JPH01159910A - Conductive material - Google Patents
Conductive materialInfo
- Publication number
- JPH01159910A JPH01159910A JP31805687A JP31805687A JPH01159910A JP H01159910 A JPH01159910 A JP H01159910A JP 31805687 A JP31805687 A JP 31805687A JP 31805687 A JP31805687 A JP 31805687A JP H01159910 A JPH01159910 A JP H01159910A
- Authority
- JP
- Japan
- Prior art keywords
- tin
- acid
- organic acid
- conductive material
- bicarbonate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 title claims abstract description 25
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 33
- 150000007524 organic acids Chemical class 0.000 claims abstract description 28
- 238000000576 coating method Methods 0.000 abstract description 19
- 239000011248 coating agent Substances 0.000 abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 13
- 239000002253 acid Substances 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 10
- -1 salt bicarbonate Chemical class 0.000 abstract description 7
- 150000003606 tin compounds Chemical class 0.000 abstract description 7
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 abstract description 5
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 5
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 abstract description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract description 4
- 229910000013 Ammonium bicarbonate Inorganic materials 0.000 abstract description 4
- 150000001447 alkali salts Chemical class 0.000 abstract description 4
- 235000012538 ammonium bicarbonate Nutrition 0.000 abstract description 4
- 239000001099 ammonium carbonate Substances 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 4
- 238000004140 cleaning Methods 0.000 abstract description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical compound OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 abstract 1
- 239000012295 chemical reaction liquid Substances 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- OBBXFSIWZVFYJR-UHFFFAOYSA-L tin(2+);sulfate Chemical compound [Sn+2].[O-]S([O-])(=O)=O OBBXFSIWZVFYJR-UHFFFAOYSA-L 0.000 abstract 1
- 229910000375 tin(II) sulfate Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 28
- 239000000499 gel Substances 0.000 description 20
- 239000007864 aqueous solution Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 16
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 229910052787 antimony Inorganic materials 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 7
- 150000003839 salts Chemical class 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- NGCDGPPKVSZGRR-UHFFFAOYSA-J 1,4,6,9-tetraoxa-5-stannaspiro[4.4]nonane-2,3,7,8-tetrone Chemical compound [Sn+4].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O NGCDGPPKVSZGRR-UHFFFAOYSA-J 0.000 description 5
- 235000005985 organic acids Nutrition 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 229910001887 tin oxide Inorganic materials 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 4
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 238000005755 formation reaction Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 235000006408 oxalic acid Nutrition 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- JXTHNDFMNIQAHM-UHFFFAOYSA-N dichloroacetic acid Chemical compound OC(=O)C(Cl)Cl JXTHNDFMNIQAHM-UHFFFAOYSA-N 0.000 description 2
- 239000000174 gluconic acid Substances 0.000 description 2
- 235000012208 gluconic acid Nutrition 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SKEZDZQGPKHHSH-UHFFFAOYSA-J 2-hydroxypropanoate;tin(4+) Chemical compound [Sn+4].CC(O)C([O-])=O.CC(O)C([O-])=O.CC(O)C([O-])=O.CC(O)C([O-])=O SKEZDZQGPKHHSH-UHFFFAOYSA-J 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-M D-gluconate Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O RGHNJXZEOKUKBD-SQOUGZDYSA-M 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- AEMRFAOFKBGASW-UHFFFAOYSA-M Glycolate Chemical compound OCC([O-])=O AEMRFAOFKBGASW-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- JVTAAEKCZFNVCJ-UHFFFAOYSA-M Lactate Chemical compound CC(O)C([O-])=O JVTAAEKCZFNVCJ-UHFFFAOYSA-M 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 108010009736 Protein Hydrolysates Proteins 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001463 antimony compounds Chemical class 0.000 description 1
- DAMJCWMGELCIMI-UHFFFAOYSA-N benzyl n-(2-oxopyrrolidin-3-yl)carbamate Chemical compound C=1C=CC=CC=1COC(=O)NC1CCNC1=O DAMJCWMGELCIMI-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229960005215 dichloroacetic acid Drugs 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- IOUCSUBTZWXKTA-UHFFFAOYSA-N dipotassium;dioxido(oxo)tin Chemical compound [K+].[K+].[O-][Sn]([O-])=O IOUCSUBTZWXKTA-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229940050410 gluconate Drugs 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000012770 industrial material Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- GEVPUGOOGXGPIO-UHFFFAOYSA-N oxalic acid;dihydrate Chemical compound O.O.OC(=O)C(O)=O GEVPUGOOGXGPIO-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- 239000011736 potassium bicarbonate Substances 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229940071182 stannate Drugs 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Paints Or Removers (AREA)
- Conductive Materials (AREA)
Abstract
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は新規な導電性材料に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to novel electrically conductive materials.
