JPH01186635A - Rear metal forming device for semiconductor element - Google Patents
Rear metal forming device for semiconductor elementInfo
- Publication number
- JPH01186635A JPH01186635A JP624588A JP624588A JPH01186635A JP H01186635 A JPH01186635 A JP H01186635A JP 624588 A JP624588 A JP 624588A JP 624588 A JP624588 A JP 624588A JP H01186635 A JPH01186635 A JP H01186635A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- metal
- storage container
- molten metal
- discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 title claims abstract description 52
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 6
- 238000007599 discharging Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/743—Apparatus for manufacturing layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L2224/743—Apparatus for manufacturing layer connectors
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Molten Solder (AREA)
- Coating With Molten Metal (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、半導体素子の裏メタル形成装置に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a back metal forming apparatus for semiconductor elements.
（従来の技術・発明が解決しようとする問題点）従来の
半導体素子の裏メタルの形成法の１つには真空蒸着法等
があったが、真空蒸着法による裏メタル形成では裏メタ
ルの膜厚が大きな場合の形成には相当に長い時間を必要
とし生産性がきわめて悪いという問題があった。(Problems to be solved by the conventional technology/invention) One of the conventional methods for forming the back metal of semiconductor elements is vacuum evaporation, but in forming the back metal by vacuum evaporation, the back metal film is When the thickness is large, a considerable amount of time is required to form the film, resulting in extremely poor productivity.
本発明は、上記問題点に鑑みてなされたものであって、
半導体素子の裏面に所定の膜厚でもって裏メタルを短時
間で精度良く形成できるようにすることを目的としてい
る。The present invention has been made in view of the above problems, and includes:
The purpose is to form a back metal with a predetermined thickness on the back surface of a semiconductor element in a short time and with high precision.
（問題点を解決するための手段）
このような目的を達成するために本発明は、半導体素子
をその裏面を上部に向けて搭載する回転可能な搭載台を
内部に有する収納容器と、前記半導体素子の裏面に形成
される裏メタルの材料である溶融メタルを前記収納容器
内の搭載台上に搭載された半導体素子の裏面に向けて定
量制御して吐出する溶融メタル吐出機構と、前記収納容
器、および前記搭載台に搭載ぎれた半導体素子の裏面に
形成された裏メタルを加熱する加熱機構と、前記搭載台
を所定速度で回転させる回転機構とを具備したことを特
徴としている。(Means for Solving the Problems) In order to achieve such an object, the present invention provides a storage container having a rotatable mounting base therein, on which a semiconductor element is mounted with its back side facing upward; a molten metal discharge mechanism that quantitatively controls and discharges molten metal, which is a material for a back metal formed on the back side of the element, toward the back side of the semiconductor element mounted on the mounting base in the storage container; and the storage container. and a heating mechanism that heats a back metal formed on the back surface of the semiconductor element mounted on the mounting base, and a rotation mechanism that rotates the mounting base at a predetermined speed.
（作用）
収納容器に収納された半導体素子の裏面上には、溶融メ
タル吐出機構と、加熱機構と、回転機構とにより裏メタ
ルの材料である溶融メタルが吐出・加熱されて付着され
るが、この場合の溶融メタルの吐出量と加熱温度と搭載
台の回転速度とを制御することで半導体素子の裏面には
裏メタルを短時間で所定の膜厚で効率良く形成すること
ができる。(Function) Molten metal, which is the material of the back metal, is discharged and heated by the molten metal discharge mechanism, the heating mechanism, and the rotation mechanism, and is deposited on the back surface of the semiconductor element housed in the storage container. In this case, by controlling the discharge amount of molten metal, the heating temperature, and the rotational speed of the mounting base, it is possible to efficiently form the back metal with a predetermined thickness on the back surface of the semiconductor element in a short time.
（実施例）
以下、本発明の実施例を図面を参照して詳細に説明する
。第１図は本発明の実施例に係る半導体素子の裏メタル
形成装置の概略構成図である。第１図において、２は半
導体素子４が裏メタルが形成されるその裏面を上部に向
けて搭載される回転可能な搭載台６を内部に有する収納
容器である。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings. FIG. 1 is a schematic diagram of a back metal forming apparatus for a semiconductor element according to an embodiment of the present invention. In FIG. 1, reference numeral 2 denotes a storage container having a rotatable mounting base 6 therein, on which a semiconductor element 4 is mounted with the back surface on which the back metal is formed facing upward.
