JPH01143276A - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JPH01143276A JPH01143276A JP62300924A JP30092487A JPH01143276A JP H01143276 A JPH01143276 A JP H01143276A JP 62300924 A JP62300924 A JP 62300924A JP 30092487 A JP30092487 A JP 30092487A JP H01143276 A JPH01143276 A JP H01143276A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- type
- sphere
- region
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims abstract description 3
- 238000000605 extraction Methods 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 238000002310 reflectometry Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 3
- 239000007791 liquid phase Substances 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
- 238000005253 cladding Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、発光ダイオードに関し、特に平行光線を取り
出せる発光ダイオード構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a light emitting diode, and more particularly to a light emitting diode structure that can extract parallel light rays.
光通信用に使用される発光ダイオードは、発光出力の光
フアイバー内への入力を効率的且つ容易に行なえること
が望ましい。しかし、従来の発光ダイオードは第３図に
示すように出射面２５及び出射面に対向する裏面２６は
平坦であった。このため第３図に示す如く、発光ダイオ
ード２１の出射面２５上に球レンズ２２を接着すること
により、はぼ平行に近いビーム２３を実現し、光ファイ
バーとの結合を容易ならしむる方法が採られていた。It is desirable for light emitting diodes used for optical communications to be able to efficiently and easily input light emitting output into an optical fiber. However, in the conventional light emitting diode, as shown in FIG. 3, the light emitting surface 25 and the back surface 26 facing the light emitting surface are flat. For this reason, as shown in FIG. 3, a method has been adopted in which a ball lens 22 is bonded onto the output surface 25 of the light emitting diode 21 to realize a nearly parallel beam 23 and facilitate coupling with an optical fiber. It was getting worse.
上述した従来の方法は、発光ダイオード上に球レンズを
直接に接着している為、球レンズの中心と発光ダイオー
ド中の発光領域２４が同一光軸上に位置するように、球
レンズの位置を１０μｍ程度以下の精度に制御すること
が必要であり、作業歩留を低下させたり、位置合わせの
為に、長時間を要するという欠点を有していた。In the conventional method described above, the ball lens is bonded directly onto the light emitting diode, so the position of the ball lens must be adjusted so that the center of the ball lens and the light emitting region 24 in the light emitting diode are located on the same optical axis. It is necessary to control the method to an accuracy of about 10 μm or less, which has disadvantages such as lowering the work yield and requiring a long time for positioning.
本発明になる発光ダイオードは、発光領域か凹面鏡の焦
点の位置になるように、光出力取り出し面の反対側の面
を曲面状に加工し且つその表面を反射率の良好な金属で
被覆する事により、容易に平行ビーみを得ることのでき
る構造を有している。The light emitting diode according to the present invention has the surface opposite to the light output extraction surface processed into a curved shape so that the light emitting region is located at the focal point of the concave mirror, and the surface is coated with a metal having good reflectance. This structure allows parallel beams to be easily obtained.
次に、本発明について図面を参照して説明する。第１図
は、本発明の一実施例の縦断面図である。１０１はｎ型
ＩｎＰ基板、１０２はｎ型ＩｎＰクラッド層、１０３は
ｐ型Ｉ ｎ ０．５５Ｇ ａ ０−４５Ａ Ｓ ｏ、３
Ｐ Ｏ，７活性層、１０４はｐ型ＴｎＰクラッド層、
１０５はｎ型Ｉ ｎ Ｏ，４Ｇ ａ ０，６ Ａ Ｓ
０−２Ｐ０．８キャップ層であり、各層１０２〜１０５
は液相もしくは気相成長法によりＩｎＰ基板１０１上に
形成されている。１０６はｐ＋型型数散層あり、活性層
１０３内に直径２０μｍ程度の発光領域１０７を形成し
ている。１０８は反射防止膜、１０９．１１０はそれぞ
れｐ側及びｎ側の電極である。１１１は、ＩｎＰ基板面
に化学エツチングにより形成された球面状の領域である
。この構成において、発光領域１０７と球面１１１の先
端部１１２との距離ｅは球面１１１の曲率半径の１／２
になっている０本実施例においては、球面１１１の曲率
半径２００μｍ、距Ｍ１１３は１００μｍに加工されて
いる。このようにすれば、発光領域１０７は球面１１１
により構成される凹面鏡の焦点に位置することになる。Next, the present invention will be explained with reference to the drawings. FIG. 1 is a longitudinal sectional view of an embodiment of the present invention. 101 is an n-type InP substrate, 102 is an n-type InP cladding layer, 103 is a p-type In 0.55G a 0-45A So, 3
PO, 7 active layer, 104 p-type TnP cladding layer,
105 is n-type I n O, 4G a 0,6 A S
0-2P0.8 cap layer, each layer 102-105
is formed on the InP substrate 101 by liquid phase or vapor phase growth. Reference numeral 106 is a p+ type scattering layer, and a light emitting region 107 with a diameter of about 20 μm is formed in the active layer 103. 108 is an antireflection film, and 109 and 110 are p-side and n-side electrodes, respectively. Reference numeral 111 denotes a spherical region formed on the InP substrate surface by chemical etching. In this configuration, the distance e between the light emitting region 107 and the tip 112 of the spherical surface 111 is 1/2 of the radius of curvature of the spherical surface 111.
