JPH02234476A - Semiconductor light emitting diode and semiconductor light emitting diode array - Google Patents
Semiconductor light emitting diode and semiconductor light emitting diode arrayInfo
- Publication number
- JPH02234476A JPH02234476A JP1055329A JP5532989A JPH02234476A JP H02234476 A JPH02234476 A JP H02234476A JP 1055329 A JP1055329 A JP 1055329A JP 5532989 A JP5532989 A JP 5532989A JP H02234476 A JPH02234476 A JP H02234476A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- semiconductor light
- light
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000000605 extraction Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 abstract description 3
- 239000013307 optical fiber Substances 0.000 abstract description 3
- 239000000835 fiber Substances 0.000 description 22
- 238000005253 cladding Methods 0.000 description 8
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 125000005842 heteroatom Chemical group 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 239000000284 extract Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は光通信、光情報処理等における光源に関する．
〔従来の技術〕
光ファイバー通信の光源を目的とする半導体発光ダイオ
ードは、高輝度、ファイバー結合出力の大きいこと、低
電流駆動の可能なこと及び高信頼であることなどが重要
である．宇治等の報告によれば、発光部を円形メサ構遣
とし、積層面に垂直な方向に光を取り出す面型発光ダイ
オードにより、低電流で高いファイバー結合出力が得ら
れている（電子通信学会、信学技報 ＯＱＥＢ８４−９
８＜１９８４）Ｐ．１５−Ｐ．２０）．まなこの円形メ
サ構造を有した面発光型発光ダイオードは集積化が容易
で発光ダイオードアレーも林等によって試作されている
（昭和６３年電子情報通信学会春季全国大会講演集Ｃ−
３５５＞．〔発明が解決しようとする課題〕
面型発光ダイオードは基板面に対して垂直に光を取り出
すためにファイバーとのカップリングは容易であるが、
基板面とファイバーの軸方向が直交するためにモジュー
ルとしては大型になってしまうという欠点を有していた
。特に上記問題は高密度実装が要求される光並列伝送用
発光ダイオードアレイのモジュールで大きな問題となっ
ていた。また発光ダイオードアレイのモジュールにおい
てはファイバーアレイとの結合の調整が難しいという欠
点も有していた．
〔課題を解決するための手段〕
上記問題点を解決するなめに本発明は半導体基板上に、
発光に与る活性層を含む積層構造を備え、積層構造の一
部領域を発光領域とし、光を積層面に垂直な方向に取り
出す面型半導体発光ダイオードにおいて、前記半導体基
板裏面の前記発光領域と相対する位置に、前記半導体基
板面に対して４５度傾いたミラー面を有する構成とした
ものである．
また前記ミラー面を湾曲形状とすることにより高いファ
イバー結合出力が得られる。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a light source for optical communication, optical information processing, etc. [Prior Art] Semiconductor light emitting diodes intended as light sources for optical fiber communications must have high brightness, large fiber-coupled output, low current drive, and high reliability. According to a report by Uji et al., high fiber-coupled output can be obtained with low current by using a surface-type light-emitting diode with a circular mesa structure for the light-emitting part and emitting light in a direction perpendicular to the laminated surface (Institute of Electronics and Communication Engineers, IEICE technical report OQEB84-9
8<1984) P. 15-P. 20). Manako's surface-emitting light-emitting diode with a circular mesa structure is easy to integrate, and a light-emitting diode array was also prototyped by Hayashi et al.
355>. [Problem to be solved by the invention] Surface-type light emitting diodes are easy to couple with fibers because they extract light perpendicular to the substrate surface.
Since the substrate surface and the axial direction of the fiber are perpendicular to each other, the module has the disadvantage of being large. In particular, the above-mentioned problem has become a serious problem in light-emitting diode array modules for optical parallel transmission, which require high-density packaging. Another drawback of the light emitting diode array module was that it was difficult to adjust the coupling with the fiber array. [Means for Solving the Problems] In order to solve the above problems, the present invention provides a structure in which on a semiconductor substrate,
In a planar semiconductor light emitting diode that has a laminated structure including an active layer that participates in light emission, a part of the laminated structure is used as a light emitting region, and light is extracted in a direction perpendicular to the laminated surface, the light emitting region and the light emitting region on the back surface of the semiconductor substrate are provided. The configuration has a mirror surface inclined at 45 degrees with respect to the semiconductor substrate surface at an opposing position. Further, by forming the mirror surface into a curved shape, a high fiber coupling output can be obtained.
