JPH01145160U - - Google Patents
Info
- Publication number
- JPH01145160U JPH01145160U JP4129488U JP4129488U JPH01145160U JP H01145160 U JPH01145160 U JP H01145160U JP 4129488 U JP4129488 U JP 4129488U JP 4129488 U JP4129488 U JP 4129488U JP H01145160 U JPH01145160 U JP H01145160U
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- semiconductor substrate
- semiconductor
- growth layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 2
Description
第１図は本考案半導体レーザ装置の要部を示す
模式図、第２図は動作電流と光出力の出射部にお
ける温度依存性を示す特性図、第３図は半導体基
板の厚みと温度上昇の関係を示す特性図、である
。
１……ヒートシンク、２……半導体レーザビー
ムチツプ、３……半導体基板、４……成長層、６
ａ〜６ｃ……第１〜第３の出射部。
Fig. 1 is a schematic diagram showing the main parts of the semiconductor laser device of the present invention, Fig. 2 is a characteristic diagram showing the temperature dependence of the operating current and optical output at the emission part, and Fig. 3 is a diagram showing the dependence of the operating current and optical output on the temperature at the emission part. It is a characteristic diagram showing the relationship. DESCRIPTION OF SYMBOLS 1...Heat sink, 2...Semiconductor laser beam chip, 3...Semiconductor substrate, 4...Growth layer, 6
a to 6c...first to third emission parts.
Claims (1)
成長層の複数箇所に個別に設けられ各々独立して
レーザビームを出射する出射部、を備えた半導体
レーザビームチツプと、該レーザビームチツプを
上記半導体基板側から保持するヒートシンクと、
からなり、上記半導体基板の厚みを約７０μｍ以
下としたことを特徴とする半導体レーザ装置。 A semiconductor laser beam chip comprising a semiconductor substrate, a growth layer formed on the substrate, and an emission section that is individually provided at a plurality of locations on the growth layer and each independently emits a laser beam, and the laser beam chip. a heat sink held from the semiconductor substrate side;
A semiconductor laser device comprising: the semiconductor substrate having a thickness of about 70 μm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988041294U JP2538450Y2 (en) | 1988-03-29 | 1988-03-29 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988041294U JP2538450Y2 (en) | 1988-03-29 | 1988-03-29 | Semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01145160U true JPH01145160U (en) | 1989-10-05 |
| JP2538450Y2 JP2538450Y2 (en) | 1997-06-18 |
Family
ID=31267735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988041294U Expired - Lifetime JP2538450Y2 (en) | 1988-03-29 | 1988-03-29 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2538450Y2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5127076A (en) * | 1974-08-30 | 1976-03-06 | Hitachi Ltd | HANDOT AIREEZA SOCHI |
| JPS6242592A (en) * | 1985-08-20 | 1987-02-24 | Matsushita Electric Ind Co Ltd | Semiconductor laser array device and manufacture of same |
-
1988
- 1988-03-29 JP JP1988041294U patent/JP2538450Y2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5127076A (en) * | 1974-08-30 | 1976-03-06 | Hitachi Ltd | HANDOT AIREEZA SOCHI |
| JPS6242592A (en) * | 1985-08-20 | 1987-02-24 | Matsushita Electric Ind Co Ltd | Semiconductor laser array device and manufacture of same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2538450Y2 (en) | 1997-06-18 |
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