電気伝導性及び光透過性の特徴を併せ持つ導電性材料か
らなる透明導電膜は、電気光学素子の目覚ましい発展と
相まって、近年飛躍的に需要が伸びつつある工業材料で
ある。Transparent conductive films made of conductive materials that have both electrical conductivity and optical transparency are industrial materials whose demand has been rapidly increasing in recent years, coupled with the remarkable development of electro-optical devices.
その中で、酸化スズ系導電性材料からなる透明導電膜は
、物理・化学的な耐久性に優れ、また、酸化インジウム
系のものに比べて安価であることから広く使用されてい
る。Among these, transparent conductive films made of tin oxide-based conductive materials are widely used because they have excellent physical and chemical durability and are cheaper than indium oxide-based materials.
(従来の技術)
この様な導電性材料からなる透明導電膜は、通常気相法
、例えばCVD法、真空蒸着法、反応性イオンブレーテ
ィング法、スパッタリング法等の膜形成法により、基板
上に膜状に被覆され、実用に供せられている。(Prior Art) A transparent conductive film made of such a conductive material is usually deposited on a substrate by a film forming method such as a vapor phase method, for example, a CVD method, a vacuum evaporation method, a reactive ion blasting method, or a sputtering method. It is coated in a film and is used for practical purposes.
しかし、これらの方法はいずれも装置が複雑であり、ま
た膜形成速度が遅いという欠点を有するばかりでなく、
膜形成が小面積であり、大面積の膜を得ることができな
いことで問題がある。However, all of these methods not only have the drawbacks of complicated equipment and slow film formation speed, but also
There is a problem in that the film is formed on a small area and a film with a large area cannot be obtained.
これに対し、液状の原料を基板にコーティングして膜を
形成する所謂塗布法は、比較的単純なプロセスにより大
面積の薄膜が得られるという利点があり、工業的に有望
な方法である。On the other hand, the so-called coating method, in which a film is formed by coating a substrate with a liquid raw material, has the advantage that a large-area thin film can be obtained through a relatively simple process, and is an industrially promising method.
酸化スズ系の材料に於てもこの塗布法は幅広く検討され
ており、多種多様の液状スズ系化合物の熱分解挙動が研
究されている。This coating method has been extensively studied for tin oxide based materials as well, and the thermal decomposition behavior of a wide variety of liquid tin based compounds has been studied.
主なものとしては、■無機あるいは有機酸のスズ塩水溶
液、■常温で液体である有機スズ化合物、■スズアルコ
キシド及びその加水分解物等があげられるが、いずれも
コーティングに用い之導電性材料としては欠点があり、
実用化されるには至っていない。The main ones include: - aqueous solutions of tin salts of inorganic or organic acids, - organic tin compounds that are liquid at room temperature, and - tin alkoxides and their hydrolysates, all of which are used in coatings and as conductive materials. has its drawbacks,
It has not yet been put into practical use.
即ち■の材料では、基板へのコーテイング後の乾燥工程
において、該塩の結晶が基板上に晶析しやすく、均一な
膜が得られにくい。That is, with the material (2), the salt crystals tend to crystallize on the substrate in the drying process after coating the substrate, making it difficult to obtain a uniform film.
