JPH0116012B2 - - Google Patents

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Publication number
JPH0116012B2
JPH0116012B2 JP24274486A JP24274486A JPH0116012B2 JP H0116012 B2 JPH0116012 B2 JP H0116012B2 JP 24274486 A JP24274486 A JP 24274486A JP 24274486 A JP24274486 A JP 24274486A JP H0116012 B2 JPH0116012 B2 JP H0116012B2
Authority
JP
Japan
Prior art keywords
protective film
wafer
moving plate
protruding blade
movable plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP24274486A
Other languages
Japanese (ja)
Other versions
JPS6396907A (en
Inventor
Ryoji Wakabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP61242744A priority Critical patent/JPS6396907A/en
Publication of JPS6396907A publication Critical patent/JPS6396907A/en
Publication of JPH0116012B2 publication Critical patent/JPH0116012B2/ja
Granted legal-status Critical Current

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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

【発明の詳細な説明】 産業上の利用分野 本発明は半導体ウエーハの保護膜の自動打抜き
装置に係るものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an automatic punching device for a protective film of a semiconductor wafer.

従来の技術 半導体ウエーハ(0.2〜0.25mm厚)はそのまま
では脆いので取扱いの際に損壊しないよう半導体
ウエーハの底面に台紙、頂面にビニール等の保護
膜を付着させる。通常半導体ウエーハよりも大き
な保護膜を半導体ウエーハの頂面に置いて半導体
ウエーハの周縁に沿つて保護膜を切り抜いて半導
体ウエーハに保護膜を付着させている。従来この
半導体ウエーハの周縁に沿つての保護膜の切り抜
きはナイフ等を使用して手作業により行なわれて
いた。手作業によつたのは半導体ウエーハの保護
膜を切出し位置に精確に設定することの困難さ
と、切出し工具による半導体ウエーハへの衝撃が
半導体ウエーハの破壊を招くからである。
Prior Art Semiconductor wafers (0.2 to 0.25 mm thick) are fragile as they are, so a mount is attached to the bottom of the semiconductor wafer and a protective film such as vinyl is attached to the top to prevent damage during handling. Usually, a protective film larger than the semiconductor wafer is placed on the top surface of the semiconductor wafer, and the protective film is cut out along the periphery of the semiconductor wafer to attach the protective film to the semiconductor wafer. Conventionally, the protective film was cut out along the periphery of the semiconductor wafer by hand using a knife or the like. The reason for using manual work is that it is difficult to accurately set the protective film of the semiconductor wafer at the cutting position, and that the impact on the semiconductor wafer caused by the cutting tool may lead to destruction of the semiconductor wafer.

発明が解決しようとする問題点 本発明の目的は、半導体ウエーハの保護膜を切
出し位置に精確に設定することの困難を回避し、
同時に切出し工具による半導体ウエーハへの衝撃
を回避して半導体ウエーハの保護膜を自動的に打
抜き、効率よく半導体ウエーハに保護膜を被せる
装置を提供することにある。
Problems to be Solved by the Invention An object of the present invention is to avoid the difficulty of accurately setting a protective film of a semiconductor wafer at a cutting position;
It is an object of the present invention to provide an apparatus for automatically punching out a protective film of a semiconductor wafer while avoiding impact on the semiconductor wafer by a cutting tool and efficiently covering the semiconductor wafer with the protective film.

問題点を解決するための手段と作用 上記の目的は本発明に従つて、保護膜を付着さ
せる半導体ウエーハの輪郭と同形でウエーハより
大きめの空間を限定する突出刃を有する移動板を
用意する。この移動板の空間にウエーハを収容し
ウエーハの上面を突出刃から僅かに高いレベルに
設定する。この状態で保護膜を被せると、保護膜
はウエーハの上面に容易に付着する。次にウエー
ハ上面を突出刃から僅かに低いレベルに設定する
と保護膜はウエーハの周縁から突出刃へと持上が
る。この状態で平らな面を使用して上から保護膜
を押圧すると、突出刃よりも低い位置にあるウエ
ーハには衝撃を与えることなく保護膜をウエーハ
の輪郭に沿つて切抜くことができる。
Means and Effects for Solving the Problems According to the present invention, the above object provides a movable plate having a protruding blade that defines a space having the same shape as the outline of a semiconductor wafer to which a protective film is to be attached and which is larger than the wafer. A wafer is accommodated in the space of this moving plate, and the upper surface of the wafer is set at a level slightly higher than the protruding blade. If a protective film is applied in this state, the protective film will easily adhere to the top surface of the wafer. Next, when the upper surface of the wafer is set at a level slightly lower than the protruding edge, the protective film is lifted from the periphery of the wafer to the protruding edge. In this state, if the protective film is pressed from above using a flat surface, the protective film can be cut out along the contour of the wafer without applying any impact to the wafer located at a position lower than the protruding blade.

