JP2517954Y2 - Resin mold type semiconductor device - Google Patents

Resin mold type semiconductor device

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Publication number
JP2517954Y2
JP2517954Y2 JP1990087605U JP8760590U JP2517954Y2 JP 2517954 Y2 JP2517954 Y2 JP 2517954Y2 JP 1990087605 U JP1990087605 U JP 1990087605U JP 8760590 U JP8760590 U JP 8760590U JP 2517954 Y2 JP2517954 Y2 JP 2517954Y2
Authority
JP
Japan
Prior art keywords
hole
semiconductor
resin
thick
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP1990087605U
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Japanese (ja)
Other versions
JPH0444155U (en
Inventor
和洋 井上
Original Assignee
関西日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 関西日本電気株式会社 filed Critical 関西日本電気株式会社
Priority to JP1990087605U priority Critical patent/JP2517954Y2/en
Publication of JPH0444155U publication Critical patent/JPH0444155U/ja
Application granted granted Critical
Publication of JP2517954Y2 publication Critical patent/JP2517954Y2/en
Active legal-status Critical Current

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Description

【考案の詳細な説明】 産業上の利用分野 本考案は放熱板全面を樹脂にて被覆し電気的に被覆し
た樹脂モールド型半導体装置に関する。
DETAILED DESCRIPTION OF THE INVENTION Industrial Field of the Invention The present invention relates to a resin mold type semiconductor device in which the entire surface of a heat sink is coated with a resin and electrically coated.
従来の技術 第7図は電力用半導体装置を示す。図において1は放
熱板で、肉厚部1aの一端側1bを裏面1c側より段差hをも
って肉薄に形成し、この肉薄部1dに透孔1eを穿設してい
る。2は放熱板1の裏面1f上で肉薄部1dから離れた位置
にマウントされた半導体ペレット,3は複数本一組のリー
ドで、一本のリード3aは放熱板1に連結され、他のリー
ド3bは一端が半導体ペレット2の近傍に配置されてい
る。4は半導体ペレット2上の電極とリード3bとを電気
的に接続するワイヤ、5は半導体ペレット2、ワイヤ
4、リード3の基部、透孔1eの内周を含む放熱板1全面
を被覆した樹脂で、放熱板1の表面1f側の樹脂厚は、半
導体ペレット2やワイヤ4を被覆する必要もあって例え
ば2.5mm程度に厚く形成されているが、放熱板1の裏面1
c側の樹脂厚は耐電圧と熱伝導性を考慮して、例えば0.5
mm(500μ)程度に薄く設定され、最近では樹脂の性能
向上により0.3mm(300μ)程度のものも生産されてい
る。
2. Description of the Related Art FIG. 7 shows a power semiconductor device. In the figure, reference numeral 1 denotes a heat radiating plate in which one end side 1b of the thick portion 1a is thinned with a step h from the back surface 1c side, and a through hole 1e is formed in this thin portion 1d. 2 is a semiconductor pellet mounted on the back surface 1f of the heat sink 1 at a position away from the thin portion 1d, 3 is a set of a plurality of leads, and one lead 3a is connected to the heat sink 1 and other leads One end of 3b is arranged near the semiconductor pellet 2. 4 is a wire for electrically connecting the electrode on the semiconductor pellet 2 and the lead 3b, 5 is a resin which covers the entire surface of the heat dissipation plate 1 including the semiconductor pellet 2, the wire 4, the base of the lead 3 and the inner periphery of the through hole 1e The resin thickness on the front surface 1f side of the heat sink 1 is formed to be thick, for example, about 2.5 mm because it is necessary to cover the semiconductor pellets 2 and the wires 4.
Considering withstand voltage and thermal conductivity, the resin thickness on the c side is 0.5, for example.
It is set to a thin thickness of about mm (500μ), and recently, 0.3mm (300μ) has been produced due to the improvement of resin performance.
この半導体装置は一般的にトランスファ樹脂モールド
装置を用いて樹脂成型されるが、樹脂モールド金型内で
は、リード3を金型で挟持するとともに、肉厚1dから延
びる吊りピン(図示せず)を金型で挟持したり、金型か
ら突出した支持ピン(図示)ぜずによって肉薄部1dを支
持して、位置決めされ金型と放熱板裏面1cとの間を微小
間隔に保ち樹脂モールドされる。
This semiconductor device is generally resin-molded using a transfer resin molding device. In the resin-molding mold, the leads 3 are sandwiched by the mold, and hanging pins (not shown) extending from the wall thickness 1d are provided. The thin portion 1d is held by a mold or sandwiched by a support pin (not shown) protruding from the mold, and is positioned and resin-molded while maintaining a minute gap between the mold and the heat sink back surface 1c.
ここで肉厚部1aと肉薄部1dの間に段差hを設けるのは
吊ピンや支持ピンによる放熱板の露出部と取付面までの
沿面距離を長くするためである。
Here, the step h is provided between the thick portion 1a and the thin portion 1d in order to increase the creepage distance between the exposed portion of the heat sink and the mounting surface by the hanging pin or the support pin.
この半導体装置は外部放熱器(図示せず)に取り付け
る際に、取付面5aや取付穴5bが樹脂5により被覆された
放熱板1が電気的に絶縁されるため、絶縁ブッシュや絶
縁シートが不要で、取付作業が容易である。