また前記ミラー面で反射後ミラー面に対向して設けた光
取り出し面を凸レンズ形状とすることによっても高いフ
ァイバー結合出力が得られる。Further, a high fiber coupling output can also be obtained by forming the light extraction surface provided opposite the mirror surface after reflection into a convex lens shape.
また半導体発光ダイオードをアレイ状に並べて発光ダイ
オードアレイが得られる．この発光ダイオードアレイに
おいては光の出射方向が半導体層の集積方向に対して垂
直となり、ファイバーアレイの軸合わせは基板面が固定
されているので調整が容易になる．
〔作用〕
面型発光ダイオードと光ファイバーの垂直結合について
はファイバーを近距離で直角に曲げる、ファイバーと発
光ダイオード間にミラーを置くなどの方向が考えられる
が、モジュールとして小型化出来、かつ信頼性と結合の
簡便さを実現することは極めて難しい．その中で本発明
による発光ダイオード構造は基板裏面にミラー面を作り
付けるという点で小型化と結合の簡便さを実現しており
、かつ端面発光型の半導体レーザダイオードを両方向に
反射させる手法として精力的研究されており（アブライ
ド フィジックス レターズ４６ （１９８５）ＰＬ．
１５〜１１７）良好な反射面がＲＩＢＥ（リアクティブ
イオン ビームエッチング）によって得られている。A light-emitting diode array can also be obtained by arranging semiconductor light-emitting diodes in an array. In this light emitting diode array, the direction of light emission is perpendicular to the direction in which the semiconductor layers are integrated, and alignment of the fiber array is easy because the substrate surface is fixed. [Function] Concerning vertical coupling between a surface-type light-emitting diode and an optical fiber, possible methods include bending the fiber at right angles at a short distance or placing a mirror between the fiber and the light-emitting diode. It is extremely difficult to achieve the simplicity of connection. Among these, the light emitting diode structure according to the present invention realizes miniaturization and ease of coupling by forming a mirror surface on the back surface of the substrate, and is also an effective method for reflecting edge-emitting semiconductor laser diodes in both directions. (Ablide Physics Letters 46 (1985) PL.
15-117) Good reflective surfaces have been obtained by RIBE (reactive ion beam etching).
〔実施例１〕
第１の実施例の半導体発光ダイオードの断面構造を第１
図に示す。ＩｎＰ基板１１上にｎ型ＩｎＰクラッド層１
２、ＩｎＧａＡｓＰ活性層１３、ｐ型ＩｎＰクラッド層
１４、ｐ型Ｉ ｎＧａＡｓＰコンタクト層１５を順次積
層した半導体発光ダイオード用ＤＨ（ダブルへテロ）構
造に内径２０μｍ、外径６０μｍの環状の溝１０を形成
し、渭に囲まれた円形メサ部２０を発光領域とした．基
板裏面にはメサ部２０と相対する位置に、基板面１１ａ
に対して４５度傾いた４５゜ミラー面２ｌを形成してい
る．ミラー面はＳｉ０２をマスクとしてＲＩＢＨにより
基板裏面をエッチングして形成されており、その表面は
極めて平坦に形成されている．発光領域で発生した光３
０は、ミラー面２１により進行方向を直角に曲げられ、
基板面１１ａに垂直な垂直光収り出し面２２を経て、端
面垂直光取り出し面に対向させて配置したファイバー２
３に結合される．
ミラーの反射ロスは極めて少なく実質上間題の無いこと
が確認された．また本実施例の半導体発光ダイオードに
ファイバーを固定して作製したモジュールは従来の基板
面に対し垂直に光を取り出す方式のモジュールに比べて
約１／２の厚さに小型化することができた．
〔実施例２〕
第２の実施例の半導体発光ダイオードの断面構造を第２
図に示す，ＩｎＰ基板１１上にｎ型ＩｎＰクラッド層１
２、ＩｎＧａＡｓＰ活性層１３、ｐ型ＩｎＰクラッド層
１４、ｐ型Ｉ ｎＧａＡｓＰコンタクト層１５を順次積
層した半導体発光ダイオード用ＤＨ（ダブルへテロ）構
造に内径２０μｍ、外径６０μｍの環状の溝１０を形成
し、溝に囲まれた円形メサ部２０を発光領域とした．基
板裏面にはメサ部と相対する位置に湾曲したミラー面３
１を形成している。ミラー面はＳ ｉ ０２をマスクと
してＲＩＢＥによりエッチングして第１図のミラー面と
同じに形成した後、その表面をＡｒのイオンビームエッ
チングにより凸面状に（基板内側から見ると凹面状）に
形成している。[Example 1] The cross-sectional structure of the semiconductor light emitting diode of the first example was
As shown in the figure. n-type InP cladding layer 1 on InP substrate 11
2. An annular groove 10 with an inner diameter of 20 μm and an outer diameter of 60 μm is formed in a DH (double hetero) structure for a semiconductor light emitting diode in which an InGaAsP active layer 13, a p-type InP cladding layer 14, and a p-type InGaAsP contact layer 15 are sequentially laminated. The circular mesa portion 20 surrounded by the water was set as the light emitting region. A substrate surface 11a is provided on the back surface of the substrate at a position facing the mesa portion 20.
