JPS5923403B2 - Method for manufacturing transparent conductive film - Google Patents

Method for manufacturing transparent conductive film

Info

Publication number
JPS5923403B2
JPS5923403B2 JP53073462A JP7346278A JPS5923403B2 JP S5923403 B2 JPS5923403 B2 JP S5923403B2 JP 53073462 A JP53073462 A JP 53073462A JP 7346278 A JP7346278 A JP 7346278A JP S5923403 B2 JPS5923403 B2 JP S5923403B2
Authority
JP
Japan
Prior art keywords
conductive film
transparent conductive
organic
indium
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53073462A
Other languages
Japanese (ja)
Other versions
JPS54164284A (en
Inventor
要 宮沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suwa Seikosha KK
Original Assignee
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suwa Seikosha KK filed Critical Suwa Seikosha KK
Priority to JP53073462A priority Critical patent/JPS5923403B2/en
Publication of JPS54164284A publication Critical patent/JPS54164284A/en
Publication of JPS5923403B2 publication Critical patent/JPS5923403B2/en
Expired legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Conductive Materials (AREA)
  • Manufacturing Of Electric Cables (AREA)

Description

【発明の詳細な説明】 本発明は、透明導電膜の製造方法に関するものであり、
特に有機インジウム又は有機インジウム有機スズの混合
物から、それぞれ酸化インジウム酸化インジウム、酸化
スズを得ることを特徴とするものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a transparent conductive film,
In particular, it is characterized in that indium oxide, indium oxide, and tin oxide are obtained from organic indium or a mixture of organic indium and organic tin, respectively.

本発明の目的は、安定でしかも比抵抗が小さく透過率の
高い透明導電膜を安価にしかも量産性良く得ることにあ
る。
An object of the present invention is to obtain a transparent conductive film that is stable, has a low specific resistance, and has a high transmittance at a low cost and with good mass productivity.

従来から透明導電膜としては、酸化インジウム酸化スズ
又は両者の混合物、酸化スズ、酸化アンチモン混合物、
酸化チタン、酸化ロジウム、酸化白金等の金属酸化物、
あるいは金等の金属薄膜が用いられてきた。
Conventionally, transparent conductive films include indium oxide, tin oxide, or a mixture of both, tin oxide, antimony oxide mixture,
Metal oxides such as titanium oxide, rhodium oxide, platinum oxide,
Alternatively, a thin film of metal such as gold has been used.

その被覆方法は、それぞれ透明導電膜の種類によつて異
なるが、一般には、スパッタリング法、真空蒸着法、C
VD法、スプレー法等が用いられている。
The coating method differs depending on the type of transparent conductive film, but generally, sputtering method, vacuum evaporation method, C
VD method, spray method, etc. are used.

これらの被覆方法、すなわち透明導電膜の製造方法の欠
点を、通常用いられる透明導電膜を例に、表1にあげる
。酸化インジウム又は酸化インジウム・酸化スズ混合体
系透明導電膜は、比抵抗が小さくしかも表面反射率が小
さく透過率が高く、有用であるにもかかわらず、CVD
法、スプレー法等を用いることが可能な量産性ある適当
なソースがまだ発見されていない現状である。
The drawbacks of these coating methods, ie, methods of manufacturing transparent conductive films, are listed in Table 1, taking commonly used transparent conductive films as an example. Indium oxide or indium oxide/tin oxide mixture transparent conductive films have low resistivity, low surface reflectance, and high transmittance, and are useful for CVD.
At present, a suitable source that can be mass-produced using methods such as the method and the spray method has not yet been discovered.

本発明は、有機インジウム又は有機スズをソースとして
分解し、透明導電膜を得る新規な技術である。
The present invention is a novel technique for obtaining a transparent conductive film by decomposing organic indium or organic tin as a source.

