JPH01140444A - Production of thin film for magneto-optical recording - Google Patents
Production of thin film for magneto-optical recordingInfo
- Publication number
- JPH01140444A JPH01140444A JP29896087A JP29896087A JPH01140444A JP H01140444 A JPH01140444 A JP H01140444A JP 29896087 A JP29896087 A JP 29896087A JP 29896087 A JP29896087 A JP 29896087A JP H01140444 A JPH01140444 A JP H01140444A
- Authority
- JP
- Japan
- Prior art keywords
- film
- cobalt ferrite
- single crystal
- thin film
- magneto
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010408 film Substances 0.000 claims abstract description 37
- 229910000859 α-Fe Inorganic materials 0.000 claims abstract description 35
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 33
- 239000010941 cobalt Substances 0.000 claims abstract description 33
- 239000013078 crystal Substances 0.000 claims abstract description 33
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000004544 sputter deposition Methods 0.000 claims abstract description 15
- 239000012298 atmosphere Substances 0.000 claims abstract description 6
- 239000000843 powder Substances 0.000 claims abstract description 5
- 230000005415 magnetization Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 230000005291 magnetic effect Effects 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 8
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 1
- WAIPAZQMEIHHTJ-UHFFFAOYSA-N [Cr].[Co] Chemical compound [Cr].[Co] WAIPAZQMEIHHTJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001868 cobalt Chemical class 0.000 description 1
- 239000010952 cobalt-chrome Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、大きな光磁気効果を持つ、コバルトフェライ
） （ＣｏＦｅ２０４）垂直磁化膜による光磁気記録用
薄膜の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a thin film for magneto-optical recording using a perpendicularly magnetized cobalt ferrite (CoFe204) film having a large magneto-optical effect.
従来の技術
］バルトフエライトは、入＝ ５ｏｏｏへの波長の光に
対して、ファラデー回転角は厚さ１μあたり約２°、光
吸収係数は１ｏ／ｐｍであって、経時変化も少く光磁気
記録材料として長年注目されていた。この材料を垂直光
磁気記録材料として利用しようとしたとき、その磁気異
方性と膜質が問題となる。[Prior art] Baltic ferrite has a Faraday rotation angle of about 2 degrees per 1 μm of thickness and a light absorption coefficient of 1 o/pm for light with a wavelength of input = 5 ooo, and has little change over time, making it suitable for magneto-optical recording. It has been attracting attention as a material for many years. When attempting to use this material as a perpendicular magneto-optical recording material, problems arise with its magnetic anisotropy and film quality.
コバルトフェライトは、スピネル構造を持ち結晶学的に
は一軸異方性が存在しないが、これまでに、Ｍ膜とその
基板との熱膨張率の差を利用して、薄２￥に引張り応力
を与え、磁歪現象を通して膜面垂直磁気異方性を得てい
た。この最初の試みは、ＣＶＤ法を使用し、ＭｇＯ単結
晶基板を用いて行われた（文献； Ｎ、 Ｎ、 Ｅｖｔ
ｉｈｉｅｖｅｔ ａｌ、 ＩＥＥＥ Ｔｒａｎｓ。Cobalt ferrite has a spinel structure and does not have uniaxial anisotropy crystallographically, but so far, the difference in thermal expansion coefficient between the M film and its substrate has been used to apply tensile stress to a thin film of 2 yen. The magnetic anisotropy perpendicular to the film plane was obtained through the magnetostriction phenomenon. This first attempt was made using a CVD method and with MgO single crystal substrates (ref; N, N, Evt
ihievet al, IEEE Trans.
Ｍａｇ、 ＭＡＧ−１２（１９７６） ７７３）。こ
の方法では、強い一軸異方性を持つコバルトフェライト
の単結晶膜が得られた。Mag, MAG-12 (1976) 773). Using this method, a single crystal film of cobalt ferrite with strong uniaxial anisotropy was obtained.
