JPS63107111A - Semiconductor manufacturing apparatus using vapor growth method - Google Patents

Abstract

PURPOSE:To suppress the fluctuation of the flow ratio of raw material gases, which are supplied from bubbler containers, by containing raw materials in a plurality of the bubbler containers, and simultaneously controlling the temperatures of a plurality of the bubbler containers with the same temperature control means. CONSTITUTION:A semiconductor substrate is put in a growing furnace 11. organic metal compounds are accommodated in containers 20a and 20b of a bubbler 20 and a bubbler 15. Thereafter, carrier gases such as H2 are made to flow into said organic metal compounds through raw-material feeding pipes 2a, 3a and 4a, and the organic metal compounds are vaporized. The vapors are supplied into the growing furnace 11 through three-way valves 8, 9 and 10. The temperatures of the containers 20a and 20b of the bubbler 20, which supply the raw material gases, are simultaneously controlled with a single temperature regulating device 16. Therefore, even if the temperature of the containers 20a and 20b of the bubbler 20 are fluctuated with respect to a preset temperature, the fluctuation of the flow ratio of the raw material gases, which are supplied from the containers 20a and 20b of the bubbler 20, is suppressed to the minimum degree.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to a semiconductor manufacturing apparatus using a vapor phase growth method.

[Prior art] Recently, as a manufacturing technology for semiconductor thin film devices, for example, O
Vapor phase growth method (VPE method) of MVPE method and chloride VPE method
Attempts are being made to use the .

In the OMVPE method, an organometallic compound, which is usually stored in a bubbler in a liquid or solid state, is vaporized using a carrier gas such as H2, and the vapor of this organometallic compound is introduced into a growth furnace together with hydrides, etc., and heated. There is a vapor phase growth method 1 in which compound semiconductors are grown by exciting a chemical reaction using plasma or light energy.
-13)+ and In(CH3)3, As hydride
There are examples of growing InGaΔS on InP substrates using H3.

On the other hand, in the chloride VPE method, the chloride of a group V element, which is normally stored in a bubbler in a liquid state, is bubbled with a carrier gas such as Hz to form a chloride vapor, which is then introduced into a growth reactor. This is a vapor phase growth method in which compound semiconductors are grown by thermally chemically reacting with group III metals placed in a growth furnace in advance. There is an example in which 1nGaAsP is grown on an InP substrate.

By the way, when supplying raw material gas from a bubbler in such OMVPE method or chloride VPE method, the flow rate of raw material gas is In order to precisely control the bubbler temperature, it is essential to precisely control the temperature of the bubbler.

In response to such requirements, conventionally, as shown in FIG. 8
is provided to independently control the temperature of each bubbler 13 to 15.

In FIG. 8, ■ is a raw material gas supply pipe, the raw material gas supply pipe 1 is connected to one connection port of the three-way valve 7, and
A bubbler 13 whose carrier gas supply pipes 2a, 3a and 4a are each temperature-controlled by temperature regulators 16 to 18.
．． It is inserted into the liquid or solid raw material contained in cylindrical containers 14 and 15. The bubbler 13.1
One end of the raw material gas supply pipes 2b, 3b and 4b is connected to the upper part of each of the containers 4 and 15 in a ventilable manner, and the other ends of the raw material gas supply pipes 2b, 3b and 4b are connected to a three-way valve 8°9 and an IO valve. Each - connected to the connection port.

Further, the other two connection ports of the three-way valves 7, 8, 9 and 10 are respectively connected to the growth furnace introduction pipe 5 through which the carrier gas flows, and the exhaust pipe 6 through which the raw material gas is exhausted to the exhaust device 12. . The growth furnace introduction pipe 5 is further connected to a growth furnace 11, and the raw material gas used in the growth furnace is exhausted by an exhaust device 12.

