JPS61124569A - Rotary substrate supporting device - Google Patents

Rotary substrate supporting device

Info

Publication number
JPS61124569A
JPS61124569A JP24506784A JP24506784A JPS61124569A JP S61124569 A JPS61124569 A JP S61124569A JP 24506784 A JP24506784 A JP 24506784A JP 24506784 A JP24506784 A JP 24506784A JP S61124569 A JPS61124569 A JP S61124569A
Authority
JP
Japan
Prior art keywords
substrate
thin film
heating
holder
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24506784A
Other languages
Japanese (ja)
Inventor
Tsuneo Mitsuyu
常男 三露
Osamu Yamazaki
山崎 攻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP24506784A priority Critical patent/JPS61124569A/en
Publication of JPS61124569A publication Critical patent/JPS61124569A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • C23C14/505Substrate holders for rotation of the substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To form stably a thin film whose film thickness and film quality are uniform, on a substrate by heating directly the holder of a thin film forming substrate, measuring a temperature, and making the substrate rotatable, in various thin film forming devices. CONSTITUTION:In a vacuum tank 6 of a vacuum vapor-depositing device, a spatter device and other thin film forming device, a heating use heater 4 and a temperature measuring device 5 are embedded into the holder 2 of the substrate 1 for forming a thick film. Also, the substrate holder 2 rotates in reverse the rotating direction at every one rotation by a pulse motor 31. The lead wire 41 of the substrate 1 heating use heater 4, and the lead wire 51 of the temperature measuring device 5 can follow the inverted rotation by a slight twist and with a sufficient allowance, direct heating can be executed, the substrate 2 can be heated with an excellent thermal efficiency, and also a thin film whose film thickness and film quality are uniform can be formed on the substrate.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、各種の薄膜形成において用いられる回転式基
板支持装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a rotary substrate support device used in forming various thin films.

従来の技術 真空蒸着装置、スパッタ装置9分子線エピタキシー装置
、化学的気相成長装置などの各種薄膜形成装置において
、良好な膜質を得るために基板を加熱すると共に、膜厚
や膜組成のむらをなくすために基板を回転させることが
一般的に行なわれている。
Conventional technology In various thin film forming apparatuses such as vacuum evaporation equipment, sputtering equipment, 9-molecular beam epitaxy equipment, and chemical vapor deposition equipment, the substrate is heated to obtain good film quality, as well as to eliminate unevenness in film thickness and film composition. For this reason, it is common practice to rotate the substrate.

以下従来の技術を図面を参照しながら説明する。The conventional technology will be explained below with reference to the drawings.

第2図は従来の加熱機構を有する回転式基板支持装置を
模式的に示す断面図である。この図において、1は基板
、2は基板ホルダ、3は回転機構、4は加熱機構(ヒー
ター)、6は測温機構、6は真空容器である。上記の構
成において基板ホルダ2はモーター311回転軸32.
歯車33から構成される。回転機構3により駆動され、
基板面に垂直な軸の回りを連続的に回転する。一方、加
熱機構4はリード線41を外部に取り出す必要上真空容
器6に固定されていて基板ホルダ2を熱輻射により間接
的に加熱する。
FIG. 2 is a sectional view schematically showing a rotary substrate support device having a conventional heating mechanism. In this figure, 1 is a substrate, 2 is a substrate holder, 3 is a rotating mechanism, 4 is a heating mechanism (heater), 6 is a temperature measuring mechanism, and 6 is a vacuum container. In the above configuration, the substrate holder 2 has a motor 311 rotating shaft 32.
It is composed of a gear 33. Driven by the rotation mechanism 3,
Continuous rotation around an axis perpendicular to the substrate surface. On the other hand, the heating mechanism 4 is fixed to the vacuum container 6 in order to take out the lead wire 41 to the outside, and indirectly heats the substrate holder 2 by thermal radiation.

また、測温機構6も真空容器6に固定されていて基板ホ
ルダ2の近傍の温度を測定する。
Further, a temperature measuring mechanism 6 is also fixed to the vacuum container 6 and measures the temperature in the vicinity of the substrate holder 2.

発明が解決しようとする問題点 このような上記の構成においては加熱が間接的であるた
めに熱効率が悪く、加熱機構を所望の基板温度よりもは
るかに高い温度に保つ必要がある。
Problems to be Solved by the Invention In the above-mentioned configuration, heating is indirect, resulting in poor thermal efficiency, and it is necessary to maintain the heating mechanism at a temperature much higher than the desired substrate temperature.

