JPH01181141A - Memory error detecting system - Google Patents

Memory error detecting system

Info

Publication number
JPH01181141A
JPH01181141A JP63006577A JP657788A JPH01181141A JP H01181141 A JPH01181141 A JP H01181141A JP 63006577 A JP63006577 A JP 63006577A JP 657788 A JP657788 A JP 657788A JP H01181141 A JPH01181141 A JP H01181141A
Authority
JP
Japan
Prior art keywords
memory
circuit
information
counting
storage area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63006577A
Other languages
Japanese (ja)
Inventor
Naohiro Masunaga
増永 直大
Michihiro Shinchi
新地 通宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP63006577A priority Critical patent/JPH01181141A/en
Publication of JPH01181141A publication Critical patent/JPH01181141A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To decide the presence or absence of memory errors by writing the number of logic '1' into a memory area different from the memory area for data as the check bits when the information is written into a memory and performing the comparison between said check bit and the bit read out of the memory for detection of the coincidence between both bits when the information are read out of the memory. CONSTITUTION:The logic '1', i.e., the information bits stored in a memory 1 are counted by a counter circuit 2. A comparator 4 compares the value of the circuit 2 with the number of check bits written into a memory area 3. When the information is written into the memory 1, the circuit 2 counts the number of logic '1' of the information and stores this count value into the area 3. When the information is read out of the memory 1, the circuit 2 inputs the number of logic '1' stored in the memory 1 to the comparator 4 and compared with the number of check bits of the memory area 3. If the coincidence is secured between both numbers, the absence of errors is decided.

Description

【発明の詳細な説明】 〔概 要〕 この発明は、メモリのエラーを検出するメモリ誤り検出
方式に関し、 メモリにおけるバーストエラーの検出を容易にしかも的
確に行うことを目的とし、 数ビット幅を持つメモリ素子の複数個を行方向に配設し
てなるメモリに、 前記メモリの行方向における論理゛1゛ の数を計数す
る計数回路と、該計数回路(2)の計数結果を格納する
記憶域と、該記憶域の計数結果と計数回路の計数結果を
比較する比較回路とを設け、前記メモリに情報を書き込
む際に、計数結果を前記記憶域に書き込み、前記メモリ
の情報を読み取る際の計数回路の計数と記憶域の計数結
果とを比較してメモリ誤りを検出するように構成する。
[Detailed Description of the Invention] [Summary] The present invention relates to a memory error detection method for detecting errors in memory, and aims to easily and accurately detect burst errors in memory. A memory including a plurality of memory elements arranged in the row direction, a counting circuit for counting the number of logical 1's in the row direction of the memory, and a storage area for storing the counting results of the counting circuit (2). and a comparison circuit that compares the counting result of the storage area with the counting result of the counting circuit, and when writing information to the memory, the counting result is written to the storage area, and when reading the information from the memory, a comparison circuit is provided. The circuit is configured to compare the count of the circuit with the count result of the storage area to detect a memory error.

〔産業上の利用分野〕[Industrial application field]

この発明は、メモリのエラーを検出するメモリ誤り検出
方式に関するものである。
The present invention relates to a memory error detection method for detecting memory errors.

情報処理の分野でメモリが盛んに用いられている。この
メモリも、比較的単価の安価なメモリ素子を行方向に配
置して所要のビット幅を得るという構成のものが用いら
れている。ところが、この構成であると、同一素子内に
隣接した複数ビットにバースト誤りを発生する危険があ
る。
Memory is widely used in the field of information processing. This memory also has a structure in which relatively inexpensive memory elements are arranged in the row direction to obtain the required bit width. However, with this configuration, there is a risk that burst errors may occur in a plurality of adjacent bits within the same element.

したがって、バースト誤りを検出可能な簡易なメモリ誤
り検出方式が要望されている。
Therefore, there is a need for a simple memory error detection method that can detect burst errors.

〔従来の技術〕[Conventional technology]

従来は、メモリにエラーが発生すると、エラーを訂正す
るコード即ち、誤り訂正符号(ECC)を用いている。
Conventionally, when an error occurs in a memory, a code for correcting the error, that is, an error correction code (ECC) is used.