FIG. 9 is a partially cut away perspective view of the bubblers 13, 14 and 15 of FIG. In Figure 9, bubbler 13.14
and 15 are cylindrical containers in which the above-mentioned liquid or solid raw material is accommodated, and carrier gas supply pipes and raw material gas Supply pipes 2a and 2b, 3a and 3
b, 4a and 4b are inserted, among which carrier gas supply pipe 2a.

3a and 4a are provided to be inserted into the liquid or solid material 30 contained in the containers of bubblers 13, 14 and 15.

[Problems to be Solved by the Invention] By the way, even when the temperature of the bubblers 13.14 and 15 is controlled by the temperature controllers 16.17 and I8, fluctuations with respect to the set temperature are unavoidable, and each bubbler 13.1
Each temperature regulator 16.17 provided independently for each 4 and 15
In the conventional method, the temperature of each bubbler 13, 14 and 15 is controlled by
Fluctuations in the saturated vapor pressure of the raw materials stored in each bubbler 13, 14 and 15 due to temperature fluctuations in each bubbler 13°1
Since the time between 4 and 15 is irregular, a plurality of bubblers 13, 14 and 15 are simultaneously connected to the growth furnace 11 during growth.
There was a problem in that the flow rate ratio of each raw material gas introduced into the reactor fluctuated.

An object of the present invention is to solve the above problems and to provide a vapor phase growth method that can suppress fluctuations in the flow rate ratio of each raw material gas due to temperature fluctuations of each bubbler when raw material gases are simultaneously introduced into a growth furnace from multiple bubblers during growth. The objective is to provide semiconductor manufacturing equipment according to the law.

[Means for Solving the Problems] The present invention provides a bubbler that vaporizes a liquid or solid raw material contained therein by flowing a carrier gas into the raw material, and a bubbler that vaporizes the raw material by flowing a carrier gas into the liquid or solid raw material contained therein; In a semiconductor manufacturing apparatus using a vapor phase growth method, the bubbler includes a plurality of containers separated from each other and for accommodating the raw material, and a plurality of containers of the bubbler are provided with a growth furnace for growing semiconductor crystals in a vapor phase. The invention is characterized in that it includes temperature control means for controlling the temperature in common.

[Operation] With the above configuration, the raw material is contained in the plurality of containers of the bubbler, and the temperature of the plurality of containers of the bubbler is simultaneously controlled by the temperature control means. Therefore, even if the temperature of each of the plurality of containers of the bubbler fluctuates with respect to the set temperature, the pressure increase/decrease direction and temporal change in the saturated vapor pressure of each raw material in each container of the bubbler accompanying this temperature fluctuation are the same, and variations in the flow rate ratio of each source gas supplied from each container of the bubbler are suppressed to a minimum.

[Example 1] Fig. 1 is a block diagram of a semiconductor manufacturing apparatus using a vapor phase growth method, which is an embodiment of the present invention. Components in Fig. 1 that are the same as in Fig. 8 are given the same reference numerals. ing. The semiconductor manufacturing apparatus shown in FIG. 1 is different from the conventional apparatus shown in FIG. 8 because the two bubblers 13 and 14 are
and 14 is replaced by one bubbler 20 comprising two containers 20a and 20b corresponding to 14.

2 is a partially cutaway perspective view of the bubbler 20 shown in FIG. 1, and FIG. 3 is a cross-sectional view taken along line AA' in FIG. 2. DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor manufacturing apparatus using a vapor phase growth method according to the present invention will be described below with reference to FIGS. 1 to 3.

