JPH01139761A - Sputtering target - Google Patents
Sputtering targetInfo
- Publication number
- JPH01139761A JPH01139761A JP29810187A JP29810187A JPH01139761A JP H01139761 A JPH01139761 A JP H01139761A JP 29810187 A JP29810187 A JP 29810187A JP 29810187 A JP29810187 A JP 29810187A JP H01139761 A JPH01139761 A JP H01139761A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- target
- metal
- sputtering target
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 12
- 238000004544 sputter deposition Methods 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 150000004767 nitrides Chemical class 0.000 claims abstract description 8
- 150000003839 salts Chemical class 0.000 claims abstract description 6
- 229910001337 iron nitride Inorganic materials 0.000 claims description 11
- 238000005121 nitriding Methods 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims 2
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 10
- 229910000727 Fe4N Inorganic materials 0.000 abstract description 5
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910020630 Co Ni Inorganic materials 0.000 description 2
- 229910002440 Co–Ni Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- ZGDWHDKHJKZZIQ-UHFFFAOYSA-N cobalt nickel Chemical compound [Co].[Ni].[Ni].[Ni] ZGDWHDKHJKZZIQ-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- IGOJDKCIHXGPTI-UHFFFAOYSA-N [P].[Co].[Ni] Chemical compound [P].[Co].[Ni] IGOJDKCIHXGPTI-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000013040 bath agent Substances 0.000 description 1
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- -1 iron nitride (Fe4N) Chemical class 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 1
- 210000004303 peritoneum Anatomy 0.000 description 1
- SIBIBHIFKSKVRR-UHFFFAOYSA-N phosphanylidynecobalt Chemical compound [Co]#P SIBIBHIFKSKVRR-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- MNWBNISUBARLIT-UHFFFAOYSA-N sodium cyanide Chemical compound [Na+].N#[C-] MNWBNISUBARLIT-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はスパッタリングにより被着体に付着される物
質からなるスパッタリング用のターゲット、特に製法を
改善したものに関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a sputtering target made of a substance that is deposited on an adherend by sputtering, and particularly to one with an improved manufacturing method.
〔従来の技術］
スパッタリングは、例えば、磁気記録体の磁性層や呆獲
層などの成膜に従来から用いられている。[Prior Art] Sputtering has been conventionally used, for example, to form films such as magnetic layers and absorption layers of magnetic recording bodies.
例えば、磁気ディスクにおいて、ディスク状のアルミ合
金板上に、アルマイト加工又は非晶質メツキ処理等の硬
化地理を施した後、ｒ−Ｆ’ｅｚＯｓ（ガンマ型酸化第
２鉄）を主成分とし、Ｃｏ（コバルト）その池を添加し
た酸化物磁性体、又はＧｏ−Ｎｉ（コバルト・ニツ°ケ
Ａ／ ） 、 Ｃｏ −Ｐ （コバルト−リン）、Ｃ
ｏ−Ｎ１−Ｐ（コバルト−ニッケルーリン）等の合金磁
性体を塗付するか、あるいはメツキやスパッタリング等
によって磁性層が形成される。とくに、記録密度の向上
には合金磁性膜か有力とされている。For example, in a magnetic disk, after applying a hardening process such as alumite processing or amorphous plating on a disk-shaped aluminum alloy plate, r-F'ezOs (gamma type ferric oxide) is the main component, Oxide magnetic material with Co (cobalt) added, or Go-Ni (cobalt-Nitsuke A/), Co-P (cobalt-phosphorus), C
A magnetic layer is formed by applying an alloy magnetic material such as o-N1-P (cobalt-nickel-phosphorus), or by plating, sputtering, or the like. In particular, alloy magnetic films are considered to be effective in improving recording density.
しかし、合金磁性膜は耐食性が低く、又非晶質以外によ
って形成されたものは耐摩耗性も低いので、磁性層の表
面に床獲層を設けている。However, alloy magnetic films have low corrosion resistance, and those formed of materials other than amorphous have low wear resistance, so a bed layer is provided on the surface of the magnetic layer.
この釆獲層の形成は、例えば、特公昭５５−２９５■号
公報に示されるように、Ｃｒ（クロム）電気メツキや、
０．１μｍ程度のＲｈ（ａジウム）電気メツキ層、Ｏ，
ＯＳμｍ 程度のアルミナ・スパッタ層、０．５μ口程
度の８１０（酸化けい素）コーティング等の方法が試み
られている。さら１で、呆獲層として窒化物、とくに窒
化鉄（Ｆｅ４Ｎ）を主成分とし、これをスパックリング
により磁性膜上に形成するものもある。The formation of this layer can be achieved by, for example, Cr (chromium) electroplating, as shown in Japanese Patent Publication No. 55-295-2,
Rh (adium) electroplated layer of about 0.1 μm, O,
Attempts have been made to use an alumina sputter layer with a thickness of approximately 0.5 μm or an 810 (silicon oxide) coating with a thickness of approximately 0.5 μm. In addition, there is also a method in which the absorbing layer is mainly composed of nitride, particularly iron nitride (Fe4N), and is formed on the magnetic film by sputtering.
