JPH01145329A - Oxide superconductor - Google Patents
Oxide superconductorInfo
- Publication number
- JPH01145329A JPH01145329A JP62304134A JP30413487A JPH01145329A JP H01145329 A JPH01145329 A JP H01145329A JP 62304134 A JP62304134 A JP 62304134A JP 30413487 A JP30413487 A JP 30413487A JP H01145329 A JPH01145329 A JP H01145329A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- temperature
- sputtering
- oxide superconductor
- lasrcuo4
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 18
- 230000005292 diamagnetic effect Effects 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims abstract description 9
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 7
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 7
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 15
- 238000004544 sputter deposition Methods 0.000 abstract description 12
- 230000005291 magnetic effect Effects 0.000 abstract description 11
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000035699 permeability Effects 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 239000010409 thin film Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000011888 foil Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910001179 chromel Inorganic materials 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、例えば磁気浮上列車及び粒子加速機器等の磁
気コイル部分や電子デバイス及びジョセフソンコンピュ
ータの回路基板等に使用されるバルク状又は薄膜状から
なる酸化物超電導体に関するものである。Detailed Description of the Invention [Field of Industrial Application] The present invention is applicable to bulk or thin films used, for example, in magnetic coil parts of magnetic levitation trains and particle accelerators, electronic devices, and circuit boards of Josephson computers. The present invention relates to an oxide superconductor consisting of
〔先行技術及び発明が解決しようとする問題点〕現在、
超電導体はＮｂ、ＧｅやＮｂ、Ｓｎに代表される金属系
超電導体が実用化されているが、その臨界温度（Ｔｃ）
はたかだか２３．２Ｋ程度までである。[Prior art and problems to be solved by the invention] Currently,
Metallic superconductors such as Nb, Ge, Nb, and Sn are in practical use, but their critical temperature (Tc)
It is up to about 23.2K at most.
しかし乍ら、近時希土類元素、アルカリ土類元素及び酸
化銅の混合物からなる酸化物系超電導体はその臨界温度
が金属系超電導体と比べ著しく高いものであることが発
表（例えば東京大学工学部グループは米国物理学会で９
０Ｋを達成したと発表）され、冷媒として高価で極低温
（４，２Ｋ＝ −２６８，８℃）の液体ヘリウムに換え
、安価な液体窒素で充分使用可能となった。それ故、こ
の酸化物系超電導体の各種分野における実用化の目途に
大きな前進が見られた。これらの発表に伴い、上記利用
分野におけるバルク状又は薄膜状の酸化物超電導体にお
いて、その臨界温度（Ｔｃ）をさらに常温にまで高め、
また反磁性帯磁率の向上を計ろうとする研究が盛んに行
われているが、いまだ充分に高い臨界温度（Ｔｃ）及び
反磁性帯磁率を有する酸化物超電導体が得られていない
。However, it has recently been announced that oxide superconductors made of a mixture of rare earth elements, alkaline earth elements, and copper oxide have a significantly higher critical temperature than metal superconductors (for example, a group from the University of Tokyo Faculty of Engineering 9 in the American Physical Society
It was announced that 0K was achieved), and it became possible to use inexpensive liquid nitrogen as a refrigerant instead of expensive and extremely low temperature (4.2K = -268.8℃) liquid helium. Therefore, great progress has been made in the prospect of practical application of this oxide-based superconductor in various fields. Along with these announcements, the critical temperature (Tc) of bulk or thin film oxide superconductors in the above application fields is further increased to room temperature,
Further, although many studies are being conducted to improve the diamagnetic susceptibility, an oxide superconductor having a sufficiently high critical temperature (Tc) and diamagnetic susceptibility has not yet been obtained.
本発明は酸化物超電導体において特に反磁性帯磁率が高
いと共に、臨界温度（Ｔｃ）を得ることを目的とする。An object of the present invention is to obtain particularly high diamagnetic susceptibility and critical temperature (Tc) in an oxide superconductor.
