JPH0121107B2 - - Google Patents
Info
- Publication number
- JPH0121107B2 JPH0121107B2 JP56117192A JP11719281A JPH0121107B2 JP H0121107 B2 JPH0121107 B2 JP H0121107B2 JP 56117192 A JP56117192 A JP 56117192A JP 11719281 A JP11719281 A JP 11719281A JP H0121107 B2 JPH0121107 B2 JP H0121107B2
- Authority
- JP
- Japan
- Prior art keywords
- tin
- indium
- glass substrate
- composition
- lactate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 16
- 239000011521 glass Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 9
- NGCDGPPKVSZGRR-UHFFFAOYSA-J 1,4,6,9-tetraoxa-5-stannaspiro[4.4]nonane-2,3,7,8-tetrone Chemical compound [Sn+4].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O NGCDGPPKVSZGRR-UHFFFAOYSA-J 0.000 claims description 4
- XALNPQXSWUMLQE-UHFFFAOYSA-K 2-hydroxypropanoate;indium(3+) Chemical compound [In+3].CC(O)C([O-])=O.CC(O)C([O-])=O.CC(O)C([O-])=O XALNPQXSWUMLQE-UHFFFAOYSA-K 0.000 claims description 4
- LKEDUJPRSZGTHZ-UHFFFAOYSA-H indium(3+);oxalate Chemical compound [In+3].[In+3].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O LKEDUJPRSZGTHZ-UHFFFAOYSA-H 0.000 claims description 4
- SKEZDZQGPKHHSH-UHFFFAOYSA-J 2-hydroxypropanoate;tin(4+) Chemical compound [Sn+4].CC(O)C([O-])=O.CC(O)C([O-])=O.CC(O)C([O-])=O.CC(O)C([O-])=O SKEZDZQGPKHHSH-UHFFFAOYSA-J 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- YJGJRYWNNHUESM-UHFFFAOYSA-J triacetyloxystannyl acetate Chemical compound [Sn+4].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O YJGJRYWNNHUESM-UHFFFAOYSA-J 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- 150000002472 indium compounds Chemical class 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 150000003606 tin compounds Chemical class 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- JVTAAEKCZFNVCJ-UHFFFAOYSA-M Lactate Chemical compound CC(O)C([O-])=O JVTAAEKCZFNVCJ-UHFFFAOYSA-M 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/27—Oxides by oxidation of a coating previously applied
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
- Manufacturing Of Electric Cables (AREA)
Description
【発明の詳細な説明】
本発明は、導電性被膜の成膜法さらに詳しくは
酸化インジウムを主体とする導電性被膜の成膜法
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a conductive film, and more particularly to a method for forming a conductive film mainly containing indium oxide.
ガラス基板上への導電性被膜の成膜法として、
真空蒸着法、スパツタ法、CVD法、スプレー法、
塗布法等が従来から知られているが、真空蒸着
法、スパツタ法では量産化が困難で、かつ、製造
価格が高くなる欠点を有しており、また、CVD
法、スプレー法、塗布法等は大量の溶媒を使用す
るため安全性、分解ガスの処理、液の管理等の諸
問題を解決しなければならない。 As a method of forming a conductive film on a glass substrate,
Vacuum deposition method, sputtering method, CVD method, spray method,
Coating methods have been known for a long time, but vacuum evaporation and sputtering methods have the drawbacks of being difficult to mass produce and increasing manufacturing costs.
Since the method, spray method, coating method, etc., use a large amount of solvent, various problems such as safety, treatment of cracked gas, and liquid management must be solved.
本発明は、前記公知の成膜法の欠点を改良した
安全かつ容易な導電性被膜の成膜法を提供するこ
とを目的とする。 An object of the present invention is to provide a safe and easy method for forming a conductive film, which improves the drawbacks of the above-mentioned known film forming methods.
本発明者等は前記目的を達成すべく鋭意研究の
結果、高温に加熱したガラス基板面に、粉末有機
金属組成物を吹付けることにより、均質かつ、一
様な厚みの金属酸化物被膜が形成されることを見
出し本発明を完成した。 As a result of intensive research to achieve the above object, the present inventors have found that by spraying a powdered organometallic composition onto the surface of a glass substrate heated to a high temperature, a metal oxide film with a homogeneous and uniform thickness is formed. The present invention was completed based on this discovery.
