JPS62267476A - Composition for forming transparent electrically conductive coated film - Google Patents
Composition for forming transparent electrically conductive coated filmInfo
- Publication number
- JPS62267476A JPS62267476A JP10773586A JP10773586A JPS62267476A JP S62267476 A JPS62267476 A JP S62267476A JP 10773586 A JP10773586 A JP 10773586A JP 10773586 A JP10773586 A JP 10773586A JP S62267476 A JPS62267476 A JP S62267476A
- Authority
- JP
- Japan
- Prior art keywords
- tin
- composition
- compd
- solvent
- transparent conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 27
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 14
- -1 tin alkoxide Chemical class 0.000 claims abstract description 13
- 239000002904 solvent Substances 0.000 claims abstract description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 10
- 239000011737 fluorine Substances 0.000 claims abstract description 10
- 150000003606 tin compounds Chemical class 0.000 claims description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- 150000007524 organic acids Chemical class 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 150000002148 esters Chemical class 0.000 claims description 3
- 150000002576 ketones Chemical class 0.000 claims description 3
- 229930195734 saturated hydrocarbon Natural products 0.000 claims description 3
- 125000003158 alcohol group Chemical group 0.000 claims description 2
- 125000005594 diketone group Chemical group 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 4
- 229910001887 tin oxide Inorganic materials 0.000 abstract description 4
- YUOWTJMRMWQJDA-UHFFFAOYSA-J tin(iv) fluoride Chemical compound [F-].[F-].[F-].[F-].[Sn+4] YUOWTJMRMWQJDA-UHFFFAOYSA-J 0.000 abstract description 4
- 238000002156 mixing Methods 0.000 abstract description 2
- 230000008878 coupling Effects 0.000 abstract 2
- 238000010168 coupling process Methods 0.000 abstract 2
- 238000005859 coupling reaction Methods 0.000 abstract 2
- 150000004703 alkoxides Chemical class 0.000 abstract 1
- 229940071182 stannate Drugs 0.000 abstract 1
- 125000005402 stannate group Chemical group 0.000 abstract 1
- 238000000034 method Methods 0.000 description 15
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 12
- 239000000758 substrate Substances 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 7
- 238000010992 reflux Methods 0.000 description 5
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 4
- 150000002222 fluorine compounds Chemical class 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- BLBNEWYCYZMDEK-UHFFFAOYSA-N $l^{1}-indiganyloxyindium Chemical compound [In]O[In] BLBNEWYCYZMDEK-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 150000002472 indium compounds Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- REIYHFWZISXFKU-UHFFFAOYSA-N Butyl acetoacetate Chemical compound CCCCOC(=O)CC(C)=O REIYHFWZISXFKU-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910008066 SnC12 Inorganic materials 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 239000002198 insoluble material Substances 0.000 description 1
- 239000003350 kerosene Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000004812 organic fluorine compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- GCKZNUDNTDWGFM-UHFFFAOYSA-N pentane-2,4-dione;tin Chemical compound [Sn].CC(=O)CC(C)=O GCKZNUDNTDWGFM-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- ANOBYBYXJXCGBS-UHFFFAOYSA-L stannous fluoride Chemical compound F[Sn]F ANOBYBYXJXCGBS-UHFFFAOYSA-L 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ガラス、セラミック等の基板表面に透明導電
性被膜を形成する組成物に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a composition for forming a transparent conductive film on the surface of a substrate such as glass or ceramic.
ガラス、セラミックス等の絶縁基板上に形成したSn、
In、 Zn、 Cd等の酸化物の被膜は、可視光の透
過性が高く、良好な導電性を示し、EL、液晶表示素子
、エレクトロクロミンク表示素子、太陽電池などの透明
電極や、自動車、航空機、建物等の窓ガラスの防曇用抵
抗発熱被膜として用いられている。Sn formed on an insulating substrate such as glass or ceramics,
Oxide films such as In, Zn, and Cd have high visible light transmittance and good conductivity, and are used in transparent electrodes for EL, liquid crystal display elements, electrochromic display elements, solar cells, etc., automobiles, It is used as an anti-fog resistance heating coating for window glass of aircraft, buildings, etc.