It forms a 45° mirror surface 2l that is tilted 45° with respect to the mirror surface. The mirror surface is formed by etching the back surface of the substrate by RIBH using Si02 as a mask, and the surface is extremely flat. Light generated in the light emitting area 3
0, the direction of travel is bent at right angles by the mirror surface 21,
The fiber 2 is arranged so as to pass through the vertical light extraction surface 22 perpendicular to the substrate surface 11a and face the end face vertical light extraction surface.
Combined with 3. It was confirmed that the reflection loss of the mirror was extremely small and there was virtually no problem. In addition, the module manufactured by fixing the fiber to the semiconductor light emitting diode of this example was able to be made smaller to about 1/2 the thickness of a conventional module that extracts light perpendicular to the substrate surface. ．． [Example 2] The cross-sectional structure of the semiconductor light emitting diode of the second example was
As shown in the figure, an n-type InP cladding layer 1 is placed on an InP substrate 11.
2. An annular groove 10 with an inner diameter of 20 μm and an outer diameter of 60 μm is formed in a DH (double hetero) structure for a semiconductor light emitting diode in which an InGaAsP active layer 13, a p-type InP cladding layer 14, and a p-type InGaAsP contact layer 15 are sequentially laminated. The circular mesa portion 20 surrounded by the groove was used as a light emitting region. On the back side of the board, there is a curved mirror surface 3 facing the mesa part.
1 is formed. The mirror surface is etched by RIBE using S i 02 as a mask to form the same mirror surface as shown in Fig. 1, and then the surface is made convex (concave when viewed from inside the substrate) by Ar ion beam etching. are doing.
発光領域で発生した光がミラー面３１で反射し、垂直光
取り出し面を２２を経てファイバー２３に結合するのは
第１の実施例と同じであるが、本実施例ではミラー面が
湾曲しているため、発散した光３０ａも集光されて効率
良くファイバに結合する．ミラー面での反射ロスは極め
て少なくファイバー結合効率は約１ｄＢ向上した．〔実
施例３〕
第３の実施例の半導体発光ダイオードの断面構造を第３
図に示す，ＩｎＰ基板１１上に、ｎ型ＩｎＰクラッド層
１２、Ｉ ｎＧａＡｓＰ活性層１３、ｐ型ＩｎＰクラッ
ド層１４、ρ型Ｉ ｎＧａＡｓＰコンタクト層１５を順
次ｍ層した半導体発光ダイオード用ＤＨ（ダブルへテロ
）構造に内径２０μｍ、外径６０μｍの環状の溝１０を
形成し、溝に囲まれた円形メサ部２０を発光領域とした
．基板裏面にはメサ部と相対する位置に、基板面１１ａ
に対して４５度傾いた４５゜ミラー面２１を形成しいて
る。ミラー面は極めて平坦に形成されている．
ミラー面に対向した光取り出し面３２は、Ａｒのイオン
ビームエッチングにより球面状に加工されており、集光
作用があるため、第２の実施例と同様、集光効率が高く
ファイバー結合効率は約１ｄＢ向上した．
〔実施例４〕
第４の実施例の半導体発光ダイオードアレイの平面模式
図を第４図に示す．ＩｎＰ基板１１上に、ｎ型ＩｎＰク
ラッド層、ＩｎＧａＡｓＰ活性層、ｐ型１ｎＰクラッド
層、ｐ型１ ｎＧａＡｓＰコンタクト層を順次積層した
半導体発光ダイオード用ＤＨ（ダブルへテロ）Ｉ造に内
径２０μｍ、外径６０μｍの環状の溝を複数、並べて形
成し、面発光型ダイオードアレイとした。基板裏面には
、溝で囲まれた複数の発光領域２０と相対する位置に４
５゜ミラー面２１が形成されている。発光領域からの光
はミラー面で反射し、垂直光取り出し面を経てファイバ
ーアレイ３３に結合される。ミラー面の反射ロスは極め
て少なく実質上問題の無いことが確認された。また光軸
とファイバーアレイの軸合わせは基板面が固定されてい
るために一方向のみでよく従来に比べて非常に容易にな
った。The light generated in the light emitting region is reflected by the mirror surface 31 and coupled to the fiber 23 via the vertical light extraction surface 22, as in the first embodiment, but in this embodiment, the mirror surface is curved. Therefore, the divergent light 30a is also focused and efficiently coupled to the fiber. Reflection loss on the mirror surface was extremely low, and fiber coupling efficiency was improved by approximately 1 dB. [Example 3] The cross-sectional structure of the semiconductor light emitting diode of the third example was
As shown in the figure, a DH for semiconductor light emitting diode (double An annular groove 10 with an inner diameter of 20 μm and an outer diameter of 60 μm was formed in the structure, and a circular mesa portion 20 surrounded by the groove was used as a light emitting region. On the back side of the board, there is a board surface 11a at a position facing the mesa part.