本発明によれば、Ｌａ−Ｓｒ−Ｎｂ−０系組成からなる
膜体または板体であり、その厚み方向においてＬａ、Ｓ
ｒおよびＮｂのそれぞれの含有量に勾配を有する臨界温
度（Ｔｃ）が９０に以上で、反磁性帯磁率が９．２Ｋの
ＮｂＯ値の１０χを越える酸化物超電温体が提供される
。According to the present invention, it is a film body or a plate body consisting of a La-Sr-Nb-0 system composition, and in the thickness direction, La, S
There is provided an oxide superelectric body having a critical temperature (Tc) of 90 or higher and a diamagnetic susceptibility exceeding 10χ of the NbO value of 9.2K, which has a gradient in the content of each of r and Nb.
即ち、Ｎｂ金属上にＬａＳｒＣｕ０４を、またはＬａＳ
ｒＣｕＯ。That is, LaSrCu04 on Nb metal or LaS
rCuO.
上にＮｂをスパッタして、ＬａＳｒＣｕＯａのＣｕが略
完全にＮｂに置換される過程で、超電導体の厚み方向に
おいてＬａ、ＳｒおよびＮｂのそれぞれの含有量に勾配
を有することが必要である。これにより臨界温度（ＴＣ
）が高く、特に反磁性帯磁率も９．２ＫのＮｂＯ値の１
０χを越え、約２０％以上、好ましくは約３０％以上が
安定して得られる酸化物超電導体が得られる。このよう
な超電導体を得るための製造方法としてはスパッタされ
る基板の角度を基板に入射するスパッタビームに対して
５°〜４５°に傾けることによりＮｂ基板上又はＬａＳ
ｒＣｕＯｎ （又はこれに代りＹＢａｚＣｕ、０．）に
デポジットが良好な結晶性をもって形成され、又基板の
Ｎｂの拡散、ＬａＳｒＣｕＯ４上にスパッタされたＮｂ
デポジットの拡散により上記の如き各金属元素がそれぞ
れ勾配を有する超電導体相を安定して得られる。In the process in which Nb is sputtered onto the superconductor and Cu in LaSrCuOa is almost completely replaced with Nb, it is necessary to have a gradient in the content of each of La, Sr, and Nb in the thickness direction of the superconductor. This allows the critical temperature (TC
) is high, especially the diamagnetic susceptibility is 1 of the NbO value of 9.2K.
An oxide superconductor can be obtained in which the oxidation ratio exceeds 0χ and is stably obtained by about 20% or more, preferably about 30% or more. A manufacturing method for obtaining such a superconductor is to tilt the sputtered substrate at an angle of 5° to 45° with respect to the sputtering beam incident on the substrate.
Deposits are formed on rCuOn (or alternatively YBazCu, 0.0) with good crystallinity, and diffusion of Nb on the substrate, Nb sputtered on LaSrCuO4.
By diffusion of the deposit, a superconductor phase having a gradient of each metal element as described above can be stably obtained.
〔実施例１〕
０．０３μｍ厚のＮｂ金属板上にＬａＳｒＣｕＯ４化合
物をスパッタして薄膜を形成した。成膜は液体窒素槽内
で直流高速マグネトロンスパッタリングによりＡｒ電圧
、１〜０．４Ｔｏｒｒ 、電圧２００〜３００Ｖ、電流
３００〜４００ｍＡで行い、この際スパッタされる基板
の角度を基板に入射するスパッタービームに対して４５
″に傾けた。スパッタリングターゲット（ＬａＳｒＣｕ
Ｏ４）は９００℃で８時間アニールした後使用した。ス
パッタ中は７００℃Ｘ２０分加熱し、その後４００℃／
ｈｒで室温まで急冷することにより特性を安定化させた
。膜厚は２０μｍであった。抵抗の測定は四端子法を用
いた。電極はＩｎ（インジウム）を超音波ハンダで付け
た。[Example 1] A thin film was formed by sputtering a LaSrCuO4 compound onto a 0.03 μm thick Nb metal plate. Film formation was performed in a liquid nitrogen tank by direct current high speed magnetron sputtering at an Ar voltage of 1 to 0.4 Torr, a voltage of 200 to 300 V, and a current of 300 to 400 mA. against 45
sputtering target (LaSrCu
O4) was used after annealing at 900° C. for 8 hours. During sputtering, heat to 700℃ for 20 minutes, then heat to 400℃/
The properties were stabilized by rapid cooling to room temperature for 30 minutes. The film thickness was 20 μm. The resistance was measured using the four-terminal method. The electrodes were attached with In (indium) using ultrasonic solder.
