JPH01161729A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPH01161729A
JPH01161729A JP32036087A JP32036087A JPH01161729A JP H01161729 A JPH01161729 A JP H01161729A JP 32036087 A JP32036087 A JP 32036087A JP 32036087 A JP32036087 A JP 32036087A JP H01161729 A JPH01161729 A JP H01161729A
Authority
JP
Japan
Prior art keywords
region
wiring channel
center
wiring
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32036087A
Other languages
Japanese (ja)
Inventor
Hirosuke Takeshima
竹島 宏祐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC IC Microcomputer Systems Co Ltd
Original Assignee
NEC IC Microcomputer Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC IC Microcomputer Systems Co Ltd filed Critical NEC IC Microcomputer Systems Co Ltd
Priority to JP32036087A priority Critical patent/JPH01161729A/en
Publication of JPH01161729A publication Critical patent/JPH01161729A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To alleviate the complexity of wirings formed at the center of a chip and to easily perform automatic wirings by providing a first wiring channel only region formed in a cross shape at the center, and second wiring channel only region formed in a longitudinal and lateral lattice state on a region except the center. CONSTITUTION:In a semiconductor integrated circuit device of a gate array type in which cell regions 2 laterally regularly arranged with cell transistor group for forming a logic are clearly distinguished from a wiring channel only region used as wirings between the cell regions 2, a first wiring channel only region 4 formed in a cross shape at the center and a second wiring channel only region 5 formed in longitudinal and lateral lattice state except the center are provided. For example, an IC chip 1 formed with bonding pads 3 along the outer periphery is constructed to contain a cross-shaped thick first wiring channel only region 4 formed at the center of the chip 1, and a second wiring channel only region 5 formed longitudinally and laterally except the cross shape of the center.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体集積回路装置に関し、特にゲートアレイ
方式で設計される半導体集積回路装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor integrated circuit device, and particularly to a semiconductor integrated circuit device designed using a gate array method.

〔従来の技術〕[Conventional technology]

従来のゲートアレイ方式による半導体集積回路装置は、
ゲートアレイの下地に標準化された配線チャネル専用領
域があらかじめ設計されている。
A semiconductor integrated circuit device using the conventional gate array method is
A standardized area dedicated to wiring channels is designed in advance under the gate array.

例えば、第2図はかかる従来の一例を示すICチップの
平面図である。
For example, FIG. 2 is a plan view of an IC chip showing an example of such a conventional technique.

第2図に示すように、外周部に沿ってポンディングパッ
ド13を形成したICチップ11は基本セルをアレイ状
に複数個配列したセルアレイ12間に配線チャネル専用
領域15を形成し、ここの中央部からセルアレイ(セル
領域)12間等の配線が行われる。
As shown in FIG. 2, the IC chip 11 with the bonding pads 13 formed along the outer periphery forms a dedicated wiring channel area 15 between the cell arrays 12 in which a plurality of basic cells are arranged in an array. Wiring is performed between the cell arrays (cell regions) 12 and the like.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

一般にゲートアレイの自動レイアウトはチップ中央部か
ら配置および配線が行われるので、チップ中央部におい
て配線が混雑するという問題がある。しかるに、上述し
た従来のゲートアレイ方式の半導体集積回路装置は配線
チャネル専用領域が横方向にしかないため、中央部分の
混雑した配線を緩和するのが容易ではない−6また、年
々ゲート数が増え、大ファンクションブロックも多く用
いられるようになり、縦方向の配線も混雑するようにな
ってきている。従って、従来の半導体集積回路装置にお
いては、配線チャネル数が不足して自動配線ができなく
なったり、人手によるレイアウトを必要として設計期間
が増加してしまうという欠点がある。
Generally, in automatic layout of gate arrays, arrangement and wiring are performed from the center of the chip, so there is a problem that the wiring becomes crowded at the center of the chip. However, in the conventional gate array type semiconductor integrated circuit device mentioned above, the area dedicated to wiring channels is only in the horizontal direction, so it is not easy to alleviate the congestion of wiring in the central part. Large function blocks are also increasingly used, and vertical wiring is also becoming more congested. Therefore, conventional semiconductor integrated circuit devices have the drawbacks that automatic wiring is not possible due to an insufficient number of wiring channels, and that manual layout is required, which increases the design period.

