JPH01196884A - Semiconductor light-emitting device - Google Patents

Semiconductor light-emitting device

Info

Publication number
JPH01196884A
JPH01196884A JP2227188A JP2227188A JPH01196884A JP H01196884 A JPH01196884 A JP H01196884A JP 2227188 A JP2227188 A JP 2227188A JP 2227188 A JP2227188 A JP 2227188A JP H01196884 A JPH01196884 A JP H01196884A
Authority
JP
Japan
Prior art keywords
active layer
layer
laser
polarization
plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2227188A
Other languages
Japanese (ja)
Other versions
JP2570357B2 (en
Inventor
Katsuhiro Kihara
木原　且裕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2227188A priority Critical patent/JP2570357B2/en
Publication of JPH01196884A publication Critical patent/JPH01196884A/en
Application granted granted Critical
Publication of JP2570357B2 publication Critical patent/JP2570357B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18338—Non-circular shape of the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a surface emission laser, the plane of polarization of which is kept stable, by forming an active layer into an elliptical shape in the surface emission type semiconductor laser. CONSTITUTION:An InGaAsP active layer 2, a P-InP buried layer 3, an N-InP current block layer 4 and a P-lnP clad layer 5 are shaped onto an N-InP substrate 1. The active layer 2 is patterned to an elliptical shape. Electrodes 6, 7 are formed to the substrate 1 and the clad layer 5. The substrate 1 on the active layer 2 is dug approximately near a light-emitting region. Consequently, the plane of polarization of laser beams emitted from the elliptical light-emitting region is kept stable. Accordingly, a surface emission laser, the plane of polarization of which is held stable, is acquired.

Description

【発明の詳細な説明】 〔（概要〕 半導体発光装置に係り、特に面発光型の半導体レーザに
関し。DETAILED DESCRIPTION OF THE INVENTION [(Summary)] This invention relates to a semiconductor light emitting device, and particularly to a surface emitting type semiconductor laser.

レーザ光の偏波面を安定ならしめることを目的とし。The purpose is to stabilize the plane of polarization of laser light.

（１）面発光型の半導体レーザであって、楕円形の活性
層を有することを特徴とする半導体発光装置、または （２）面発光型の半導体レーザであって２円形の活性層
と該活性層の両側に形成された溝とを有することを特徴
とする半導体発光装置、をもって構成とする。(1) A semiconductor light emitting device that is a surface emitting type semiconductor laser and has an elliptical active layer, or (2) A surface emitting type semiconductor laser that has two circular active layers and the active layer. A semiconductor light emitting device characterized by having grooves formed on both sides of a layer.

〔産業上の利用分野〕[Industrial application field]

本発明は半導体発光装置に係り、特に面発光型の半導体
レーザに関する。The present invention relates to a semiconductor light emitting device, and more particularly to a surface emitting type semiconductor laser.

コヒーレント光通信方式では、レーザ光の偏波面の安定
なレーザが要求されている。このため。Coherent optical communication systems require a laser whose polarization plane is stable. For this reason.

かかるレーザを開発する必要がある。There is a need to develop such a laser.

〔従来の技術〕[Conventional technology]

コヒーレント光通信方式では高速変調時にお°いて単一
波長発振するレーザが望まれており、かかるレーザの一
つとして短共振器レーザがある。短共振器レーザの一つ
の構造として面発光型の半導体レーザがあり、第３図に
その構造を示す。In coherent optical communication systems, a laser that emits a single wavelength during high-speed modulation is desired, and one such laser is a short cavity laser. One type of short-cavity laser structure is a surface-emitting type semiconductor laser, and FIG. 3 shows the structure thereof.

基板ｌの上に活性層２．埋込層３．電流■止層４．クラ
ッド層５が形成されている。従来構造では活性層が円形
である。An active layer 2. Buried layer 3. Current stop layer 4. A cladding layer 5 is formed. In the conventional structure, the active layer is circular.

かかる構造では屈折率分布が円対称で、レーザ光の偏波
面を安定に保つことができなかった。そのため送信側の
レーザ光の偏波面が安定せず、受信側では信号の検波が
不可能であった。In such a structure, the refractive index distribution is circularly symmetrical, and the plane of polarization of the laser beam cannot be kept stable. As a result, the polarization plane of the laser beam on the transmitting side was not stable, making it impossible to detect the signal on the receiving side.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従って、レーザ光の偏波面を安定化させ、受信側での検
波を可能ならしめるという課題があり。Therefore, there is a problem of stabilizing the plane of polarization of laser light and making detection possible on the receiving side.

本発明はかかる課題に応えるものである。The present invention responds to such problems.

