JPH01186731A - Manufacture of secondary electron multiplier - Google Patents
Manufacture of secondary electron multiplierInfo
- Publication number
- JPH01186731A JPH01186731A JP872388A JP872388A JPH01186731A JP H01186731 A JPH01186731 A JP H01186731A JP 872388 A JP872388 A JP 872388A JP 872388 A JP872388 A JP 872388A JP H01186731 A JPH01186731 A JP H01186731A
- Authority
- JP
- Japan
- Prior art keywords
- secondary electron
- resistance value
- electron emission
- electron multiplier
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000007639 printing Methods 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 150000007530 organic bases Chemical class 0.000 claims abstract description 5
- 238000009826 distribution Methods 0.000 claims abstract description 4
- 238000005245 sintering Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 28
- 238000010304 firing Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 3
- 229910002113 barium titanate Inorganic materials 0.000 claims description 3
- 239000011230 binding agent Substances 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims 2
- 239000000941 radioactive substance Substances 0.000 claims 2
- 230000007423 decrease Effects 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 9
- 229910000464 lead oxide Inorganic materials 0.000 description 6
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000012857 radioactive material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
- H01J43/24—Dynodes having potential gradient along their surfaces
- H01J43/246—Microchannel plates [MCP]
Landscapes
- Electron Tubes For Measurement (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は二次電子増倍器を用いて映像またはその他の平
面的信号分布を増幅するための連続ダイノード形二次電
子増倍器の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a continuous dynode secondary electron multiplier for amplifying video or other planar signal distributions using a secondary electron multiplier. .
従来の技術
円筒型の二次電子増倍器は円筒の内表面に均一な厚さの
二次電子放出面を形成し、この円筒の両端に電子加速用
電極を設け、これら両電極間に電位差を与える。このと
き低電圧側の円筒の入力端より入射した電子が円筒の内
壁に衝突を繰返してその数を増倍し、その結果二次電子
放出面から出る電子数が入射電子数よりも蟲かに大きく
なる。Conventional technology A cylindrical secondary electron multiplier has a secondary electron emitting surface of uniform thickness formed on the inner surface of the cylinder, electrodes for accelerating electrons are provided at both ends of the cylinder, and a potential difference is created between these two electrodes. give. At this time, the electrons incident from the input end of the cylinder on the low voltage side repeatedly collide with the inner wall of the cylinder and multiply their number, and as a result, the number of electrons emitted from the secondary electron emission surface is much larger than the number of incident electrons. growing.
従来の二次電子増倍器の製法として知られているものに
ついて第２図を参照しながら述べる。第２図において２
２は酸化鉛を含むガラスの円筒である。この円筒の内表
面に露出している酸化鉛は一部還元されてその抵抗値は
ガラス円筒２２の入力端電極２４と出力端電極２５との
間で数１００ＭΩ程度になっている。このガラス円筒２
２の両端に出力端電極２５が正となるように高電圧を印
加すると内部には長さ方向に電界が発生する。このガラ
ス円筒２２の入力端電極２４の側から電子２６が入射す
ると長さ方向の電界に加速されて出力端電極２５の方向
へ移動するが、直ぐ円筒内表面に衝突して二次電子を放
出する。ガラス円筒内面の二次電子放出比が１以上であ
れば、入射した電子２６の数に比例して次第に増幅され
多数の二次電子を出力端より得ることができる。このよ
うな二次電子増倍器の内表面には二次電子放出比が大き
く、かつ高抵抗の物質が塗布されていることが必要であ
る。従来は酸化鉛の含まれたガラス円筒を水素雰囲気中
で一部還元することにより、この内表面に鉛の金属−酸
化物層を形成して達成していた。この二次電子放出層の
抵抗値は入力端側から出力端側まで均一に形成されてい
る。A known method for manufacturing a conventional secondary electron multiplier will be described with reference to FIG. In Figure 2, 2
2 is a glass cylinder containing lead oxide. Part of the lead oxide exposed on the inner surface of the cylinder is reduced, and its resistance value between the input end electrode 24 and the output end electrode 25 of the glass cylinder 22 is about several 100 MΩ. This glass cylinder 2
When a high voltage is applied to both ends of the wire so that the output end electrode 25 becomes positive, an electric field is generated inside the wire in the length direction. When electrons 26 enter the glass cylinder 22 from the input end electrode 24 side, they are accelerated by the longitudinal electric field and move toward the output end electrode 25, but they immediately collide with the inner surface of the cylinder and emit secondary electrons. do. If the secondary electron emission ratio of the inner surface of the glass cylinder is 1 or more, a large number of secondary electrons can be obtained from the output end by being gradually amplified in proportion to the number of incident electrons 26. It is necessary that the inner surface of such a secondary electron multiplier be coated with a material having a high secondary electron emission ratio and high resistance. Conventionally, this has been achieved by partially reducing a glass cylinder containing lead oxide in a hydrogen atmosphere to form a lead metal-oxide layer on its inner surface. The resistance value of this secondary electron emission layer is formed uniformly from the input end side to the output end side.