この目的を達成するため本発明に従つて半導体
ウエーハの保護膜の自動打抜き装置は、保護膜を
付着させる半導体ウエーハの輪郭と同形でウエー
ハより大きめの空間を限定する突出刃を有する移
動板;半導体ウエーハの上面を前記の突出刃より
も僅かに低い位置と僅かに高い位置との間で上下
させるウエーハ昇降手段;前記の移動板を基台面
上で間欠的に移動させる移動板駆動装置; 前記の基台面上の移動板の上方に帯状の保護膜
を駆動する保護膜駆動装置; 前記の移動板が一時停止した位置で帯状保護膜
を前記の移動板の突出刃に押しつける押圧装置;
及び 帯状保護膜の送りと移動板の間欠移動とを同期
させ、移動板の停止と帯状薄膜の突出刃への押圧
とウエーハの下降とを同期させるよう前記の移動
板駆動装置と保護膜駆動装置と押圧装置とウエー
ハ昇降手段とを制御する制御装置を備えている。
In order to achieve this object, an automatic punching device for a protective film of a semiconductor wafer according to the present invention comprises: a moving plate having a protruding blade defining a space larger than the wafer and having the same shape as the contour of the semiconductor wafer to which the protective film is attached; Wafer lifting means for raising and lowering the upper surface of the wafer between a slightly lower position and a slightly higher position than the protruding blade; a moving plate driving device for intermittently moving the moving plate on the base surface; a protective film driving device that drives a strip-shaped protective film above the movable plate on the base surface; a pressing device that presses the strip-shaped protective film against the protruding blade of the movable plate at the position where the movable plate is temporarily stopped;
and the aforementioned moving plate driving device and protective film driving device so as to synchronize the feeding of the strip-shaped protective film and the intermittent movement of the moving plate, and to synchronize the stop of the moving plate, the pressing of the strip-shaped thin film against the protruding blade, and the lowering of the wafer. A control device is provided to control the pressing device and the wafer lifting means.

本発明の実施例を以下に添付図面を参照して詳
細に説明する。
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

実施例 第1ないし第3図を参照して第1の実施例を説
明する。
Embodiment A first embodiment will be described with reference to FIGS. 1 to 3.

第1図において、は移動板、2は突出刃、3
はこの突出刃が限定する半導体ウエーハの輪郭と
同形で、ウエーハより大きめの空間である。第2
図は第1図の移動板の断面を示し、Wは突出刃2
の限定空間に収容した半導体ウエーハ、17はシ
リンダ、18はピストンでウエハの昇降手段を構
成する。16は帯状保護膜を示す。突出刃2の先
端が両方から刃をつけているのは、保護膜を反覆
して打抜いていると片刃の場合は間もなく刃が内
側へ曲がつてきて保護膜の打抜きや、ウエーハの
出し入れに支障をきたすことになるからである。
In Fig. 1, 1 is a moving plate, 2 is a protruding blade, and 3 is a movable plate.
is a space that has the same shape as the outline of the semiconductor wafer defined by this protruding blade and is larger than the wafer. Second
The figure shows a cross section of the movable plate in Fig. 1, and W is the protruding blade 2.
A semiconductor wafer is housed in a limited space, a cylinder 17 and a piston 18 constitute means for lifting and lowering the wafer. 16 indicates a belt-shaped protective film. The reason why the tip of the protruding blade 2 has blades on both sides is because if the protective film is repeatedly punched, the single-edged blade will soon bend inward, making it easy to punch out the protective film and insert and remove wafers. This is because it will cause problems.