また■の材料では、乾燥薄膜が得られないために膜厚の
制御が離しく、また、焼成時における基板の保持方法も
問題である。Furthermore, with the material (3), since a dry thin film cannot be obtained, the film thickness cannot be controlled easily, and there are also problems in the method of holding the substrate during firing.
更に■の材料は、最近開発されたものであるが、コーテ
イング液が非常に不安定であり、均一透明な膜とするた
めには、厳密な水分管理が必要であるなど工業的に問題
が多い。Furthermore, although material (■) has been developed recently, there are many industrial problems such as the coating liquid is extremely unstable and strict moisture management is required to form a uniform and transparent film. .
(発明が解決しようとする問題点)
本発明者らはこれらの実情に鑑み、優れた透明導電性膜
を容易にfIトることが可能な導電性材料を得るべく鋭
意研究を重ねた結果、本発明を完成させるに至ったもの
である。(Problems to be Solved by the Invention) In view of these circumstances, the present inventors have conducted intensive research to obtain a conductive material that can easily form an excellent transparent conductive film. This has led to the completion of the present invention.
(問題点を解決するための手段)
即ち、本発明は塩基性有機酸スズ溶液からなる導電性材
料に関する。(Means for Solving the Problems) That is, the present invention relates to a conductive material made of a basic organic acid tin solution.
(作 用) 以下、本発明を更に詳細に説明する。(for production) The present invention will be explained in more detail below.
透明導電膜用のみならず、一般にコーティング剤として
所望される導電性材料の特性は、■コーティング時に於
ける成膜性に優れ、均一な膜が得られること、■膜厚の
制御が容易であることである。Characteristics of conductive materials that are desired not only for transparent conductive films but also as coating agents in general are: 1. Excellent film forming properties during coating, allowing a uniform film to be obtained; 2. Easy control of film thickness. That's true.
本発明者らは、各種スズ塩類水溶液を透明導電コーティ
ング剤として検討した結果、特定種の塩基性イj機酸ス
ズ塩水溶液が上記二特性を満たすことを見出したもので
ある。The present inventors investigated various aqueous solutions of tin salts as transparent conductive coating agents, and as a result, discovered that a specific type of aqueous solution of basic tin acid salts satisfies the above two characteristics.
水可溶性の正塩組成の有機酸スズは、従来より公知であ
る。Water-soluble organic acid tin acids having a normal salt composition are conventionally known.
しかし前述の如く、この溶液を基板上にコーティングし
ても、基板上に該塩の結晶が析出し、均一透明な乾燥膜
となり得ない。また仮に、乾燥条件を特別工夫してマク
ロ的には晶析を防いだとしても、e、結晶として析出す
ることは本質的に避けられない点であり、これを焼成し
て酸化スズ組成の膜とした場合、該結晶が形骸化し、ミ
クロ的に均一な膜とならない。However, as described above, even if this solution is coated on a substrate, crystals of the salt will precipitate on the substrate, making it impossible to form a uniform and transparent dry film. Furthermore, even if drying conditions are specially devised to prevent crystallization from a macroscopic perspective, precipitation as crystals is essentially unavoidable. In this case, the crystal becomes a mere skeleton and a microscopically uniform film cannot be obtained.
これらの不均一・性は、電気伝導性及び光透過性双方に
悪影響を及ぼすことは明らかである。It is clear that these non-uniformities have an adverse effect on both electrical conductivity and optical transparency.
これに比し、本発明の塩基性有機酸スズ溶液によるコー
ティングによれば、その乾燥膜はマクロ的にもミクロ的
にも均一なものとなり、更にその焼成品である酸化スズ
組成の膜も均一なものとなって得られる。In contrast, when coating with the basic organic acid tin solution of the present invention, the dried film is uniform both macroscopically and microscopically, and the fired film, which has a tin oxide composition, is also uniform. It can be obtained as something.
本発明の塩基性有機酸スズは新規なものであり、従って
、その溶液の乾燥物がなぜ正塩のような晶析現象を示さ
ないのかは、今のところ不明である。The basic organic tin acid of the present invention is new, and therefore, it is currently unclear why the dried product of its solution does not exhibit the crystallization phenomenon like the normal salt.