一方この円筒の入力端側と出力端側で抵抗値が異なると
種々の優れた性質が得られることも知られている。On the other hand, it is also known that various excellent properties can be obtained if the resistance values are different between the input end and the output end of the cylinder.
特公昭５７−２４６３０号公報に記載されている発明は
前記円筒の電子入射側と出射する側で抵抗を異ならせる
と大きな利得が得られることを指摘している。The invention described in Japanese Patent Publication No. 57-24630 points out that a large gain can be obtained by making the resistance different between the electron incident side and the electron exit side of the cylinder.
また特開昭５９−９６６４２号公報に記載されている発
明は酸化鉛を含むガラスの円筒の約半分をマスクして内
表面に露出した酸化鉛を一部還元し、次にこのマスクを
除去して内表面全体を同様に還元処理することによりこ
の円筒の内表面の右半分および左半分の二次電子放出層
の抵抗値を異ならせる方法を述べている。Furthermore, the invention described in JP-A No. 59-96642 involves masking approximately half of a glass cylinder containing lead oxide to partially reduce the lead oxide exposed on the inner surface, and then removing this mask. A method is described in which the resistance values of the secondary electron emitting layers on the right and left halves of the inner surface of this cylinder are made different by subjecting the entire inner surface to a similar reduction treatment.
発明が解決しようとする課題
前記特公昭５７−２４６３０号公軸に示されている発明
では異なる抵抗率を存するチタン酸バリウム系半導体磁
器の筒を導電性接着剤で接合することにより、前記円筒
の電子入射側と出射する側で抵抗値を異ならせている。Problems to be Solved by the Invention In the invention disclosed in the above-mentioned Japanese Patent Publication No. 57-24630, barium titanate-based semiconductor porcelain cylinders having different resistivities are bonded together with a conductive adhesive. The resistance value is different between the electron incident side and the electron exit side.
この方法は前記公報に示されているように内径１．２ｍ
ｍ程度の比較的径の大きい円筒に通している。しかしな
がら本願発明者が目的とする円筒の内径が数百ミクロン
以下の二次電子増倍器の製造に適用することは困難であ
る。また円筒が一つの面に多数並行に配列されたいわゆ
るマルチチャンネルプレートにおいては、異なる抵抗率
を持つマルチチャンネルプレート同志の円筒を一対一に
対応させて接続することが困難であるので前記方法は採
用されない。This method has an inner diameter of 1.2 m as shown in the above publication.
It is passed through a cylinder with a relatively large diameter of about m. However, it is difficult to apply this method to the production of a secondary electron multiplier whose cylinder has an inner diameter of several hundred microns or less, which is the aim of the inventor of the present application. In addition, in so-called multi-channel plates in which a large number of cylinders are arranged in parallel on one surface, it is difficult to connect the cylinders of multi-channel plates with different resistivities in a one-to-one correspondence, so the above method is adopted. Not done.