らのために所要電力が大きい、基板温度に限界がある。Therefore, the power required is large and the substrate temperature is limited.

ガス放出が多く真空度が低下する等の問題点があり、又
、測温も間接的であるために真の基板温度を測定するこ
とができず、基板温度を一定に制御することが困難とな
り、このため膜質が安定しないという問題点も併せ持っ
ている。
There are problems such as a lot of gas being released and a decrease in the degree of vacuum, and since the temperature measurement is indirect, it is not possible to measure the true substrate temperature, making it difficult to control the substrate temperature at a constant level. Therefore, there is also the problem that the film quality is unstable.

本発明はこのような従来の問題点に鑑み、基板ホルダを
直接加熱、測温しつつ基板を回転させ得る機構を提供す
るものであり、これにより均一な膜厚と膜質を有する薄
膜を安定に形成することを目的とする。
In view of these conventional problems, the present invention provides a mechanism that can rotate the substrate while directly heating and measuring the temperature of the substrate holder, thereby stably forming a thin film with uniform thickness and quality. The purpose is to form.

問題点を解決するための手段 本発明は、真空容器に固定された加熱機構および測温機
構をそれぞれ回転機構を備えた基板ホルダに固定し、前
記基板ホルダの回転方向をあらかじめ設定さnた角度ご
とに逆転させることにより基板ホルダを直接に加熱測温
しながら基板回転を可能とするものである。
Means for Solving the Problems The present invention fixes a heating mechanism and a temperature measuring mechanism fixed to a vacuum container to a substrate holder equipped with a rotation mechanism, respectively, and rotates the rotation direction of the substrate holder at a preset angle. By reversing each time, it is possible to rotate the substrate while directly heating and measuring the temperature of the substrate holder.

作用 上記手段を用いることにより従来技術と同様の基板回転
効果を保ったまま基板を直接に加熱、測温することがで
きる。
Operation By using the above means, it is possible to directly heat and measure the temperature of the substrate while maintaining the same substrate rotation effect as in the prior art.

実施例 第1図は本発明の一実施例の回転式基板支持装置を模式
的に示す断面図である。本図において従来技術と共通の
構成要素の番号は第2図と同じにしている。本実施例で
は、モーター31にパルスモータ−を用いて基板ホルダ
2の回転方向を1回転ごとに逆転させている。また加熱
機構4と測温機構6は基板ホルダ2に埋めこまれており
、直接的に加熱、測温を行わせている。この機構におい
Embodiment FIG. 1 is a sectional view schematically showing a rotary substrate support device according to an embodiment of the present invention. In this figure, the numbers of the components common to the prior art are the same as in FIG. 2. In this embodiment, a pulse motor is used as the motor 31, and the direction of rotation of the substrate holder 2 is reversed every rotation. Further, the heating mechanism 4 and the temperature measurement mechanism 6 are embedded in the substrate holder 2, and directly perform heating and temperature measurement. This mechanism smells.

て、基板ホルダーは1回転ごとに往復回転運動を行うの
で加熱機構と測温機構のリード線41゜51のねじれは
わずかで十分な余裕を持って回転に追随でき、従来技術
と同様に真空容器外に取り出せる。
Since the substrate holder performs a reciprocating rotational movement every rotation, the lead wires 41°51 of the heating mechanism and temperature measuring mechanism are only slightly twisted and can follow the rotation with sufficient margin. Can be taken outside.

なお、本実施例では基板の反転をパルスモータ−とその
駆動回路により実現しているが他の方法、たとえば、基
板が定位置まで回転したことをリミットスイッチなどで
検知して直ちにモーターを逆回転させる等の方法を用い
ても良いことはいうまでもない。
In this example, the board is reversed using a pulse motor and its drive circuit, but other methods may be used, such as detecting when the board has rotated to a fixed position using a limit switch, etc., and immediately reversing the motor. It goes without saying that a method such as letting it happen may also be used.

