JPH01152788A - Manufacture of semiconductor laser - Google Patents
Manufacture of semiconductor laserInfo
- Publication number
- JPH01152788A JPH01152788A JP31353687A JP31353687A JPH01152788A JP H01152788 A JPH01152788 A JP H01152788A JP 31353687 A JP31353687 A JP 31353687A JP 31353687 A JP31353687 A JP 31353687A JP H01152788 A JPH01152788 A JP H01152788A
- Authority
- JP
- Japan
- Prior art keywords
- reflecting film
- bar
- semiconductor laser
- reflective film
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000003776 cleavage reaction Methods 0.000 claims abstract description 15
- 230000007017 scission Effects 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 239000007791 liquid phase Substances 0.000 abstract description 2
- 238000000059 patterning Methods 0.000 abstract 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000005253 cladding Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体レーザの製造方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a method for manufacturing a semiconductor laser.
従来、半導体レーザは発光部となる活性層を含む多層構
造及び電極１１を形成した後、第３図（１）のように、
一定共振器長で端面へき開を行ない発光部１３を数個有
する半導体レーザ群（以下バーと称す、）を形成する。Conventionally, in a semiconductor laser, after forming a multilayer structure including an active layer which becomes a light emitting part and an electrode 11, as shown in FIG. 3(1),
By performing facet cleavage with a constant cavity length, a semiconductor laser group (hereinafter referred to as a bar) having several light emitting parts 13 is formed.
この後、このバーのへき開面、すなわち発光面全面に端
面反射率を変えるために、反射膜１２をコーティングし
、横割を行ない第３図（２）のように−個発光部１３を
持つ半導体レーザを作製していた。After that, in order to change the end face reflectance on the cleavage plane of this bar, that is, on the entire light emitting surface, a reflective film 12 is coated and the bar is laterally divided to form a semiconductor laser having individual light emitting parts 13 as shown in FIG. was being created.
［発明が解決しようとする問題点〕
上述した従来の製造方法は端面反射率を変えるためにバ
ーのへき開面全面に反射膜をコーティングしているので
、個々の半導体レーザに分割する横割を行なう際コーテ
ィングした反射膜に直接ストレスが加わり反射膜が一部
剥れたり、クラックが入り要求特性を満足できず、また
、半導体レーザ外観を悪くするという欠点がある。[Problems to be Solved by the Invention] In the conventional manufacturing method described above, a reflective film is coated on the entire cleavage surface of the bar in order to change the end face reflectance. Direct stress is applied to the coated reflective film, causing some parts of the reflective film to peel off or cracks, making it impossible to satisfy the required characteristics, and also deteriorating the appearance of the semiconductor laser.
本発明はストライプ状発光部を内包する活性層を含む多
層構造体をストライプ状にへき開してストライプ状の発
光部が複数並列に連らなったバーを形成する工程と、バ
ーの各発光部を有する各半導体レーザの境界部分に相当
するへき開面領域をマスクで覆って、バーへき開面に反
射膜を形成する工程と、バーから各半導体レーザを分割
する工程とを少なくとも備えた構成となっている。The present invention includes a process of cleaving a multilayer structure including an active layer containing striped light emitting parts into stripes to form a bar in which a plurality of striped light emitting parts are connected in parallel, The structure includes at least the steps of forming a reflective film on the bar cleavage plane by covering the cleavage plane region corresponding to the boundary portion of each semiconductor laser with a mask, and dividing each semiconductor laser from the bar. .
本発明によればバー状態のへき開面、すなわち発光面に
反射膜２をコーティングする時、横割を行なう部分に反
射膜２をコーティングしないようにレジストでマスクし
、発光面に反射膜２をコーティングすることにより、各
半導体レーザに分割する横割の際、直接、反射膜２にス
トレスが加わらないため、反射膜２が剥れたりクラック
が入ることがなくなる。この結果要求特性が満足でき、
かつ、半導体レーザ外観をよくするという利点を有して
いる。According to the present invention, when coating the reflective film 2 on the bar-shaped cleavage plane, that is, the light emitting surface, the reflective film 2 is masked with a resist so that the reflective film 2 is not coated on the portion where the horizontal cleavage is performed, and the reflective film 2 is coated on the light emitting surface. As a result, stress is not directly applied to the reflective film 2 during horizontal division to separate the semiconductor lasers, so that the reflective film 2 is prevented from peeling or cracking. As a result, the required characteristics can be satisfied,
Moreover, it has the advantage of improving the appearance of the semiconductor laser.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図（１）は、本発明の第１の実施例のバーの斜視図
であり、第１図（２）は第１図（１）のバーを分割し得
られた半導体レーザの斜視図である。FIG. 1(1) is a perspective view of a bar according to a first embodiment of the present invention, and FIG. 1(2) is a perspective view of a semiconductor laser obtained by dividing the bar of FIG. 1(1). It is.