特開昭５９−９６６４２号公報に示されている発明は、
酸化鉛を含むガラスからなる円筒の約半分だけを２回還
元処理し、他の半分を１回だけ還元処理することにより
この円筒の右半分と左半分の二次電子放出層の抵抗値を
異ならせている。しかしながらこの方法では円筒の内表
面の二次電子放出層の抵抗値を連続的に変化させること
ができないので高い二次電子増倍器果は得られない。The invention disclosed in Japanese Patent Application Laid-Open No. 59-96642 is
By reducing approximately half of the cylinder made of glass containing lead oxide twice and reducing the other half only once, the resistance values of the secondary electron emitting layers on the right and left halves of this cylinder can be made to differ. It's set. However, with this method, it is not possible to continuously change the resistance value of the secondary electron emitting layer on the inner surface of the cylinder, so a high secondary electron multiplication effect cannot be obtained.
本発明は上記問題点に鑑み、貫通孔の内径が数百ミクロ
ンのように極めて細い貫通孔を多数並行配列した二次電
子増倍器において、前記貫通孔の二次電子放出層の抵抗
値を電子の入射側と出射する側で連続的に異ならせた二
次電子増倍器を製造する方法を提供するものである。In view of the above-mentioned problems, the present invention provides a secondary electron multiplier in which a large number of extremely thin through holes with an inner diameter of several hundred microns are arranged in parallel, and the resistance value of the secondary electron emitting layer of the through holes is The present invention provides a method for manufacturing a secondary electron multiplier in which the electron incident side and electron output side are continuously different.
課題を解決するための手段
上記課題を解決するために本発明による二次電子増倍器
の製造方法は、有機系ベースフィルム上に二次電子放射
性物質からなるペーストを、整列配置された多数の貫通
孔が得られる所望形状のマスクパターンを通して印刷し
シート状フィルムにする工程において、この印刷した二
次電子放射性物質層の抵抗値が第１枚目のシート状フィ
ルムよりは第２枚目のシート状フィルムの方が高くなる
ように順次高い抵抗値の二次電子放射性物質からなるペ
ーストで印刷してシート状にする工程と、このシート状
フィルムから有機系ベースフィルムを剥離しパターン形
成された二次電子放射性物質層のみからなるシートを抵
抗値が連続的に増加または減少する方向に、順番通りに
複数枚、貫通孔の位置がずれないように積層し圧着する
工程と、脱バインダのための熱処理工程と積層された二
次電子放射性物質層の焼結のための高温焼成工程により
マスクパターン通り形成された貫通孔の内壁が連続的な
抵抗値分布をもった二次電子放射性物質からなる二次電
子増倍器を同時に多数個形成されることを特徴とする方
法によって解決される。Means for Solving the Problems In order to solve the above-mentioned problems, the method for manufacturing a secondary electron multiplier according to the present invention includes a method of manufacturing a secondary electron multiplier by applying a paste made of a secondary electron emissive substance to an organic base film in a large number of arrays. In the step of printing through a mask pattern with a desired shape that provides through holes to form a sheet-like film, the resistance value of the printed secondary electron emissive material layer is lower than that of the first sheet-like film. A process of printing with a paste made of a secondary electron emitting substance with a higher resistance value in order to make the film into a sheet, and peeling off the organic base film from this sheet film to form a patterned second film. A process of laminating and pressing a plurality of sheets consisting only of secondary electron radioactive material layers in a direction in which the resistance value continuously increases or decreases so that the positions of the through holes are not shifted, and a process for removing the binder. Through the heat treatment process and the high-temperature firing process for sintering the stacked secondary electron emissive material layers, the inner walls of the through holes formed according to the mask pattern are made of a secondary electron emissive material with a continuous resistance value distribution. This problem is solved by a method characterized in that a large number of secondary electron multipliers are formed simultaneously.