A 45° mirror surface 21 is formed which is inclined at 45° with respect to the mirror surface. The mirror surface is extremely flat. The light extraction surface 32 facing the mirror surface is processed into a spherical shape by Ar ion beam etching and has a light condensing effect, so as in the second embodiment, the light condensing efficiency is high and the fiber coupling efficiency is approximately Improved by 1dB. [Example 4] FIG. 4 shows a schematic plan view of a semiconductor light emitting diode array of the fourth example. An n-type InP cladding layer, an InGaAsP active layer, a p-type 1nP cladding layer, and a p-type 1nGaAsP contact layer are sequentially laminated on an InP substrate 11 to form a DH (double hetero) I structure for semiconductor light emitting diodes with an inner diameter of 20 μm and an outer diameter. A plurality of 60 μm annular grooves were formed side by side to form a surface-emitting diode array. On the back side of the substrate, four light emitting regions 20 surrounded by grooves are located opposite to each other.
A 5° mirror surface 21 is formed. Light from the light emitting region is reflected by the mirror surface and coupled to the fiber array 33 via the vertical light extraction surface. It was confirmed that the reflection loss on the mirror surface was extremely small and there was virtually no problem. Furthermore, since the substrate surface is fixed, alignment of the optical axis and the fiber array only needs to be done in one direction, making it much easier than in the past.
本発明は以上説明したように半導体基板裏面の発光領域
に相対する部分にミラー面を設けているために発光ダイ
オードモジュールとして小型化することができ、またミ
ラーを基板面にモノリシックに形成してあるためにファ
イバーとの結合が容易になるという効果を有する。家な
本発明では集光ミラーや集光レンズをモノリシックに形
成することが可能であり、ファイバー結合効率を高める
という効果も併せて有する。As explained above, the present invention provides a mirror surface on the back surface of the semiconductor substrate in the portion facing the light emitting region, so it can be miniaturized as a light emitting diode module, and the mirror is monolithically formed on the substrate surface. This has the effect of making it easier to combine with fibers. According to the present invention, it is possible to monolithically form a condensing mirror and a condensing lens, and it also has the effect of increasing fiber coupling efficiency.
第１図は本発明の第１の実施例の断面図、第２図は本発
明の第２の実施例の断面図、第３図は本発明の・第３の
実施例の断面図、第４図は本発明の第４の実施例の平面
模式図をそれぞれ示す。
１１・・・ＩｎＰ基板、１２・・・ｎ型ＩｎＰクラッド
層、１３・−・ＩｎＧａＡｓ活性層、１ ４−ｐ型Ｉｎ
ｐクラッド層、１５・・・ｐ型ＩｎＧａＡｓＰコンタク
ト層、２０・・・発光領域、２１・・・４５°ミラー面
、２２・・・垂直光取り出し面、２３・・・ファイバー
、３１・・・ミラー面、３２・・・レンズ状に加工され
た光取り出し面、３３・・・ファイバーアレイ。1 is a cross-sectional view of a first embodiment of the present invention, FIG. 2 is a cross-sectional view of a second embodiment of the present invention, and FIG. 3 is a cross-sectional view of a third embodiment of the present invention. 4 each shows a schematic plan view of a fourth embodiment of the present invention. 11... InP substrate, 12... n-type InP cladding layer, 13... InGaAs active layer, 1 4-p-type In
p cladding layer, 15... p-type InGaAsP contact layer, 20... light emitting region, 21... 45° mirror surface, 22... vertical light extraction surface, 23... fiber, 31... mirror Surface, 32... Lens-shaped light extraction surface, 33... Fiber array.