発光部３となる活性層をバンドギャップの大きいクラッ
ド層で挟んだダブルへテロ構造を含んでいる多層構造体
を液相成長法等で作製した後、多層構造体をストライプ
状にへき開して発光部を１つづつ含んだ複数の半導体レ
ーザが並列に連なったバーを形成する。バーのへき開面
は半導体レーザの発光面となる。次にバーの各半導体レ
ーザ間の境界部分に相当するへき開面領域に反射膜がコ
ーティングしないようにレジストでマスクし、スパッタ
またはプラズマＣＶＤにより反射膜２を発光面に形成し
、レジストを取除くことにより第１図（１）のバーを得
る。この後反射膜２の付いていない部分で分割して第１
図（２）の半導体レーザを得る。この実施例では、各半
導体レーザが境界部分のへき開面には反射膜がないので
個々の半導体レーザに分割するための横割の際、直接、
反射膜２にストレスが加わらないため、反射膜２がｋＩ
れなりクラックが入ることがなくなる。A multilayer structure containing a double heterostructure in which an active layer, which will become the light emitting part 3, is sandwiched between cladding layers with a large band gap is fabricated using a liquid phase growth method, etc., and then the multilayer structure is cleaved into stripes to emit light. A plurality of semiconductor lasers, each including one section, are connected in parallel to form a bar. The cleavage plane of the bar becomes the light emitting surface of the semiconductor laser. Next, the cleavage plane region corresponding to the boundary between each semiconductor laser of the bar is masked with a resist so as not to be coated with a reflective film, a reflective film 2 is formed on the light emitting surface by sputtering or plasma CVD, and the resist is removed. Thus, the bar shown in FIG. 1 (1) is obtained. After this, it is divided at the part where the reflective film 2 is not attached and the first
The semiconductor laser shown in Figure (2) is obtained. In this example, since there is no reflective film on the cleavage plane at the boundary of each semiconductor laser, when horizontally dividing the semiconductor lasers into individual semiconductor lasers, the
Since no stress is applied to the reflective film 2, the reflective film 2
There will be no more cracks.
従って、要求特性が満足でき、かつ、半導体レーザ外観
をよくするという利点がある。Therefore, there are advantages in that the required characteristics can be satisfied and the appearance of the semiconductor laser is improved.
尚、ストライプ状発光部の構造は上記実施例では明記し
なかったが、通常用いられる埋込ストライプ構造、プレ
ーナストライプ構造、オキサイドストライプ構造等どの
ような構造を用いてもよい。Although the structure of the striped light emitting portion was not specified in the above embodiment, any structure such as a commonly used buried stripe structure, planar stripe structure, or oxide stripe structure may be used.
第２図（１）は本発明の第２の実施例のバーの斜視図で
あり、第２図（２）は第２図（１）のバーを分割し得ら
れた半導体レーザの斜視図である。バーのへき開面に反
射膜２を形成するところまでは第１の実施例と同じであ
る９反射ｐＩＡ２を形成した後、さらに、反射膜２をマ
スクとして横割位置を明確にするとために硫酸系でエツ
チングし第２図（２）のバーを得る。FIG. 2(1) is a perspective view of a bar according to a second embodiment of the present invention, and FIG. 2(2) is a perspective view of a semiconductor laser obtained by dividing the bar of FIG. 2(1). be. After forming the 9-reflection pIA2, which is the same as in the first embodiment up to the step of forming the reflective film 2 on the cleavage plane of the bar, a sulfuric acid-based film is further applied to clarify the horizontal cleavage position using the reflective film 2 as a mask. Etching is performed to obtain the bar shown in FIG. 2 (2).
