JPH01164074A - 非晶質水素化シリコン光導電膜の製造方法 - Google Patents

非晶質水素化シリコン光導電膜の製造方法

Info

Publication number
JPH01164074A
JPH01164074A JP63233012A JP23301288A JPH01164074A JP H01164074 A JPH01164074 A JP H01164074A JP 63233012 A JP63233012 A JP 63233012A JP 23301288 A JP23301288 A JP 23301288A JP H01164074 A JPH01164074 A JP H01164074A
Authority
JP
Japan
Prior art keywords
film
amorphous silicon
hydrogen concentration
photoconductive
silicon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63233012A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0458192B2 (enrdf_load_stackoverflow
Inventor
Yoshiya Takeda
悦矢 武田
Shinji Fujiwara
慎司 藤原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP63233012A priority Critical patent/JPH01164074A/ja
Publication of JPH01164074A publication Critical patent/JPH01164074A/ja
Publication of JPH0458192B2 publication Critical patent/JPH0458192B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Light Receiving Elements (AREA)
JP63233012A 1988-09-16 1988-09-16 非晶質水素化シリコン光導電膜の製造方法 Granted JPH01164074A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63233012A JPH01164074A (ja) 1988-09-16 1988-09-16 非晶質水素化シリコン光導電膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63233012A JPH01164074A (ja) 1988-09-16 1988-09-16 非晶質水素化シリコン光導電膜の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP57026241A Division JPS58142582A (ja) 1982-02-19 1982-02-19 非晶質水素化シリコン光導電膜

Publications (2)

Publication Number Publication Date
JPH01164074A true JPH01164074A (ja) 1989-06-28
JPH0458192B2 JPH0458192B2 (enrdf_load_stackoverflow) 1992-09-16

Family

ID=16948432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63233012A Granted JPH01164074A (ja) 1988-09-16 1988-09-16 非晶質水素化シリコン光導電膜の製造方法

Country Status (1)

Country Link
JP (1) JPH01164074A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0458192B2 (enrdf_load_stackoverflow) 1992-09-16

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