発明が解決しようとする問題点
しかし、強い一軸異方性を持つコバルトフエライトの単
結晶膜の製造方法として、ＣＶＤ法を用いているために
、本質的に９００″Ｃの異常高温プロセスとなり、製造
の過程が複雑となり、かつコストが高くついていた。こ
の欠点を克服しようとして、コバルトクロムフェライト
薄膜をスパッタ法で作製し、基板としてアルミニウム基
板を使用し、やはり熱膨張率の差を利用して垂直磁気異
方性を得ようとする試みがなされた（文献；日本応用磁
気学会誌ＶＯ１１９，ＮＯ２，１９８５，１３３）。シ
カシ、得られた一軸磁気異方性は比較的小さく、保磁力
ＨＣが低くなり、また多結晶薄膜であったため、多数の
粒界が存在して記録雑音も多くなり、光磁気記録材料と
しては問題点があった。Problems to be Solved by the Invention However, since the CVD method is used as a manufacturing method for a single crystal film of cobalt ferrite that has strong uniaxial anisotropy, it is essentially an abnormally high temperature process of 900"C, which makes the manufacturing process difficult. The process was complicated and the cost was high.In an attempt to overcome this drawback, we fabricated a cobalt chromium ferrite thin film by sputtering, used an aluminum substrate as the substrate, and also utilized the difference in thermal expansion coefficient to vertically An attempt was made to obtain magnetic anisotropy (Reference: Journal of the Japanese Society of Applied Magnetics VO119, NO2, 1985, 133).The obtained uniaxial magnetic anisotropy was relatively small, and the coercive force HC was low. Moreover, since it was a polycrystalline thin film, there were many grain boundaries, which caused a lot of recording noise, which was a problem as a magneto-optical recording material.
本発明は上記問題点を解決しようとするものであり、比
較的簡単な低温プロセスで、−軸異方性を持つコバルト
フェライトの単結晶膜による光磁気記録用薄膜の製造方
法を提供することを目的とするものである。The present invention aims to solve the above-mentioned problems and provides a method for manufacturing a thin film for magneto-optical recording using a single crystal film of cobalt ferrite having -axis anisotropy using a relatively simple low-temperature process. This is the purpose.
問題点を解決するための手段
上記問題点を解決するため本発明は、コバルトフェライ
トの粉末により形成されたターゲットを用い、ＭｇＯ単
結晶基板上にスパッタ法によりコバルトフェライト垂直
磁化膜を成長させるようにしたものである。Means for Solving the Problems In order to solve the above problems, the present invention uses a target made of cobalt ferrite powder to grow a perpendicularly magnetized cobalt ferrite film on an MgO single crystal substrate by sputtering. This is what I did.
作用
上記構成により、薄膜用の基板として結晶（Ａ造が酷似
したＭｇＯ単結晶の基板を用い、ターゲットとして、コ
バルトフェライトの粉末により形成したものを用い、ア
ルゴン酸素雰囲気中でスパッタすることにより、室温に
おいて強い一軸異方性を持つ単結晶簿膜の透明なコバル
トフェライト垂直磁化膜が得られた。この膜は粒界が存
在せず、保磁力が大きく、強いファラデー効果を示し垂
直磁気記録材料としても、光磁気記録材料としても極め
て有望な薄膜となった。Effect With the above configuration, a crystal (MgO single crystal substrate closely resembling Structure A) is used as a thin film substrate, a target made of cobalt ferrite powder is used, and sputtering is performed in an argon oxygen atmosphere at room temperature. A transparent single-crystal cobalt ferrite perpendicularly magnetized film with strong uniaxial anisotropy was obtained in the process.This film has no grain boundaries, has a large coercive force, and exhibits a strong Faraday effect, making it suitable as a perpendicular magnetic recording material. The thin film has also become extremely promising as a magneto-optical recording material.
実施例 以下、本発明の一実施例を図面に基づいて説明する。Example Hereinafter, one embodiment of the present invention will be described based on the drawings.