測定電流は３０ｍＡ／ｃ＋＋＋”であり時折り変化させ
た。The measurement current was 30 mA/c+++'' and was changed from time to time.
サンプルの測温はＡｕ−０，０７χ、Ｆｅ−クロメル熱
電対で行い、冷媒として液体ヘリウムおよび液体窒素を
用いた。室温以上の加熱には温風を吹付けた。The temperature of the sample was measured using an Au-0.07χ, Fe-chromel thermocouple, and liquid helium and liquid nitrogen were used as coolants. Hot air was blown for heating above room temperature.
室温から液体ヘリウムまでの冷却速度は〜３００に／ｈ
ｒで行った。反磁性帯磁率測定には誘導ブリッジ法を用
いた。サンプルを温風により３３５Ｋまで加速した後冷
却した。冷却と同時に抵抗が急激に減少し、第１図に示
す温度に対する抵抗変化曲線及び第２図に示す帯磁率の
温度特性曲線が得られた。The cooling rate from room temperature to liquid helium is ~300/h
I went with r. The inductive bridge method was used to measure diamagnetic susceptibility. The sample was accelerated to 335 K with hot air and then cooled. The resistance rapidly decreased upon cooling, and the resistance change curve versus temperature shown in FIG. 1 and the temperature characteristic curve of magnetic susceptibility shown in FIG. 2 were obtained.
これから理解されるように、このサンプルのオンセント
温度は少なくとも２８０に以上でオフセット温度は約１
００にである。すなわち、約１００Ｋ（−１７３℃）で
抵抗が零（０）となる超電導薄膜が得られた。As will be seen, the on-cent temperature for this sample is at least 280 degrees and the offset temperature is approximately 1.
It's at 00. That is, a superconducting thin film whose resistance became zero (0) at about 100 K (-173° C.) was obtained.
さらに反磁性帯磁率は９．２ＫのＮｂの約３０χ強であ
った。Furthermore, the diamagnetic susceptibility was approximately 30χ or more than that of Nb at 9.2K.
〔実施例２〕
Ｌａ−Ｓｒ−Ｎｂ−０からなるバルク体を高真空装置内
で作成する。厚み２＋ｎｍ Ｘ幅５ＩＩＩＩ１１×長さ
１０ｍｍのＬａＳｒＣｕ０４（又はＹＢａｚＣｕ３（ｌ
ｒ）が基板として用いられた。ペルジャーを１０− ’
Ｔｏｒｒまで減圧し、Ｎｂ （純度９９．９％）をＬａ
ＳｒＣｕＯｎ、（又はＹＢａｚＣｕｓＯｙ）基板上にＡ
ｒ電圧０．５Ｔｏｒｒでスパッタした。この際スパッタ
される基板の角度を基板に入射するスパッタービームに
対して４５＠に傾けた。基板の温度は９００℃としスパ
ッタ速度は〜ｌＯＯ人／ｍｉｎであった。スパッタ後ペ
ルジャー内で基板を７００℃で３０分保持した。Ｎｂの
組成はスパッタ時間で調整した。スパッタ後、チャンバ
ー内の内壁はＣｕ膜で覆われていた。このことはＮｂが
Ｃｕと置換して、ＬａＳｒＣｕ０４基板中からＣｕが飛
散したものと考えられる。測定は実施例１と同様に行っ
た結果、第３図に示すように抵抗は少なくともオンセッ
ト温度（Ｔｃｏ）が２８０に以上の室温領域で鋭く減少
し始め、反磁性帯磁率も第４図に示子如＜ ９．２Ｋの
Ｎｂの値の３０χ強を示していた。[Example 2] A bulk body made of La-Sr-Nb-0 is produced in a high vacuum apparatus. LaSrCu04 (or YBazCu3 (l
r) was used as a substrate. Pelger 10-'
The pressure was reduced to Torr, and Nb (purity 99.9%) was
A on SrCuOn, (or YBazCusOy) substrate
Sputtering was performed at an r voltage of 0.5 Torr. At this time, the angle of the substrate to be sputtered was set to 45@ with respect to the sputter beam incident on the substrate. The temperature of the substrate was 900° C., and the sputtering rate was ~100 people/min. After sputtering, the substrate was held at 700° C. for 30 minutes in a Pelger. The composition of Nb was adjusted by sputtering time. After sputtering, the inner wall of the chamber was covered with a Cu film. This is considered to be because Nb replaced Cu and Cu was scattered from the LaSrCu04 substrate. Measurements were carried out in the same manner as in Example 1, and as a result, as shown in Figure 3, the resistance began to decrease sharply at least in the room temperature region where the onset temperature (Tco) was 280 or higher, and the diamagnetic susceptibility also decreased as shown in Figure 4. It showed a value of Nb of just over 30χ with a value of <9.2K.