Claims (4)
造を備え、積層構造の一部領域を発光領域とし、光を積
層面に垂直な方向に取り出す面型半導体発光ダイオード
において、前記半導体基板裏面の前記発光領域と相対す
る位置に、前記半導体基板面に対して４５度傾いたミラ
ー面を有することを特徴とする半導体発光ダイオード。(1) A planar semiconductor light emitting diode that has a laminated structure including an active layer that participates in light emission on a semiconductor substrate, a part of the laminated structure is used as a light emitting region, and light is extracted in a direction perpendicular to the laminated surface. A semiconductor light-emitting diode, comprising a mirror surface tilted at 45 degrees with respect to the semiconductor substrate surface at a position opposite to the light-emitting region on the back surface of the semiconductor substrate.
前記ミラー面を湾曲形状としたことを特徴とする半導体
発光ダイオード。(2) The semiconductor light emitting diode according to claim 1,
A semiconductor light emitting diode characterized in that the mirror surface has a curved shape.
前記ミラー面に対向して設けた光取り出し面を凸レンズ
状としたことを特徴とする半導体発光ダイオード。(3) The semiconductor light emitting diode according to claim 1,
A semiconductor light emitting diode characterized in that a light extraction surface provided opposite to the mirror surface is shaped like a convex lens.
イオードを１つの半導体基板上に複数個形成したことを
特徴とする半導体発光ダイオードアレイ。(4) A semiconductor light emitting diode array comprising a plurality of semiconductor light emitting diodes according to claim 1, 2 or 3 formed on one semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1055329A JPH02234476A (en) | 1989-03-07 | 1989-03-07 | Semiconductor light emitting diode and semiconductor light emitting diode array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1055329A JPH02234476A (en) | 1989-03-07 | 1989-03-07 | Semiconductor light emitting diode and semiconductor light emitting diode array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02234476A true JPH02234476A (en) | 1990-09-17 |
Family
ID=12995499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1055329A Pending JPH02234476A (en) | 1989-03-07 | 1989-03-07 | Semiconductor light emitting diode and semiconductor light emitting diode array |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02234476A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6381386B1 (en) | 1998-04-23 | 2002-04-30 | Nec Corporation | V-shaped optical coupling structure |
| JP2006013048A (en) * | 2004-06-24 | 2006-01-12 | Mitsubishi Electric Corp | Light emitting optical semiconductor element and light receiving optical semiconductor element |
| GB2421849A (en) * | 2004-11-22 | 2006-07-05 | Agilent Technologies Inc | Optoelectronic Module and Method of Making Such a Module |
| AT503027B1 (en) * | 2006-05-08 | 2007-07-15 | Austria Tech & System Tech | Printed circuit board element for multi-mode or single mode waveguide data transmission, has opto-electronic component embedded in optical photo-polymerizable layered material, and component has curved deviation mirror |
| JP2007299985A (en) * | 2006-05-01 | 2007-11-15 | Sumitomo Electric Ind Ltd | Laser diode |
-
1989
- 1989-03-07 JP JP1055329A patent/JPH02234476A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6381386B1 (en) | 1998-04-23 | 2002-04-30 | Nec Corporation | V-shaped optical coupling structure |
| US6487339B2 (en) | 1998-04-23 | 2002-11-26 | Nec Corporation | V-shaped optical coupling structure |
| JP2006013048A (en) * | 2004-06-24 | 2006-01-12 | Mitsubishi Electric Corp | Light emitting optical semiconductor element and light receiving optical semiconductor element |
| GB2421849A (en) * | 2004-11-22 | 2006-07-05 | Agilent Technologies Inc | Optoelectronic Module and Method of Making Such a Module |
| GB2421849B (en) * | 2004-11-22 | 2010-04-14 | Agilent Technologies Inc | Optoelectronic module and method of making such a module |
| JP2007299985A (en) * | 2006-05-01 | 2007-11-15 | Sumitomo Electric Ind Ltd | Laser diode |
| AT503027B1 (en) * | 2006-05-08 | 2007-07-15 | Austria Tech & System Tech | Printed circuit board element for multi-mode or single mode waveguide data transmission, has opto-electronic component embedded in optical photo-polymerizable layered material, and component has curved deviation mirror |
| WO2007128021A1 (en) | 2006-05-08 | 2007-11-15 | At & S Austria Technologie & Systemtechnik Aktiengesellschaft | Printed circuit board element comprising an optoelectronic component and an optical waveguide |
| US8417078B2 (en) | 2006-05-08 | 2013-04-09 | At & S Austria Technologie & Systemtechnik Aktiengesellschaft | Printed circuit board element including an optoelectronic component and an optical waveguide |
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