第１図は本発明で使用する高周波スパッタ装置の概略構
成図である。このスパッタ装置１は放電プラズマ２を安
定化させるためスパッタ方式をマグネトロンタイプとし
ている。第１図において、３はコバルトフェライト（Ｃ
ｏＦ２０４）の粉末を水で固めて、ターゲットホルダー
４の上で乾燥させたターゲットであり、このターゲット
３はターゲット３の位置に存在する強いマグネトロン（
図示せず）の磁場に対して安定している。５は薄膜形成
用のＭｇＯ単結晶基板であり、求めるコバルトフェライ
ト薄膜のスピネル型の結晶構造に対してこの■ＩｇＯ単
結晶基板５のＭｇＯはＮａＣｌ型の結晶格子を持ち、格
子定数が５．９４人であり、エピタキシャル結晶成長の
ための基板として適していると予想される。FIG. 1 is a schematic diagram of a high frequency sputtering apparatus used in the present invention. This sputtering apparatus 1 uses a magnetron type sputtering method in order to stabilize the discharge plasma 2. In Figure 1, 3 is cobalt ferrite (C
oF204) is hardened with water and dried on the target holder 4, and this target 3 is a strong magnetron (
It is stable against magnetic fields (not shown). Reference numeral 5 denotes an MgO single crystal substrate for thin film formation, and in contrast to the spinel type crystal structure of the desired cobalt ferrite thin film, the MgO of this IgO single crystal substrate 5 has a NaCl type crystal lattice and a lattice constant of 5.94. is expected to be suitable as a substrate for epitaxial crystal growth.
また、コバルトフェライトの磁化容易軸は［１００］方
向であるので、使用するＭｇＯ単結晶基板５の基板面を
（１００）面としている。Furthermore, since the axis of easy magnetization of cobalt ferrite is in the [100] direction, the substrate surface of the MgO single crystal substrate 5 used is the (100) plane.
アルゴン酸素雰囲気中で高周波電源６により放電プラズ
マ２を形成し、コバルトフェライトにより形成したター
ゲット３を２０分間スパッタし、これをＭｇＯ単結晶基
板５にたい積し、ＭｇＯ単結晶基板５に膜厚約１０００
人のコバルトフェライト薄膜を得た。ＭｇＯ単結晶基板
５の温度が室温のときはコバルトフェライト薄膜はコバ
ルトフェライトの多結晶相を含む多相膜となり、この基
板５の温度が３００’Ｃ以上となると酸素なしのアルゴ
ン雰囲気だけで単結晶となる。第１図において、７はス
パッタガス導入口、８は排気口である。A discharge plasma 2 is formed by a high frequency power supply 6 in an argon oxygen atmosphere, and a target 3 made of cobalt ferrite is sputtered for 20 minutes, and this is deposited on an MgO single crystal substrate 5 to a film thickness of about 1000.
A human cobalt ferrite thin film was obtained. When the temperature of the MgO single crystal substrate 5 is room temperature, the cobalt ferrite thin film becomes a multiphase film containing a polycrystalline phase of cobalt ferrite, and when the temperature of this substrate 5 exceeds 300'C, it becomes a single crystal film only in an argon atmosphere without oxygen. becomes. In FIG. 1, 7 is a sputtering gas inlet, and 8 is an exhaust port.
次に第２図に単結晶のコバルトフェライト薄膜のＸ線回
折図を示す。（４００）ピーク９を除いて他の回折ピー
クは見られない。たｔごし、この薄膜では、コバルトフ
ェライトの（４００）ピークと１雌Ｏの（２００）ピー
クが、はぼ重なっているので、区別はできない。この試
料では膜面垂直方向が磁化容易軸の［１００］軸となり
、かつ大きな負の磁歪を示す。Next, FIG. 2 shows an X-ray diffraction diagram of a single crystal cobalt ferrite thin film. Except for (400) peak 9, no other diffraction peaks are observed. However, in this thin film, the (400) peak of cobalt ferrite and the (200) peak of 1 female O overlap so much that they cannot be distinguished. In this sample, the direction perpendicular to the film surface is the [100] axis of easy magnetization, and exhibits large negative magnetostriction.
コバルトフェライトは、ＭｇＯ単結晶基板５に成膜する
と、室温では引張り応力膜となり、負の磁歪定数を通し
て膜面垂直方向に強い磁気異方性が誘起される。When cobalt ferrite is formed into a film on the MgO single crystal substrate 5, it becomes a tensile stress film at room temperature, and strong magnetic anisotropy is induced in the direction perpendicular to the film surface through a negative magnetostriction constant.
