JPH01168047A - Power semiconductor - Google Patents

Abstract

PURPOSE:To prevent a power semiconductor from rising in its temperature by providing an element therein and a molding material for insulating the element, and composing it of a package formed with heat reflection or heat reflection layer. CONSTITUTION:A package 1 is formed with a heat insulating material, a heat reflecting material or a heat reflecting layer, and covers a molding material 2 and an element 3 enclosed by the material 2. A power semiconductor 4 is built in an electromagnetic cooking unit, and turned ON by a current generated in a heating coil 6 thereby to oscillate a control circuit through a terminal 5. Thus, since it interrupts or reflect the heat from the exterior of the semiconductor, if the heat generation of the semiconductor becomes small, its heat loss is reduced, more current can be fed to enlarge the specification of the semiconductor, thereby reducing its cost.

Description

[Detailed description of the invention] Industrial applications The present invention relates to power semiconductors.

Conventional technology A conventional power semiconductor of this type has an element mounted on a metal plate, has a molding material to insulate the element and improve heat dissipation, and is further covered with a package made of black resin. It was something.

Problems to be Solved by the Invention When such a conventional structure is incorporated into a cooking device, etc., it absorbs radiant heat from the heating source, resulting in higher heat loss than that of an actual semiconductor, resulting in high temperature easy to become. Furthermore, as semiconductors have recently become more powerful, semiconductors themselves tend to become hotter, making it difficult to use resins with poor heat dissipation.

The present invention solves these problems and aims to provide a power semiconductor including a package that can block or reflect heat from outside the semiconductor.

Means for Solving the Problems In order to solve the above-mentioned problems, the present invention provides a power semiconductor package comprising an element inside, a molding material insulating the element, and a heat reflecting layer or a heat reflecting layer. It is structured as follows.

Function: The power semiconductor of the present invention described above blocks or reflects heat from the outside, so in power semiconductors that tend to reach high temperatures inside the product, it is only necessary to consider countermeasures against high temperatures caused by self-heating. .

EXAMPLES Hereinafter, embodiments of the present invention will be described with reference to the drawings.

In the figures, Figures 1 and 2 are a cross-sectional view, a longitudinal cross-sectional view, and a cross-sectional view of equipment installation of a power semiconductor according to an embodiment of the present invention. The molding material 2 and the element 3 covered by the molding material 2 are covered with a package processed into a thermally reflective material or a thermally reflective layer coated with a white or golden glossy material so as to be reflective. As shown in FIG. 3, the power semiconductor is incorporated into, for example, an electromagnetic cooker, and the current generated in the heating coil 6 turns on the power semiconductor 4 and passes through the terminal 6 to cause the control circuit to oscillate. be done.

By processing the package 1 into a heat reflective material or a heat reflective layer as in the above configuration, it blocks and reflects heat from the outside of the semiconductor, so power semiconductors that tend to reach high temperatures inside the product can be used for self-heating. All you need to do is consider measures against high temperatures. Furthermore, if the heat generated by the semiconductor is reduced, heat loss will be reduced, allowing more current to flow. In other words, it is possible to expand the specifications of semiconductors and realize cost reductions.

In the above embodiment, the power semiconductor is a power transistor, but the power semiconductor is not limited to this, and as shown in FIGS. 4 and 6, the power semiconductor is a silicon PN transistor.
The effects of the present invention can also be achieved as a P triple diffusion type transistor.

Effects of the Invention As is clear from the description of the embodiments, the present invention provides the following effects.

(1) Since the power semiconductor package is processed with a heat reflective material or a heat reflective layer, it blocks and reflects heat from the outside.

(2) When the heat generation inside the semiconductor is reduced, heat loss is reduced, and more current can flow through the semiconductor. In other words, it is possible to completely reduce costs by expanding semiconductor specifications.

[Brief explanation of the drawing]

Fig. 1 is a cross-sectional view of a power transistor showing one embodiment of the present invention, Fig. 2 is a longitudinal sectional view thereof, Fig. 3 is a sectional view of an electromagnetic cooker showing an example of its use, and Fig. 4 is a cross-sectional view of a power transistor showing an example of its use. FIG. 6 is a cross-sectional view showing the embodiment, and FIG. 6 is a vertical cross-sectional view thereof. 1.4...Package, 2,6...Mold material, 3.6...Element. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 3
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Claims (1)

[Claims] A power semiconductor consisting of an element inside, a molding material that insulates the element, and a heat reflective material or a heat reflective layer covering the outer surface of the molding material.