In FIG. 1, a raw material gas supply pipe 1 is connected to one connection port of a three-way valve 7. As shown in FIG. Also, the bubbler 20 has an outer diameter of approximately 10
cx1 has a cylindrical shape with a length of about 15 ca and is made of stainless steel, and carrier gas supply pipes 2a and 3a are housed in mutually isolated containers 20a and 20b of the bubbler 20, respectively, as shown in FIG. Liquid or solid raw materials of the above-mentioned organometallic compounds or chlorides of Group V elements 3
0 (hereinafter referred to as a raw material for vapor phase growth). This raw material gas supply pipe 2
One end of b and 3b or containers 20a and 20 of bubbler 20
b is connected to the inside of the containers 20a and 20b so as to be ventilable, while the raw material gas supply pipes 2b and 3b
The other end is connected to each connection port of three-way valves 8 and 9. Further, the carrier gas supply pipe 4a is connected to the bubbler 15 so as to be inserted into the inside of the vapor phase growth raw material 30 housed in the bubbler 15, as in the conventional example. One end of the raw material gas supply pipe 4b is connected to the upper surface of the bubbler 15 to allow ventilation with the inside of the bubbler 15, while the other end of the raw material gas supply pipe 4b is connected to one connection port of the three-way valve IO. . Here, the temperature of bubblers 20 and 15 is controlled by temperature regulators I6 and 17, respectively. Further, the other two connection ports of the three-way valves 7, 8, 9 and 10 are connected to the growth furnace introduction pipe 5 through which the carrier gas flows, and the exhaust pipe 6 through which the raw material gas is exhausted to the exhaust device 12, respectively. , the growth furnace introduction pipe 5 is further connected to the growth furnace 11, and the raw material gas used in the growth furnace 11 is passed through the exhaust device 12.
Exhausted by.

In the semiconductor manufacturing apparatus configured as described above, when a desired crystal is grown on a predetermined semiconductor substrate by aligning the crystal axes using the OMVPE method, for example, the semiconductor substrate is placed in the growth furnace II and the container of the bubbler 20 is grown. Organometallic compounds are contained in 20a and 20b1 and the bubbler 15. Thereafter, the organometallic compound is vaporized by flowing a carrier gas such as 1-I into the organometallic compound through the raw material gas supply pipes 2a, 3a, and 4a, and the organometallic compound gas is distributed in three directions. It is supplied to the growth furnace 11 via valves 8, 9 and 10. Furthermore, a compound semiconductor crystal can be grown on the semiconductor substrate by separately exciting a chemical reaction using heat, plasma, or light energy. Also, when using the chloride VPE method, a compound semiconductor can be grown on the substrate as in the conventional example.

According to the above-described apparatus of the present invention, the growth furnace 1
In order to simultaneously control the temperature of the containers 20a and 20b of the bubbler 20 that supply the raw material gas introduced into the bubbler 20 by a single temperature controller 16, the containers 20a and 20b of the bubbler
Even if the temperature of the bubbler 0b fluctuates with respect to the set temperature, the pressure increase/decrease direction and temporal change in the fluctuation of the saturated vapor pressure of each raw material in the containers 20a and 20b due to this temperature fluctuation are the same. Fluctuations in the flow rate ratio of each raw material gas supplied from the containers 20a and 20b are suppressed to a minimum.

4 is a partially cutaway perspective view of a bubbler 21, which is a second embodiment of the bubbler 20 in FIG. 2, and FIG. 5 is a cross-sectional view taken along line AA' in FIG. 4. This bubbler 2
1 has both the functions of bubbler 20 and bubbler 15,
Three containers 21a.

21b and 21c. The bubbler 21 has a cylindrical shape with an outer diameter of 10 cm and a length of about 15 cIl+, and is made of stainless steel.As shown in FIG.
It is equipped with three containers 21a, 21b and 21c. Inside each container 21a, 21b, and 21c is a raw material 30 for vapor phase growth.
are accommodated, and each carrier gas supply pipe 2a, 3a and 4a
is connected to the bubbler 21 so as to be inserted into the vapor phase growth raw material 30 in each container 21a, 21b, and 21c. Further, the raw material gas supply pipes 2b, 3b, and 4b are connected to the upper surface of the bubbler 21 so as to be able to ventilate the inside of each container 21a, 21b, and 21c of the bubbler 21, respectively. Furthermore, the temperature of the bubbler 21 is controlled by a temperature regulator 16. By configuring as described above, the bubbler 21 has the same effects as the bubbler 20.