作用
本発明は上記した構成により貫通孔の内表面の二次電子
放出層の抵抗値を電子入射側から出射側へ連続的に増加
させることができるので極めて高効率の二次電子増倍器
が得られる。Function The present invention can continuously increase the resistance value of the secondary electron emitting layer on the inner surface of the through hole from the electron incidence side to the emission side with the above-described configuration, so that an extremely highly efficient secondary electron multiplier can be obtained. can get.
実施例
以下本発明の一実施例の二次電子増倍器の製造方法を工
程の順に図面を参照しながら説明する。EXAMPLE Hereinafter, a method for manufacturing a secondary electron multiplier according to an embodiment of the present invention will be explained in order of steps with reference to the drawings.
第１図ｔａ＋は本発明による二次電子増倍器の断面図で
あり、第１図（ｂｌはその俯轍図であり、第１図（Ｃ）
。FIG. 1 ta+ is a cross-sectional view of the secondary electron multiplier according to the present invention, FIG.
.
（ｄ＋、 （ｅｌはその製造工程における断面図である
。第１図（Ｃ１に示すように、２００μｍφの円形で前
後左右に１５０μｍ間隔で規則的に配置されたマスクパ
ターンを用い、１２０μｍ厚のポリエチレンテレフタレ
ー） （ＰＥＴ）ベースフィルム（５０Ｘ５０ｍｍ）１
）上に第１表に示したｍ１組成のチタン酸バリウム系有
機溶液からなるペーストをスクリーン印刷法で印刷して
第１番目のグリーンシート１２を作製する。同様にして
阻１組成よりは抵抗値の大きい階２組成のペーストで第
２番目のグリーンシートを作製する。このようにして磁
３組成ペーストで第３番目のグリーンシートを、そして
最後に階５組成ペーストで第５番目のグリーンシートを
作製し順次抵抗値の大きいグリーンシート群を得る。(d+, (el is a cross-sectional view of the manufacturing process. As shown in Figure 1 (C1), using a mask pattern of a circle of 200 μmφ and regularly arranged at intervals of 150 μm in the front, back, left, and right directions, a 120 μm thick polyethylene Telephthalate) (PET) base film (50x50mm) 1
) The first green sheet 12 is produced by printing a paste made of a barium titanate organic solution having the m1 composition shown in Table 1 above using a screen printing method. In the same way, a second green sheet is produced using a paste with a second composition having a higher resistance value than the second composition. In this way, a third green sheet is produced using the magnetic 3 composition paste, and finally a 5th green sheet is produced using the grade 5 composition paste, thereby obtaining a group of green sheets having successively higher resistance values.
次に第１図＋ｄｉに示すように、第１番目のグリーンシ
ート１２上に第２番目のペーストのみからなるグリーン
シート１３を重ね合わせ、さらにその上に第３番目１４
．第４番目、第５番目と順番通りにペーストのみからな
るグリーンシートを各貫通孔１５の位置ずれのないよう
に正確に重ね合わせてから５０に＋ｒ／−の圧力で圧着
する。Next, as shown in FIG.
．． The fourth and fifth green sheets made only of paste are accurately overlapped in order so that there is no misalignment of each through hole 15, and then pressed to 50 with a pressure of +r/-.
第１番目からのベースフィルム１）を除去した後、この
試料を脱バインダ炉で大気中６５０℃。After removing the base film 1) from the first one, the sample was heated in a debinding oven at 650°C in air.
１．５時間熱処理して有機系物質を除去し、さらに高温
焼成炉で大気中、１）５０℃、１．５時間焼成する。焼
成後の二次電子放出層の厚さは約１龍であった。この試
料の両面に真空蒸着法でＮｉ−Ｃｒ合金電極１７．１７
’を約０．７μｍ付着させて第１図ｔｅｌのように本発
明の二次電子増倍器を完成する。なお各グリーンシート
層の焼成後の抵抗値は第１表のごとくであった。このよ
うにして形成した二次電子増倍器は電子入射端電極１７
゛側を低抵抗側にして、電子出力端電極１７を正にして
直流電圧を２〜３ＫＶ印加時で入射電子が１０５〜１０
６倍に増幅された。Heat treatment is performed for 1.5 hours to remove organic substances, and the product is further fired in a high-temperature firing furnace in the atmosphere at 1) 50° C. for 1.5 hours. The thickness of the secondary electron emitting layer after firing was about 1 mm. Ni-Cr alloy electrodes 17.17 were deposited on both sides of this sample using a vacuum evaporation method.
