JPH01176327A - Production of perpendicular magnetic recording medium - Google Patents
Production of perpendicular magnetic recording mediumInfo
- Publication number
- JPH01176327A JPH01176327A JP33454187A JP33454187A JPH01176327A JP H01176327 A JPH01176327 A JP H01176327A JP 33454187 A JP33454187 A JP 33454187A JP 33454187 A JP33454187 A JP 33454187A JP H01176327 A JPH01176327 A JP H01176327A
- Authority
- JP
- Japan
- Prior art keywords
- film
- perpendicular magnetic
- magnetic recording
- recording medium
- ion plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000007733 ion plating Methods 0.000 claims abstract description 12
- 229920006254 polymer film Polymers 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 9
- 230000005415 magnetization Effects 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 abstract description 8
- -1 polyethylene terephthalate Polymers 0.000 abstract description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 abstract description 4
- 239000005020 polyethylene terephthalate Substances 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract description 2
- 239000000314 lubricant Substances 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 18
- 239000010410 layer Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 208000028659 discharge Diseases 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021385 hard carbon Inorganic materials 0.000 description 2
- SNGREZUHAYWORS-UHFFFAOYSA-N perfluorooctanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F SNGREZUHAYWORS-UHFFFAOYSA-N 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 229910000702 sendust Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、高密度磁気記録として好適な垂直磁気記録媒
体の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a perpendicular magnetic recording medium suitable for high-density magnetic recording.
従来の技術
近年磁気記録の高密度化の進歩には著しいものかあり、
強磁性金属薄膜を磁気記録層とする磁気記録媒体の実用
化に期待がかけられている[アイイーイーイー トラン
プクシ1/ズ オン マグネf イ/ 、X (I [
IE TR1NSACTIONS ON MAGNXT
IC8)。Conventional technology There has been remarkable progress in increasing the density of magnetic recording in recent years.
There are high hopes for the practical application of magnetic recording media that use ferromagnetic metal thin films as magnetic recording layers.
IE TR1NSACTIONS ON MAGNXT
IC8).
VOJ、MAG−21、NO,a、1217〜1220
(1985)参照]。VOJ, MAG-21, NO, a, 1217-1220
(1985)].
中でも、短波長になる程減磁損失が有利になる垂直磁気
記録は、膜面に垂直方向に磁化可能な特別な膜を必要と
するものの実用化に向は検討が続けられている。Among these, perpendicular magnetic recording, in which demagnetization loss becomes more advantageous as the wavelength becomes shorter, requires a special film that can be magnetized in a direction perpendicular to the film surface, but efforts are still being made to put it into practical use.
垂直磁気記録用の磁気記録媒体は、Go−Cr。The magnetic recording medium for perpendicular magnetic recording is Go-Cr.
Go −0r−Nb 、 Co−Ni−0等で垂直方向
に磁化可能な異方性をもった膜が、高分子フィルム上に
直接或いは、〒i、Go等の下地層を介して、形成され
ることで構成されるもので、実験室的には、スパッタリ
ング法で薄膜形成が行われている。しかし周知のごとく
、スパッタリング法では、薄膜形成速度が小さいことか
ら、磁気テープとしての垂直磁気記録媒体を製造するの
には適さず、特性は必ずしも満足できないが、電子ビー
ム蒸着法、イオンプレーティング法等が高速化の可能性
が大きく、検討されている[特開昭62−219234
号公報、同62−219235号会報等参照]0発明が
解決しようとする問題点
上記した構成で、あらかじめ高分子フィルムから十分ガ
スを放出させる前処理を行ったり、パッフグラウンドの
真空度を改善する等により、均一性は改良される傾向に
はあるが、スパッタリング法で得られるような物性を均
一に大面積に渡って得るには至っていないことから改善
が望まれていた0
本発明は、上記した事情に鑑みなされたもので、垂直磁
化膜の性能と均一性の両方共改善できる製造方法を提供
するものである。A perpendicularly magnetizable anisotropic film made of Go-0r-Nb, Co-Ni-0, etc. is formed directly on the polymer film or via an underlayer such as 〒i, Go, etc. In the laboratory, thin films are formed by sputtering. However, as is well known, the sputtering method is not suitable for manufacturing perpendicular magnetic recording media such as magnetic tapes due to its slow thin film formation rate, and the characteristics are not necessarily satisfactory. etc. have great potential for speeding up, and are being considered [Japanese Patent Application Laid-Open No. 62-219234
[Refer to Publication No. 62-219235, etc.]0 Problems to be solved by the invention With the above-mentioned configuration, it is possible to perform pre-treatment to sufficiently release gas from the polymer film, and to improve the degree of vacuum in the puff ground. Although there is a tendency for uniformity to be improved by methods such as sputtering, it has not yet been possible to obtain the physical properties uniformly over a large area as can be obtained by sputtering, so improvement has been desired. The present invention was developed in view of the above circumstances, and provides a manufacturing method that can improve both the performance and uniformity of a perpendicularly magnetized film.