例えば、256KX4ビット構成のメモリ素子が安価で
あり、一般に市販されている。このメモリを用いて、1
ワード16ビットのメモリを構成しようとすると、メモ
リ素子を4個用いるとともに、16ビットに対する誤り
検査ビットとして6ビット必要となり、256X4のメ
モリ素子がさらに2個必要となる。又単にパリティ検査
による誤り検出を行うためにも、8ビット当り1ビット
のパリティ検査ビットを用いるとして、256Kxlピ
ントのメモリが2個必要となる。しかしながらいずれの
方法を用いても素子の数が多くまた同一素子内に発生す
るバーストエラーは検出できない。
For example, memory elements with a 256K×4 bit configuration are inexpensive and generally available on the market. Using this memory, 1
When attempting to construct a memory of 16 bits per word, four memory elements are used, six bits are required as error check bits for the 16 bits, and two additional 256×4 memory elements are required. Furthermore, simply to perform error detection by parity check, two memories of 256Kxl pinto are required, assuming that one parity check bit is used for every 8 bits. However, no matter which method is used, the number of elements is large and burst errors occurring within the same element cannot be detected.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上記した従来の誤り訂正符号を用いてメモリの誤りを検
出することは、検出信頼度が悪くしかもコトス高になる
という問題がある。
Detecting errors in memory using the conventional error correction code described above has the problem of poor detection reliability and high cost.

この発明は、上記した従来の状況から、メモリにおける
バーストエラーの検出を容易にしかも的確に行えるメモ
リ誤り検出方式を提供することを目的とするものである
SUMMARY OF THE INVENTION In view of the above-mentioned conventional situation, it is an object of the present invention to provide a memory error detection method that can easily and accurately detect burst errors in a memory.

〔問題点を解決するための手段〕[Means for solving problems]

この発明は、第1図に示すように、メモリ1にチエツク
ビットを格納する記憶域3と、メモリ1の行方向の論理
゛1゛ 数を計数する計数回路2と、記憶域3のチエツ
クビットの数と計数回路2の計数とを比較する比較回路
4を設けである。
As shown in FIG. 1, the present invention includes a memory area 3 for storing check bits in a memory 1, a counting circuit 2 for counting the number of logical 1's in the row direction of the memory 1, and a memory area 3 for storing check bits in the memory area 3. A comparator circuit 4 is provided to compare the number of the numbers and the count of the counting circuit 2.

〔作 用] メモリ1に情報を書込む場合に、論理”1゛の数を計数
回路2で計数して記憶域3にチエツクビットを書き込む
。メモリ1の情報を読み取る場合には、読み取った論理
゛1゛ を計数回路2で計数し、記憶域3のチエツクビ
ットの数とを比較回路4にて比較し、一致するとメモリ
誤り無しとする。
[Function] When writing information to memory 1, the number of logic "1" is counted by counting circuit 2 and a check bit is written to storage area 3. When reading information from memory 1, the number of logic "1" is counted and a check bit is written to storage area 3. 1 is counted by a counting circuit 2 and compared with the number of check bits in the storage area 3 by a comparing circuit 4. If they match, it is determined that there is no memory error.

計数回路と比較回路とを付設する簡単な構成でメモリの
誤り検出が可能となる。
Memory error detection becomes possible with a simple configuration that includes a counting circuit and a comparison circuit.

〔実施例〕〔Example〕

第1図は本発明の実施例を示すブロック図である。メモ
リ1は、例えば256KX4ビットからなるメモリ素子
1−1〜1−4の4個を用いて、16ビットのメモリを
構成しである。チエツクビットを格納する記憶域3とし
て同じ256KX4ビットのメモリ素子を用いる。
FIG. 1 is a block diagram showing an embodiment of the present invention. The memory 1 is a 16-bit memory using four memory elements 1-1 to 1-4 each having, for example, 256K×4 bits. The same 256K×4 bit memory element is used as the storage area 3 for storing check bits.

メモリ1に格納された情報ビットの論理°1”は、計数
回路2で計数される。比較回路4は、計数回路2の計数
値と記憶域3のチエツクビット数とを比較するように構
成しである。
The logical degree 1'' of the information bits stored in the memory 1 is counted by the counting circuit 2. The comparator circuit 4 is configured to compare the count value of the counting circuit 2 with the number of check bits in the storage area 3. It is.