均一なコーテイング膜を得るための本発明の塩基性イf
機酸スズとしては、その組成上いくつかの望ましい範囲
が存在する。The basic inventive method for obtaining a uniform coating film
There are several desirable ranges for the composition of tin acid.
先ず、使用される有機酸の種類としては、当然ながらス
ズと可溶性塩基性塩を生成するものでなければならない
。First, the type of organic acid used must naturally form a soluble basic salt with tin.
本発明者らは、各種の有機酸について検討した結果、導
電性材料として、実質上有用であるのほしゅう酸塩、乳
酸塩、グリコール酸塩、グルコン酸塩であることを見出
し外。As a result of studying various organic acids, the present inventors discovered that borate, lactate, glycolate, and gluconate are substantially useful as conductive materials.
これら以外の有機酸として、例えば蟻酸、酢酸、)リク
ロロ酢酸、マロン酸、酒石酸等は後述する製造方法によ
っても可溶性塩基性塩を製造することはできない。As for organic acids other than these, for example, formic acid, acetic acid, dichloroacetic acid, malonic acid, tartaric acid, etc., soluble basic salts cannot be produced even by the production method described below.
次に塩基度としては、コーティング時に於lする成膜性
の良否と密接な関係にあり、−口に言えば、塩基度の高
いものはど成膜性に優れるものとなる。Next, the basicity is closely related to the quality of film formation during coating; in other words, the higher the basicity, the better the film formation.
従って、前述の有機酸を使用して塩基度は30%以上と
し、上限については概ね80%であり、使用する有機酸
の種類によっては90%程度まで調製が可能である。Therefore, using the above-mentioned organic acid, the basicity is set to 30% or more, and the upper limit is approximately 80%, and it is possible to prepare the basicity up to about 90% depending on the type of organic acid used.
尚、塩基度が高い程、スズに対する有機酸の使用量が少
量で済むことは言う才でもなく、この経済的な意味から
も塩基性塩は有用である。Incidentally, it goes without saying that the higher the basicity, the smaller the amount of organic acid to be used relative to tin, and from this economic point of view basic salts are useful.
本発明の塩基性有機酸スズが最低限備えるべき組成上の
制限は、上記二条件のみであるが、本発明はスズ単独系
のみに限定されるものではない。Although the basic organic acid tin of the present invention must have at least the above two conditions, the present invention is not limited to tin alone.
即ち、一般に酸化スズの電気伝導性の改善を目的として
、アンチモン、インジウム、カドミウム、ガリウム、ビ
スマス等が添加されることが多いが、本発明の塩基性有
機酸スズの場合も上記物質を適1添加することにより、
電気伝導性を改善するこ−〇 −
とができる。That is, generally antimony, indium, cadmium, gallium, bismuth, etc. are often added for the purpose of improving the electrical conductivity of tin oxide, but in the case of the basic organic acid tin of the present invention, the above substances are also added. By adding
It is possible to improve electrical conductivity.
例えば、より優れた導電性を示すアンチモンを含む塩基
性イJ機酸スズは、後述の方法により製造すること力f
できる。For example, basic tin acid containing antimony, which exhibits superior conductivity, can be produced by the method described below.
can.
更に、本発明の導電性材料には、透明導電膜の物性、特
にその強度を改善するための添加剤をfガ用することも
可能である。Furthermore, the conductive material of the present invention may contain additives for improving the physical properties of the transparent conductive film, particularly its strength.
例えば、焼成により結合力を発現するりん酸塩系材料、
低融点ガラス組成物、有機シリケート類等が挙げられる
。For example, phosphate-based materials that develop bonding strength when fired,
Examples include low melting point glass compositions and organic silicates.
更に、塗布時に於ける基板とのぬれ性を改善するために
、本発明の導電性材料に適当な有機溶媒、例えばアルコ
ール、セロソルブ等を混合し、作業性をより容易にする
ことも可能である。Furthermore, in order to improve the wettability with the substrate during coating, it is also possible to mix the conductive material of the present invention with a suitable organic solvent, such as alcohol or cellosolve, to make the workability easier. .