第3図を参照する。は昇降台、6は基台、7
は移動板を基台面上で間欠的に移動させる移動
板駆動装置であつて、シリンダとこのシリンダか
らのび移動板の縁面へ固定されたピストンロツ
ドとから成る。8はシリンダであり、9はそのシ
リンダからのびるピストンであつて移動板が一時
停止した位置で帯状保護膜16を移動板の突出刃
2に押しつける押圧装置を構成している。10,
11は帯状保護膜を巻いているローラで、ローラ
10は保護膜を送り出す供給ロールであり、ロー
ラ15は打抜いた後の保護膜を取込む回収ローラ
である。12,13はウエーハ保護膜16を圧着
するガイドローラである。回収ローラ11はピニ
オン15を有しこのピニオンは昇降台5の上昇位
置でラツク14と係合し、このラツク14は移動
板駆動装置7の動作と同期して回収ローラを回動
させて帯状保護膜16の打抜き部分を回収しガイ
ドローラ12,13の間に新しい保護膜を配置す
る。
See Figure 3. 5 is a lifting platform, 6 is a base, 7
is a moving plate driving device that moves the moving plate 1 intermittently on the base surface, and is composed of a cylinder and a piston rod extending from the cylinder and fixed to the edge surface of the moving plate 1 . 8 is a cylinder, and 9 is a piston extending from the cylinder, which constitutes a pressing device that presses the band-shaped protective film 16 against the protruding blade 2 of the movable plate at the position where the movable plate is temporarily stopped. 10,
Reference numeral 11 denotes a roller around which a band-shaped protective film is wound.Roller 10 is a supply roll that sends out the protective film, and roller 15 is a collection roller that takes in the protective film after punching. Guide rollers 12 and 13 press the wafer protective film 16. The collecting roller 11 has a pinion 15 which engages with a rack 14 in the raised position of the lifting platform 5, and this rack 14 rotates the collecting roller in synchronization with the operation of the movable plate drive 7 to remove the strip protection. The punched portion of the membrane 16 is collected and a new protective membrane is placed between the guide rollers 12 and 13.

動作を説明する。第3図の移動板の実線の位
置で半導体ウエーハを移動板の突出刃2の限定空
間に落ち込む。このとき半導体ウエーハWの上面
は突出刃2よりも僅かに低くなつている。次に上
昇位置にある昇降台のガイドロール12,13
の直下に移動板1を移動させるようシリンダ7に
空気を送つてそのロツドをシリンダ7に引込む。
このとき移動板1はウエーハ昇降手段17,18
の直上にある。シリンダ17に空気を送つてピス
トン18によりウエーハWを突出刃よりも僅かに
高く押し上げる。昇降台を下降させて保護膜1
6を突出刃2とその中のウエーハWの上からかぶ
せる(第2A図)。
Explain the operation. At the position indicated by the solid line on the movable plate 1 in FIG. 3, the semiconductor wafer is dropped into the limited space of the protruding blade 2 of the movable plate. At this time, the upper surface of the semiconductor wafer W is slightly lower than the protruding blade 2. Next, the guide rolls 12 and 13 of the lifting platform 5 in the raised position
Air is sent to the cylinder 7 to move the movable plate 1 directly below the rod, and the rod is drawn into the cylinder 7.
At this time, the moving plate 1 is moved to the wafer lifting means 17, 18.
It is directly above the. Air is sent to the cylinder 17 and the piston 18 pushes up the wafer W slightly higher than the protruding blade. The protective film 1 is removed by lowering the lifting platform 5 .
6 over the protruding blade 2 and the wafer W therein (FIG. 2A).

次にシリンダ17に空気を送り、ピストン18
を下降させ、ウエーハWの上面が突出刃2よりも
僅かに低いレベルへウエーハWを下降させる(第
2B図)。
Next, air is sent to the cylinder 17, and the piston 18
is lowered, and the wafer W is lowered to a level where the upper surface of the wafer W is slightly lower than the protruding blade 2 (FIG. 2B).

