JPH01196863A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH01196863A
JPH01196863A JP2219588A JP2219588A JPH01196863A JP H01196863 A JPH01196863 A JP H01196863A JP 2219588 A JP2219588 A JP 2219588A JP 2219588 A JP2219588 A JP 2219588A JP H01196863 A JPH01196863 A JP H01196863A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
films
etc
polycrystalline
silicon
onto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2219588A
Inventor
Seiichi Iwamatsu
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To increase working speed by lowering the resistance of a wiring by an silicide film by a polycrystalline semiconductor film or an amorphous semiconductor film.
CONSTITUTION: When insulating films 2, 5 composed of silicon oxide, etc., are formed onto a semiconductor substrate 1 and a vertical diode by laminating polycrystalline semiconductor films 4, 6 consisting of polycrystalline silicon, amorphous silicon, etc., and amorphous semiconductor films is shaped onto said insulating films 2, 5, silicide films 3, 7 made up of tungstosilicon, molybdosilicon, etc., or conductive films composed of high melting-point metallic films or alloy films consisting of tungsten, molybdenum, etc., are formed onto the insulating films 2, 5, polycrystalline silicon 4 and 6 are arranged onto the conductive films in a latticed manner, and the vertical type diode is shaped at the intersection of the polycrystalline silicon.
COPYRIGHT: (C)1989,JPO&Japio
JP2219588A 1988-02-02 1988-02-02 Semiconductor device Granted JPH01196863A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2219588A JPH01196863A (en) 1988-02-02 1988-02-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2219588A JPH01196863A (en) 1988-02-02 1988-02-02 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH01196863A true true JPH01196863A (en) 1989-08-08

Family

ID=12076017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2219588A Granted JPH01196863A (en) 1988-02-02 1988-02-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH01196863A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0550171A2 (en) * 1991-12-30 1993-07-07 AT&T Corp. Integrated circuit with silicon contact to silicide
WO1997032340A1 (en) * 1996-03-01 1997-09-04 Micron Technology, Inc. Novel vertical diode structures with low series resistance
US7166875B2 (en) 1996-03-01 2007-01-23 Micron Technology, Inc. Vertical diode structures
CN104021975A (en) * 2013-02-28 2014-09-03 西门子公司 Embedded pole and deflector

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0550171A2 (en) * 1991-12-30 1993-07-07 AT&T Corp. Integrated circuit with silicon contact to silicide
US5591674A (en) * 1991-12-30 1997-01-07 Lucent Technologies Inc. Integrated circuit with silicon contact to silicide
WO1997032340A1 (en) * 1996-03-01 1997-09-04 Micron Technology, Inc. Novel vertical diode structures with low series resistance
US7166875B2 (en) 1996-03-01 2007-01-23 Micron Technology, Inc. Vertical diode structures
US7170103B2 (en) 1996-03-01 2007-01-30 Micron Technology, Inc. Wafer with vertical diode structures
US7279725B2 (en) 1996-03-01 2007-10-09 Micron Technology, Inc. Vertical diode structures
US7563666B2 (en) 1996-03-01 2009-07-21 Micron Technology, Inc. Semiconductor structures including vertical diode structures and methods of making the same
US8034716B2 (en) 1996-03-01 2011-10-11 Micron Technology, Inc. Semiconductor structures including vertical diode structures and methods for making the same
CN104021975A (en) * 2013-02-28 2014-09-03 西门子公司 Embedded pole and deflector

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