発明の効果 以上のように本発明は、基板ホルダを所定の角度ごとに
反転させることによって従来と同様の基板回転を保った
ままで基板を直接的に加熱、測温することが可能となる
ものであり、その結果、均一な膜質を有する薄膜を安定
に形成できることとなり、また低電力で高温まで基板を
加熱することができ、又放出ガスによる真空度の低下も
少くなるという優れた効果が得られ、実用上大きな効果
を持つ発明である。
Effects of the Invention As described above, the present invention makes it possible to directly heat and measure the temperature of a substrate while maintaining the same rotation of the substrate as in the past by inverting the substrate holder at predetermined angles. As a result, it is possible to stably form a thin film with uniform film quality, the substrate can be heated to high temperatures with low power, and the excellent effect of reducing the degree of vacuum due to released gas is obtained. This is an invention that has great practical effects.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の回転式基板支持装置の構造
を示す断面図であり、第2図は従来の回転式基板支持装
置の構造を示す断面図である。 1・・・・・・基板、2・・・・・・基板ホルダ、3・
・・・・・回転機構、31・・・・・・モーター、32
・・・・・・回転軸、33・・・・・・歯車、34・・
・・・・モータ一連動回路装置、4・・・・・・加熱機
構、5・・・・・・測温機構、6・・・・・・真空容器
。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
FIG. 1 is a sectional view showing the structure of a rotary substrate support device according to an embodiment of the present invention, and FIG. 2 is a sectional view showing the structure of a conventional rotary substrate support device. 1... Board, 2... Board holder, 3.
... Rotation mechanism, 31 ... Motor, 32
... Rotating axis, 33 ... Gear, 34 ...
...Motor series circuit device, 4...Heating mechanism, 5...Temperature measurement mechanism, 6...Vacuum container. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
figure

Claims (1)

【特許請求の範囲】[Claims] 回転機構を備えた基板ホルダに、加熱機構および測温機
構を固定し、前記基板ホルダの回転方向を設定された回
転角度ごとに逆転させることを特徴とする回転式基板支
持装置。
A rotary substrate support device, characterized in that a heating mechanism and a temperature measurement mechanism are fixed to a substrate holder equipped with a rotation mechanism, and the rotation direction of the substrate holder is reversed at every set rotation angle.
JP24506784A 1984-11-20 1984-11-20 Rotary substrate supporting device Pending JPS61124569A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24506784A JPS61124569A (en) 1984-11-20 1984-11-20 Rotary substrate supporting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24506784A JPS61124569A (en) 1984-11-20 1984-11-20 Rotary substrate supporting device

Publications (1)

Publication Number Publication Date
JPS61124569A true JPS61124569A (en) 1986-06-12

Family

ID=17128096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24506784A Pending JPS61124569A (en) 1984-11-20 1984-11-20 Rotary substrate supporting device

Country Status (1)

Country Link
JP (1) JPS61124569A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0472353U (en) * 1990-10-29 1992-06-25
JP2011194531A (en) * 2010-03-19 2011-10-06 Nakamichi Tekko Kk Assembling device of tapered roller bearing
CN102808164A (en) * 2011-05-31 2012-12-05 北京北方微电子基地设备工艺研究中心有限责任公司 Cavity device and substrate process unit with same
CN111364026A (en) * 2020-05-27 2020-07-03 上海陛通半导体能源科技股份有限公司 Reciprocating rotary CVD equipment and application method
CN113652645A (en) * 2021-08-05 2021-11-16 江苏微导纳米科技股份有限公司 Rotary film coating equipment

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0472353U (en) * 1990-10-29 1992-06-25
JP2011194531A (en) * 2010-03-19 2011-10-06 Nakamichi Tekko Kk Assembling device of tapered roller bearing
CN102808164A (en) * 2011-05-31 2012-12-05 北京北方微电子基地设备工艺研究中心有限责任公司 Cavity device and substrate process unit with same
CN111364026A (en) * 2020-05-27 2020-07-03 上海陛通半导体能源科技股份有限公司 Reciprocating rotary CVD equipment and application method
KR20210147935A (en) * 2020-05-27 2021-12-07 베톤 테크놀로지 상하이 인코포레이티드 Reciprocating type rotary CVD equipment and application method
CN113652645A (en) * 2021-08-05 2021-11-16 江苏微导纳米科技股份有限公司 Rotary film coating equipment
CN113652645B (en) * 2021-08-05 2023-08-11 江苏微导纳米科技股份有限公司 Rotary film plating equipment

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