本発明の目的は、チップ中央部に形成される配線の混雑
を緩和すること、および自動配線を実現しやすくするこ
と等の問題点を解決する半導体集積回路装置を提供する
ことにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor integrated circuit device that solves problems such as alleviating congestion of wiring formed in the center of a chip and facilitating automatic wiring.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の半導体集積回路装置は、論理を構成するセルト
ランジスタ群が横方向に規則的に配列されてなるセル領
域と各セル領域間の配線に用いられる配線チャネル専用
領域との区別の明らかなゲートアレイ方式の半導体集積
回路装置において、中央部に十字に形成された第一の配
線チャネル専用領域と、前記中央部以外の領域に縦、横
格子状に形成された第二の配線チャーネル専用領域とを
含んで構成される。
The semiconductor integrated circuit device of the present invention has gates that clearly distinguish between a cell region in which a group of cell transistors constituting a logic are arranged regularly in the horizontal direction and a wiring channel exclusive region used for wiring between each cell region. In an array-type semiconductor integrated circuit device, a first wiring channel exclusive area formed in a cross shape in the center, and a second wiring channel exclusive area formed in a vertical and horizontal lattice shape in an area other than the central area. It consists of:

〔実施例〕〔Example〕

次に、本発明の実施例について図面を参照して説明する
Next, embodiments of the present invention will be described with reference to the drawings.

第1図は本発明の一実施例を示すICチップの平面図で
ある。
FIG. 1 is a plan view of an IC chip showing an embodiment of the present invention.

第1図に示すように、外周部分に沿ってポンディングパ
ッド3を形成したこのICチップ1は縦、横格子状の配
線チャネル専用領域4および5を含む形で構成される。
As shown in FIG. 1, this IC chip 1 has bonding pads 3 formed along its outer periphery and is structured to include wiring channel dedicated regions 4 and 5 in a vertical and horizontal lattice shape.

本実施例において、チップ1の中央部に形成される十字
の太い第一の配線チャネル専用領域4は中央十字部分以
外の縦、横に形成される第二の配線チャネル専用領域5
よりも多くの配線チャネル数をもつ下地が得られる。
In this embodiment, the first wiring channel exclusive area 4 with a thick cross formed in the center of the chip 1 is replaced by the second wiring channel exclusive area 5 formed vertically and horizontally outside the central cross area.
A base with a larger number of wiring channels can be obtained.

従って、チップ1の中央部分から配置及び配線が行われ
チップ中央部分で配線が混雑したとしても、チップ1の
中央部分の配線チャネル専用領域4がそれ以外の配線チ
ャネル専用領域5よりも配線チャネル数が多いため、配
線効率は良くなり、また、縦に配線チャネル専用領域4
および5を形成することにより、今まで配線が困難であ
った縦方向の配線も配線効率が良くなる。かかる構成と
することにより、自動レイアウトが可能になり、設計期
間も短縮される。
Therefore, even if placement and wiring are performed from the central part of the chip 1 and the wiring becomes crowded in the central part of the chip, the wiring channel dedicated area 4 in the central part of the chip 1 has a higher number of wiring channels than the other wiring channel dedicated area 5. Since there are many channels, the wiring efficiency is improved, and the vertical wiring channel dedicated area 4
By forming the lines 5 and 5, the wiring efficiency can be improved even in the vertical direction, which has been difficult to wire up until now. With this configuration, automatic layout becomes possible and the design period is shortened.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明のゲートアレイ方式の半導
体集積回路装置は中央部および中央部以外の領域とに縦
、横格子状に配線チャネル専用領域を形成することによ
り、自動レイアウトによる配線処理を効率化し、チップ
に対する配線の完全自動化を実現できるという効果があ
る。
As explained above, the gate array type semiconductor integrated circuit device of the present invention can perform wiring processing by automatic layout by forming dedicated areas for wiring channels in a vertical and horizontal lattice shape in the central area and areas other than the central area. This has the effect of increasing efficiency and realizing complete automation of wiring for chips.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示すICチップの平面図、
第2図は従来の一例を示すICチップの平面図である。 1・・・ICチップ、2・・・セル領域、3・・・ポン
デイグパッド、4・・・第一の配線チャネル専用領域、
5・・・第二の配線チャネル専用領域。
FIG. 1 is a plan view of an IC chip showing an embodiment of the present invention;
FIG. 2 is a plan view of an IC chip showing a conventional example. DESCRIPTION OF SYMBOLS 1... IC chip, 2... Cell area, 3... Ponding pad, 4... First wiring channel exclusive area,
5...Second wiring channel exclusive area.