When this semiconductor device is mounted on an external radiator (not shown), the radiator plate 1 having the mounting surface 5a and the mounting hole 5b covered with the resin 5 is electrically insulated, so that an insulating bush or an insulating sheet is not necessary. It is easy to install.
考案が解決しようとする課題 ところで、第7図半導体装置は樹脂モールド後、樹脂
が硬化過程で収縮するが、取付面5aでは場所によって収
縮の度合が異なり、放熱板1の肉薄部1dでは収縮が著し
く、第8図に示すように、平面6に対し数μ乃至数10μ
の間隙7が形成されるという問題があった。
Problems to be Solved by the Invention By the way, in the semiconductor device shown in FIG. 7, after the resin is molded, the resin shrinks during the curing process, but the degree of shrinkage varies depending on the location on the mounting surface 5a, and the thin portion 1d of the heat sink 1 shrinks. Remarkably, as shown in FIG.
There is a problem that the gap 7 is formed.
このような半導体装置をねじ締めすると、第9図に示
すように、収縮差によって形成された段部5cを支点とし
て半導体装置の取付面5a傾斜状態で固定され、取付面5a
の半導体ペレット2と対向する部分が完全に浮き上った
状態で外部放熱器に取り付けられ、十分な放熱ができず
動作電力が低下するだけでなく、寿命が短くなるという
問題があった。図示例は極端な状態を示しているが、取
付ネジ8の締付け力が、半導体ペレット2部分に及ばな
いため、一見、取付面5sと外部放熱器とが密着している
ようにみえても、熱的な結合が粗となり半導体装置本来
の性能を発揮できない虞があった。
When such a semiconductor device is screw-fastened, as shown in FIG. 9, the mounting surface 5a of the semiconductor device is fixed in an inclined state with the step portion 5c formed by the contraction difference as a fulcrum.
The semiconductor pellet 2 is attached to the external radiator in a state where the portion facing the semiconductor pellet 2 is completely floated, and there is a problem that not only the heat is not sufficiently radiated but the operating power is reduced and the life is shortened. Although the illustrated example shows an extreme state, since the tightening force of the mounting screw 8 does not reach the semiconductor pellet 2 portion, at first glance, even if it seems that the mounting surface 5s and the external radiator are in close contact, There is a possibility that the thermal coupling becomes rough and the original performance of the semiconductor device cannot be exhibited.
課題を解決するための手段 本考案は上記課題の解決を目的として提案されたもの
で、肉厚部の一端側で裏面に対して段差をもって形成し
た肉薄部に透孔又は切欠きを設けかつ透孔又は切欠きと
外端部との間に肉厚部と肉薄部の隣接部分を位置させた
放熱板の肉厚部表面に半導体ペレットをマウントし、こ
の半導体ペレット上の電極と一端を半導体ペレット近傍
に配置したリードとを電気的に接続して、上記透孔又は
切欠き内に貫通する貫通孔を形成しかつ放熱板の裏面側
を表面側に比して薄く設定して放熱板の全面を樹脂して
被覆したことを特徴とする樹脂モールド型半導体装置を
提供する。
Means for Solving the Problems The present invention has been proposed for the purpose of solving the above-mentioned problems, and a through hole or a notch is provided in a thin portion formed with a step on the back surface at one end side of the thick portion and the transparent portion. A semiconductor pellet is mounted on the surface of the thick portion of the heat dissipation plate in which the adjacent portions of the thick portion and the thin portion are located between the hole or notch and the outer end portion, and the electrode and one end of the semiconductor pellet are attached to the semiconductor pellet. The entire surface of the heat sink is formed by electrically connecting the leads arranged in the vicinity to form a through hole penetrating the through hole or notch and setting the back side of the heat sink to be thinner than the front side. Provided is a resin-molded semiconductor device characterized by being coated with a resin.
作用 本考案によれば、放熱板の裏面における肉厚部と肉薄
部の隣接部を樹脂に形成された貫通孔(取付穴)にかか
る位置より外方に位置させたことにより、上記隣接部よ
り外方位置で樹脂の収縮が著しく、内方位置では平坦に
でき、取付穴でのねじ締め圧力が放熱板の肉厚部分の取
付面に及び外部放熱器との熱的結合を確実にできる。
Effect According to the present invention, since the adjacent portion of the thick portion and the thin portion on the back surface of the heat sink is located outside the position of the through hole (mounting hole) formed in the resin, The shrinkage of the resin is remarkable at the outer position, and the resin can be made flat at the inner position, and the screw tightening pressure in the mounting hole ensures the thermal coupling to the mounting surface of the thick portion of the heat dissipation plate and to the external radiator.
実施例 以下に本考案を第1図から説明する。図において第7
図半導体装置と同一符号は同一物を示し説明を省略す
る。即ち、透孔1eを有する放熱板の一側方にリードを配
置し、このリードと反対側の放熱板側壁より放熱板より
肉薄の突片1bを突出させ、放熱板上には半導体ペレット
が固定され、半導体ペレット上の電極とリードとがワイ
ヤ4にて電気的に接続され、半導体ペレット、透孔の内
周を含む放熱板の全面を樹脂で被覆した構造は、図7半
導体装置と同じで、図中相異するのは放熱板1の裏面1c
における肉厚部1aと肉薄部1dの隣接部分1gを樹脂貫通孔
5bにかかる位置より外方に位置させたことにある。