透明導電性被膜としてはSnO,系、In、 O,系が
良く知られており、それらの被膜の形成法としては、S
nO□、In2O,などを蒸着、あるいはスパッターリ
ングなど減圧下で物理的に、基板表面に付着させる方法
、あらかじめ加熱した基板上に、スズ化合物、インジウ
ム化合物の溶液をスプレーし、熱分解、酸化を起こさせ
酸化物被膜を形成させる方法、スズ化合物、インジウム
化合物を含む溶液を基板上に塗布後、焼付けにより、酸
化物被膜を形成させる方法、などが知られている。以上
のような方法により透明導電性被膜が得られているが、
安定な低抵抗透明導電膜を得るためには、抵抗調整剤と
して、SnO□系ではアンチモンやフッ素、 In2O
。As transparent conductive films, SnO, type and In, O, type are well known, and methods for forming these films include S.
A method of physically attaching nO□, In2O, etc. to the substrate surface under reduced pressure such as vapor deposition or sputtering, and a method of spraying a solution of a tin compound or indium compound onto a preheated substrate to cause thermal decomposition and oxidation. A method is known in which an oxide film is formed by raising the oxide film, and a method in which a solution containing a tin compound or an indium compound is applied onto a substrate and then baked to form an oxide film. Although transparent conductive films have been obtained by the methods described above,
In order to obtain a stable low-resistance transparent conductive film, antimony, fluorine, and In2O are used as resistance adjusters for SnO□ series.
.
系では錫やフッ素を添加することが多い。In these systems, tin and fluorine are often added.
特に塗布焼寸は法、スプレー法などにおけるフッ素を添
加する方法として、有機フッ素化物、フッ化有機酸など
を用いることも可能である。しかしその場合には、熱処
理温度を600〜700℃近くまで高めないと導電性は
上がらず、融解温度の低い基板を用いる場合には適さな
い。また熱分解に際して人体に有毒で、しかも腐蝕性の
強いフッ素化合物のガスが発生するため実用上問題が多
い。In particular, organic fluorides, fluorinated organic acids, etc. can also be used as a method for adding fluorine in coating and baking methods, spray methods, and the like. However, in that case, the conductivity will not increase unless the heat treatment temperature is raised to around 600 to 700°C, which is not suitable when using a substrate with a low melting temperature. Further, during thermal decomposition, fluorine compound gas is generated which is toxic to the human body and highly corrosive, which poses many practical problems.
酸化錫被膜における抵抗調整機能をもつフッ素をSn−
F結合を持つ化合物として錫アルコキシド溶液に加え均
一溶液とすることにより、塗布焼付は時に人体に有毒で
腐蝕性のフッ素化合物が大量に発生することを抑制する
ことができることを見出した。Fluorine, which has a resistance adjustment function in the tin oxide film, is
It has been found that by adding a compound having an F bond to a tin alkoxide solution to form a uniform solution, it is possible to suppress the generation of large amounts of fluorine compounds that are sometimes toxic and corrosive to the human body during coating and baking.
本発明によれば、2価または4価の錫アルコキシド、有
機酸錫、錫β−ジケトン錯体のうちの少くとも1種とS
n−F結合を有する2価または4価のフッ化錫化合物と
、溶媒からなり、フッ素含有率がF/Sn重量比で0.
01〜10.0%である透明導電性被膜形成組成物が提
供される。According to the present invention, at least one of divalent or tetravalent tin alkoxide, organic acid tin, and tin β-diketone complex and S
It consists of a divalent or tetravalent tin fluoride compound having an n-F bond and a solvent, and has a fluorine content of 0.0% in F/Sn weight ratio.
01-10.0% of the transparent conductive film-forming composition is provided.
