JPH0119261B2 - - Google Patents

Info

Publication number
JPH0119261B2
JPH0119261B2 JP57040757A JP4075782A JPH0119261B2 JP H0119261 B2 JPH0119261 B2 JP H0119261B2 JP 57040757 A JP57040757 A JP 57040757A JP 4075782 A JP4075782 A JP 4075782A JP H0119261 B2 JPH0119261 B2 JP H0119261B2
Authority
JP
Japan
Prior art keywords
frequency power
bias voltage
self
power source
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57040757A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58158929A (ja
Inventor
Kyoshi Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Kokusai Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Co Ltd filed Critical Kokusai Electric Co Ltd
Priority to JP57040757A priority Critical patent/JPS58158929A/ja
Publication of JPS58158929A publication Critical patent/JPS58158929A/ja
Publication of JPH0119261B2 publication Critical patent/JPH0119261B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP57040757A 1982-03-17 1982-03-17 プラズマ発生装置 Granted JPS58158929A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57040757A JPS58158929A (ja) 1982-03-17 1982-03-17 プラズマ発生装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57040757A JPS58158929A (ja) 1982-03-17 1982-03-17 プラズマ発生装置

Publications (2)

Publication Number Publication Date
JPS58158929A JPS58158929A (ja) 1983-09-21
JPH0119261B2 true JPH0119261B2 (enrdf_load_html_response) 1989-04-11

Family

ID=12589490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57040757A Granted JPS58158929A (ja) 1982-03-17 1982-03-17 プラズマ発生装置

Country Status (1)

Country Link
JP (1) JPS58158929A (enrdf_load_html_response)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4496448A (en) * 1983-10-13 1985-01-29 At&T Bell Laboratories Method for fabricating devices with DC bias-controlled reactive ion etching
JPS60116125A (ja) * 1983-11-29 1985-06-22 Zenko Hirose 成膜方法
JPS60187025A (ja) * 1984-03-07 1985-09-24 Ulvac Corp プラズマ放電装置に於けるセルフバイアス電圧制御装置
JPS6147642A (ja) * 1984-08-14 1986-03-08 Teru Saamuko Kk プラズマ発生装置
JPH0642452B2 (ja) * 1984-09-06 1994-06-01 松下電器産業株式会社 プラズマ化学気相堆積方法
JPS61119029A (ja) * 1984-11-14 1986-06-06 Nippon Soken Inc 水素化アモルフアス半導体薄膜の製造方法
JPS61166028A (ja) * 1985-01-17 1986-07-26 Anelva Corp ドライエツチング装置
US4602981A (en) * 1985-05-06 1986-07-29 International Business Machines Corporation Monitoring technique for plasma etching
JP2570805B2 (ja) * 1988-04-26 1997-01-16 株式会社島津製作所 プラズマ付着装置
US5288971A (en) * 1991-08-09 1994-02-22 Advanced Energy Industries, Inc. System for igniting a plasma for thin film processing
JP2530560B2 (ja) * 1993-05-17 1996-09-04 株式会社アドテック 高周波プラズマ用インピ―ダンス整合装置
JP2002533868A (ja) 1997-10-14 2002-10-08 アドバンスト・エナジー・インダストリーズ・インコーポレイテッド 早い電圧増加によるプラズマ点火を目的としたシステム
US6677711B2 (en) * 2001-06-07 2004-01-13 Lam Research Corporation Plasma processor method and apparatus
JP4370789B2 (ja) 2002-07-12 2009-11-25 東京エレクトロン株式会社 プラズマ処理装置及び可変インピーダンス手段の校正方法
US20040118344A1 (en) 2002-12-20 2004-06-24 Lam Research Corporation System and method for controlling plasma with an adjustable coupling to ground circuit
US8450635B2 (en) * 2007-03-30 2013-05-28 Lam Research Corporation Method and apparatus for inducing DC voltage on wafer-facing electrode
JP5147510B2 (ja) 2007-04-27 2013-02-20 キヤノン株式会社 電子写真用ローラ部材の製造方法
CN113179574B (zh) * 2021-04-23 2022-06-07 山东大学 用于标定区域等离子体分布的多通道朗缪尔探针诊断系统

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS597212B2 (ja) * 1977-09-05 1984-02-17 富士通株式会社 プラズマ・エッチング方法
JPS55118637A (en) * 1979-03-06 1980-09-11 Chiyou Lsi Gijutsu Kenkyu Kumiai Plasma etching apparatus

Also Published As

Publication number Publication date
JPS58158929A (ja) 1983-09-21

Similar Documents

Publication Publication Date Title
JPH0119261B2 (enrdf_load_html_response)
US4333814A (en) Methods and apparatus for improving an RF excited reactive gas plasma
US4844775A (en) Ion etching and chemical vapour deposition
JP2830978B2 (ja) リアクティブイオンエッチング装置及びプラズマプロセス装置
US5698062A (en) Plasma treatment apparatus and method
DE69527661T2 (de) Vorrichtung und Verfahren zur Substratbehandlung mittels Plasma
KR101322552B1 (ko) 다중 주파수 플라즈마 에칭 반응기
CN101866808B (zh) 具有响应多个rf频率的电极的等离子体处理器
JPS627272B2 (enrdf_load_html_response)
JP2004047696A (ja) プラズマドーピング方法及び装置、整合回路
US5413954A (en) Method of making a silicon-based device comprising surface plasma cleaning
JPS61136229A (ja) ドライエツチング装置
JP3122228B2 (ja) プロセス装置
JP2651597B2 (ja) ドライエッチング方法及び装置
JPH05267226A (ja) ドライエッチング装置およびドライエッチング方法
JPS597212B2 (ja) プラズマ・エッチング方法
WO2019146267A1 (ja) 反応性イオンエッチング装置
JPH0888218A (ja) プラズマエッチング方法及びその装置
JPH0328370A (ja) マイクロ波プラズマ処理装置
JPH0527967B2 (enrdf_load_html_response)
JPS6314422A (ja) プラズマｃｖｄ方法
JPH05291155A (ja) プラズマ処理装置
JPH03224226A (ja) プラズマ加工方法およびそれに用いる装置
JPH0590180A (ja) プラズマｃｖｄ処理装置のドライクリーニング方法
JP4373685B2 (ja) プラズマ処理方法