本発明は、高温のガラス基板表面に、気流中に
おいて、
(a) 粉末の、乳酸インジウム及び／又は蓚酸イン
ジウム
と、
(b) 粉末の、蓚酸スズ、乳酸スズ及び酢酸スズか
らなる群より選ばれた一種以上
とからなる組成物を接触せしめることを特徴とす
る導電性被膜の成膜法である。 The present invention provides a method for applying powder selected from the group consisting of (a) powdered indium lactate and/or indium oxalate, and (b) powdered tin oxalate, tin lactate, and tin acetate, onto the surface of a high-temperature glass substrate in an air flow. This is a method for forming a conductive film, which is characterized by bringing a composition comprising at least one of the above into contact with each other.
本発明において、粉末有機インジウム化合物と
して室温下において固体である有機インジウム化
合物のいずれをも使用しうるが、乳酸インジウ
ム、蓚酸インジウム等を使用するのが、合成の容
易さ、化合物の安定性等から好ましい。 In the present invention, any organic indium compound that is solid at room temperature can be used as the powdered organic indium compound, but indium lactate, indium oxalate, etc. are preferably used from the viewpoint of ease of synthesis and stability of the compound. preferable.
また、粉末有機スズ化合物としては、スズの蓚
酸塩、乳酸塩、酢酸塩等が使用でき、ドープ剤と
して使用される。ドープ剤としてのスズの使用量
は、インジウム１原子に対し、スズ0.01〜0.3の
原子比で使用出来るが、0.05〜0.15の原子比が好
ましい。 Further, as the powdered organic tin compound, tin oxalate, lactate, acetate, etc. can be used, and are used as a doping agent. The amount of tin to be used as a doping agent can be 0.01 to 0.3 atomic ratio per indium atom, preferably 0.05 to 0.15.
使用する粉末の粒径は10μ以下が好ましく、望
ましくは、1μ以下の粉末が更に適している。 The particle size of the powder used is preferably 10 μm or less, and preferably 1 μm or less.
本発明において、前記粉末有機インジウム化合
物と、粉末有機スズ化合物とからなる組成物中に
一定量の空気を吹込み浮遊せしめ、該組成物粉末
を含有する気流を、あらかじめ400〜650℃の温度
に加熱せしめたガラス基板表面に一定時間吹付け
ることにより、酸化インジウムを主体とする導電
性被膜が該ガラス基板表面に形成される。ガラス
基板の温度は、使用する化合物の種類により異な
るが、500〜600℃が好ましい。また、吹付け時間
を調整することにより、任意の膜厚および表面抵
抗値を得ることができる。 In the present invention, a certain amount of air is blown into and suspended in the composition consisting of the powdered organic indium compound and the powdered organic tin compound, and the air flow containing the composition powder is heated to a temperature of 400 to 650°C in advance. By spraying on the heated glass substrate surface for a certain period of time, a conductive film mainly composed of indium oxide is formed on the glass substrate surface. The temperature of the glass substrate varies depending on the type of compound used, but is preferably 500 to 600°C. Further, by adjusting the spraying time, any film thickness and surface resistance value can be obtained.
本発明は、簡単な操作で均質かつ、一様な厚み
の導電性被膜を容易に形成し得る導電性被膜の成
膜法を提供するものであり、その産業的意義は大
きい。 The present invention provides a method for forming a conductive film that can easily form a conductive film having a homogeneous and uniform thickness with simple operations, and has great industrial significance.
以下、本発明を実施例によりさらに詳しく説明
する。ただし、本発明は下記実施例に限定される
ものではない。 Hereinafter, the present invention will be explained in more detail with reference to Examples. However, the present invention is not limited to the following examples.
実施例 １
ホツトプレート上に５cm×５cmのアルカリガラ
スを置きガラスの表面温度を550℃に保持した後、
5μ以下に粉砕した乳酸インジウムと乳酸スズと
のIn／Sn＝10／１の混合組成物中に１／minの
速度で空気を吹込み導管により加熱された前記ガ
ラス基板上に10分間吹付けた。Example 1 After placing a 5 cm x 5 cm alkali glass on a hot plate and maintaining the surface temperature of the glass at 550°C,
Air was blown at a rate of 1/min into a mixed composition of In/Sn = 10/1 of indium lactate and tin lactate pulverized to 5μ or less, and was blown for 10 minutes onto the glass substrate heated by a conduit. .
得られた被膜は、透明で固く表面抵抗値は50
Ω／sqであつた。 The resulting film is transparent, hard, and has a surface resistance value of 50.
It was Ω/sq.