シリンダ8に空気を送り、ピストンを下降させ
て保護膜16を突出刃2に押し付けてウエーハの
周囲に沿つて保護膜を切断し、昇降台を上昇さ
せる。この状態でラツク14とピニオン15とは
係合する。シリンダ7に空気を送つてロツドをシ
リンダ7から繰り出して移動板を前方の休止端
まで押出す。これと同時にラツク14もシリンダ
7のロツドとは逆方向に動いて回収ロール11を
時計方向に回転させ、打抜いた膜部分を回収ロー
ラ11へ巻取る。保護膜を付着したウエーハを取
除き、次に保護膜を付着しようとするウエーハを
突出刃の中へ落し込む。以後は上述のプロセスを
繰返す。
Air is sent to the cylinder 8, the piston is lowered, the protective film 16 is pressed against the protruding blade 2, the protective film is cut along the periphery of the wafer, and the lifting platform 5 is raised. In this state, the rack 14 and pinion 15 are engaged. Air is sent to the cylinder 7, the rod is let out from the cylinder 7, and the movable plate 1 is pushed out to the front end of rest. At the same time, the rack 14 also moves in the opposite direction to the rod of the cylinder 7, rotates the collection roll 11 clockwise, and winds up the punched film portion onto the collection roller 11. The wafer to which the protective film is attached is removed, and then the wafer to which the protective film is to be attached is dropped into the protruding blade. Thereafter, repeat the above process.

第4図は第2の実施例を示す。第1の実施例と
共通の構成要素には同じ参照番号と付し、その説
明は省略する。
FIG. 4 shows a second embodiment. Components common to those in the first embodiment are given the same reference numerals, and their explanations will be omitted.

第1の実施例との相違は、第1の実施例は半導
体ウエーハを1個づゝ被膜していくのに対して第
2の実施例は半導体ウエーハを連続的に被膜して
いくことにある。このため連続処理しようとする
数の半導体ウエーハと同数の移動板を一直線上
につき合わせて配置するだけの長さの基台6を備
え、この基台6の一端にシリンダ7とピストンと
を配置し、ピストンの衝程を移動板の長さに等し
くしている。一線上に列んだ移動板はピストンの
往復動に応じて保護膜を打抜き付着させたウエー
ハを運ぶ移動板をガイドローラ13の外へ押し出
し、ピストン9の直下に保護膜をかぶせた移動板
を設定する。
The difference from the first embodiment is that in the first embodiment, semiconductor wafers are coated one by one, whereas in the second embodiment, semiconductor wafers are coated continuously. . For this purpose, a base 6 is provided that is long enough to arrange the same number of movable plates 1 as the number of semiconductor wafers to be continuously processed in a straight line, and a cylinder 7 and a piston are placed at one end of this base 6. The stroke of the piston is made equal to the length of the moving plate. The movable plates arranged in a line push out the movable plate carrying the wafer on which the protective film has been punched and adhered, out of the guide roller 13 in response to the reciprocating motion of the piston, and move the movable plate covered with the protective film directly below the piston 9. Set.