〔実施例３〕
厚さ２００μｌのＮｂ箔上にＬａＳｒＣｕＯ，化合物を
スパッタした。スパッタされる基板は前記実施例と同様
基板に入射するスパッタビームに対して４５°に傾けた
。成膜は直流高速マグネトロンスパッタリングにより直
径１００ｍｍのＬａＳｒＣｕＯ，ターゲットを用いて成
膜速度を５０００人／１ｍ１ｎで液体窒素で冷却された
チャンバー内で行う。膜厚は〜１５μｍで膜形状は４ｍ
ｍ角である。スパッタリングは高Ａｒ圧で０．５〜０．
７Ｔｏｒｒ 、基板温度は１２００℃である。スパッタ
後、１２００℃から４００℃まで５０℃／ｍｉｎで急冷
し、２Ｔｏｒｒの酸素中で５分保持した。測定は実施例
１と同様に行った。測定時の電流は３０ｍＡ／ｃｍ”で
あった。[Example 3] LaSrCuO compound was sputtered onto a 200 μl thick Nb foil. The substrate to be sputtered was tilted at 45° with respect to the sputtering beam incident on the substrate, as in the previous example. Film formation is performed by direct current high speed magnetron sputtering using a LaSrCuO target with a diameter of 100 mm at a film formation rate of 5000 people/1 m1 in a chamber cooled with liquid nitrogen. The film thickness is ~15 μm and the film shape is 4 m.
It is m square. Sputtering is performed at a high Ar pressure of 0.5 to 0.
The temperature was 7 Torr, and the substrate temperature was 1200°C. After sputtering, it was rapidly cooled from 1200° C. to 400° C. at a rate of 50° C./min and held in oxygen at 2 Torr for 5 minutes. Measurements were performed in the same manner as in Example 1. The current during measurement was 30 mA/cm''.
組成分析をＥＰＭＡ及びＩＭＡ（Ｉｏｎ−Ｍｉｃｒｏ−
Ａｎａｌｙｚｅｒ）で行った。Ｌａ及びＳｒの量は大き
く変化していないが、Ｃｕの存在は検出されなかった。Composition analysis was performed using EPMA and IMA (Ion-Micro-
Analyzer). Although the amounts of La and Sr did not change significantly, the presence of Cu was not detected.
ＩＭＡの分析からＮｂ箔よりＮｂ酸化物までの厚み方向
においてＬａ、Ｓｒ及びＮｂ含有量の勾配が存在してい
ることが分かった。Ｎｂ箔上のＬａＳｒＣｕＯ，の組成
はＬａＳｒＣｕＯ薄膜となった。Ｎｂ箔からこの薄膜内
へＮｂが拡散することはＬａ−Ｓｒ−Ｎｂ−０薄膜とな
った。Ｎｂ箔からこの薄膜内へＮｂが拡散することによ
り膜内のＣｕがＮｂに置換され、酸素八面体の中央のＣ
ｕは置き換わっている。IMA analysis revealed that a gradient of La, Sr, and Nb contents existed in the thickness direction from the Nb foil to the Nb oxide. The composition of LaSrCuO on the Nb foil was a LaSrCuO thin film. The diffusion of Nb from the Nb foil into this thin film resulted in a La-Sr-Nb-0 thin film. As Nb diffuses from the Nb foil into this thin film, Cu in the film is replaced with Nb, and the C in the center of the oxygen octahedron is
u has been replaced.
また、同時にＬａ及びＳｒに於いても含有量が厚み方向
に勾配を示している。表面にはＬａｚＳｒ、Ｎｂ５０１
゜の組成からなる層が形成されていた。At the same time, the contents of La and Sr also show a gradient in the thickness direction. LazSr, Nb501 on the surface
A layer having a composition of ° was formed.