この搭載台６において、半導体素子４は真空チャックで
その搭載台６にチャックされて搭載される。In this mounting base 6, the semiconductor element 4 is chucked and mounted on the mounting base 6 using a vacuum chuck.
８は半導体素子４の裏面に形成される裏メタルの材料で
ある溶融メタルを収納容器２内の搭載台６上に搭載され
た半導体素子４に定量制御して吐出する溶融メタル吐出
機構である。Reference numeral 8 denotes a molten metal discharging mechanism for quantitatively controlling and discharging molten metal, which is the material of the back metal formed on the back surface of the semiconductor element 4, onto the semiconductor element 4 mounted on the mounting base 6 in the storage container 2.
溶融メタル吐出機構８は、溶融メタルｌＯが収納された
収納容器１２と、その収納容器１２の内壁に設けられた
ヒータ１４と、その一端を収納容器１２内の溶融メタル
１０中に浸けられるとともに、他端をポンプ１６の吸入
口に接続された吸入管＋８と、一端をポンプ１６の吐出
口に接続され、他端を収納容器２内に臨まされた吐出管
２０と、一端を収納容器２の底部に連通接続され、他端
を収納容器１２内の溶融メタルｌＯ中に浸けられた排出
管２２とから構成されている。The molten metal discharge mechanism 8 includes a storage container 12 containing molten metal IO, a heater 14 provided on the inner wall of the storage container 12, and one end of which is immersed in the molten metal 10 inside the storage container 12. A suction pipe +8 whose other end is connected to the suction port of the pump 16, a discharge pipe 20 whose one end is connected to the discharge port of the pump 16 and whose other end faces into the storage container 2, and one end of which is connected to the storage container 2. The discharge pipe 22 is connected to the bottom and has the other end immersed in the molten metal lO in the storage container 12.
２４は収納容器２の外周部に設けられてその収納容器２
を加熱する加熱機構として作用する赤外線ヒータである
。２６は収納容器２内の搭載台６に搭載された半導体素
子４の裏面に付着した溶融メタルを加熱するために、回
転支持台２８に、その先端に凹面鏡２９付きの赤外線ラ
ンプ３０を取り付けたランプ保持棒３２の基部を取り付
けて構成された加熱機構である。24 is provided on the outer periphery of the storage container 2 and
This is an infrared heater that acts as a heating mechanism. Reference numeral 26 denotes a lamp in which an infrared lamp 30 with a concave mirror 29 is attached to the tip of the rotary support base 28 in order to heat the molten metal attached to the back surface of the semiconductor element 4 mounted on the mounting base 6 in the storage container 2. This is a heating mechanism configured by attaching the base of the holding rod 32.
３４はその上端に搭載台６を取り付けられた回転軸３６
の基部に接続されたモータであり、このモータ３４は搭
載台６を所定速度で回転させる回転機構として作用する
。34 is a rotating shaft 36 with a mounting base 6 attached to its upper end.
This motor 34 acts as a rotation mechanism that rotates the mounting base 6 at a predetermined speed.
次に、動作を説明する。すなわち、収納容器２内の搭載
台６の上に半導体素子がその裏面を上に向けて搭載され
る。そして、モータ３４によりその搭載台６が所定の回
転速度で回転制御される。Next, the operation will be explained. That is, the semiconductor element is mounted on the mounting base 6 in the storage container 2 with its back surface facing upward. The rotation of the mounting base 6 is controlled by the motor 34 at a predetermined rotational speed.
次に、ポンプ１６が作動して収納容器１２内の溶融メタ
ルＩＯが吸入管１８で吸入されるとともに、吐出管２０
から収納容器１２内の半導体素子４の裏面上に吐出され
る。そうすると、半導体素子４の裏面上には溶融メタル
が所定の膜厚で付着するとともに、その付着した溶融メ
タルの内、余分の溶融メタルは、赤外線ランプ３０で加
熱されながら収納容器２の内周壁に振り切られる。振り
切られた溶融メタルは収納容器２が赤外線ヒータ２４で
加熱されているから、固化するｍ；となく排出管２２を
通って収納容器に２内に回収される。Next, the pump 16 is operated and the molten metal IO in the storage container 12 is sucked into the suction pipe 18, and the discharge pipe 20
The liquid is then discharged onto the back surface of the semiconductor element 4 in the storage container 12. Then, the molten metal adheres to the back surface of the semiconductor element 4 with a predetermined thickness, and the excess molten metal of the adhered molten metal is heated by the infrared lamp 30 and is deposited on the inner circumferential wall of the storage container 2. I get shaken off. Since the storage container 2 is heated by the infrared heater 24, the shaken-off molten metal passes through the discharge pipe 22 and is collected into the storage container 2 without solidifying.