本発明の導電性材料は、従来全く知られていなかったも
のであり、透明導電材料の適用分計に於て新たな用途を
生み出すものである。The conductive material of the present invention is completely unknown in the past, and creates new uses in the field of transparent conductive materials.
本発明の導電性材料の特徴を改めて列挙すれば次の通り
である。The characteristics of the conductive material of the present invention are listed below.
第一に、前述の通り、塗布法により均一なコーテイング
膜を得ることができる点である。First, as mentioned above, a uniform coating film can be obtained by the coating method.
才な、塗布液の濃度を変えることにより、膜厚の制御も
自在である。The film thickness can also be freely controlled by changing the concentration of the coating liquid.
第二は、乾燥或いは焼成時に腐食性のガスを発生しない
点である。Second, it does not generate corrosive gas during drying or firing.
本発明の導電性材料は、実質的にスズ(及びアンチモン
等の添加剤)と有機物とのみからなる。The conductive material of the present invention consists essentially only of tin (and additives such as antimony) and organic substances.
従って、これを焼成して酸化物とする工程で発生するガ
スは二酸化炭素と水のみであり、何等の対策も要しない
。Therefore, the only gases generated in the step of firing this into an oxide are carbon dioxide and water, and no measures are required.
これに比べ、無機のスズ塩水溶液として、例えば、塩化
第二スズを使用すると、焼成時に有害腐食性の塩化水素
ガスを多量に発生し、炉の選定や作業環境上好ましくな
い。In contrast, when stannic chloride, for example, is used as the inorganic tin salt aqueous solution, a large amount of harmful and corrosive hydrogen chloride gas is generated during firing, which is unfavorable in terms of furnace selection and working environment.
このような理由がら、本発明の導電性材料は工業的に有
用である。For these reasons, the conductive material of the present invention is industrially useful.
第三は、安定性に優れていることである。Thirdly, it has excellent stability.
スズアルコキシl゛は非常に不安定であり、経時安定性
に劣ると云う致命的な欠陥を有していた。Tin alkoxyl was extremely unstable and had a fatal defect of poor stability over time.
本発明の導電性材料は高純度である上に、安定性も良好
であり、より高品位のものであると云える。The conductive material of the present invention has not only high purity but also good stability, and can be said to be of higher quality.
以上のような優れた特徴をもつ本発明の導電性材料は、
透明導電膜材料として非常に有益であるばかりか、各種
フィラーにコーティングすることによる導電性付与剤、
更にはガスセンサー材料等のエレクトロセラミックス分
野への適用についても有用であり、その他数多くの用途
に適用し得る新規な物質である。The conductive material of the present invention having the above-mentioned excellent characteristics,
Not only is it very useful as a transparent conductive film material, but it can also be used as a conductivity imparting agent by coating various fillers.
Furthermore, it is useful for applications in the field of electroceramics such as gas sensor materials, and is a novel substance that can be applied to many other uses.
本発明の塩基性有機酸スズは、以下の方法によって製造
することができる。The basic organic acid tin of the present invention can be produced by the following method.
先ず第一に、スズ化合物と重炭酸アルカリ金属塩または
重炭酸アンモニウム塩とを反応させゲルを製造する。First of all, a gel is produced by reacting a tin compound with an alkali metal bicarbonate or an ammonium bicarbonate salt.
スズ化合物としては、塩化第二スズ、硫酸第二スズ等を
、重炭酸アルカリ金属塩として重炭酸す1リウム、重炭
酸カリウム等を例示することができる。Examples of the tin compound include stannic chloride and stannic sulfate, and examples of the alkali metal bicarbonate include monolium bicarbonate and potassium bicarbonate.
その使用割合は、ゲル生成反応の反応終了時の反応液P
Hが6以上となるような割合で使用することかp了まし
い。The proportion used is the reaction solution P at the end of the gel formation reaction.
It is advisable to use it in such a proportion that H is 6 or more.