上記サンプルについて温度に対する抵抗変化及び帯磁率
を測定し、第５図及び第６図に示した。The resistance change and magnetic susceptibility with respect to temperature were measured for the above sample, and the results are shown in FIGS. 5 and 6.
温風により加熱を停止した直後、抵抗は急激に落ち始め
、２５０にで抵抗が零（０）になった。このサンプルの
負の帯磁率は９．２ＫでのＮｂの帯磁率の３３ｚであり
マイスナー効果が３２０にでもまだ零に達していない事
が確認された。Immediately after stopping the heating with warm air, the resistance began to drop rapidly, and at 250, the resistance became zero (0). The negative magnetic susceptibility of this sample was 33z of the magnetic susceptibility of Nb at 9.2K, and it was confirmed that the Meissner effect had not yet reached zero even at 320K.
第１図は本発明の実施例１における薄ｎりの抵抗温度特
性図、第２図はこの実施例１の帯磁率の温度特性図、第
３図は実施例２Ｋおけるバルク体の抵抗温度特性図、第
４図はこの実施例２の帯磁率の温度特性図、第５図は実
施例３における薄膜の抵抗温度特性図及び第６図はこの
実施例３における薄膜の帯磁率の温度特性図である。Fig. 1 is a resistance-temperature characteristic diagram of thin n-shaped material in Example 1 of the present invention, Fig. 2 is a temperature characteristic diagram of magnetic susceptibility of this Example 1, and Fig. 3 is a resistance-temperature characteristic diagram of a bulk body in Example 2K. 4 is a temperature characteristic diagram of the magnetic susceptibility of Example 2, FIG. 5 is a resistance temperature characteristic diagram of the thin film in Example 3, and FIG. 6 is a temperature characteristic diagram of the magnetic susceptibility of the thin film in Example 3. It is.
Claims (1)
あり、その厚み方向においてＬａ，ＳｒおよびＮｂのそ
れぞれの含有量に勾配を有する臨界温度（Ｔｃ）が９０
Ｋ以上で、反磁性帯磁率が９．２ＫのＮｂの１０％を越
える酸化物超電導体。It is a film or plate consisting of a La-Sr-Nb-O system composition, and has a critical temperature (Tc) of 90% with a gradient in the content of La, Sr, and Nb in the thickness direction.
An oxide superconductor whose diamagnetic susceptibility exceeds 10% of Nb at temperatures above K and 9.2K.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62304134A JPH01145329A (en) | 1987-11-30 | 1987-11-30 | Oxide superconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62304134A JPH01145329A (en) | 1987-11-30 | 1987-11-30 | Oxide superconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01145329A true JPH01145329A (en) | 1989-06-07 |
Family
ID=17929450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62304134A Pending JPH01145329A (en) | 1987-11-30 | 1987-11-30 | Oxide superconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01145329A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5722314A (en) * | 1994-11-14 | 1998-03-03 | Matsushita Electric Industrial Co., Ltd. | Automatic bread producing machine |
| US10568331B2 (en) | 2016-05-13 | 2020-02-25 | Zojirushi Corporation | Auxiliary material accommodating container and automatic bread making machine |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6428232A (en) * | 1987-04-13 | 1989-01-30 | Tetsuya Ogushi | Oxide superconducting material and production thereof |
| JPS6476902A (en) * | 1987-05-18 | 1989-03-23 | Tetsuya Ogushi | Perovskite-type superconductor and superconducting member |
-
1987
- 1987-11-30 JP JP62304134A patent/JPH01145329A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6428232A (en) * | 1987-04-13 | 1989-01-30 | Tetsuya Ogushi | Oxide superconducting material and production thereof |
| JPS6476902A (en) * | 1987-05-18 | 1989-03-23 | Tetsuya Ogushi | Perovskite-type superconductor and superconducting member |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5722314A (en) * | 1994-11-14 | 1998-03-03 | Matsushita Electric Industrial Co., Ltd. | Automatic bread producing machine |
| US6058831A (en) * | 1994-11-14 | 2000-05-09 | Matsushita Electric Industrial Co., Ltd. | Automatic bread producing machine |
| US10568331B2 (en) | 2016-05-13 | 2020-02-25 | Zojirushi Corporation | Auxiliary material accommodating container and automatic bread making machine |
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