そして、半導体素子４の裏面に付着した溶融メタルは裏
メタルとして残される。The molten metal adhering to the back surface of the semiconductor element 4 is left behind as back metal.
（効果）
以上説明したことから明らかなように本発明によれば、
収納容器に収納された半導体素子の裏面上には、溶融メ
タル吐出機構と、加熱機構と、回転機構とにより裏メタ
ルの材料である溶融メタルが付着されるのであるが、そ
の溶融メタルは、溶融メタル吐出機構からの吐出量と加
熱機構の加熱温度と搭載台の回転速度とを制御すること
で所定量付着させることができるから、その裏面に裏メ
タルを短時間で効率良く所定の膜厚に形成することがで
きる。(Effects) As is clear from the above explanation, according to the present invention,
Molten metal, which is the material for the back metal, is deposited on the back surface of the semiconductor element housed in the storage container by a molten metal discharging mechanism, a heating mechanism, and a rotating mechanism. By controlling the discharge amount from the metal discharge mechanism, the heating temperature of the heating mechanism, and the rotation speed of the mounting base, it is possible to deposit a predetermined amount of metal on the back surface, so that the back metal can be coated to the desired thickness in a short time and efficiently. can be formed.
第１図は本発明の実施例に係る半導体素子の裏メタル形
成装置の概略構成図である。
２・・・収納容器、４・・・半導体素子、６・・・搭載
台、８・・・溶融メタル吐出機構、１０・・・溶融メタ
ル、１２・・・収納容器、１４・・・ヒータ、１６・・
・ポンプ、１８・・・吸入管、２０・・・吐出管、２２
・・・排出管、２４・・・赤外線ヒータ、２６・・・加
熱機構、３０・・・赤外線ランプ。FIG. 1 is a schematic diagram of a back metal forming apparatus for a semiconductor element according to an embodiment of the present invention. 2... Storage container, 4... Semiconductor element, 6... Mounting stand, 8... Molten metal discharge mechanism, 10... Molten metal, 12... Storage container, 14... Heater, 16...
・Pump, 18...Suction pipe, 20...Discharge pipe, 22
...Discharge pipe, 24...Infrared heater, 26...Heating mechanism, 30...Infrared lamp.
Claims (1)
転可能な搭載台を内部に有する収納容器と、前記半導体
素子の裏面に形成される裏メタルの材料である溶融メタ
ルを前記収納容器内の搭載台上に搭載された半導体素子
の裏面に向けて定量制御して吐出する溶融メタル吐出機
構と、 前記収納容器、および前記搭載台に搭載された一半導体
素子の裏面に形成された裏メタルを加熱する加熱機構と
、 前記搭載台を所定速度で回転させる回転機構と、を具備
したことを特徴とする半導体素子の裏メタル形成装置。(1) A storage container having a rotatable mounting base on which a semiconductor element is mounted with its back side facing upward, and a molten metal that is the material of the back metal formed on the back side of the semiconductor element inside the storage container. a molten metal discharge mechanism that discharges molten metal in a quantitatively controlled manner toward the back side of a semiconductor element mounted on a mounting base; 1. A back metal forming apparatus for a semiconductor element, comprising: a heating mechanism that heats the mounting base; and a rotation mechanism that rotates the mounting table at a predetermined speed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP624588A JP2589525B2 (en) | 1988-01-14 | 1988-01-14 | Back metal forming equipment for semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP624588A JP2589525B2 (en) | 1988-01-14 | 1988-01-14 | Back metal forming equipment for semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01186635A true JPH01186635A (en) | 1989-07-26 |
| JP2589525B2 JP2589525B2 (en) | 1997-03-12 |
Family
ID=11633114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP624588A Expired - Lifetime JP2589525B2 (en) | 1988-01-14 | 1988-01-14 | Back metal forming equipment for semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2589525B2 (en) |
-
1988
- 1988-01-14 JP JP624588A patent/JP2589525B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2589525B2 (en) | 1997-03-12 |
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