Claims (1)

【特許請求の範囲】[Claims]  論理を構成するセルトランジスタ群が横方向に規則的
に配列されてなるセル領域と各セル領域間の配線に用い
られる配線チャネル専用領域との区別の明らかなゲート
アレイ方式の半導体集積回路装置において、中央部に十
字に形成された第一の配線チャネル専用領域と、前記中
央部以外の領域に縦、横格子状に形成された第二の配線
チャネル専用領域とを有することを特徴とする半導体集
積回路装置。
In a gate array type semiconductor integrated circuit device in which a cell region in which a group of cell transistors constituting a logic is arranged regularly in the horizontal direction and a region dedicated to a wiring channel used for wiring between each cell region are clearly distinguished, A semiconductor integrated circuit comprising: a first dedicated wiring channel region formed in a cross shape in a central portion; and a second dedicated wiring channel region formed in a vertical and horizontal lattice pattern in a region other than the central portion. circuit device.
JP32036087A 1987-12-17 1987-12-17 Semiconductor integrated circuit device Pending JPH01161729A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32036087A JPH01161729A (en) 1987-12-17 1987-12-17 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32036087A JPH01161729A (en) 1987-12-17 1987-12-17 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPH01161729A true JPH01161729A (en) 1989-06-26

Family

ID=18120606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32036087A Pending JPH01161729A (en) 1987-12-17 1987-12-17 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPH01161729A (en)

Similar Documents

Publication Publication Date Title
JPH02177345A (en) Semiconductor integrated circuit device
JP3466064B2 (en) Semiconductor integrated circuit device
JPH01161729A (en) Semiconductor integrated circuit device
US5206529A (en) Semiconductor integrated circuit device
JPS62194640A (en) Semiconductor integrated circuit using bump mounting
USH512H (en) Automated universal array
JPS6276735A (en) Semiconductor integrated circuit device
JPS623584B2 (en)
JPH0329182B2 (en)
JP2679034B2 (en) Semiconductor integrated device
JPS62183140A (en) Semiconductor integrated circuit device
JP2702156B2 (en) Semiconductor integrated circuit device
JPS63186445A (en) Semiconductor integrated circuit device
JPS6329545A (en) Semiconductor integrated circuit device
JPH0563165A (en) Semiconductor device
JPS5935448A (en) Master-slice integrated circuit device
JPH02201958A (en) Gate array type semiconductor integrated circuit device
JPS61107741A (en) Semiconductor integrated circuit device
JP2004103751A (en) Semiconductor device
JPH01152642A (en) Semiconductor integrated circuit
JPH0374873A (en) Semiconductor integrated circuit device
JPS63273332A (en) Manufacture of semiconductor integrated circuit device
JPS6399545A (en) Integrated circuit using building block system
JPS60175438A (en) Semiconductor integrated circuit device
JPS61294833A (en) Semiconductor integrated circuit