重炭酸アルカリ金属塩または重炭酸アンモニウム塩の使
用iがこれよりも少量であると、スズが完全にゲル化せ
ず収率が悪くなり、また経済的理由等から好ましくない
。If the amount i of the alkali metal bicarbonate or ammonium bicarbonate used is smaller than this, the tin will not be completely gelled and the yield will be poor, which is also undesirable for economic reasons.
また別の方法として、スズ化合物にスズ酸すトリウム、
スズ酸カリウム等を用い、これと二酸化炭素とを反応さ
せてゲルを製造してもよい。Another method is to add thorium stannate to the tin compound.
A gel may be produced by using potassium stannate or the like and reacting this with carbon dioxide.
尚、前述の導電性改善のための添加剤、例えばアンチモ
ンを含む塩基性有機酸スズを得たい場合は、スズ化合物
の水溶液に予めアンチモン化合物を添加しておき、スズ
と共に沈澱させ、ゲルを得る方法が簡便である。In addition, if you want to obtain the above-mentioned additive for improving conductivity, for example, a basic organic acid tin containing antimony, add an antimony compound to an aqueous solution of the tin compound in advance and precipitate it together with the tin to obtain a gel. The method is simple.
勿論、スズとアンチモンとを別々に沈澱させた後、双方
のゲルを混合して後段の処理に供しても差し支えない。Of course, tin and antimony may be precipitated separately, and then both gels may be mixed and subjected to subsequent processing.
このようにして製造したゲルは、次いで洗浄を行い不純
物を除去する。The gel thus produced is then washed to remove impurities.
残存不純物量に関1ては、塩基性有機酸スズの製造」二
、また用途上少ない方が好ましい。Regarding the amount of residual impurities, it is preferable to have a small amount in view of the production of basic organic acid tin and the intended use.
洗浄手段に関しては特に限定されず、通常用いられる注
水ろ過、リパルプ−遠心分離法等の任意の方法を用いる
ことができる。The cleaning means is not particularly limited, and any commonly used methods such as water filtration and repulp centrifugation can be used.
また、適当なイオン交換?!1詣等と接触させ、不純物
を除去する方法も採用し得る。Also, proper ion exchange? ! A method may also be adopted in which impurities are removed by contacting with a pilgrim.
洗浄後のゲルに、次いで有機酸及び必要に応じて水を加
えて溶解させることにより、本発明の塩基性有機酸スズ
が得られる。The basic organic acid tin of the present invention can be obtained by adding and dissolving an organic acid and, if necessary, water to the washed gel.
尚、ここで使用する有機酸は、前述のしゆう酸、乳酸、
グリコール酸、グルコン酸の中から選ばれた酸である。The organic acids used here include the aforementioned oxalic acid, lactic acid,
It is an acid selected from glycolic acid and gluconic acid.
また、その使用量は塩基度が30%以上、換言すれば、
スズに対する有機酸の当量が0.7以下となる量とする
。In addition, the amount used is that the basicity is 30% or more, in other words,
The amount is such that the equivalent weight of organic acid to tin is 0.7 or less.
更に、水量は所望の濃度のものを得るべく、適宜使用す
れば良い。Furthermore, the amount of water may be appropriately used to obtain the desired concentration.
尚、ゲルの溶解性を高めるため、必要に応じて加熱を行
ってもよい。In addition, in order to improve the solubility of the gel, heating may be performed as necessary.
(実施例)
以下に本発明の実施例を掲げ更に説明を行うが、本発明
はこれらに限定されるものではない。(Example) The present invention will be further explained below with reference to Examples, but the present invention is not limited thereto.
また、%は特にことわらない限り全て前景%を示す。In addition, all percentages indicate foreground percentage unless otherwise specified.
実施例1
重炭酸アンモニウム水溶液(N11.2.9%)100
0部に攪拌を行いながら塩化第二スズ水溶液(SnO2
16,5%)300部を徐々に添加した。Example 1 Ammonium bicarbonate aqueous solution (N11.2.9%) 100
0 parts of stannic chloride aqueous solution (SnO2) while stirring.