本発明に用いる有機インジウム、有機スズは、それぞれ
In(0R)3,Sn(0R)4で表わされる。ここで
、Rは直鎖又は側鎖アルキルで、一般には炭素数1〜2
0までのものが用いられるが、さらに望ましくは、1〜
8である。これらの有機インジウム、有機スズは、アル
コール類エーテル類、ケトン類、エステル類等の有機洛
媒又はこれらの混合溶媒中に適当量陪解して用いる。ま
た加水分解を進めるため、少量の酸、アルカリ水、塩等
の添加を行なつても良い。透明導電膜を被覆する基板は
、ガラス、セラミツク等で350℃以上の耐熱性を有す
るものであれば良い。
The organic indium and organic tin used in the present invention are represented by In(0R)3 and Sn(0R)4, respectively. Here, R is a straight chain or side chain alkyl, generally having 1 to 2 carbon atoms.
A value up to 0 is used, but more preferably a value of 1 to
It is 8. These organic indium and organic tin are used after being dissolved in an appropriate amount in an organic solvent such as alcohol ethers, ketones, esters, or a mixed solvent thereof. Further, in order to promote hydrolysis, a small amount of acid, alkaline water, salt, etc. may be added. The substrate covering the transparent conductive film may be made of glass, ceramic, or the like, as long as it has heat resistance of 350° C. or higher.

本発明の有機インジウム又は有機インジウム・有機スズ
混合体を前記浩媒に適当量混合浩解し、基板に塗布し1
00〜150℃で溶媒を除去後、350℃以上で焼成を
行なえば、無色透明な透明導電膜が得られる。
An appropriate amount of the organic indium or organic indium/organotin mixture of the present invention is mixed and dissolved in the above-mentioned heating medium, and the mixture is applied to a substrate.
If the solvent is removed at 00 to 150°C and then baked at 350°C or higher, a colorless and transparent transparent conductive film can be obtained.

この時の化学反応は、次式のように想像される。The chemical reaction at this time can be imagined as shown in the following equation.

塗布方法は、等速引き上げ法、スプレー法等が考えられ
るが、被膜の均一性、量産性の両面から等速引き上げ法
が有利である。特許請求の範囲第2項は、酸化インジウ
ムの比抵抗を更に小さくする目的であ9、一般には酸化
スズが5(f)前後で極小の比抵抗が得られる。
Possible coating methods include a constant-velocity pulling method, a spraying method, etc., but the constant-velocity pulling method is advantageous in terms of both uniformity of the coating and mass productivity. The object of claim 2 is to further reduce the resistivity of indium oxide9, and generally, tin oxide has a minimum resistivity of around 5(f).

透明導電膜の用途によつて適当に用いることができる。
このようにして本発明で得られた透明導電膜はデイスプ
レイ用、抵抗加熱用、光学用等に用いられる。以下、実
施例に従つて本発明を説明する。
It can be used appropriately depending on the purpose of the transparent conductive film.
The transparent conductive film thus obtained according to the present invention can be used for displays, resistance heating, optical applications, etc. The present invention will be described below with reference to Examples.

実施例 1 溶媒としてイソプロピールアルコール500t)、酢酸
エチル50%を用いIn(0C4H,)3を5ωt%と
し、さらにIn(0C4H9)3に対してSn(0C4
H,)Iの量を変化させて、基板としてソーダ系ガラス
を用い、等速引き上げ法で塗布した時の抵抗値の変化を
、表2に示す。
Example 1 Using isopropyl alcohol (500t) and ethyl acetate (50%) as a solvent, In(0C4H,)3 was adjusted to 5ωt%, and Sn(0C4H,)3 was further added to In(0C4H9)3.
Table 2 shows the changes in resistance when the amount of H, )I was changed and the coating was applied by a constant speed pulling method using soda-based glass as a substrate.

膜厚は、溶液の濃度及び引き上げ速度によつて自由にコ
ントロールされ、従つて比抵抗も膜厚で自由に変えるこ
とができる。
The film thickness can be freely controlled by the concentration of the solution and the pulling rate, and therefore the specific resistance can also be freely changed by changing the film thickness.

しかし2000A0以上になるとクラツクが生ずる。S
n(0C4H,)4/In(0C4H9)3−5%で極
小の比抵抗が得られることがわかつた。以上のことより
、スズの添加割合及び膜厚によつて比抵抗は自由にコン
トロールできる。
However, if it exceeds 2000A0, a crack will occur. S
It was found that a minimum resistivity can be obtained with n(0C4H,)4/In(0C4H9) of 3-5%. From the above, the resistivity can be freely controlled by changing the proportion of tin added and the film thickness.