〔課題を解決するための手段〕[Means to solve the problem]

（１）面発光型の半導体レーザであって、楕円形の活性
層を有することを特徴とする半導体発光装置、または （２）面発光型の半導体レーザであって２円形の活性層
と該活性層の両側に形成された溝とを有することを特徴
とする半４体発光装置 により、上記課題に応えることができる。(1) A semiconductor light emitting device that is a surface emitting type semiconductor laser and has an elliptical active layer, or (2) A surface emitting type semiconductor laser that has two circular active layers and the active layer. The above problem can be met by a semi-quadramid light emitting device characterized by having grooves formed on both sides of the layer.

〔作用〕[Effect]

面発光型の半導体レーザの活性層は埋込構造となってお
り、活性層に垂直にレーザ光が出て来るのであるが、活
性層を楕円形にすると活性層を含む面上において楕円の
長軸方向と短軸方向で屈折率分布が異なることから、−
度安定した偏波が生じるとその偏波面は安定に保たれる
。The active layer of a surface-emitting type semiconductor laser has a buried structure, and the laser light comes out perpendicular to the active layer. However, when the active layer is shaped into an ellipse, the length of the ellipse is created on the surface containing the active layer. Since the refractive index distribution is different in the axial direction and short axis direction, −
Once stable polarization occurs, the plane of polarization will remain stable.

活性層の近くの両側に溝を形成しても同様の効果が得ら
れる。即ち光は活性層だけにとどまらず。A similar effect can be obtained by forming grooves on both sides near the active layer. In other words, the light is not limited to the active layer.

その周囲にいくらか染み出るので、その領域に溝を形成
すると活性層を含む面上において溝を結ぶ方向とそれに
垂直な方向で屈折率分布が異なり。Some of the refractive index seeps into the surrounding area, so if grooves are formed in that area, the refractive index distribution will be different in the direction connecting the grooves and in the direction perpendicular to it on the surface containing the active layer.

−度安定した偏波が生じるとその偏波面は安定に保たれ
る。- When stable polarization occurs, the plane of polarization remains stable.

〔実施例〕〔Example〕

以下本発明の実施例について説明する。 Examples of the present invention will be described below.

°第１図に実施例（１）を示す。ｎ−１ｎＰ基板ｌ上に
ＩｎＧａＡｓＰの活性層２．ｐ−１ｎＰの埋込Ｎ３゜ｎ
−１ｎＰの電流阻止層４．ｐ−ＩｎＰのクラッド層５を
形成する。活性層２は楕円形にバターニングする。基板
とクラッド層に電極６，７を取りつける。発光領域（活
性層）上の基板をほとんど発光領域近くまで掘削する。Example (1) is shown in FIG. Active layer 2 of InGaAsP on n-1nP substrate l. Embedding N3゜n of p-1nP
-1nP current blocking layer4. A cladding layer 5 of p-InP is formed. The active layer 2 is patterned into an oval shape. Electrodes 6 and 7 are attached to the substrate and cladding layer. The substrate above the light emitting region (active layer) is excavated almost to the vicinity of the light emitting region.

楕円形の発光領域から出て来るレーザ光は偏波面が安定
に保たれる。The plane of polarization of the laser light emitted from the elliptical light emitting area is kept stable.

第２図に実施例（２）を示す。ｎ−４ｎＰ基板工上にＩ
ｎＧａＡｓＰの活性層２．　　ｐ−ＩｎＰの埋込層３゜
ｎ−１ｎＰの電流阻止層４．Ｉ）ＩｎＰのクラッド層５
を形成する。活性層２は円形にパターニングする。基板
とクラッド層に電極６，７を取りつける。Example (2) is shown in FIG. I on the n-4nP board
nGaAsP active layer 2. p-InP buried layer 3.n-1nP current blocking layer 4. I) InP cladding layer 5
form. The active layer 2 is patterned circularly. Electrodes 6 and 7 are attached to the substrate and cladding layer.

発光領ｂｉ（活性層）上の基板をほとんど発光領域近く
まで掘削する。The substrate above the light emitting region bi (active layer) is excavated almost to the vicinity of the light emitting region.

クラッド層側から活性層の両側に溝を掘り、二つの溝が
活性層を挟む深さまで掘り下げる。Grooves are dug from the cladding layer side to both sides of the active layer until the depth is such that the two grooves sandwich the active layer.

レーザ光は活性層から周囲に染み出して溝の影テを受け
、屈折率分布が円対称からずれて、偏波面が安定に保た
れる。The laser light leaks out from the active layer to the surrounding area and is affected by the groove, causing the refractive index distribution to deviate from circular symmetry and keeping the plane of polarization stable.

