JPH01156538U - - Google Patents

Info

Publication number
JPH01156538U
JPH01156538U JP5209888U JP5209888U JPH01156538U JP H01156538 U JPH01156538 U JP H01156538U JP 5209888 U JP5209888 U JP 5209888U JP 5209888 U JP5209888 U JP 5209888U JP H01156538 U JPH01156538 U JP H01156538U
Authority
JP
Japan
Prior art keywords
laser
thin film
reactive gas
solid thin
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5209888U
Other languages
English (en)
Japanese (ja)
Other versions
JPH073632Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988052098U priority Critical patent/JPH073632Y2/ja
Publication of JPH01156538U publication Critical patent/JPH01156538U/ja
Application granted granted Critical
Publication of JPH073632Y2 publication Critical patent/JPH073632Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP1988052098U 1988-04-20 1988-04-20 レーザｃｖｄ装置 Expired - Lifetime JPH073632Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988052098U JPH073632Y2 (ja) 1988-04-20 1988-04-20 レーザｃｖｄ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988052098U JPH073632Y2 (ja) 1988-04-20 1988-04-20 レーザｃｖｄ装置

Publications (2)

Publication Number Publication Date
JPH01156538U true JPH01156538U (enrdf_load_stackoverflow) 1989-10-27
JPH073632Y2 JPH073632Y2 (ja) 1995-01-30

Family

ID=31278107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988052098U Expired - Lifetime JPH073632Y2 (ja) 1988-04-20 1988-04-20 レーザｃｖｄ装置

Country Status (1)

Country Link
JP (1) JPH073632Y2 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02260527A (ja) * 1989-03-31 1990-10-23 Nec Corp レーザｃｖｄ方法およびレーザｃｖｄ装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6369979A (ja) * 1986-09-11 1988-03-30 Nec Corp レ−ザ利用薄膜形成装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6369979A (ja) * 1986-09-11 1988-03-30 Nec Corp レ−ザ利用薄膜形成装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02260527A (ja) * 1989-03-31 1990-10-23 Nec Corp レーザｃｖｄ方法およびレーザｃｖｄ装置

Also Published As

Publication number Publication date
JPH073632Y2 (ja) 1995-01-30

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