Embodiment The present invention will be described below with reference to FIG. 7th in the figure
The same reference numerals as those of the semiconductor device shown in the figure denote the same components, and a description thereof will be omitted. That is, the lead is arranged on one side of the heat dissipation plate having the through hole 1e, the protruding piece 1b thinner than the heat dissipation plate is projected from the side wall of the heat dissipation plate on the side opposite to the lead, and the semiconductor pellet is fixed on the heat dissipation plate. The electrode on the semiconductor pellet and the lead are electrically connected by the wire 4, and the structure in which the entire surface of the heat dissipation plate including the semiconductor pellet and the inner periphery of the through hole is covered with resin is the same as that of the semiconductor device shown in FIG. , The difference in the figure is the back surface 1c of the heat sink 1.
1g of the thick portion 1a and the thin portion 1d in
It is located outside the position of 5b.
これにより放熱板1の肉厚部1aが第2図に示すように
貫通孔5bにかかり、第3図に示すように樹脂の収縮によ
る間隙7′は貫通孔5bの中間まで形成される。
As a result, the thick portion 1a of the heat radiating plate 1 is applied to the through hole 5b as shown in FIG. 2, and as shown in FIG. 3, the gap 7'caused by the shrinkage of the resin is formed up to the middle of the through hole 5b.
従って樹脂の取付面5aが半導体ペレットマウント位置
と貫通穴5b位置の一部とで面一となり、貫通穴5bでねじ
締めすると取付面5aは外部放熱器に密着し、熱的結合を
密にできる。
Therefore, the resin mounting surface 5a becomes flush with the semiconductor pellet mount position and a part of the through hole 5b position, and when the screw is tightened in the through hole 5b, the mounting surface 5a will be in close contact with the external radiator and the thermal coupling can be made tight. .
尚、本考案は上記実施例にのみ限定されるものではな
く、例えば、第4図に示すように、透孔の代わりに切欠
き1e′を形成した放熱板1を用いてもよい。
The present invention is not limited to the above embodiment, and for example, as shown in FIG. 4, a heat radiating plate 1 having notches 1e 'instead of through holes may be used.
また、第5図に示すように肉厚部1aの一部を一端側に
突出させその端面1a′透孔1eにかかるようにした放熱板
を用いてもよい。
Further, as shown in FIG. 5, a heat radiating plate may be used in which a part of the thick portion 1a is projected to one end side and the end face 1a ′ of the through hole 1e is covered.
さらには第6図に示すように肉厚1aに径大の有底穴1h
を穿設して底部に肉薄部1dとは別の肉薄部1d′を形成
し、この肉薄部1d′に透孔1eを穿設した放熱板を用いて
もよい。
Furthermore, as shown in FIG. 6, a large diameter bottomed hole 1h with a wall thickness 1a
It is also possible to use a heat radiating plate in which a thin portion 1d ′ different from the thin portion 1d is formed in the bottom portion and a through hole 1e is formed in the thin portion 1d ′.
考案の効果 以上のように本考案によれば、取付面の熱的結合が必
要な部分と貫通穴部分とが面一になるため、取付面を外
部放熱器などに密着固定でき、本来の性能が発揮でき信
頼性の高い半導体装置を実現できる。
As described above, according to the present invention, the portion of the mounting surface that needs thermal coupling and the through-hole portion are flush with each other, so that the mounting surface can be closely fixed to an external radiator, etc. And a highly reliable semiconductor device can be realized.
【図面の簡単な説明】[Brief description of drawings]
第1図は本考案の実施例を示す一部断面斜視図,第2図
は第1図半導体装置の側断面図,第3図は第1図半導体
装置の一部断面側面図,第4図乃至第6図は本考案装置
に用いられる放熱板の変形例を示す部分斜視図,第7図
は従来の半導体装置を示す側断面図,第8図及び第9図
は第7図半導体装置の課題を説明する側面図である。 1……放熱板,1a……肉厚部、1c……裏面、1d……肉薄
部、1e……透孔、1e′……切欠き、1f……表面、1g……
肉厚部と肉薄部の隣接部、2……半導体ペレット、3…
…リード、5……樹脂、5a……取付面、5b……貫通孔。
FIG. 1 is a partial sectional perspective view showing an embodiment of the present invention, FIG. 2 is a side sectional view of a semiconductor device shown in FIG. 1, and FIG. 3 is a partial sectional side view of a semiconductor device shown in FIG. FIG. 6 is a partial perspective view showing a modified example of the heat dissipation plate used in the device of the present invention, FIG. 7 is a side sectional view showing a conventional semiconductor device, and FIGS. 8 and 9 are FIG. It is a side view explaining a subject. 1 ... Heat sink, 1a ... Thick part, 1c ... Back surface, 1d ... Thin part, 1e ... Through hole, 1e '... Notch, 1f ... Front surface, 1g ...
Adjacent parts of thick and thin parts, 2 ... Semiconductor pellets, 3 ...
… Lead, 5 …… resin, 5a …… mounting surface, 5b …… through hole.