' is deposited to a thickness of about 0.7 μm to complete the secondary electron multiplier of the present invention as shown in FIG. The resistance values of each green sheet layer after firing were as shown in Table 1. The secondary electron multiplier formed in this way has an electron incident end electrode 17
When the side is set to the low resistance side, the electron output terminal electrode 17 is set to positive, and a DC voltage of 2 to 3 KV is applied, the incident electrons are 105 to 10.
It was amplified 6 times.
発明の効果
以上のように本発明は貫通孔の内表面の二次電子放出層
の抵抗値を電子入射側から出射側へ連続的に増加させる
ことができるので極めて高効率の二次電子増倍効果が簡
単に得られ、かつ同時に多数の二次電子増倍器が得られ
るものである。なおこの貫通孔の形状は三角形、正方形
、矩形、六角形などマスクパターンの形状を変えること
により、自由にかつ容易に変えることができる。また二
次電子放出層の厚さを制御するには同一抵抗値のグリー
ンシートの枚数の増減または抵抗値の異なったペースト
の数を変えることによって可能である。Effects of the Invention As described above, the present invention can continuously increase the resistance value of the secondary electron emission layer on the inner surface of the through hole from the electron incidence side to the electron emission side, resulting in extremely high efficiency secondary electron multiplication. The effect can be easily obtained and a large number of secondary electron multipliers can be obtained at the same time. Note that the shape of this through hole can be freely and easily changed by changing the shape of the mask pattern, such as a triangle, square, rectangle, or hexagon. Further, the thickness of the secondary electron emitting layer can be controlled by increasing or decreasing the number of green sheets having the same resistance value or by changing the number of pastes having different resistance values.
第１図ｆａｔは本発明による二次電子増倍器の断面図、
第１図ｆｂ）はその俯撤図、第１図ｔｅ１． （ｄｌ、
（ｅｌはその製造工程における断面図、第２閏は従来
例の断面図である。
１）・・・・・・ベースフィルム、１２・・・・・・第
１番目グリーンシート層、１３・・・・・・第２番目グ
リーンシート層、１４・・・・・・第３番目グリーンシ
ート層、１５・・・・・・貫通孔、１６・・・・・・第
ｎ番目グリーンシート層、１７°、２４・・・・・・入
射端電極、１７．２５・・・・・・出力端電極、１８・
・・・・・二次電子放出層、２２・・・・・・ガラス円
筒、２６・・・・・・電子。
代理人の氏名 弁理士 中尾敏男 はか１名第１図
ｔＳ貫通孔
第１図
／ＳFIG. 1 fat is a sectional view of a secondary electron multiplier according to the present invention,
Fig. 1 fb) is the elevation view, Fig. 1 te1. (dl,
(El is a cross-sectional view in the manufacturing process, and the second leap is a cross-sectional view of the conventional example. 1)... Base film, 12... First green sheet layer, 13... ...Second green sheet layer, 14...Third green sheet layer, 15...Through hole, 16...Nth green sheet layer, 17 °, 24...Incidence end electrode, 17.25...Output end electrode, 18.