第4図で7b,8b,17bはそれぞれシリン
ダ7,8,17への空気供給を制御する電磁弁で
あり、19はこれらの電磁弁の切替動作を制御す
るカム機構である。動作を説明する。加圧空気は
電磁弁7bの下側ポートからシリンダ7へ送ら
れ、このシリンダのピストンはシリンダ7から繰
り出されて移動板1をその長さに相当する距離だ
け送り出す。移動板1はピストン9の直下、ピス
トン18の直上まで進み、停止する。次に加圧空
気は電磁弁17bの下側ポートからシリンダ17
に送られてピストン18を繰出してウエーハWの
上面と保護膜16とを接着させる(第2A図)。
次にカム19は電磁弁17bを付勢して流路を切
替え、加圧空気は電磁弁17の上側ポートからシ
リンダ17へ加えられてピストン18を繰込み、
ウエーハWの上面を突出刃2よりも僅かに下げる
(第2B図)。次に、加圧空気は電磁弁8bの下側
ポートからシリンダ8に空気を送りピストン9を
繰り出して、突出刃2の周りで保護膜を打抜く。
カム19は電磁弁8bのスイツチを閉じて通路を
切替え、加圧空気は電磁弁8bの上側ポートから
シリンダ8へ送られ、ピストン9を移動板1から
離す。カム19は電磁弁7bのスイツチを閉じ、
流路を切替えて上側ポートから加圧空気をシリン
ダ7へ送り、ピストンを繰込む。その後に生じた
空間へ次の移動板を設定する。以後このプロセ
スを繰返す。
In FIG. 4, 7b, 8b, and 17b are electromagnetic valves that control the air supply to the cylinders 7, 8, and 17, respectively, and 19 is a cam mechanism that controls the switching operation of these electromagnetic valves. Explain the operation. Pressurized air is sent from the lower port of the solenoid valve 7b to the cylinder 7, and the piston of this cylinder is paid out from the cylinder 7 to send the movable plate 1 a distance corresponding to its length. The moving plate 1 advances to a position directly below the piston 9 and immediately above the piston 18, and then stops. Next, pressurized air is supplied to the cylinder 17 from the lower port of the solenoid valve 17b.
The piston 18 is sent out to bond the upper surface of the wafer W and the protective film 16 (FIG. 2A).
Next, the cam 19 energizes the solenoid valve 17b to switch the flow path, and pressurized air is applied from the upper port of the solenoid valve 17 to the cylinder 17 to retract the piston 18.
The upper surface of the wafer W is slightly lowered than the protruding blade 2 (FIG. 2B). Next, the pressurized air is sent to the cylinder 8 from the lower port of the solenoid valve 8b to advance the piston 9 and punch out the protective film around the protruding blade 2.
The cam 19 closes the switch of the solenoid valve 8b to change the passage, and pressurized air is sent from the upper port of the solenoid valve 8b to the cylinder 8 to move the piston 9 away from the moving plate 1. The cam 19 closes the switch of the solenoid valve 7b,
Switch the flow path and send pressurized air from the upper port to the cylinder 7 to retract the piston. The next moving plate 1 is then set in the space created. Repeat this process thereafter.

ウエーハ昇降手段としてはシリンダとピストン
を使用したが、移動板の底を閉じて中央に小さい
空気の噴出口を設け、下から加圧空気を送つてウ
エーハWを突出刃2内の空間で上下動させるよう
にしてもよい。
A cylinder and a piston were used to raise and lower the wafer, but by closing the bottom of the movable plate and providing a small air outlet in the center, pressurized air is sent from below to move the wafer W up and down in the space inside the protruding blade 2. You may also do so.

発明の効果 本発明によりウエーハに保護膜を付着する際の
ウエーハの位置決めは極めて容易となり、自動打
抜き装置を現実的価格で実現することができ、効
率よくウエーハに保護膜を接着することができ
る。
Effects of the Invention According to the present invention, positioning of the wafer when attaching a protective film to the wafer becomes extremely easy, an automatic punching device can be realized at a practical cost, and the protective film can be efficiently adhered to the wafer.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は移動板の斜視図である。第2図は移動
板とウエーハ昇降手段との作動関係を示す図で、
第2A図はウエーハを高いレベルに移して保護膜
を付着させている状態を示し、第2B図はウエー
ハを低いレベルに移して保護膜を打抜く用意がで
きた状態を示す。第3図は本発明の第1の実施例
を示す略図である。第4図は本発明の第2の実施
例を示す略図である。 図中:1…移動板、2…突出刃、3…突出刃が
限定する空間、5…昇降台、6…基台、7,8,
17…シリンダ、9,18…ピストン、10…供
給ローラ、11…回収ローラ、12,13…ガイ
ドローラ、14…ラツク、15…ピニオン、16
…保護膜、19…カム、7b,8b,17b…電
磁弁。
FIG. 1 is a perspective view of the moving plate. FIG. 2 is a diagram showing the operational relationship between the moving plate and the wafer lifting means.
FIG. 2A shows the wafer moved to a higher level to deposit the overcoat, and FIG. 2B shows the wafer moved to a lower level ready to punch out the overcoat. FIG. 3 is a schematic diagram showing a first embodiment of the invention. FIG. 4 is a schematic diagram showing a second embodiment of the invention. In the diagram: 1... moving plate, 2... protruding blade, 3... space limited by the protruding blade, 5... lifting platform, 6... base, 7, 8,
17... Cylinder, 9, 18... Piston, 10... Supply roller, 11... Collection roller, 12, 13... Guide roller, 14... Rack, 15... Pinion, 16
...Protective film, 19...Cam, 7b, 8b, 17b...Solenoid valve.