本発明の組成物は2価または4価の錫のアルコキシド、
有fi酸錫、錫β−ジケトン錯体(以下有機錫化合物と
いう)の少くとも1種と、Sn−F結合を有する2価ま
たは4価の錫の化合物と溶媒とを単に混合し、好ましく
は還流加熱して得られる。The composition of the present invention comprises a divalent or tetravalent tin alkoxide,
At least one type of tin oxide, tin β-diketone complex (hereinafter referred to as an organic tin compound), a divalent or tetravalent tin compound having an Sn-F bond, and a solvent are simply mixed, preferably under reflux. Obtained by heating.
本発明の組成物において、2価または4価の錫アルコキ
シドまたは有機酸錫、錫β−ジケトン錯体はSn (O
R)2 (Rはアルキル基、以下同じ)、Sn(OR)
、、 SnC1n(OR)、n(n=1−3) 、 S
nC1(Oll)(OR)、、SnC12(Oll)
(OR) ; Sn−to−C−R)2.Sn(A−A
)z等またはこれらの混合物である。In the composition of the present invention, the divalent or tetravalent tin alkoxide or organic acid tin, tin β-diketone complex is Sn (O
R)2 (R is an alkyl group, the same applies hereinafter), Sn(OR)
,, SnC1n (OR), n (n=1-3), S
nC1(Oll)(OR),, SnC12(Oll)
(OR); Sn-to-C-R)2. Sn(A-A
) z etc. or a mixture thereof.
本発明の組成物において、 Sn−F結合を有する4価
の錫化合物はSnF4.SnFy+(OR)+−n (
Rは低級アルキル基、以下同じ、n=1〜3)、SnC
1fflF、 (OR) (41−、)(16m (4
,1≦n (4でかつm+n<4) 、 SnFz (
A−A)z(A−Aは置換または無置換のβ−ジケトン
)、SnF2(OOCR)2. SnF R−(n=1
−3)等である。In the composition of the present invention, the tetravalent tin compound having a Sn-F bond is SnF4. SnFy+(OR)+-n (
R is a lower alkyl group, the same applies hereinafter, n = 1 to 3), SnC
1fflF, (OR) (41-,)(16m (4
, 1≦n (4 and m+n<4), SnFz (
A-A)z (A-A is a substituted or unsubstituted β-diketone), SnF2 (OOCR)2. SnF R-(n=1
-3) etc.
n (4n)
本発明の組成物において、溶媒が、炭素原子数ジ゛
1〜20のアルコール、エステル、ケトン、β−所トン
、エーテル、飽和炭化水素、芳香族炭化水素、等または
これらの混合物であり、有機錫化合物、フッ化錫化合物
をよく溶解し、溶媒自身が混合において、有害な有機フ
ッ素化合物を発、生させないものである。n (4n) In the composition of the present invention, the solvent is an alcohol having 1 to 20 carbon atoms, an ester, a ketone, a β-carbon, an ether, a saturated hydrocarbon, an aromatic hydrocarbon, etc., or a mixture thereof. It dissolves organic tin compounds and tin fluoride compounds well, and the solvent itself does not generate harmful organic fluorine compounds during mixing.
本発明の組成物において、フッ素含有量はF/Sn重凰
比で0.01〜10%である。0.01%未満では効果
がなく、10%以上になってもそれ以上の効果の向上は
見られない。In the composition of the present invention, the fluorine content is 0.01 to 10% in F/Sn weight ratio. If it is less than 0.01%, there is no effect, and even if it exceeds 10%, no further improvement in the effect is observed.
本発明の組成物において、錫化合物の量は全組成物に対
してSnO2重量%換算で0.01〜45%である。In the composition of the present invention, the amount of the tin compound is 0.01 to 45% in terms of 2% by weight of SnO based on the total composition.
この濃度は形成すべき膜の厚さその他を考慮して選択さ
れる。This concentration is selected in consideration of the thickness of the film to be formed and other factors.