6 is a partially cutaway perspective view of a bubbler 22 which is a third embodiment of the bubbler 20 in FIG. 2, and FIG. 7 is a cross-sectional view taken along line AA' in FIG. 6. The bubbler 22 shown in FIG. 6 is different from the bubbler 21 shown in FIG. 4 in that the three containers 22a, 22b, and 22c can be separated from each other, and the other structures are the same as the bubbler 21. As shown in FIG. 7, the bubbler 22 has three containers 22a separated from each other and divided into 120-degree areas in a cylindrical cross section.

22b and 22c, where the bubbler 2 of FIG.
A single cylindrical bubbler 22 having the same shape as the bubbler 1 is constituted.

By configuring as described above, the bubbler 22 has the same effect as the bubblers 20 and 21, and the containers 22a, 22b, and 22c can be separated, so that the bubbler 22 can be accommodated in each container 22a, 22b, and 22c. Multiple raw materials can be replaced separately, allowing for flexible operation.

[Effects of the Invention] As detailed above, according to the present invention, the bubblers that vaporize the raw material by flowing carrier gas into the liquid or solid raw material contained therein are isolated from each other, and the bubbler vaporizes the raw material. Since the bubbler includes a plurality of containers for accommodating the bubbler, the temperature of the plurality of containers of the bubbler is controlled by the temperature control means, so that even if the temperature of each of the plurality of containers of the bubbler varies with respect to the set temperature, , the pressure increase/decrease direction and temporal change in the fluctuation of the saturated vapor pressure of each raw material in each container of the bubbler due to this temperature fluctuation are the same,
Fluctuations in the flow rate ratio of each source gas supplied from each container of the bubbler are suppressed to a minimum. As a result, e.g.
There is an advantage that the control and reproducibility of mixed crystal semiconductor growth by the VPE method or the chloride VPE method can be improved compared to conventional examples.

[Brief explanation of the drawing]

FIG. 1 is a block diagram of a semiconductor manufacturing apparatus using a vapor phase growth method which is an embodiment of the present invention, FIG. 2 is a partially cutaway perspective view of a first embodiment of the bubbler shown in FIG. 1, and FIG. 2. FIG. 4 is a partially cutaway perspective view of the second embodiment of the bubbler in FIG. 1. FIG. 5 is a cross-sectional view of the bubbler in FIG. - A cross-sectional view taken along line A'; FIG. 6 is a partially cutaway perspective view of the third embodiment of the bubbler shown in FIG. 1; FIG. 7 is a cross-sectional view taken along line A-A' of the bubbler shown in FIG. 6. 8 is a block diagram of a conventional semiconductor manufacturing apparatus using a vapor phase growth method, and FIG. 9 is a partially cutaway perspective view of the bubbler shown in FIG. 8. 1.2b, 3b, 4b... Raw material gas supply pipe, 2a,
3a, 4a...Carrier gas supply pipe, 5...Growth furnace introduction pipe, 6...Exhaust pipe, 7.8, 9.10.
...Three-way valve, 11...Growth reactor, 12...Exhaust device, +
5.20, 21.22...bubbler, 20a, 20
b, 21a, 21b, 21c, 22a. 22b, 22c... Bubbler container, 30... Raw material for vapor phase growth.

Claims (2)

[Claims] (1) A bubbler that vaporizes the raw material by flowing a carrier gas into the liquid or solid raw material contained therein; and a bubbler that is connected to the bubbler and grows semiconductor crystals in a vapor phase using the raw material gas. In a semiconductor manufacturing apparatus using a vapor phase growth method, the bubbler is isolated from each other and includes a plurality of containers for accommodating the raw material, and a temperature control means for commonly controlling the temperature of the plurality of containers of the bubbler is provided. A semiconductor manufacturing device using a vapor phase growth method, characterized by the following: (2) A semiconductor manufacturing apparatus using a vapor phase growth method according to claim 1, wherein the plurality of containers of the bubbler are configured to be separable.