〔発明の効果〕〔Effect of the invention〕

以上説明した様に２本発明によれば、偏波面を安定に保
つ面発光レーザが実現でき、コヒーレント光通信方式の
発展に寄与する。As explained above, according to the two aspects of the present invention, a surface emitting laser that maintains a stable polarization plane can be realized, contributing to the development of coherent optical communication systems.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は実施例（１）。 第２図は実施例（２）。 第３図は従来の面発光レーザ である。　図において。 １は基板。 ２は活性層。 ３は埋込層。 ４は電流阻止層。 ５はクラッド層。 ６．７は電極。 ８はン１１１： 断面図 （久） ＊　　　、り１４　　１（クリ　　　　（１）ぼり 犬　ラｌ竺　ブダリ　　　（Ｚ） FIG. 1 shows Example (1). FIG. 2 shows Example (2). Figure 3 shows a conventional surface emitting laser It is. In the figure. 1 is the board. 2 is the active layer. 3 is the embedded layer. 4 is a current blocking layer. 5 is the cladding layer. 6.7 is an electrode. 8han111: Cross section (long) *, ri 14 1 (kuri) 　　(1) ri Dog Laljiku Budari (Z)

Claims (2)

【特許請求の範囲】[Claims] （１）面発光型の半導体レーザであって、楕円形の活性
層（２）を有することを特徴とする半導体発光装置。(1) A semiconductor light emitting device that is a surface emitting type semiconductor laser and has an elliptical active layer (2). （２）面発光型の半導体レーザであって、円形の活性層
（２）と該活性層の両側に形成された溝（８）とを有す
ることを特徴とする半導体発光装置。(2) A semiconductor light emitting device which is a surface emitting type semiconductor laser and has a circular active layer (2) and grooves (8) formed on both sides of the active layer.
JP2227188A 1988-02-02 1988-02-02 Semiconductor light emitting device Expired - Lifetime JP2570357B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2227188A JP2570357B2 (en) 1988-02-02 1988-02-02 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2227188A JP2570357B2 (en) 1988-02-02 1988-02-02 Semiconductor light emitting device

Publications (2)

Publication Number Publication Date
JPH01196884A true JPH01196884A (en) 1989-08-08
JP2570357B2 JP2570357B2 (en) 1997-01-08

Family

ID=12078100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2227188A Expired - Lifetime JP2570357B2 (en) 1988-02-02 1988-02-02 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JP2570357B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0595469A1 (en) * 1992-09-25 1994-05-04 Nec Corporation Vertical-to-surface optical semiconductor device and apparatus for coupling optical signals
EP0618652A2 (en) * 1993-03-29 1994-10-05 AT&T Corp. Semiconductor surface emitting laser having enhanced polarization control and transverse mode selectivity
US5778018A (en) * 1994-10-13 1998-07-07 Nec Corporation VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices
US6967985B2 (en) 2002-02-12 2005-11-22 Sanyo Electric Co., Ltd. Surface emission semiconductor laser device
JP2006120881A (en) * 2004-10-22 2006-05-11 Sony Corp Surface-emission semiconductor laser element
JP2014017448A (en) * 2012-07-11 2014-01-30 Ricoh Co Ltd Surface emitting laser, surface emitting laser array, optical scanner device and image forming device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0595469A1 (en) * 1992-09-25 1994-05-04 Nec Corporation Vertical-to-surface optical semiconductor device and apparatus for coupling optical signals
US5365540A (en) * 1992-09-25 1994-11-15 Nec Corporation Vertical-to-surface optical semiconductor device and apparatus for coupling optical signals
EP0618652A2 (en) * 1993-03-29 1994-10-05 AT&T Corp. Semiconductor surface emitting laser having enhanced polarization control and transverse mode selectivity
EP0618652A3 (en) * 1993-03-29 1995-05-10 At & T Corp Semiconductor surface emitting laser having enhanced polarization control and transverse mode selectivity.
US5778018A (en) * 1994-10-13 1998-07-07 Nec Corporation VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices
US6154479A (en) * 1994-10-13 2000-11-28 Nec Corporation VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices
US6967985B2 (en) 2002-02-12 2005-11-22 Sanyo Electric Co., Ltd. Surface emission semiconductor laser device
JP2006120881A (en) * 2004-10-22 2006-05-11 Sony Corp Surface-emission semiconductor laser element
JP4687064B2 (en) * 2004-10-22 2011-05-25 ソニー株式会社 Surface emitting semiconductor laser device
JP2014017448A (en) * 2012-07-11 2014-01-30 Ricoh Co Ltd Surface emitting laser, surface emitting laser array, optical scanner device and image forming device

Also Published As

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