使用可能な溶媒は、炭素数1〜20のアルコール類、ベ
ンゼン、トルエン、キシレンなどの芳香族炭化水素類、
n−ヘキサン、ケロシン等の飽和炭化水素類、酢酸エチ
ル、酢酸ブチル、アセト酢酸ブチル等のエステル類、ア
セトン、メチルエチルケトン、アセチルアセトン等のケ
トン、β−ジケトン類、エチルエーテル、ブチルエーテ
ル、メチルセルロソルブ、エチルセルロソルブ、ジオキ
サン、テトラヒドロフラン類のエーテル類等を1種又は
2種以上混合して使用出来る。また塗布液の成膜特性の
向上のためには、錫化合物とフッ化錫化合物との反応後
に、溶媒を蒸発し、酢酸エチル等の塗布に適した溶媒に
再溶解し調製するのが好ましい。また、塗布液にギ酸、
酢酸等のカルボン酸の添加、ごく微量の水分の添加が効
果を上げる場合もある。Usable solvents include alcohols having 1 to 20 carbon atoms, aromatic hydrocarbons such as benzene, toluene, and xylene;
Saturated hydrocarbons such as n-hexane and kerosene, esters such as ethyl acetate, butyl acetate and butyl acetoacetate, ketones such as acetone, methyl ethyl ketone and acetylacetone, β-diketones, ethyl ether, butyl ether, methyl cellulosolve, ethyl Cellulosolve, dioxane, ethers of tetrahydrofuran, etc. can be used singly or in combination of two or more. In order to improve the film-forming properties of the coating solution, it is preferable to prepare the coating solution by evaporating the solvent after the reaction between the tin compound and the tin fluoride compound, and then redissolving it in a solvent suitable for coating, such as ethyl acetate. In addition, formic acid,
Addition of a carboxylic acid such as acetic acid or addition of a very small amount of water may be effective in some cases.
本発明の組成物中には、SnFn(OR)、、、SnF
(OH)(OR)z、 SnFz(OH)(OR)、
[SnF(OR−)、)zOlSnCIF(OR)z、
(Rとm、 n、 l、 oは前記の通り)等の化合物
が生成しているものと推定される。In the composition of the present invention, SnFn(OR), , SnF
(OH)(OR)z, SnFz(OH)(OR),
[SnF(OR-),)zOlSnCIF(OR)z,
It is presumed that compounds such as (R, m, n, l, and o are as described above) are generated.
このように調製した組成物を塗布する方法としては、ス
ピンナー法、スプレー法、浸漬引上げ法。Methods for applying the composition prepared in this way include a spinner method, a spray method, and a dipping and pulling method.
刷毛塗り法などの通常の塗布技術が使用可能であるが、
大きな基材を大量に処理できる点で浸漬引上げ法が好ま
しい。この場合、所望する膜圧に応じて塗布液の濃度及
び引き上げ速度を調整する。Although conventional application techniques such as brush application can be used,
The immersion-pulling method is preferable because it allows large substrates to be treated in large quantities. In this case, the concentration of the coating liquid and the pulling speed are adjusted depending on the desired film pressure.
こうして基板上に塗布を行なった後、50〜150℃で
10分〜1時間乾燥を行ない、ついで大気又は酸素雰囲
気下400〜600℃で3分〜30分焼成することによ
り、基板上に透明導電膜を形成することができる。−回
の処理で充分な膜厚、導電性等が得られない場合には、
同様の処理をくり返し行なうことにより、改善すること
ができる。After coating the substrate in this way, it is dried at 50 to 150°C for 10 minutes to 1 hour, and then baked at 400 to 600°C for 3 to 30 minutes in the air or oxygen atmosphere to form a transparent conductive material on the substrate. A film can be formed. - If sufficient film thickness, conductivity, etc. cannot be obtained after two treatments,
Improvements can be made by repeating similar processing.