16.5%) were gradually added.
生成したゲルをろ別した後、ゲル中に塩素が認められな
くなるまで注水ろ過洗浄を行った。その結果、5n02
36.5%を含有するゲルを11)た。After filtering out the generated gel, water injection filtration and cleaning were performed until no chlorine was found in the gel. As a result, 5n02
A gel containing 36.5% was obtained (11).
次いで、このゲルを用いて、塩基度25%、 SnO2
濃度5%の各種塩基性有機酸スズ水溶液を製造した。Then, using this gel, basicity 25%, SnO2
Various basic organic acid tin aqueous solutions having a concentration of 5% were produced.
方法は、該ゲル各100部にそれぞれ第1表に示した量
の有機酸及び水を添加混合し、攪拌を行いながら、90
℃で1時間加熱処理を行った。The method is to add and mix organic acids and water in the amounts shown in Table 1 to 100 parts of each of the gels, and add 90 parts of water while stirring.
Heat treatment was performed at ℃ for 1 hour.
得られた各種塩基性有機酸スズ溶液他生酸物の性状を第
1表に示す。Table 1 shows the properties of the various basic organic acid tin solutions and other biological acids obtained.
第1表で明らかな様に、しゅう酸、1’L酸、グリコー
ル酸、グルコン酸を用いた場合にのみ、本発明の塩基性
有機酸スズ水溶液が得られることかわかる。As is clear from Table 1, it can be seen that the basic organic acid tin aqueous solution of the present invention can be obtained only when oxalic acid, 1'L acid, glycolic acid, and gluconic acid are used.
実施例2
各種塩基度の塩基性しゅう酸スズ水溶液を調製し、導電
性材料としての性能を調べた。Example 2 Basic tin oxalate aqueous solutions of various basicities were prepared and their performance as conductive materials was investigated.
実施例1で得た5n0236.5%を含有するゲル10
0部に、それぞれ第2表に示した量のしゅう酸(二水和
物)及び水を添加混合し、攪拌を行いながら温度90℃
で1時間加熱処理を行った。Gel 10 containing 6.5% of 5n02 obtained in Example 1
0 parts, oxalic acid (dihydrate) and water in the amounts shown in Table 2 were added and mixed, and heated to 90°C while stirring.
Heat treatment was performed for 1 hour.
その結果、SnO2濃度2%、塩基度30.50及び8
0%の塩基性しゅう酸スズ水溶液が得られた。(本発明
例)
また比較例として、しゅう酸及び水の添加量を第2表に
示した量とした他は、前記と同様の操作により、正塩組
成のしゅう酸スズ水溶液を得た。As a result, SnO2 concentration 2%, basicity 30.50 and 8
A 0% basic aqueous tin oxalate solution was obtained. (Example of the present invention) As a comparative example, an aqueous tin oxalate solution having a normal salt composition was obtained by the same operation as described above, except that the amounts of oxalic acid and water added were changed to the amounts shown in Table 2.
(比較例)
これら本発明及び比較例の水溶液を、76 X 26a
mのスライドガラス上に回転数1100Orpでスビン
コ= 14−
−テイングを行った。(Comparative example) These aqueous solutions of the present invention and comparative example were
Svinco = 14--taing was performed on a slide glass of 1,100 rpm at a rotational speed of 1100 rpm.
次いで、これらのコーティングガラスを100°Cで乾
燥し、表面状態を観察した。更に、これらを60O°C
で30分間熱処理し、得られた透明導電コーティングガ
ラスの表面抵抗及び光透過率を測定した。Next, these coated glasses were dried at 100°C and the surface condition was observed. Furthermore, these were heated to 60O°C.
The surface resistance and light transmittance of the obtained transparent conductive coated glass were measured.
結果を第2表に示した。The results are shown in Table 2.