問題点を解決するための手段
上記した問題点を解決するために本発明の垂直磁気記録
媒体の製造方法は、高分子フィルムに低エネルギーイオ
ン注入層を形成した後イオンプレーティング法によって
垂直磁化膜全形成するようにしたものである。Means for Solving the Problems In order to solve the above-mentioned problems, the method for manufacturing a perpendicular magnetic recording medium of the present invention involves forming a low-energy ion implantation layer on a polymer film, and then forming a perpendicular magnetization film by an ion plating method. It is designed to be completely formed.
作用
本発明の垂直磁気記録媒体め製造方法は、上記した構成
により、イオンプレーティング時に、高分子フィルムに
既に注入イオン層を表面に飽和レベルで存在せしめてる
ことから、エネルギーをもったイオンはそのエネルギー
を表面移動に費やすことになるので、結晶成長の改善、
欠陥の減少がはかられ、垂直磁化膜の結晶性の改善と均
一性の改善が図られることになる。Function: Due to the above-described structure, the method for manufacturing a perpendicular magnetic recording medium of the present invention has already caused the implanted ion layer to exist on the surface of the polymer film at a saturation level during ion plating, so that energetic ions can Improved crystal growth, as energy is spent on surface movement;
Defects are reduced, and the crystallinity and uniformity of the perpendicularly magnetized film are improved.
実施例
以下、図面を参照しながら本発明の一実施例の垂直磁気
記録媒体の製造方法について詳しく説明する0
図は本発明により得られる垂直磁気記録媒体の拡大断面
図である。図中、1はポリエチレンテレフタレート、ポ
リフェニレンサルファイド、ポリエーテルザルフオン、
ポリエチレンナフタレート等の高分子フィルムである。EXAMPLE Hereinafter, a method for manufacturing a perpendicular magnetic recording medium according to an embodiment of the present invention will be described in detail with reference to the drawings. The figure is an enlarged sectional view of a perpendicular magnetic recording medium obtained according to the present invention. In the figure, 1 is polyethylene terephthalate, polyphenylene sulfide, polyethersulfone,
It is a polymer film such as polyethylene naphthalate.
2は6〜20 KeVの低エネルギーイオン注入層で、
垂直磁化膜に用いる元素のイオンを注入するのが好まし
い。イオンは総量で6〜200μム/dの注入密度の範
囲で最適条件化して実施するものとする。2 is a low energy ion implantation layer of 6 to 20 KeV,
It is preferable to implant ions of an element used for the perpendicularly magnetized film. The implantation is carried out under optimal conditions with a total ion implantation density in the range of 6 to 200 μm/d.
3は高周波イオンプレーティング法、直流加速イオンプ
レーティング法等のイオンプレーティング法で形成した
Co −Or 、 Co −Ta 、 Go −Ti
、Go −Ru 、 Go −V 、 Go −W 、
Go −Me 、 Co −0r−Wb等の0.05
〜0.3μmの垂直磁化膜である。4は保護潤滑剤層で
、プラズマ重合法、グロー放電分解法。3 is Co-Or, Co-Ta, Go-Ti formed by an ion plating method such as a high frequency ion plating method or a DC accelerated ion plating method.
, Go-Ru, Go-V, Go-W,
0.05 of Go-Me, Co-0r-Wb, etc.