実施例1
第1表に示すSn(OR)、、 SnC1rl(OR)
4−n(n=1−3)の10%n−ヘキサン溶液に、n
−ヘキサンに懸濁させたSnF4を第1表に示す量で室
温でゆっくり加えた後、30分間加熱還流を行ない1次
に溶媒を蒸発した後、酢酸エチルを加え、加熱溶解し、
不溶物を濾別し、淡黄色透明な溶液を得た。その溶液に
、グラス基板を浸漬し、引き上げ速度20■/分で塗布
、大気中で15分間乾燥後、さらに150℃で15分間
の乾燥を行ない、最後に、500℃で、30分間焼成を
行なった。このように形成された被膜の第1表に示すそ
れぞれの物性を調べた。Example 1 Sn(OR) shown in Table 1, SnC1rl(OR)
In a 10% n-hexane solution of 4-n (n = 1-3), n
- Slowly add SnF4 suspended in hexane in the amount shown in Table 1 at room temperature, heat under reflux for 30 minutes, first evaporate the solvent, then add ethyl acetate and dissolve by heating,
Insoluble materials were filtered off to obtain a pale yellow, transparent solution. A glass substrate was immersed in the solution, applied at a pulling rate of 20 μ/min, dried in the air for 15 minutes, further dried at 150°C for 15 minutes, and finally baked at 500°C for 30 minutes. Ta. The physical properties of the films thus formed as shown in Table 1 were investigated.
実施例2
オクチル酸錫13.70 gを酢酸エチル45aJ、ア
セチルアセトン5−に溶解し、還流した後に、第2表に
示す種々のフッ化錫化合物を加え、さらに還流した後に
、以下実施例1と同様に処理と試験を行なった。結果も
併せて第2表中に示す。Example 2 13.70 g of tin octylate was dissolved in 45 aJ of ethyl acetate and 5 - of acetylacetone, and after refluxing, various tin fluoride compounds shown in Table 2 were added, and after further refluxing, the following Example 1 was prepared. Processing and testing were carried out in the same manner. The results are also shown in Table 2.
実施例3
錫アセチルアセトンのイソプロピルアルコール溶液に第
3表に示す種々のフッ化錫化合物を加え。Example 3 Various tin fluoride compounds shown in Table 3 were added to a solution of tin acetylacetone in isopropyl alcohol.
還流した後に、以下実施例1と同様に処理と試験を行な
った。結果も併せて第3表中に示す。After refluxing, the following treatments and tests were performed in the same manner as in Example 1. The results are also shown in Table 3.
本発明の組成物は上に示したように、フッ化錫化合物の
添加により、7 X 102〜2X103Ω/口程度と
、良好な透明性と強度を有する酸化錫被膜を与える。As shown above, the composition of the present invention provides a tin oxide coating having good transparency and strength of about 7×10 2 to 2×10 3 Ω/mouth by adding a tin fluoride compound.
さらに添加するフッ化錫化合物の量はフッ素に換算して
、F/S口重量比で0.01〜10.0%と少量でよく
、焼付は時に発生する腐蝕性のフッ素化合物の発生が少
なく、実用上の有利性を有する。Furthermore, the amount of tin fluoride compound added can be as small as 0.01 to 10.0% in F/S mouth weight ratio in terms of fluorine, and the generation of corrosive fluorine compounds that sometimes occur during baking is minimized. , has practical advantages.
Claims (1)
−ジケトン錯体のうちの少くとも1種とSn−F結合を
有する2価または4価のフッ化錫化合物と、溶媒からな
り、フッ素含有率がF/Sn重量比で0.01〜10.
0%である透明導電性被膜形成組成物。 2、特許請求の範囲第1項に記載の組成物であって、2
価または4価の錫アルコキシドは、有機酸錫、錫β−ジ
ケトン錯体がSn(OR)_2(Rは低級アルキル基、
以下同じ)、Sn(OR)_4、SnCl_n(OR)
_4_−_n(n=1〜3)、SnCl(OH)(OR
)_2、SnCl_2(OH)(OR);▲数式、化学
式、表等があります▼;Sn(A−A)_2(A−Aは
置換または無置換のβ−ジケトン、以下同じ)からなる
群から選ばれるものである透明導電性被膜形成組成物。 3、特許請求の範囲第2項に記載の組成物であって、S
n−F結合を有する4価の錫化合物がSnF_4、Sn
F_n(OR)_4_−_n(Rは低級アルキル基、以
下同じ、n=1−3)、SnCl_mF_n(OR)_
(_4_−_m_−_n_)(1≦m<4、1≦n<4
でかつm+n<4)、SnF_2(A−A)_2、Sn
F_2(OOCR)_2、SnF_nR_(_4_−_
n_)(n=1〜3)からなる群から選ばれるものであ
る透明導電性被膜形成組成物。 4、特許請求の範囲第1〜3項のいずれかの項に記載の
組成物であって、溶媒が、炭素原子数1〜20のアルコ
ール、エステル、ケトン、β−ジケトン、エーテル、飽
和炭化水素、芳香族炭化水素またはこれらの混合物であ
る透明導電性被膜形成組成物。[Claims] Monovalent, divalent or tetravalent tin alkoxide, organic acid tin, tin β
- consists of at least one type of diketone complex, a divalent or tetravalent tin fluoride compound having an Sn-F bond, and a solvent, and has a fluorine content of 0.01 to 10.0 in F/Sn weight ratio.