In this embodiment, the radius of curvature of the spherical surface 111 is 200 μm, and the distance M113 is 100 μm. In this way, the light emitting region 107 becomes the spherical surface 111
It is located at the focal point of a concave mirror constructed by .
上記実施例では基板裏面が凸状になるように球面を形成
し、積層構造表面側から光を取り出す構造となっている
が、積層構造表面に球面を形成し、基板裏面側から光を
取り出す構造としてもよい、また、実施例では基板裏面
の一部領域のみが球面になっているが必要ならば基板裏
面全面を球面にしてもよい、この他、ステムにマウント
しやすい構造とする目的で、第２図に示すように基板１
０１に穴１２０を設けて、この穴１２０の底部に球面１
１１を設ける構造としてもよい。また、この球面は、球
面以外の曲面、例えば放物面、双曲面等としてもよい。In the above example, a spherical surface is formed so that the back surface of the substrate is convex, and light is extracted from the surface side of the laminated structure. Also, in the example, only a part of the back surface of the board is spherical, but if necessary, the entire back surface of the board may be made spherical.In addition, for the purpose of making the structure easy to mount on the stem, Substrate 1 as shown in FIG.
A hole 120 is provided in 01, and a spherical surface 1 is provided at the bottom of this hole 120.
11 may be provided. Moreover, this spherical surface may be a curved surface other than a spherical surface, such as a paraboloid or a hyperboloid.
発光領域のみに電流が流れる電流狭窄構造は、実施例で
は拡散層を設けたプレーナ型としたが、他の構造、例え
ばメサ構造等、どのような構造としても本発明は適用で
きる。Although the current confinement structure in which current flows only in the light emitting region is a planar type provided with a diffusion layer in the embodiment, the present invention can be applied to any other structure such as a mesa structure.
前記実施例の構造を採用することにより、発光領域によ
り放射された光は曲面上に付着させる電極により反射さ
れて平行光線となり、反射防止膜を通して出射面から外
部に取り出される。By employing the structure of the above embodiment, the light emitted by the light emitting region is reflected by the electrode attached on the curved surface to become parallel light beams, which are then extracted to the outside from the output surface through the antireflection film.
また、発光領域と球面先端の位置合わせは、通常のホト
リソグラフィーの技術により１〜２μｍの精度で容易に
実現可能であり、高い歩留で製造することができる。Further, alignment between the light emitting region and the spherical tip can be easily achieved with an accuracy of 1 to 2 μm using ordinary photolithography technology, and manufacturing can be performed with a high yield.
第１図、第２図は本発明の一実施例を示す縦断面図、第
３図は従来の技術になる発光ダイオードの一例を示す断
面図である。
１０１ ・−・ｎ型ＩｎＰ基板、１０２−・−ｎ型Ｉｎ
Ｐクラッド層、１０３−ｐ型Ｉ ｎ 、）、５５Ｇ ａ
、）、４５Ａ ｓＱ、２ Ｐｏ、８キャップ層、１０
６−＝ ｐ＋＋拡散領域、１０７・・・発光領域、１０
８・・・反射防止膜、１０９・・・ｐ側拡散領域、１０
７・・・発光領域、１０８・・・反射防止膜、１０９・
・・ｐ側電極、１１０・・・ｎ側電極、１１１・・・球
面、１１２・・・球面の先端、２１・・・発光ダイオー
ド、２２・・・球レンズ、２３・・・平行ビーム、２４
・・・発光領域、２５・・・出射面、２６・・・裏面。1 and 2 are longitudinal sectional views showing one embodiment of the present invention, and FIG. 3 is a sectional view showing an example of a conventional light emitting diode. 101...n-type InP substrate, 102-...-n-type In
P cladding layer, 103-p type I n , ), 55G a
), 45A sQ, 2 Po, 8 cap layers, 10
6-=p++ diffusion region, 107... light emitting region, 10
8... Antireflection film, 109... p-side diffusion region, 10
7... Light emitting region, 108... Antireflection film, 109.
...p-side electrode, 110...n-side electrode, 111...spherical surface, 112...tip of spherical surface, 21...light emitting diode, 22...spherical lens, 23...parallel beam, 24
. . . Light emitting area, 25 . . . Output surface, 26 . . . Back surface.
Claims (1)
記発光領域が凹面鏡の焦点の位置になるように、光出力
取り出し面の反対側の面の少くとも一部領域を曲面状に
加工し且つその表面を反射率の良好な金属で被覆したこ
とを特徴とする発光ダイオード。At least a light emitting region that emits light by current injection, and at least a part of the surface opposite to the light output extraction surface is processed into a curved shape so that the light emitting region is at the focal point of the concave mirror, and the surface thereof is curved. A light emitting diode characterized by being coated with a metal having good reflectivity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62300924A JPH01143276A (en) | 1987-11-27 | 1987-11-27 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62300924A JPH01143276A (en) | 1987-11-27 | 1987-11-27 | Light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01143276A true JPH01143276A (en) | 1989-06-05 |
Family
ID=17890767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62300924A Pending JPH01143276A (en) | 1987-11-27 | 1987-11-27 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01143276A (en) |
-
1987
- 1987-11-27 JP JP62300924A patent/JPH01143276A/en active Pending
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