第３図に、ＭｇＯ単結晶基板５の温度４７５℃，アルゴ
ン分圧５Ｘ１０−’ ｔｏｒｒ 、および放ｘｍ力１５
０Ｗのスパッタ条件で成膜したコバルトフェライト膜の
ヒステリシス曲線を示す。第３図において、１０は膜面
平行磁化曲線、１１は膜面垂直磁化曲線であり、コバル
トフェライト膜は典型的な垂直磁化膜となっている。こ
の薄膜は、
飽和磁化力 Ｍｓ 萱２００ ｅｍｕ／ｃｃ保磁力Ｈｃ
＝ ４ＫＯｅ
残留磁化力 Ｍｒ ＝ １０ｏ ｅｍｕ／ｃｃであり、
可視光に対してはうすい茶色でほぼ透明である。In FIG. 3, the temperature of the MgO single crystal substrate 5 is 475°C, the argon partial pressure is 5X10-' torr, and the radiation force is 15.
A hysteresis curve of a cobalt ferrite film formed under 0W sputtering conditions is shown. In FIG. 3, 10 is a magnetization curve parallel to the film surface, and 11 is a magnetization curve perpendicular to the film surface, and the cobalt ferrite film is a typical perpendicular magnetization film. This thin film has a saturation magnetization force Ms 萱200 emu/cc coercive force Hc
= 4KOe residual magnetizing force Mr = 10o emu/cc,
It is pale brown and almost transparent to visible light.
単結晶のコバルトフェライト膜の磁性は、基板温度、放
［雰囲気中の酸素濃度、放電のパワー、スパッタ後の空
気中アニールなどの諸条件によって大きく変化する。そ
れぞれの条件を変化させて最適値を探った結果、ＩＶＩ
ｇＯ単結晶基板５の温度５００”Ｃ以上のたとえばＳＯ
Ｏ℃１スパッタガス雰囲気５Ｘ１０’ｔｏｒｒにてアル
ゴンガスに対する酸素濃度１０％以上５０％以下のたと
えば３０％、放電電力２００Ｗのとき、最も強い垂直磁
気異方性を示し、かつ優れたヒステリシスの角型特性を
示した。なお、この他の条件で作製した場合も、同様の
効果が認められ、応用デバイスとして使用できる。The magnetism of a single-crystal cobalt ferrite film varies greatly depending on various conditions such as substrate temperature, oxygen concentration in the discharge atmosphere, discharge power, and air annealing after sputtering. As a result of searching for the optimal value by changing each condition, IVI
For example, when the temperature of the gO single crystal substrate 5 is 500"C or more, SO
A square shape with the strongest perpendicular magnetic anisotropy and excellent hysteresis when the oxygen concentration with respect to argon gas is 10% to 50%, for example 30%, and the discharge power is 200 W in a sputtering gas atmosphere of 5 x 10' torr at O ℃ 1. The characteristics were shown. Note that even when fabricated under other conditions, similar effects are observed and it can be used as an applied device.
また、このコバルトフェライト薄膜は、磁化特性のみな
らず、大きな光磁気効果を有しており、特に、この透明
磁性体を、直線偏光している光が通過するとき、大きな
ファラデー回転角を示す。In addition, this cobalt ferrite thin film has not only magnetization properties but also a large magneto-optical effect, and particularly exhibits a large Faraday rotation angle when linearly polarized light passes through this transparent magnetic material.
−例として、半導体レーザの７８０ｎｍ波長の光に対し
て、？−４γμｍのファラデー回転が得られた。なお、
このときの外部磁界は２０ ＫＯｅであり、外部磁化が
零のときでも、残留磁化により飽和値の約５０％のファ
ラデー回転角が得られた。-For example, what about 780 nm wavelength light from a semiconductor laser? A Faraday rotation of −4γμm was obtained. In addition,
The external magnetic field at this time was 20 KOe, and even when the external magnetization was zero, a Faraday rotation angle of about 50% of the saturation value was obtained due to residual magnetization.
このように、室温において一軸異方性を有し、粒界が存
在せず、保磁力が大きく、経時変化が少なく、強いファ
ラデー効果を有するコバルトフェライト垂直磁化膜を得
ることができる。In this way, it is possible to obtain a perpendicularly magnetized cobalt ferrite film that has uniaxial anisotropy at room temperature, has no grain boundaries, has a large coercive force, has little change over time, and has a strong Faraday effect.
