速気体供給管１５・・・・・・・・・・・・・シリコン
原料液体供給管１６・・・・・・・・・・・・・流量調
ｍ装置２０・・・・・・・・・・・・・化学的蒸着装置
本体特許出願人 東芝セラミックス株式会社代理人
弁理士 工 藤 隆 夫第１図
＼
手続補正書く自発）
１、事件の表示
特願昭６３−４１５３２号
２、発明の名称
気相成長装置（本補正により名称変更）３、補正をする
者
東芝セラミックス株式会社
４、自発補正
５、補正の対象
（１）験會せτブ明細書の発明の名称の欄
６、補正の内容
（１）腓参参妾鋳明細書の発明の名称の欄を「気相成長
装置」と補正する。
以上FIG. 1 is a partial sectional view showing an m-embodiment of a chemical vapor deposition apparatus according to the present invention. lO・・・・・・・・・・・・Chemical vapor deposition equipment 1t・
......Silicon raw material container 11a...
・・・・・・・・・Silicone raw material liquid 12・・・・・・
......Gas supply pipe 13...
. . . Pressure m moderation device 14 . . . High-speed gas supply pipe 15 . . . Silicon raw material liquid supply pipe 16 . . . ......Flow rate control device 20...Chemical vapor deposition device main body Patent applicant Toshiba Ceramics Co., Ltd. Agent
Patent attorney Takao Kudo Figure 1 ＼ Spontaneous writing of procedural amendment) 1. Indication of the case Patent Application No. 63-41532 2. Name of the invention vapor phase growth device (name changed by this amendment) 3. Person making the amendment Toshiba Ceramics Co., Ltd. 4, voluntary amendment 5, subject of amendment (1) Column 6 of the name of the invention in the test specification, content of the amendment (1) column of the name of the invention in the specification Corrected to "vapor phase growth device."that's all
Claims (4)
給する高速気体供給管と、 （ｂ）前記高速気体供給管に対しシリコン原料液体を噴
出せしめる噴出手段と を備えてなることを特徴とする化学的蒸着装置。(1) (a) a high-speed gas supply pipe that supplies gas at high speed to the main body of the chemical vapor deposition apparatus; and (b) a jetting means for jetting silicon raw material liquid to the high-speed gas supply pipe. Characteristic chemical vapor deposition equipment.
なることを特徴とする特許請求の範囲第（１）項記載の
化学的蒸着装置。(2) A chemical vapor deposition apparatus according to claim (1), wherein the silicon raw material liquid is heated by a heating means.
）項もしくは第（２）項記載の化学的蒸着装置。(3) The ejection means includes: (a) a silicon raw material container containing a silicon raw material liquid; (b) a gas supply pipe that supplies pressurized gas to the silicon raw material container; (c) the silicon raw material container. and a silicon raw material liquid supply pipe for communicating the silicon raw material container with the high speed gas supply pipe in order to supply liquid to the high speed gas supply pipe.
) or (2).
手段により予め加熱されてなることを特徴とする特許請
求の範囲第（１）項ないし第（３）項のいずれか一項記
載の化学的蒸着装置。(4) The chemical according to any one of claims (1) to (3), characterized in that the gas supplied by the high-speed gas supply pipe is heated in advance by a heating means. Targeted vapor deposition equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4153288A JPH01215793A (en) | 1988-02-24 | 1988-02-24 | Apparatus for chemical vapor deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4153288A JPH01215793A (en) | 1988-02-24 | 1988-02-24 | Apparatus for chemical vapor deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01215793A true JPH01215793A (en) | 1989-08-29 |
Family
ID=12611023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4153288A Pending JPH01215793A (en) | 1988-02-24 | 1988-02-24 | Apparatus for chemical vapor deposition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01215793A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11349397A (en) * | 1998-03-27 | 1999-12-21 | Mitsubishi Silicon America | Feeding system and process for epitaxial deposition of silicon using continuously feeding single bubbler |
-
1988
- 1988-02-24 JP JP4153288A patent/JPH01215793A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11349397A (en) * | 1998-03-27 | 1999-12-21 | Mitsubishi Silicon America | Feeding system and process for epitaxial deposition of silicon using continuously feeding single bubbler |
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