実施例 ２
粉砕された蓚酸インジウムと蓚酸スズとのIn／
sn＝10／１の混合組成物中に1.5／minの速度
で空気を吹込み、600℃の表面温度に加熱された
ガラス基板上に３分間吹付けた。Example 2 In/of crushed indium oxalate and tin oxalate
Air was blown into the mixed composition of sn=10/1 at a rate of 1.5/min for 3 minutes onto a glass substrate heated to a surface temperature of 600°C.
得られた被膜は透明で固く表面抵抗値は、60
Ω／sqであつた。 The resulting film was transparent, hard, and had a surface resistance of 60
It was Ω/sq.
Claims (1)
ジウム と、 (b) 粉末の、蓚酸スズ、乳酸スズ及び酢酸スズか
らなる群より選ばれた一種以上 とからなる組成物を接触せしめることを特徴とす
る導電性被膜の成膜法。 ２ ガラス基板の表面温度が400〜650℃である特
許請求の範囲第１項記載の成膜法。 ３ スズ原子のインジウム原子に対する比が0.01
〜0.3である組成物を用いる特許請求の範囲第１
項記載の成膜法。 ４ 組成物を気流中に浮遊分散せしめ、加熱され
たガラス基板上に吹付ける特許請求の範囲第１項
記載の成膜法。[Claims] 1. A group consisting of (a) powdered indium lactate and/or indium oxalate, and (b) powdered tin oxalate, tin lactate, and tin acetate, on the surface of a high-temperature glass substrate in an air flow. 1. A method for forming a conductive film, which comprises bringing into contact a composition comprising one or more selected materials. 2. The film forming method according to claim 1, wherein the surface temperature of the glass substrate is 400 to 650°C. 3 The ratio of tin atoms to indium atoms is 0.01
Claim 1 using a composition that is ~0.3
Film formation method described in section. 4. The film forming method according to claim 1, wherein the composition is suspended and dispersed in an air stream and sprayed onto a heated glass substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11719281A JPS5820754A (en) | 1981-07-28 | 1981-07-28 | Film-forming method of electrically conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11719281A JPS5820754A (en) | 1981-07-28 | 1981-07-28 | Film-forming method of electrically conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5820754A JPS5820754A (en) | 1983-02-07 |
| JPH0121107B2 true JPH0121107B2 (en) | 1989-04-19 |
Family
ID=14705676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11719281A Granted JPS5820754A (en) | 1981-07-28 | 1981-07-28 | Film-forming method of electrically conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5820754A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2584392B1 (en) * | 1985-07-03 | 1992-02-14 | Saint Gobain Vitrage | TREATMENT OF THIN FILMS OF METAL OXIDE OR METAL WITH A VIEW TO MODIFYING THEIR CHARACTERISTICS |
| FR2576324B1 (en) * | 1985-01-22 | 1989-10-27 | Saint Gobain Vitrage | POWDER BASED ON INDIUM FORMIA FOR THE FORMATION OF A THIN LAYER ON A SUBSTRATE, PARTICULARLY IN GLASS, ITS PREPARATION METHOD AND METHOD FOR FORMING A LAYER FROM SUCH A POWDER |
| DE4124137C1 (en) * | 1991-07-20 | 1992-10-01 | Th. Goldschmidt Ag, 4300 Essen, De | |
| US6380101B1 (en) * | 2000-04-18 | 2002-04-30 | International Business Machines Corporation | Method of forming patterned indium zinc oxide and indium tin oxide films via microcontact printing and uses thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5227165A (en) * | 1975-08-21 | 1977-03-01 | Paper Converting Machine Co | Business form substack processor for making balanced stack |
| JPS5319013A (en) * | 1976-08-05 | 1978-02-21 | Fujitsu Ltd | Writing circuit for magnetic memory apparatus |
| JPS5663844A (en) * | 1979-10-31 | 1981-05-30 | Nippon Sheet Glass Co Ltd | Forming method of metal oxide coat |
-
1981
- 1981-07-28 JP JP11719281A patent/JPS5820754A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5227165A (en) * | 1975-08-21 | 1977-03-01 | Paper Converting Machine Co | Business form substack processor for making balanced stack |
| JPS5319013A (en) * | 1976-08-05 | 1978-02-21 | Fujitsu Ltd | Writing circuit for magnetic memory apparatus |
| JPS5663844A (en) * | 1979-10-31 | 1981-05-30 | Nippon Sheet Glass Co Ltd | Forming method of metal oxide coat |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5820754A (en) | 1983-02-07 |
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