焼成温度の影響はほとんどなく、500℃以上で1Hr
以上で一定の比抵抗となつた。焼成温度が低いと、基板
との密着性がやや減少した。又、焼成温度の低い時及び
焼成時間の短かい時は、十分な透明度は得られなかつた
。又、一般に酸化インジウム系の透明導電膜は表面反射
率の小さいことが知られているが、本方法により得られ
た透明導電膜は、非常に反射率が小さく、従来品と何ら
変わることがなかつた。特に、デイスプレイ用透明導電
膜として用いるに適していることがわかつた。
There is almost no effect of firing temperature, 1 hour at 500℃ or higher
At this point, the resistivity became constant. When the firing temperature was low, the adhesion with the substrate was slightly reduced. Further, when the firing temperature was low or the firing time was short, sufficient transparency could not be obtained. In addition, it is generally known that indium oxide-based transparent conductive films have low surface reflectance, but the transparent conductive film obtained by this method has extremely low reflectance and is no different from conventional products. Ta. It was found that it is particularly suitable for use as a transparent conductive film for displays.

以上、実施例に従つて説明したが、本発明は、有機イン
ジウム又は有機インジウム、有機スズ混合物より加水分
解、熱分解等によつて透明導電膜を得る方法に関するも
のであリ、その塗布方法、溶媒、焼成温度、時間等の処
理条件及び基板、使用用途等を問うものではない。
As described above, the present invention relates to a method for obtaining a transparent conductive film from organic indium or a mixture of organic indium and organic tin by hydrolysis, thermal decomposition, etc.; Processing conditions such as solvent, firing temperature, time, substrate, intended use, etc. are not in question.

Claims (1)

【特許請求の範囲】 1 一般式In(OR)_3(R:アルキル基)から成
る有機インジウム化合物を有機溶媒に溶解した溶液を基
板に塗布し、次に前記溶媒を除去する加熱をし、この後
焼成により基板上に酸化インジウムの導電膜を得ること
を特徴とする透明導電膜の製造方法。 2 一般式In(OR)_3とSn(OR)_4(R:
アルキル基)から成る有機インジウム化合物と有機スズ
化合物とを有機溶媒に溶解した溶液を基板に塗布し、次
に前記溶媒を除去する加熱をし、この後焼成により基板
上に酸化インジウム・酸化スズ混合物の導電膜を得るこ
とを特徴とする透明導電膜の製造方法。
[Scope of Claims] 1. A solution of an organic indium compound having the general formula In(OR)_3 (R: alkyl group) dissolved in an organic solvent is applied to a substrate, and then heated to remove the solvent. A method for producing a transparent conductive film, which comprises obtaining a conductive film of indium oxide on a substrate by post-baking. 2 General formulas In(OR)_3 and Sn(OR)_4(R:
A solution of an organic indium compound (alkyl group) and an organic tin compound dissolved in an organic solvent is applied to the substrate, then heated to remove the solvent, and then baked to form an indium oxide/tin oxide mixture on the substrate. A method for producing a transparent conductive film, characterized by obtaining a conductive film.
JP53073462A 1978-06-16 1978-06-16 Method for manufacturing transparent conductive film Expired JPS5923403B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53073462A JPS5923403B2 (en) 1978-06-16 1978-06-16 Method for manufacturing transparent conductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53073462A JPS5923403B2 (en) 1978-06-16 1978-06-16 Method for manufacturing transparent conductive film

Publications (2)

Publication Number Publication Date
JPS54164284A JPS54164284A (en) 1979-12-27
JPS5923403B2 true JPS5923403B2 (en) 1984-06-01

Family

ID=13518940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53073462A Expired JPS5923403B2 (en) 1978-06-16 1978-06-16 Method for manufacturing transparent conductive film

Country Status (1)

Country Link
JP (1) JPS5923403B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5767674A (en) * 1980-10-13 1982-04-24 Tokyo Denshi Kagaku Kabushiki Solution forming transparent electro-conductive film
JP2718023B2 (en) * 1986-09-17 1998-02-25 松下電器産業株式会社 Method for forming transparent conductive film
JP2718025B2 (en) * 1986-12-26 1998-02-25 松下電器産業株式会社 Method for forming transparent conductive film
JP2887318B2 (en) * 1988-08-29 1999-04-26 松下電器産業株式会社 Method of manufacturing metal thin film resistor
JPH03148897A (en) * 1989-11-06 1991-06-25 Matsushita Electric Ind Co Ltd Mounting method for electronic circuit component

Also Published As

Publication number Publication date
JPS54164284A (en) 1979-12-27

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