It is a perpendicular magnetization film of ~0.3 μm. 4 is a protective lubricant layer, which is made using plasma polymerization method or glow discharge decomposition method.
真空蒸着法、スパッタリング法2反応蒸着法、溶液塗布
法等により形成される、100人〜300人程度の層で
ある。This is a layer of about 100 to 300 layers formed by a vacuum deposition method, a sputtering method, a two-reaction deposition method, a solution coating method, or the like.
以下、更に具体的に本発明の一実施例により製造した磁
気記録媒体について比較例との対比で詳しく説明する。In the following, a magnetic recording medium manufactured according to an embodiment of the present invention will be explained in more detail in comparison with a comparative example.
厚み1000mのポリエチレンテレフタレートフィルム
(表面平均粗さ25人、最大粗さ86人)を用い、10
KeV、55μ人/colOcrイオンを注入してから
、13.’58 (MHz)の高周波グロー放電中をC
o −Or (Co : 79.8%)蒸気流を通過さ
せる方法でイオンプレーティングを実施し、0.16μ
mのGo −Or垂直磁化膜を形成した。この時フィル
ムの巻取速度は26m/winであった。G。Using a polyethylene terephthalate film with a thickness of 1000 m (average surface roughness: 25 people, maximum roughness: 86 people),
After implanting KeV, 55μ people/colOcr ions, 13. '58 (MHz) during high frequency glow discharge
Ion plating was carried out by passing o -Or (Co: 79.8%) vapor flow, and 0.16μ
A Go-Or perpendicular magnetization film of m was formed. At this time, the film winding speed was 26 m/win. G.
−Or 垂直磁化膜上に、グラファイトをターゲット
にしてスパッタリング法でダイアモンド状硬質炭素薄膜
を100人、真空蒸着法でパーフロロオクタン酸を60
人蒸着し、8ミリ幅の磁気テープを製造した。-Or On the perpendicular magnetization film, 100% diamond-like hard carbon thin film was deposited by sputtering using graphite as a target, and 60% perfluorooctanoic acid was deposited by vacuum evaporation.
By manual deposition, an 8 mm wide magnetic tape was manufactured.
一方、比較例は、同じポリエチレンテレフタレートフィ
ルムを用い、表面を10 KHz 、 0.1Torr
。On the other hand, in the comparative example, the same polyethylene terephthalate film was used, and the surface was heated to 10 KHz and 0.1 Torr.
.
0□の条件のグロー放電処理を行い、その上でCo−c
r’6同じ条件でイオンプレーティングし、同じくダイ
アモンド状硬質炭素薄膜、パーフロロオクタン酸膜を形
成し、8ミリ幅の磁気テープを試作した。After performing glow discharge treatment under the conditions of 0□, Co-c
Ion plating was performed under the same conditions as r'6, a diamond-like hard carbon thin film and a perfluorooctanoic acid film were formed, and an 8 mm wide magnetic tape was prototyped.
両者のテープ全、8ミリビデオを改造したギャップ長0
.12μmのメタルインギャップタイプのセンダストヘ
ッドにより、ビット長0.19μmの矩形波を記録再生
し、帯域12 (MHz)の広帯域C/Nを比較した。All tapes of both, 8mm video modified with 0 gap length.
.. A rectangular wave with a bit length of 0.19 μm was recorded and reproduced using a 12 μm metal-in-gap type Sendust head, and the broadband C/N in a band of 12 (MHz) was compared.
実施例、比較例共、任意の場所から10077!長のテ
ープを30巻抽出して、測定した。実施例の1テープを
R,eference tape として仮に決めて
そのC/NをO(dB)とした。Reference
tapeO長手でのC/N変化はo、2(dB)以内で
均一であった。実施例の30巻は−o、a(dB)から
+o、a(dB)と均一であったが、比較例は−2,6
(dB)〜−0,6(dB)とC/Nも低く、バラツキ
も大きがった。10077 examples and comparative examples from any location! Thirty rolls of long tape were extracted and measured. One tape of the embodiment was temporarily determined as R, reference tape, and its C/N was set to O (dB). Reference
The C/N change along the tapeO length was uniform within 0.2 (dB). The 30th turn of the example was uniform from -o, a (dB) to +o, a (dB), but the comparative example was -2,6
(dB) to -0.6 (dB), the C/N was also low and the variation was large.