...Secondary electron emission layer, 22...Glass cylinder, 26...Electron. Name of agent: Patent attorney Toshio Nakao (1 person) Figure 1 tS Through hole Figure 1/S
Claims (5)
らなるペーストを印刷し、所望形状のパターンを多数個
、同時に形成させてシート状にする工程において、この
印刷した二次電子放射性物質の抵抗値が第１枚目のシー
ト状フィルムよりは第２枚目のシート状フィルムの方が
高くなるように、順次高い抵抗値の二次電子放射性物質
からなるペーストを印刷してシート状にする工程と、こ
のシート状フィルムから有機系ベースフィルムを剥離し
パターン形成された二次電子放射性物質のみからなるシ
ートをその抵抗値が連続的に増加する方向に順番に複数
枚、積層圧着する工程と、脱バインダのための熱処理工
程と焼結のための高温焼成工程により、貫通孔の内壁の
二次電子放出層が連続的な抵抗値分布をもつ二次電子増
倍管を同時に多数個形成させることを特徴とする二次電
子増倍器の製造方法。(1) In the process of printing a paste made of a secondary electron emissive substance on an organic base film and simultaneously forming a large number of patterns of a desired shape into a sheet, the resistance of the printed secondary electron emissive substance is A process of printing pastes made of secondary electron radioactive substances having successively higher resistance values so that the second sheet-like film has a higher resistance value than the first sheet-like film and forming it into sheets. and a step of peeling off the organic base film from this sheet-like film and sequentially laminating and press-bonding a plurality of patterned sheets consisting only of secondary electron radioactive substances in a direction in which the resistance value continuously increases; Through a heat treatment process for binder removal and a high-temperature firing process for sintering, a large number of secondary electron multiplier tubes whose secondary electron emission layer on the inner wall of the through hole has a continuous resistance value distribution are simultaneously formed. A method for manufacturing a secondary electron multiplier characterized by:
導体磁器であることを特徴とする特許請求の範囲第（１
）項記載の二次電子増倍器の製造方法。(2) Claim No. 1, characterized in that the secondary electron emissive material is perovskite semiconductor ceramic.
) The method for manufacturing the secondary electron multiplier described in item 2.
磁器であることを特徴とする特許請求の範囲第（２）項
記載の二次電子増倍器の製造方法。(3) The method for manufacturing a secondary electron multiplier according to claim (2), wherein the secondary electron emissive material is barium titanate ceramic.
時間であることを特徴とする特許請求の範囲第（１）項
記載の二次電子増倍器の製造方法。(4) The heat treatment process is performed in the atmosphere at 600-700℃, 1-2
A method for manufacturing a secondary electron multiplier according to claim (1), wherein the time is a time.
１〜２時間であることを特徴とする特許請求の範囲第（
１）項記載の二次電子増倍器の製造方法。(5) The high temperature firing process is performed at 1000-1200℃ in the atmosphere.
Claim No. 1, characterized in that the duration is 1 to 2 hours.
1) A method for manufacturing a secondary electron multiplier according to item 1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP872388A JPH01186731A (en) | 1988-01-19 | 1988-01-19 | Manufacture of secondary electron multiplier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP872388A JPH01186731A (en) | 1988-01-19 | 1988-01-19 | Manufacture of secondary electron multiplier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01186731A true JPH01186731A (en) | 1989-07-26 |
Family
ID=11700872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP872388A Pending JPH01186731A (en) | 1988-01-19 | 1988-01-19 | Manufacture of secondary electron multiplier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01186731A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011525294A (en) * | 2008-06-20 | 2011-09-15 | アーレディエンス， インコーポレイテッド | Microchannel plate device with adjustable resistive film |
| RU2756843C2 (en) * | 2017-06-30 | 2021-10-06 | Хамамацу Фотоникс К.К. | Electronic multiplier |
-
1988
- 1988-01-19 JP JP872388A patent/JPH01186731A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011525294A (en) * | 2008-06-20 | 2011-09-15 | アーレディエンス， インコーポレイテッド | Microchannel plate device with adjustable resistive film |
| US9064676B2 (en) | 2008-06-20 | 2015-06-23 | Arradiance, Inc. | Microchannel plate devices with tunable conductive films |
| US9368332B2 (en) | 2008-06-20 | 2016-06-14 | Arradiance, Llc | Microchannel plate devices with tunable resistive films |
| RU2756843C2 (en) * | 2017-06-30 | 2021-10-06 | Хамамацу Фотоникс К.К. | Electronic multiplier |
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