Claims (1)

    (57)【実用新案登録請求の範囲】(57) [Scope of utility model registration request]
  1. 【請求項1】肉厚部の一端側で裏面に対して段差をもっ
    て形成した肉薄部に透孔又は切欠きを設けかつ透孔又は
    切欠きと外端部との間に肉厚部と肉薄部の隣接部分を位
    置させた放熱板の肉厚部表面に半導体ペレットをマウン
    トし、この半導体ペレット上の電極と一端を半導体ペレ
    ット近傍に配置したリードとを電気的に接続して、上記
    透孔又は切欠き内に貫通する貫通孔を形成しかつ放熱板
    の裏面側を表面側に比して薄く設定して放熱板の全面を
    樹脂にて被覆したことを特徴とする樹脂モールド型半導
    体。
    1. A thin portion formed at one end side of the thick portion with a step on the back surface is provided with a through hole or notch, and the thick portion and the thin portion are provided between the through hole or notch and the outer end portion. The semiconductor pellet is mounted on the surface of the thick portion of the heat dissipation plate where the adjacent portion of is positioned, and the electrode on the semiconductor pellet and one end of the semiconductor pellet are electrically connected to each other to form the through hole or A resin-molded semiconductor, characterized in that a through hole is formed in the notch, the back surface side of the heat sink is set thinner than the front side, and the entire surface of the heat sink is covered with resin.
JP1990087605U 1990-08-21 1990-08-21 Resin mold type semiconductor device Active JP2517954Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990087605U JP2517954Y2 (en) 1990-08-21 1990-08-21 Resin mold type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990087605U JP2517954Y2 (en) 1990-08-21 1990-08-21 Resin mold type semiconductor device

Publications (2)

Publication Number Publication Date
JPH0444155U JPH0444155U (en) 1992-04-15
JP2517954Y2 true JP2517954Y2 (en) 1996-11-20

Family

ID=31820091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990087605U Active JP2517954Y2 (en) 1990-08-21 1990-08-21 Resin mold type semiconductor device

Country Status (1)

Country Link
JP (1) JP2517954Y2 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6472546A (en) * 1987-09-11 1989-03-17 Kansai Nippon Electric Semiconductor device

Also Published As

Publication number Publication date
JPH0444155U (en) 1992-04-15

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