このような窒化鉄（Ｆｅ４Ｎ）をスパッタリングする場
合にはターゲットとして窒化鉄（Ｆｅ４Ｎの粉末を焼結
したものが一般に使用されていた。When sputtering such iron nitride (Fe4N), a target made by sintering iron nitride (Fe4N) powder has generally been used.
〔発明が解決しようとする問題点Ｊ
従来のスパッタリング用のターゲットは以上のように形
成されているので、ターゲット全体が被着体にスパック
リングする物質金属で形成されていた。しかし、スパッ
クリングではターゲット全体が使用されず、一部残材が
伐るため、ターゲットの歩留りが悪く、ターゲットが高
圃なも■になるという問題点があった、
この発明は上記のような問題点を解消するためになされ
たもので、ターゲットの有効利用が計れ、安価なスパッ
タリング用のターゲットを得ることを目的とする。[Problem to be Solved by the Invention J] Since the conventional sputtering target is formed as described above, the entire target is formed of a material metal that sputters on the adherend. However, in spackling, the entire target is not used and only a portion of the remaining wood is cut, resulting in poor target yield and resulting in high-field targets.This invention solves the above-mentioned problems. This was done to solve the problem, and the purpose is to make effective use of the target and to obtain an inexpensive sputtering target.
〔問題点を解決するための手段ｊ
この発明に係るスパッタリング用のターゲットは、スパ
ッタリングされる物質の主成分材料の金属表面層を、窒
化によりスパッタリングされる物質に改質したものであ
る。[Means for Solving the Problems j] The sputtering target according to the present invention is obtained by modifying the metal surface layer of the main component material of the substance to be sputtered into a substance to be sputtered by nitriding.
この発明におけるスパッタリング用のターゲットは、タ
ーゲットの表面層と化合によりスパッタリングに必要な
材質に改質し、内部を安ｒｓな生成分材料とし、残材と
なる部分を安価な材料とした。The target for sputtering in this invention is modified to a material necessary for sputtering by combining with the surface layer of the target, the inside is made of a cheap product material, and the remaining part is made of an inexpensive material.
［実施例］
以下、この発Ｈｏ−実施例を説明する。ターゲットとし
て、高純度鉄（Ｅ’ｅ）から成る円板（直径Ｂｏｗ、厚
さ２鱈）を塩浴による軟窒化法により表面に窒化鉄層を
形成した。即ち、チタンフイニングした軟鋼製ポットに
青酸ソーダを装填し、５７０℃に加熱し、空気吹込装置
で空気を吹き込み、安定した窒化層が構成される条件（
２ＮａＣＮ＋０Ｈ２ＮａＣＮＯＫより、適切なＮａＣＮ
：ＮａＣＮ０比とする）で軟窒化を行う。公知の軟窒
化法に基く他、塩浴剤は高純度試薬を用いた。このよう
な条件のもとに４時間の窒化を行った。これによって、
内部の拡牧層を除き、表面数十μｍの窒化鉄層（ｒｅ４
Ｎ）を形成した。[Example] Hereinafter, this Ho-Example will be described. As a target, an iron nitride layer was formed on the surface of a disk (diameter Bow, thickness 2 mm) made of high-purity iron (E'e) by soft nitriding using a salt bath. That is, a titanium-fined mild steel pot was charged with sodium cyanide, heated to 570°C, and air was blown with an air blower to form a stable nitrided layer (
Appropriate NaCN from 2NaCN+0H2NaCNOK
:NaCN0 ratio). In addition to using a known soft nitriding method, a high purity reagent was used as the salt bath agent. Nitriding was performed for 4 hours under these conditions. by this,
Excluding the internal expansion layer, the surface has an iron nitride layer (re4) with a thickness of several tens of μm.
N) was formed.
そして、従来と同様な方法で、直径８０ｍのアルミ合金
のサブストレート上に、まず、厚さ５００ズのコバルト
・ニッケＡ／（Ｃｏ−Ｎｉ）スパッタ膜を形成し、その
上に上記の方法で作成したターゲットを用いて窒化鉄を
主成分とする床腹膜をスパッタリングで形成した。スパ
ッタ条件は、５ＸｌＯ”ＴＯｒｒのアルゴン雰囲気、３
０Ａ／ｍｉｎのの成膜速度とした。Then, using the same conventional method, first, a 500 mm thick cobalt-nickel A/(Co-Ni) sputtered film was formed on an aluminum alloy substrate with a diameter of 80 m, and then the above method was used to form a cobalt-nickel A/(Co-Ni) sputtered film. Using the prepared target, a bed peritoneum mainly composed of iron nitride was formed by sputtering. The sputtering conditions were an argon atmosphere of 5XlO” TOrr, 3
The film formation rate was set at 0 A/min.
このようにして作成した磁気ディスクを、磁気ディスク
試験装置でフエフイト製ヘッドを用いて１万回のディス
ク回転始動停止試験（Ｃ８Ｓ試験）を実施した。なお、
ヘッドは試験ディスクごとに新品と交換し、接触摩擦状
態がヘッド及びディスクに与える影響を観察した。The thus produced magnetic disk was subjected to a disk rotation start/stop test (C8S test) of 10,000 times using a magnetic disk testing device using a head made by Fehuit. In addition,
The head was replaced with a new one for each test disk, and the effect of contact friction on the head and disk was observed.