発明の効果
以上のように本発明によれば、比較的簡単な低温プロセ
スにてＭｇＯ単結晶基板上にコバルトフェライト垂直磁
化膜を形成することができる。この膜は・、室温におい
て強い一軸異方性を持ち、粒界が存在せず、保磁力が大
きく、経時変化が少なく、強いファラデー効果を示し、
垂直磁気記録膜、光磁気記録膜としての工業的価値は大
きい。Effects of the Invention As described above, according to the present invention, a perpendicularly magnetized cobalt ferrite film can be formed on an MgO single crystal substrate using a relatively simple low-temperature process. This film has strong uniaxial anisotropy at room temperature, no grain boundaries, large coercive force, little change over time, and strong Faraday effect.
It has great industrial value as a perpendicular magnetic recording film and a magneto-optical recording film.
第１図は本発明の一実施例の光磁気記録用薄膜の製造方
法に使用するスパッタ装置の概略構成図、第２図は同製
造方法により作製された単結晶のコバルトフェライト膜
のＸ線回折図、第３図は同製造方法により作製された単
結晶のコバルトフェライト膜の磁化曲線図である。
１・・・スパッタ装置、２・・・放？［プラズマ、３・
・・ターゲット、５・・・ＭｇＯ単結晶基板。FIG. 1 is a schematic diagram of a sputtering apparatus used in a method for producing a magneto-optical recording thin film according to an embodiment of the present invention, and FIG. 2 is an X-ray diffraction diagram of a single-crystal cobalt ferrite film produced by the same method. 3 are magnetization curve diagrams of a single-crystal cobalt ferrite film produced by the same manufacturing method. 1... Sputtering equipment, 2... Radiation? [Plasma, 3.
...Target, 5...MgO single crystal substrate.
Claims (3)
ットを用い、ＭｇＯ単結晶基板上にスパッタ法によりコ
バルトフェライト垂直磁化膜を成長させる光磁気記録用
薄膜の製造方法。1. A method for manufacturing a thin film for magneto-optical recording, in which a cobalt ferrite perpendicular magnetization film is grown by a sputtering method on an MgO single crystal substrate using a target formed from cobalt ferrite powder.
の範囲第１項記載の光磁気記録用薄膜の製造方法。2. 2. The method for producing a magneto-optical recording thin film according to claim 1, wherein the MgO single crystal substrate surface is a (100) plane.
ッタ用ガス雰囲気として、アルゴンに対する酸素の濃度
を１０％以上５０％以下とする特許請求の範囲第１項記
載の光磁気記録用薄膜の製造方法。3. The method for manufacturing a thin film for magneto-optical recording according to claim 1, wherein the temperature of the MgO single crystal substrate is 500° C. or higher, and the sputtering gas atmosphere has a concentration of oxygen relative to argon of 10% to 50%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62298960A JP2636860B2 (en) | 1987-11-26 | 1987-11-26 | Method for manufacturing thin film for magneto-optical recording |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62298960A JP2636860B2 (en) | 1987-11-26 | 1987-11-26 | Method for manufacturing thin film for magneto-optical recording |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01140444A true JPH01140444A (en) | 1989-06-01 |
| JP2636860B2 JP2636860B2 (en) | 1997-07-30 |
Family
ID=17866410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62298960A Expired - Lifetime JP2636860B2 (en) | 1987-11-26 | 1987-11-26 | Method for manufacturing thin film for magneto-optical recording |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2636860B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6019678A (en) * | 1997-03-06 | 2000-02-01 | Matsushita Seiko Company, Ltd. | Ventilation fan for duct and method of installation thereof |
| CN113235159A (en) * | 2021-04-07 | 2021-08-10 | 兰州大学 | Method for preparing single crystal nickel ferrite film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60150248A (en) * | 1984-01-13 | 1985-08-07 | Ricoh Co Ltd | Photomagnetic recording medium |
-
1987
- 1987-11-26 JP JP62298960A patent/JP2636860B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60150248A (en) * | 1984-01-13 | 1985-08-07 | Ricoh Co Ltd | Photomagnetic recording medium |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6019678A (en) * | 1997-03-06 | 2000-02-01 | Matsushita Seiko Company, Ltd. | Ventilation fan for duct and method of installation thereof |
| CN113235159A (en) * | 2021-04-07 | 2021-08-10 | 兰州大学 | Method for preparing single crystal nickel ferrite film |
| CN113235159B (en) * | 2021-04-07 | 2022-07-01 | 兰州大学 | Method for preparing single crystal nickel ferrite film |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2636860B2 (en) | 1997-07-30 |
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