メモリ1に情報を書き込む時には、計数回路2は、情報
の論理゛1゛ の数を計数して、計数した値を該当する
記憶域3に格納する。
When writing information to the memory 1, the counting circuit 2 counts the number of logical units of the information and stores the counted value in the corresponding storage area 3.

メモリ1から情報を読み取る場合には、計数回路2にて
メモリlの情報ビットの論理”1′の数を比較回路4に
入力し、記憶域3のチエツクビットの数との比較を行い
、一致するとエラー無しと判定する。
When reading information from memory 1, the counting circuit 2 inputs the number of logical "1's" in the information bits of memory l to the comparator circuit 4, which compares it with the number of check bits in memory area 3 and finds a match. Then, it is determined that there is no error.

(発明の効果〕 以上の説明より明らかなように、この発明によれば、簡
易な構成でメモリにおけるバーストエラーの検出を容易
に的確に行えるものとなり、メモリを使用する上できわ
めて有用な効果を発揮する。
(Effects of the Invention) As is clear from the above description, according to the present invention, burst errors in memory can be easily and accurately detected with a simple configuration, and extremely useful effects can be obtained when using memory. Demonstrate.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施例を示すブロック図である。 図において、1はメモリ、2は計数回路、3は記憶域、
4は比較回路である。 滲発Eす’4q*にイ列QJ47’ Oラフ 6第1図
FIG. 1 is a block diagram showing an embodiment of the present invention. In the figure, 1 is a memory, 2 is a counting circuit, 3 is a storage area,
4 is a comparison circuit. Exuding E'4q* to A row QJ47' O rough 6 Fig. 1

Claims (1)

【特許請求の範囲】 数ビット幅を持つメモリ素子(1−1〜1−n)の複数
個を行方向に配設してなるメモリ(1)に、前記メモリ
(1)の行方向における論理’1’の数を計数する計数
回路(2)と、 該計数回路(2)の計数結果を格納する記憶域(3)と
、該記憶域(3)の計数結果と計数回路(2)の計数結
果を比較する比較回路(4)とを設け、前記メモリ(1
)に情報を書き込む際に、計数結果を前記記憶域(3)
に書き込み、前記メモリ(1)の情報を読み取る際の計
数回路(2)の計数と記憶域の計数結果とを比較してメ
モリ誤りを検出することを特徴とするメモリ誤り検出方
式。
[Scope of Claims] A memory (1) comprising a plurality of memory elements (1-1 to 1-n) each having a width of several bits arranged in the row direction is provided with logic in the row direction of the memory (1). A counting circuit (2) that counts the number of '1's, a storage area (3) that stores the counting results of the counting circuit (2), and a storage area (3) that stores the counting results of the storage area (3) and the counting results of the counting circuit (2). A comparison circuit (4) for comparing counting results is provided, and the memory (1)
), the counting results are stored in the storage area (3).
A memory error detection method characterized in that a memory error is detected by comparing a count of a counting circuit (2) when writing information to a memory (1) and a count result of a storage area when reading information from the memory (1).
JP63006577A 1988-01-13 1988-01-13 Memory error detecting system Pending JPH01181141A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63006577A JPH01181141A (en) 1988-01-13 1988-01-13 Memory error detecting system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63006577A JPH01181141A (en) 1988-01-13 1988-01-13 Memory error detecting system

Publications (1)

Publication Number Publication Date
JPH01181141A true JPH01181141A (en) 1989-07-19

Family

ID=11642182

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63006577A Pending JPH01181141A (en) 1988-01-13 1988-01-13 Memory error detecting system

Country Status (1)

Country Link
JP (1) JPH01181141A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008521123A (en) * 2004-11-19 2008-06-19 サムスン エレクトロニクス カンパニー リミテッド Data processing apparatus and method for flash memory

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008521123A (en) * 2004-11-19 2008-06-19 サムスン エレクトロニクス カンパニー リミテッド Data processing apparatus and method for flash memory
US8015344B2 (en) * 2004-11-19 2011-09-06 Samsung Electronics Co., Ltd. Apparatus and method for processing data of flash memory
JP4902547B2 (en) * 2004-11-19 2012-03-21 サムスン エレクトロニクス カンパニー リミテッド Data processing apparatus and method for flash memory
US8230166B2 (en) 2004-11-19 2012-07-24 Samsung Electronics Co., Ltd. Apparatus and method for processing data of flash memory

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