Claims (1)

【特許請求の範囲】 1 保護膜を付着させる半導体ウエーハの輪郭と
同形でウエーハより大きめの空間を限定する突出
刃を有する移動板; 半導体ウエーハの上面を前記の突出刃よりも僅
かに低い位置と僅かに高い位置との間で上下させ
るウエーハ昇降手段; 前記の移動板を基台面上で間欠的に移動させる
移動板駆動装置; 前記の基台面上の移動板の上方に帯状の保護膜
を駆動する保護膜駆動装置; 前記の移動板が一時停止した位置で帯状保護膜
を前記の移動板の突出刃に押しつける押圧装置;
及び 帯状保護膜の送りと移動板の間欠移動とを同期
させ、移動板の停止と帯状薄膜の突出刃への押圧
とウエーハの下降とを同期させるよう前記の移動
板駆動装置と保護膜駆動装置と押圧装置とウエー
ハ昇降手段とを制御する制御装置 を備えたことを特徴とする半導体ウエーハの保護
膜の自動打抜き装置。
[Claims] 1. A movable plate having a protruding blade that has the same shape as the outline of the semiconductor wafer to which a protective film is to be attached and that defines a space larger than the wafer; a movable plate that has an upper surface of the semiconductor wafer at a position slightly lower than the protruding blade; A wafer lifting device that moves the wafer up and down from a slightly higher position; A moving plate driving device that moves the moving plate intermittently on the base surface; Driving a band-shaped protective film above the moving plate on the base surface. a protective film drive device that presses the band-shaped protective film against the protruding blade of the movable plate at the position where the movable plate temporarily stops;
and the aforementioned moving plate driving device and protective film driving device so as to synchronize the feeding of the strip-shaped protective film and the intermittent movement of the moving plate, and to synchronize the stop of the moving plate, the pressing of the strip-shaped thin film against the protruding blade, and the lowering of the wafer. An automatic punching device for a protective film of a semiconductor wafer, comprising a control device for controlling a pressing device and a wafer lifting means.
JP61242744A 1986-10-13 1986-10-13 Automatic punching machine for protective film at semiconductor wafer Granted JPS6396907A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61242744A JPS6396907A (en) 1986-10-13 1986-10-13 Automatic punching machine for protective film at semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61242744A JPS6396907A (en) 1986-10-13 1986-10-13 Automatic punching machine for protective film at semiconductor wafer

Publications (2)

Publication Number Publication Date
JPS6396907A JPS6396907A (en) 1988-04-27
JPH0116012B2 true JPH0116012B2 (en) 1989-03-22

Family

ID=17093611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61242744A Granted JPS6396907A (en) 1986-10-13 1986-10-13 Automatic punching machine for protective film at semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS6396907A (en)

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JP2010080838A (en) * 2008-09-29 2010-04-08 Lintec Corp Sheet pasting device and sheet pasting method

Families Citing this family (8)

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Publication number Priority date Publication date Assignee Title
US6852241B2 (en) 2001-08-14 2005-02-08 Lexmark International, Inc. Method for making ink jet printheads
JP4840333B2 (en) * 2007-11-12 2011-12-21 株式会社デンソー Tape sticking device and tape sticking method
JP2009212173A (en) * 2008-03-03 2009-09-17 Csun Mfg Ltd Wafer film cutting apparatus
KR100918485B1 (en) 2009-03-10 2009-09-24 김중섭 Tape attaching unit
JP5126986B2 (en) * 2009-08-01 2013-01-23 昌己 浦 Sheet pasting device
JP5011364B2 (en) * 2009-10-20 2012-08-29 志聖工業股▲ふん▼有限公司 Wafer laminating dicing saw
US8069893B2 (en) * 2010-02-03 2011-12-06 Lai Chin-Sen Cutting mechanism for dry film laminator
CN107200301B (en) * 2017-05-23 2019-02-12 中国科学院微电子研究所 A kind of pad pasting alignment device of combination of MEMS wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010080838A (en) * 2008-09-29 2010-04-08 Lintec Corp Sheet pasting device and sheet pasting method

Also Published As

Publication number Publication date
JPS6396907A (en) 1988-04-27

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