この試験の結果、ヘッドが磁気ディスクに食い込んで、
記録再生が出来なくなるようなことはンよく、この試験
をクリアした。As a result of this test, the head bit into the magnetic disk.
I passed this test without any issues that would cause me to be unable to record or play back.
その他の性能においてもこの発明のターゲットを使い作
成された磁気テ°イスクが、従来の焼結窒化鉄ターゲッ
トにより作成した磁気ディスクに比して劣る点はなかっ
た。In terms of other performances, magnetic disks made using the target of the present invention were not inferior to magnetic disks made using conventional sintered iron nitride targets.
なお、ここでは塩浴による軟窒化法を用いた例について
示したが、ガスによる軟窒化法も公用されておりアンモ
ニア等のガスの純度等に配慮すれば、塩浴による場合よ
り良質の窒化鉄層が形成できるというメリットがある。Although an example using a soft nitriding method using a salt bath is shown here, a soft nitriding method using a gas is also commonly used, and if consideration is given to the purity of gases such as ammonia, better quality iron nitride can be obtained than when using a salt bath. It has the advantage that layers can be formed.
さらに、イオン窒化法を用いれば、５００℃以上に鉄製
サブストレートが昇温されることがないため、サブスト
レートの繰返し使用、即ち、薄い窒化層がスパッタによ
りなくなってしまった時、再窒化して使用する際の歪等
が少なくてすむ等のメリットもある。Furthermore, if the ion nitriding method is used, the iron substrate will not be heated above 500°C, so if the substrate is used repeatedly, that is, when the thin nitrided layer is lost due to sputtering, it can be re-nitrided. There are also advantages such as less distortion during use.
また、ターゲットの主成分材料となる金属を高純度鉄で
示したが、これ以外にＡｌ、０２などの金属を用いて表
面を窒化して窒化層を形成したものであってもよい。Further, although high-purity iron is used as the metal that is the main component of the target, other metals such as Al and 02 may be used to nitride the surface to form a nitrided layer.
また、上記一実施例においては磁気ディスクの床ａＭの
形ｉｔ−例として示したが、これ以外のスパッタリング
に使用できることはｇうまでもない。Further, in the above embodiment, the floor aM of the magnetic disk was shown as an example, but it goes without saying that it can be used for sputtering other than this.
〔発明の効果Ｊ
以上のように、この発明によれば、スパッタリング用の
ターゲットをスパッタリングされる物質の主成分材料と
し、その表面を窒化して窒化層を形成することにより、
ターゲットのスパッタリングされる物質の無駄をはぶき
、有効利用が計れると共に、ターゲットを安１ｉ［［ｉ
Ｋできる効果がある。[Effect of the Invention J As described above, according to the present invention, by using the sputtering target as the main component material of the substance to be sputtered and nitriding the surface to form a nitride layer,
It is possible to eliminate the waste of material sputtered on the target, make effective use of it, and make the target safer.
It has the effect of making K.
Claims (5)
パッタリング用のターゲットにおいて、上記金属表面に
窒化によつて窒化層を形成したことを特徴とするスパッ
タリング用のターゲット。(1) A sputtering target made of a metal that is dissociated by sputtering, characterized in that a nitride layer is formed on the surface of the metal by nitriding.
第１項記載のスパッタリング用のターゲット。(2) The sputtering target according to claim 1, wherein the metal is iron.
ことにより形成された窒化鉄であることを特徴とするこ
とを特徴とする特許請求の範囲第２項記載のスパッタリ
ング用のターゲット。(3) The sputtering target according to claim 2, wherein the nitride layer is iron nitride formed by heating in a gas containing ammonia.
電を応用して形成された窒化鉄であることを特徴とする
特許請求の範囲第２項記載のスパッタリング用のターゲ
ット。(4) The sputtering target according to claim 2, wherein the nitride layer is iron nitride formed by applying glow discharge in a gas containing ammonia.
熱することにより形成される窒化鉄であることを特徴と
する特許請求の範囲第２項記載のスパツタリング用のタ
ーゲット。(5) The sputtering target according to claim 2, wherein the nitride layer is iron nitride formed by heating in a salt bath containing cyanide as a main component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29810187A JPH01139761A (en) | 1987-11-25 | 1987-11-25 | Sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29810187A JPH01139761A (en) | 1987-11-25 | 1987-11-25 | Sputtering target |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01139761A true JPH01139761A (en) | 1989-06-01 |
Family
ID=17855169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29810187A Pending JPH01139761A (en) | 1987-11-25 | 1987-11-25 | Sputtering target |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01139761A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8955178B2 (en) | 2009-10-23 | 2015-02-17 | Integrated Furniture Technologies Limited | Adjustable furniture |
-
1987
- 1987-11-25 JP JP29810187A patent/JPH01139761A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8955178B2 (en) | 2009-10-23 | 2015-02-17 | Integrated Furniture Technologies Limited | Adjustable furniture |
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