第2表で明らかな様に、本発明例の塩基性しゆう酸スズ
水溶液によるコーティング処理によれば、良好な透明導
電ガラスが得られるのに対し、正塩組成のしゆう酸スズ
水溶液では、表面抵抗、光透過率ともに劣るものとなる
。As is clear from Table 2, good transparent conductive glass can be obtained by the coating treatment using the basic tin oxalate aqueous solution of the present invention, whereas the coating treatment using the basic tin oxalate aqueous solution has a normal salt composition. Both surface resistance and light transmittance are inferior.
実施例3
導電性改善のための添加剤として、アンチモンを含有し
た塩基性1し酸スズ水溶液からなる本発明の導電性材料
を以下の方法で製造した。Example 3 A conductive material of the present invention comprising an aqueous basic tin oxide solution containing antimony as an additive for improving conductivity was produced by the following method.
塩化第二スズ水溶1(Sn0217.5%)1000部
に、三塩化アンチモン5.4部を加え、80℃に加温し
て溶解させた。5.4 parts of antimony trichloride was added to 1000 parts of stannic chloride aqueous solution 1 (Sn02 17.5%) and dissolved by heating to 80°C.
冷却後、これを重炭酸アンモニウム水溶1(NH33゜
0%)3494部に攪拌を行いながら徐々に添加しゲル
を生成させた。After cooling, this was gradually added to 3494 parts of ammonium bicarbonate aqueous solution 1 (NH33.0%) while stirring to form a gel.
生成したゲルをろ別し、これに約1000部の水を加え
てリパルプ混合した後、遠心分離機により固液分離した
。The generated gel was filtered, about 1000 parts of water was added thereto, repulped, and then solid-liquid separated using a centrifuge.
この操作を、ゲル中に塩素が認められなくなるまで繰り
返し、その結果、SnO,32,1%、Sb O,52
%を含有するゲルを得た。This operation was repeated until no chlorine was observed in the gel, and as a result, SnO, 32.1%, Sb O, 52
A gel was obtained containing %.
次いで、該ゲル100部に50%1L酸19部と水41
部を添加混合し、攪拌を行いながら90°Cで1時間加
熱処理し、ゲルを溶解させた。Next, 19 parts of 50% 1L acid and 41 parts of water were added to 100 parts of the gel.
The mixture was heated at 90°C for 1 hour while stirring to dissolve the gel.
その結果、Sn0220%、塩基度75%のアンチモン
を含イfする塩基性乳酸スズ水溶液を得た。As a result, a basic tin lactate aqueous solution containing 20% Sn0 and antimony with a basicity of 75% was obtained.
これをSnO2濃度2.5%となるように水で希釈した
後、実施例2と同様の操作により、ガラス上にコーティ
ング処理を行い、透明導電コーティングガラスを得た。After diluting this with water to give a SnO2 concentration of 2.5%, a coating treatment was performed on glass in the same manner as in Example 2 to obtain transparent conductive coated glass.
このガラスの表面抵抗及び光透過率を測定した結果、表
面抵抗は5.5にΩ/口であり、光透過率は91%であ
った。As a result of measuring the surface resistance and light transmittance of this glass, the surface resistance was 5.5Ω/hole, and the light transmittance was 91%.
特許出願人 多木化学株式会社 = 18 −Patent applicant: Taki Chemical Co., Ltd. = 18 -
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31805687A JPH01159910A (en) | 1987-12-15 | 1987-12-15 | Conductive material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP31805687A JPH01159910A (en) | 1987-12-15 | 1987-12-15 | Conductive material |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01159910A true JPH01159910A (en) | 1989-06-22 |
JPH0544127B2 JPH0544127B2 (en) | 1993-07-05 |
Family
ID=18094988
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP31805687A Granted JPH01159910A (en) | 1987-12-15 | 1987-12-15 | Conductive material |
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Country | Link |
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JP (1) | JPH01159910A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS565356A (en) * | 1979-06-22 | 1981-01-20 | Hitachi Ltd | Formation of transparent conductive film |
-
1987
- 1987-12-15 JP JP31805687A patent/JPH01159910A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS565356A (en) * | 1979-06-22 | 1981-01-20 | Hitachi Ltd | Formation of transparent conductive film |
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JPH0544127B2 (en) | 1993-07-05 |
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