0% transparent conductive film forming composition. 2. The composition according to claim 1, comprising: 2.
The valent or tetravalent tin alkoxide is an organic acid tin, a tin β-diketone complex is Sn(OR)_2 (R is a lower alkyl group,
Same hereafter), Sn(OR)_4, SnCl_n(OR)
_4_-_n (n=1 to 3), SnCl(OH)(OR
)_2, SnCl_2(OH)(OR); ▲There are mathematical formulas, chemical formulas, tables, etc.▼; From the group consisting of Sn(A-A)_2 (A-A is a substituted or unsubstituted β-diketone, the same applies hereinafter) A transparent conductive film-forming composition that is selected. 3. The composition according to claim 2, comprising S
Tetravalent tin compounds with n-F bonds are SnF_4, Sn
F_n(OR)_4_-_n (R is a lower alkyl group, the same applies hereinafter, n = 1-3), SnCl_mF_n(OR)_
(_4_-_m_-_n_) (1≦m<4, 1≦n<4
and m+n<4), SnF_2(A-A)_2, Sn
F_2(OOCR)_2, SnF_nR_(_4_-_
A transparent conductive film-forming composition selected from the group consisting of n_) (n=1 to 3). 4. The composition according to any one of claims 1 to 3, wherein the solvent is an alcohol, ester, ketone, β-diketone, ether, or saturated hydrocarbon having 1 to 20 carbon atoms. , an aromatic hydrocarbon, or a mixture thereof.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10773586A JPS62267476A (en) | 1986-05-13 | 1986-05-13 | Composition for forming transparent electrically conductive coated film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10773586A JPS62267476A (en) | 1986-05-13 | 1986-05-13 | Composition for forming transparent electrically conductive coated film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62267476A true JPS62267476A (en) | 1987-11-20 |
Family
ID=14466621
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10773586A Pending JPS62267476A (en) | 1986-05-13 | 1986-05-13 | Composition for forming transparent electrically conductive coated film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62267476A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5024991A (en) * | 1987-07-31 | 1991-06-18 | Mitsubishi Kinzoku Kabushiki Kaisha | Composition using Schiff base copper complex for preparing compound metal oxides |
US5314534A (en) * | 1991-07-20 | 1994-05-24 | Th. Goldschmidt Ag | Preparation and method for coating glass vessels |
JP2007500287A (en) * | 2003-07-28 | 2007-01-11 | デ・ノラ・エレートローディ・ソチエタ・ペル・アツィオーニ | Electrode for electrochemical process and method of manufacturing the same |
-
1986
- 1986-05-13 JP JP10773586A patent/JPS62267476A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5024991A (en) * | 1987-07-31 | 1991-06-18 | Mitsubishi Kinzoku Kabushiki Kaisha | Composition using Schiff base copper complex for preparing compound metal oxides |
US5314534A (en) * | 1991-07-20 | 1994-05-24 | Th. Goldschmidt Ag | Preparation and method for coating glass vessels |
JP2007500287A (en) * | 2003-07-28 | 2007-01-11 | デ・ノラ・エレートローディ・ソチエタ・ペル・アツィオーニ | Electrode for electrochemical process and method of manufacturing the same |
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