この実施例では、バーに分割するための横割の際、直接
、反射膜２にストレスが加わらないため、反射膜２が剥
れたり、クラックが発生することがなくなる。従って、
要求特性は満足でき、がつ、半導体レーザ外観をよくす
るという利点がある。In this embodiment, stress is not directly applied to the reflective film 2 during horizontal splitting to divide it into bars, so that the reflective film 2 does not peel or crack. Therefore,
It has the advantage of satisfying the required characteristics and improving the appearance of the semiconductor laser.
以上説明したように本発明はバーの発光面に反射膜を形
成する際、横割を行なう部分をコーティングしないよう
にパターニングし反射膜を形成することにより、バーを
個々の半導体レーザに分割する横割の時、反射膜に直接
ストレスが加わらないため反射膜が剥れたり、クラック
が発生することはなくなる。As explained above, when forming a reflective film on the light-emitting surface of the bar, the present invention is patterned so as not to coat the part where the horizontal division is to be performed, and forms a reflective film. At this time, stress is not directly applied to the reflective film, so the reflective film does not peel off or crack.
従って、要求特性が満足でき、かつ、半導体レーザ外観
をよくするという効果がある。Therefore, the required characteristics can be satisfied and the appearance of the semiconductor laser can be improved.
第１図（１）、第２図（１）は本発明の製造工程途中の
半導体レーザバーの斜視図、第１図（２）、第２図（２
）は本発明により作製された半導体レーザの斜視図、第
３図（１）は従来の製造工程途中の半導体レーザバーの
斜視図、第３図（２）は従来の製造方法で作製した半導
体ｌ／−ザの斜視図である。
１．１・・・電極、２，１２・・・反射膜、３，１３・
・・発光部。FIGS. 1(1) and 2(1) are perspective views of a semiconductor laser bar in the middle of the manufacturing process of the present invention, FIGS. 1(2) and 2(2).
) is a perspective view of a semiconductor laser manufactured by the present invention, FIG. 3 (1) is a perspective view of a semiconductor laser bar in the middle of a conventional manufacturing process, and FIG. 3 (2) is a perspective view of a semiconductor laser manufactured by a conventional manufacturing method. - FIG. 1.1... Electrode, 2,12... Reflective film, 3,13...
...Light emitting part.
Claims (1)
体をストライプ状にへき開してストライプ状の発光部が
複数並列に連らなったバーを形成する工程と、バーの各
発光部を１つづつ有する各半導体レーザの境界部分に相
当するへき開面領域をマスクで覆って、バーへき開面に
反射膜を形成する工程と、バーを分割して発光部を１つ
含んで個々の半導体レーザとする工程とを少なくとも備
えていることを特徴とする半導体レーザの製造方法。A step of cleaving a multilayer structure including an active layer containing striped light emitting parts into stripes to form a bar in which a plurality of striped light emitting parts are connected in parallel, and a step of cleaving each light emitting part of the bar one by one. A step of covering the cleavage plane region corresponding to the boundary of each semiconductor laser with a mask and forming a reflective film on the bar cleavage plane, and a step of dividing the bar into individual semiconductor lasers each including one light emitting part. A method for manufacturing a semiconductor laser, comprising at least the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31353687A JPH01152788A (en) | 1987-12-10 | 1987-12-10 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31353687A JPH01152788A (en) | 1987-12-10 | 1987-12-10 | Manufacture of semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01152788A true JPH01152788A (en) | 1989-06-15 |
Family
ID=18042500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31353687A Pending JPH01152788A (en) | 1987-12-10 | 1987-12-10 | Manufacture of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01152788A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014221915A1 (en) | 2013-10-28 | 2015-04-30 | Hamamatsu Photonics K.K. | Quantum Cascade Lasers |
-
1987
- 1987-12-10 JP JP31353687A patent/JPH01152788A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014221915A1 (en) | 2013-10-28 | 2015-04-30 | Hamamatsu Photonics K.K. | Quantum Cascade Lasers |
| JP2015088517A (en) * | 2013-10-28 | 2015-05-07 | 浜松ホトニクス株式会社 | Quantum cascade laser |
| US9276381B2 (en) | 2013-10-28 | 2016-03-01 | Hamamatsu Photonics K.K. | Quantum cascade laser |
| DE102014221915B4 (en) | 2013-10-28 | 2023-12-28 | Hamamatsu Photonics K.K. | Quantum cascade laser |
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