ちなみに、高周波スパッタリング法でGo−Or垂直磁
化膜を形成したものは、C/Nは−0,4〜+0.3
(dB)でフィルムの巻取速度はターゲットを4個直列
に配したもので2.2 (m 7 win )とイオン
プレーティングの残塁下であった。By the way, the C/N of the Go-Or perpendicular magnetization film formed by high-frequency sputtering is -0.4 to +0.3.
The winding speed of the film (in dB) was 2.2 (m 7 win ) with four targets arranged in series, which was below the remaining base of ion plating.
発明の効果
以上のように本発明によれば、高速で高性能な垂直磁気
記録用の磁気記録媒体を製造できるすぐれた効果がある
。Effects of the Invention As described above, the present invention has an excellent effect in that a magnetic recording medium for high-speed, high-performance perpendicular magnetic recording can be manufactured.
図は本発明の一実施例に係る製造方法により製造した垂
直磁気記録媒体の拡大断面図である。
1・・・・・・高分子フィルム、2・・・・・・低エネ
ルギーイオン注入層、3・・・・・・垂直磁化膜。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名/−
−−嘉分子フィルム
2 −−− IIも丁4メ(−イオゾ主)J#3−−一
重j1風イ乙廖屹The figure is an enlarged cross-sectional view of a perpendicular magnetic recording medium manufactured by a manufacturing method according to an embodiment of the present invention. 1... Polymer film, 2... Low energy ion implantation layer, 3... Perpendicular magnetization film. Name of agent: Patent attorney Toshio Nakao and 1 other person/-
--Kamolecular film 2 --- II also Ding 4 Me (-Iozo main) J # 3 --- Single layer j1 wind Iot Liao 屹
Claims (1)
を形成した後、その上にイオンプレーティング法によっ
て垂直磁化膜を形成することを特徴とする垂直磁気記録
媒体の製造方法。A method for manufacturing a perpendicular magnetic recording medium, comprising forming a low energy ion implantation layer on the surface of a polymer film, and then forming a perpendicular magnetization film thereon by an ion plating method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33454187A JPH01176327A (en) | 1987-12-29 | 1987-12-29 | Production of perpendicular magnetic recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33454187A JPH01176327A (en) | 1987-12-29 | 1987-12-29 | Production of perpendicular magnetic recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01176327A true JPH01176327A (en) | 1989-07-12 |
Family
ID=18278564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP33454187A Pending JPH01176327A (en) | 1987-12-29 | 1987-12-29 | Production of perpendicular magnetic recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01176327A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1055745A1 (en) * | 1999-05-27 | 2000-11-29 | Sony Corporation | Method and apparatus for surface modification |
CN101953042A (en) * | 2008-02-14 | 2011-01-19 | 三菱电机株式会社 | Control center |
WO2012033988A1 (en) * | 2010-09-09 | 2012-03-15 | Varian Semiconductor Equipment Associates, Inc. | Technique for manufacturing bit patterned media |
-
1987
- 1987-12-29 JP JP33454187A patent/JPH01176327A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1055745A1 (en) * | 1999-05-27 | 2000-11-29 | Sony Corporation | Method and apparatus for surface modification |
CN101953042A (en) * | 2008-02-14 | 2011-01-19 | 三菱电机株式会社 | Control center |
JP5008729B2 (en) * | 2008-02-14 | 2012-08-22 | 三菱電機株式会社 | Control center |
WO2012033988A1 (en) * | 2010-09-09 | 2012-03-15 | Varian Semiconductor Equipment Associates, Inc. | Technique for manufacturing bit patterned media |
US8709533B2 (en) | 2010-09-09 | 2014-04-29 | Varian Semiconductor Equipment Associates, Inc. | Technique for manufacturing bit patterned media |
TWI488181B (en) * | 2010-09-09 | 2015-06-11 | Varian Semiconductor Equipment | Technique for manufacturing bit patterned media |
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